• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 춘계학술대회 논문집
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• pp.25-26
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• 2009

We design and demonstrate the controlled morphologies of Ag-dpped ZnO nanowires (NWs) adopting self-contrived hot-walled pulsed laser deposition (HW-PLD). p-type Ag-doping is ensuired by low temperature photoluminescence (PL) spectrum to find the AoX peak at 3.349 eV. Morphology of grown NWs are controlled by changing the kinetic energy and flux of the ablated particles with adjusting the target - substrate (T-S) distance. The analysis on the resultant NWs is presented.

• 한국전기전자재료학회논문지
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• 제25권4호
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• pp.294-297
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• 2012

In this work, local oxidation behavior in phosphorous ion-implanted 4H-SiC has been investigated by using atomic force microscopy (AFM). The AFM-local oxidation (AFM-LO) has been performed on the implanted samples, with and without activation anneal, using an applied bias (~25 V). It has been clearly shown that the post-implantation annealing process at $1,650^{\circ}C$ has a great impact on the local oxidation rate by electrically activating the dopants and by modulating the surface roughness. In addition, the composition of resulting oxides changes depending on the doping level of SiC surfaces.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.1
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• pp.357-360
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• 2003

In this paper, we designed 4.5kV/1.5kA IGCT devices. GCT thyristor has many superior characteristics compared with GTO thyristor, for examples; snubberless turn-off capability, short storage time, high turn-on capability, small turn-off gate charge and low total power loss of the application system containing device and peripheral parts such as anode reactor and snubber capacitance. In this paper we designed GCT thyristor devices, and analyzed static and dynamic characteristics of GCT thyristor depending on the minority carrier lifetime, n-base thickness and doping concentration of n-base region, respectively. Especially, turn-on and turn-off characteristics are very important characteristics for GCT thyristor devices. So, we considered above characteristic for design and analysis of GCT devices.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 추계학술대회 논문집 Vol.14 No.1
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• pp.529-532
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• 2001

We synthesized polypyrrole (PPy) by electrolysis of the pyrrole monomer solution containing support electrolyte KCl and/or p-toluene sulfonic acid sodium salt (p-TS). The electrochemical behavior was investigated using cyclic voltammetry and AC impedance. In the case of using electrolyte p-TS, the redox potential was about -0.3 V vs. Ag/ AgCl reference electrode, while the potential was about 0 V for using electrolyte KCl. It is considered as the backbone forms a queue effectively by doping p-TS Therefore, it is possible to be arranged regularly. That leads to improvement in the electron hopping. The AC impedance plot gave a hint of betterment of mass transport. PPy doped with p-TS has improved in mass transport, or diffusion. That is because the PPy doped with p-TS has a good orientation, and is more porous than PPy with KCl.

• 한국전기전자재료학회논문지
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• 제14권3호
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• pp.215-222
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• 2001

Polyaniline-Camphorsulfonic Acid Emeraldine Salt(PANI-CSA ES) was prepared by doping Polyaniline Ermeralidine Base(PANI EB) with DL-10-Camphorsulfonic Acid(CSA). PANI-CSA ES was solved in an organic solvent by ultrasonification for different periods of time and its surface resistivity was measured. Several PANI-CSA ES solutions solved in different organic solvents were prepared and their surface resistivities were measured. Thermal stability of film casted with PANI-CAS ES solution in m-cresol was estimated by measuring its surface conductivity and the content of this moisture and organic solvents. PANI-CSA ES was blended with different polymeric binders to improve its physical properties and the surface resistivities of several kinds of PANI-CSA ES blends were measured as a function of the content of PANI-CSA ES. PANI-CSA ES polymerized by 1-step oxidative polymerization was prepared and its surface resistivity was measured.

