• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.1
• /
• pp.267-269
• /
• 2003

반도체 웨이퍼 및 각종 박막의 면/비저항(sheet/resistivity resistance)의 측정에 비교적 간단히 측정할 수 있고 측정정확도가 높은 4탐침(four-point probe)방법이 널리 사용되고 있다 또한 4탐침 측정방법은 높은 분해능의 contour map작성과 ion implantation의 doping accuracy 및 doping uniformity의 측정에도 사용된다. 최근 재료의 소형, 박막화 경향으로 볼 때 정확한 비저항 측정의 필요성이 요구되고 있으며 이에 따라 4탐침 측정기술인 single 및 dual configuration method로 실리콘 웨이퍼에 대한 비저항의 측정 정확도를 고찰한 결과 dual configuration 측정방법이 single configuration측정 방법에 비하여 정밀 정확도가 더 좋은 것으로 고찰되었다.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 1994년도 추계학술대회 논문집
• /
• pp.17-20
• /
• 1994

Electrical Chracteristics of ZnO doped with Al$_2$O$_3$were investigated using complexe impedence measurements. The electrical conductivity of ZnO samples increased whithin 0.5mol% of Al$_2$O$_3$ doping, but decreased abode 0.5mol%. The increase and decrease of electrical conductivity seem to be the effect of Al$_2$O$_3$ doner doping and increasement of the number of grain boundary ZnO, respectively.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 1994년도 추계학술대회 논문집
• /
• pp.97-100
• /
• 1994

The present paper is devoted to the physical and electrical characteristics of N-docosyl- quinolinium-TCNQ films compared with the films doped with I$_2$. Iodine affects the degree of charge transfer and the conductivity of the films. The UV-visible absorption spectra of the film doped with I$_2$ shows that the peak of I$_3$ which had electronic transition at 300∼350nm and (TCNQ-)$_2$ dimer absorption disappered. The in-plane electrical conductivity of the films doped with I$_2$ were 1.4${\times}$10$\sub$-6/S/cm, which is two orders of magnitude higher conductivity than undoped LB films. The film structural difference between Y and Z-type may cause the conductivity. Another possible reasons of the structural difference was the overlapping TCNQ anion radical in LB films.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
• /
• pp.354-355
• /
• 2008

The sensitivity and sensing margin of SOI(silicon on insulator) nano-wire BioFET(field effect transistor) were investigated by using back-gate bias. The channel conductance modulation was affected by doping concentration, channel length and channel width. In order to obtain high sensitivity and large sensing margin, low doping concentration, long channel and narrow width are required. We confirmed that the electrical sensing by back-gate bias is effective method for evaluation and optimization of bio-sensor.

• 한국전기전자재료학회논문지
• /
• 제28권4호
• /
• pp.222-228
• /
• 2015

Power MOSFETs (metal oxide semiconductor field effect transistor) operate as energy control semiconductor switches. In order to reduce energy loss of the device, it is essential to increase its conductance. However, a trade-off relationship between the breakdown voltage and conductance of the device have been the critical difficulty to improve. In this paper, theoretical analysis of electrical benefits on single floating island power MOSFET is proposed. By the method, the optimization point has set defining the doping limit under single floating island structure. The numerical multiple 2.22 was obtained which indicates the doping limit of the original device, improving its ON state voltage drop by 45%.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 1999년도 추계학술대회 논문집
• /
• pp.457-460
• /
• 1999

The effects of electrical positive stress on n-channel LDD and offset structured poly-Si TFT\`s have been systematically investigated in order to analyze the transfer curve\`s shift mechanism. It has been found that the LDD and offset regions behave as a series resistance that reduce the electric field near drain. Hot carrier effects are reduced because of these results. After electrical stress transfer curve’s shift and variation of the off-current are dependent upon the offset length rather than offset region’s doping concentration. Variation of the subthreshold slope is dependent upon offset region’s doping concentration as well as offset length.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2004년도 하계학술대회 논문집 Vol.5 No.1
• /
• pp.317-319
• /
• 2004

이 논문에서는 태양전지 공정 중에서 중요시되는 에미터 형성에 대한 방법 중 하나인 SOD기술을 도입하였다. SOD(Spin-On Doping)은 저가형 고효율 태양전지를 개발하기 위하여 연구되고 있는 방법 중의 하나이다. 태양전지 제작을 위해 사용한 기판은 P형 다결정 Si 페이퍼를 사용하였고, SOD 기술을 적용하여 온도와 시간에 따른 도핑특성의 변화를 실험적으로 연구하였다.

