• Bulletin of the Korean Chemical Society
• /
• v.35 no.6
• /
• pp.1670-1674
• /
• 2014

Two red emitters, 2-(7-(4-(diphenylamino)styryl)-2-methyl-4H-chromen-4-ylidene)malonitrile (Red 1) and 2-(7-(julolidylvinyl)-2-methyl-4H-chromen-4-ylidene)malonitrile (Red 2) have been designed and synthesized for application as red-light emitters in organic light emitting diodes (OLEDs). In these red emitters, the julolidine and triphenyl moieties were introduced to the emitting core as electron donors, and the chrome-derived electron accepting groups such as 2-methyl-(4H-chromen-4-ylidene)malononitrile were connected to electron donating moieties by vinyl groups. To explore the electroluminescence properties of these materials, multilayered OLEDs using red materials (Red 1 and Red 2) as dopants in $Alq_3$ host were fabricated. In particular, a device using Red 1 as the dopant material showed maximum luminous efficiencies and power efficiencies of 0.82 cd/A and 0.33 lm/W at $20mA/cm^2$. Also, a device using Red 2 as a dopant material presented the CIEx,y coordinates of (0.67, 0.32) at 7.0 V.

• Journal of Information Display
• /
• v.9 no.2
• /
• pp.18-21
• /
• 2008

We report on white organic light-emitting diodes (WOLEDs) based on single white dopants, $Ir(pq)_2$($F_2$-ppy) and $Ir(F_2-ppy)_2$(pq), where $F_2$-ppy and pq are 2-(2,4-difluorophenyl) pyridine and 2-phenylquinoline, respectively. The similar phosphorescent lifetime of two ligands lead to luminescence emission in two ligands simultaneously. However, the emission color of the devices was reddish, because the energy was not transferred efficiently from the 4,4,N,N'-dicarbazolebiphenyl (CBP) to the $F_2$-ppy ligand, due to the small band gap of the CBP. Accordingly, we used 1,4-phenylenesis(triphenylsilane) (UGH2) with a large band gap, instead of CBP as the host material. As a result, it was possible to adjust the emission color by the host material. The luminous efficiency of the device with $Ir(F_2-ppy)_2$(pq) doped in UGH2 was about 11 cd/A at 0.06 cd/$m^2$.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.6 no.3
• /
• pp.368-376
• /
• 1996

$LiNbO_{3}$ single crystals (undoped, 5 mol% MgO-doped and 5 mol% ZnO-doped) were grown by the floating zone method which has the characteristics of a compositional homogeneity and uniform distribution of the dopants. The optimum growth condition was established experimentally and the defect structures such as domain structure, dislocation structure, slip band, and microtwins were characterized using a microscopic method.

• Journal of information and communication convergence engineering
• /
• v.16 no.1
• /
• pp.43-47
• /
• 2018

The existing modeling of avalanche dominated breakdown in double gate MOSFETs (DGMOSFETs) is not relevant for 10 nm gate lengths, because the avalanche mechanism does not occur when the channel length approaches the carrier scattering length. This paper focuses on the punch through mechanism to analyze the breakdown characteristics in 10 nm DGMOSFETs. The analysis is based on an analytical model for the thermionic-emission and tunneling currents, which is based on two-dimensional distributions of the electric potential, obtained from the Poisson equation, and the Wentzel-Kramers-Brillouin (WKB) approximation for the tunneling probability. The analysis shows that corresponding flat-band-voltage for fixed threshold voltage has a significant impact on the breakdown voltage. To investigate ambiguousness of number of dopants in channel, we compared breakdown voltages of high doping and undoped DGMOSFET and show undoped DGMOSFET is more realistic due to simple flat-band-voltage shift. Given that the flat-band-voltage is a process dependent parameter, the new model can be used to quantify the impact of process-parameter fluctuations on the breakdown voltage.

• 한국정보디스플레이학회:학술대회논문집
• /
• 2006.08a
• /
• pp.351-354
• /
• 2006

We developed highly efficient fluorescent dopants for full-color OLEDs. For blue, green and red OLEDs, current efficiencies of 8.7cd/A, 20.5 cd/A and 11.4 cd/A at $10mA/cm^2$ were achieved, respectively. Lifetime of the blue device was estimated to be 23,000hours at an initial luminance of $1,000cd/m^2$. Moreover, long lifetime over 100,000 hours was estimated in the green and red devices. Furthermore, we obtained a three-component white OLED by using these new fluorescent materials. This white OLED shows a current efficiency of 16.1cd/A with extrapolated lifetime over 70,000 hours at $1,000cd/m^2$, and more excellent color reproducibility for full-color displays with color filters and general lighting, compared to previous fluorescent white OLEDs.