• 한국전기전자재료학회논문지
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• 제14권3호
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• pp.257-262
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• 2001

Single crystalline films of La doped YIG(yttrium iron garnet) were grown by the liquid phase epitaxy. The lattice constants of films obtained by DCD(double crystalline diffractometer) measurement increased with increasing La contents in films. In particular, lattice constants of films grown wiht Y/La=20 solution were nearly same as those of GGG (gadolinium gallium garnet) substrate. The saturation magnetization measured with VSM (vibrating sample magnetometer) was about 1750Gauss which is the same as that of pure YIG irrespective of La contents in films. FMR(ferromagnetic resonance) linewidth of La doped YIG was smaller than that of pure YIG. Since appropriate La doping decreases the lattice mismatch between film and substrate, the FMR linewidth was Y/La=20 in this experiment.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1994년도 추계학술대회 논문집
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• pp.187-189
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• 1994

The degree of the photodoping process in Ag(100 )/a-$Se_{75}Ge_{25}$(2000 ) films has been measured as a funcition of photon energy between 1.5eV and 2.9eV with the exposing time. The window of Ag occurs at 3400 (3.65eV) and Ag is almost transparent in this region. It was shown that transmitance is always constant (40∼50%) for the wavelength ranges of our experiment. It was found that the energy gap of a unexposed a-$Se_{75}Ge_{25}$ film is 1.81eV. Ag photodoping process result in the photodarkenting effect which the absorption edge shift to the large wavelength. Especially, we could obtain very large band shut ( ∼0.3eV) resulting in exposing He-Ne laser(6328[ ]). From the result of our experimental, we suggest that Ag photodoping process depends on the photon absorption in Ag.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1996년도 추계학술대회 논문집
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• pp.195-198
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• 1996

In conducting systems based on LB films, TCNQ derivatives have been extensively studied as electron acceptor molecules. We have investigated the optical, electrical, and magnetic properties of Viologen-(TCNQ￣)$_2$LB films. In UV/visible absorption measurements, we have observed TCNQ￣ peak at 380 nm and dimer peak at 620 nm. The electron spin resonance measurements infer that Viologen-(TCNQ￣)$_2$LB film exhibits anisotropic properly. In other words, the LB film shows angular dependence. Iodine doping affects the degree of charge transfer and the conductivity of the films. The UV/visible absorption spectra of the LB film doped with I$_2$show peaks at near 400~430 nm and there is no dimer absorption peak. The in-plane electrical conductivity of the undoped film is approximately 4.2$\times$10$^{-6}$ S/cm.

• 한국전기전자재료학회논문지
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• 제15권2호
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• pp.178-183
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• 2002

The effects of Dy$_2$O$_3$and Er$_2$O$_3$addition on the electromagnetic properties of Mn-Zn ferrite were investigated in the doping concentration range from 0.05 wt% to 0.25 wt%. All samples were prepared by standard fabrication of ferrite ceramics. The XRD patterns of sample were observed spinel and secondary phase. The densities of sample were showed nearly constant values. As the increased additive, electrical resistivity, initial permeability and real component of the series complex permeability increased with setting limits each other. Excess doped with Dy$_2$O$_3$ and Er$_2$O$_3$, those values decreased. The maximum electrical resistivity was observed with 0.15 we% and initial permeability was observed with 0.05 wt%. Magnetic loss decreased with additive and then increased in proportion to increased.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 추계학술대회 논문집 Vol.15
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• pp.155-158
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• 2002

Eu-doped lead zirconium titanate $Pb_{1.1}(Zr_{0.3}Ti_{0.7})O_{3}$ thin films on the Pt/Ti/$SiO_2$/Si substrates prepared by a metalorganic decomposition (MOD) method. The effect on the structural and electrical properties of the films measured according to Eu content. Eu-doping altered significantly the dielectric and ferroelectric properties. The remanent polarization and coercive field decreased with increasing the concentration of Eu content. The dielectric constant and dielectric loss of the film decreased with increasing Eu contents. The 3 mol% of Eu-doped PZT thin film showed large remanent polarization and the fatigue characteristic of the film did not change up to $10^9$ switching cycles.