• Journal of Electrochemical Science and Technology
• /
• 제8권4호
• /
• pp.338-343
• /
• 2017

Activated carbon has lower electrical conductivity and reliability than other carbonaceous materials because of the oxygen functional groups that form during the activation process. This problem can be overcome by doping the material with heteroatoms to reduce the number of oxygen functional groups. In the present study, N, F co-doped activated carbon (AC-NF) was successfully prepared by a microwave-assisted hydrothermal method, utilizing commercial activated carbon (AC-R) as the precursor and ammonium tetrafluoroborate as the single source for the co-doping of N and F. AC-NF showed improved electrical conductivity ($3.8\;S\;cm^{-1}$) with N and F contents of 0.6 and 0.1 at%, respectively. The introduction of N and F improved the performance of the pertinent supercapacitor: AC-NF exhibited an improved rate capability at current densities of $0.5-50mA\;cm^{-2}$. The rate capability was higher compared to that of raw activated carbon because N and F codoping increased the electrical conductivity of AC-NF. The developed method for the co-doping of N and F using a single source is cost-effective and yields AC-NF with excellent electrochemical properties; thus, it has promising applications in the commercialization of energy storage devices.

• Transactions on Electrical and Electronic Materials
• /
• 제11권1호
• /
• pp.15-19
• /
• 2010

In this paper, we discuss design considerations for an n-channel metal-oxide-semiconductor field-effect transistor (MOSFET) with a lateral asymmetric channel (LAC) doping profile. We employed a $0.35\;{\mu}m$ standard complementary MOSFET process for fabrication of the devices. The gates to the LAC doping overlap lengths were 0.5, 1.0, and $1.5\;{\mu}m$. The drain current ($I_{ON}$), transconductance ($g_m$), substrate current ($i_{SUB}$), drain to source leakage current ($i_{OFF}$), and channel-hot-electron (CHE) reliability characteristics were taken into account for optimum device design. The LAC devices with shorter overlap lengths demonstrated improved $I_{ON}$ and $g_m$ characteristics. On the other hand, the LAC devices with longer overlap lengths demonstrated improved CHE degradation and $I_{OFF}$ characteristics.

• Korean Chemical Engineering Research
• /
• 제55권2호
• /
• pp.253-257
• /
• 2017

그래핀은 $sp^2$ 결합으로 이루어진 한 겹의 탄소 물질이며, 그래핀 본래의 우수한 물성으로 인해 다양한 분야에서 활용되고 있다. 그래핀의 높은 전기전도도와 전하이동도로 인해서 (광)전자 소자 물질로 주목받고 있다. 화학적 도핑 과정을 통해 n 형과 p 형의 그래핀이 형성 가능하며 이를 이용하여 다양한 구조의 소자 형성이 가능하게 되었다. 본 연구에서 그래핀의 도핑 효과를 선택적으로 증대시키기 위해 유전영동 현상을 도입하였다. 주파수 10 kHz, $5V_{pp}$ (peak-to-peak voltage) 조건에서 유전 영동 현상을 이용하였을 때 금나노입자들이 전극 위치 주변으로 집중됨을 확인하였다. 그래핀의 도핑 효과를 라만 분광법과 전기적 물성 변화를 통하여 조사하였으며, 그래핀에 $AuCl_3$ 용액을 이용한 유전 영동 현상을 통하여, 그래핀 기반 소자의 국소적인 부분에 선택적으로 화학적 도핑이 가능함을 확인하였다. 이러한 연구는 그래핀 기반 소자와 interconnection 등에 활용될 수 있을 것으로 기대된다.