• 한국정보디스플레이학회:학술대회논문집
• /
• 2003.07a
• /
• pp.174-177
• /
• 2003

We report four new phosphorescent iridium(III} complexes with 2,4-diphenyl-1,3-oxazole [$Ir(24dpo)_3$], 2,5-diphenyl-1,3-oxazole [$Ir(25dpo)_3$], 2-(3-thienyl) pyridine [$Ir(3thpyh)_3$] and [Ir(3thpy)2(acac)]. Three of them demonstrate good photophysical properties to be used as dopants to organic polymer matrix or to be used "as is" without a host matrix to fabricate OLEDs. Green and yellow light emission was observed for the photoluminescence: 569/525, 549/498 nm and 557,604/533 (solid state/$CH_2Cl_2$ solution) for $Ir(24dpo)_3$, $Ir(3thpyh)_3$ and $Ir(3thpyh)_2$acac respectively. Room temperature luminescent lifetimes are 2.5 and 1.8 ${\mu}s$ and quantum efficiencies 37 and 53%for $Ir(24dpo)_3$ and $Ir(3thpyh)_3$. The complexes are stable in air and sublimable at low pressure without considerable decomposition. Comparison of physicochemical properties of the reported iridium(III) cyclometalated compounds with that known from literature is carried out.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.15 no.7
• /
• pp.615-620
• /
• 2002

In the case of immobilizing of glucose oxidase into polypyrrole (PPy) using electrosynthesis, the glucose oxidise (GOx) forms a coordinate bond with the polymers backbone. However, because of intrinsic insulation and net-chain of the enzyme, the charge transfer and mass transport are obstructed during the film growth. Therefore, the film growth is dull. We synthesized enzyme electrodes by electropolymerization added some organic solvent, such as ethanol and tetrahydrofuran (THF). The formative seeds of film growth was delayed by adding ethanol. The delay was induced by radical transfer between ethanol and pyrrole monomer. The radical transfer reactions shared the contribution of dopants between electrolyte anion and GOx polyanion. This led to increase amount of immobilized the enzyme in PPy. For the UV absorption spectra of synthetic solution before synthesis and after, in the case of ethanol added, the optical density was slightly decreased for the GOx peaks. It suggests amount of GOx in the solution was decreased and amount of GOx in the film was increased.

• The Korean Journal of Ceramics
• /
• v.5 no.1
• /
• pp.1-11
• /
• 1999

The effect of aliovalent dopents, $Nb_3O_5$ and MnO, on the grain growth kinetics of 12 mol% ceria stabilized tetragonal zirconia polycrystals (Ce-TZP) was studied. All specimens were sintered at $1550^{\circ}C$ for 20 minutes prior to annealing at different temperatures to study grain growth kinetics. Grain growth kinetics of Ce-TZP and 1 mol% $Nb_2O_5$ doped Ce-TZP (Ce-TZP/$Nb_3O_5$) during annealing at 1475, 1550, and $1600^{\circ}C$ adequately matched with square law $(D^2-D_\;o^2=k_at)$. However, grain growth in 1 mol% MnO suppressed grain growth in Ce-TZP by drag force exerted by $Mn^{+2}$ ions which segregated strongly to the positively-charged grain boundaries of Ce-TZP, $Nb_2O_5$ enhanced grain growth by increasing the concentration of vacancies of $Zr^{+4}$ ion and $Ce^{+4}$ ions. Surface analysis with X-ray photoelectron spectroscopy (XPS) showed the segregation of Mn+2 ions to grain boundaries. The kinetics of grain growth obtained in the base Ce-TZP and the Ce-TZPs with the aliovalent dopants were examined in the context of impurity drag effect and space charge effect.

• Journal of the Korean Ceramic Society
• /
• v.47 no.1
• /
• pp.19-25
• /
• 2010

Traditional Kr$\ddot{o}$ger-Vink (K-V) notation defines sites in ionic crystals as interstitial or belonging to host ions. It enables description and calculations of combinations of native and foreign defects, including dopants and substituents. However, some materials exhibit inherently disordered partial occupancy of ions and vacancies, or partial occupancy of two types of ions. For instance, the high temperature disordered phases of $Bi_2O_3$, $Ba_2In_2O_5$, $La_2Mo_2O_9$, mayenite $Ca_{12}Al_{14}O_{33}$, AgI, and $CsHSO_4$ are all good ionic conductors and thus obviously contain charged point defects. But traditional K-V notation cannot account for a charge compensating defect in each case, without resorting to terms like "100% substitution" or "Frenkel disorder". the former arbitrary and awkward and the latter inappropriate. Instead, a K-V compatible nomenclature in which the partially occupied site is defined as the perfect site, has been proposed. I here introduce it thoroughly and provide a number of examples.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.30 no.2
• /
• pp.86-90
• /
• 2017

This work reports the phase-change behavior and thermal stability of doped GeSbTe/GeSbTe bilayers. We prepared the bilayers using RF sputtering, and annealed them at annealing temperature ranging from $100^{\circ}C$ to $400^{\circ}C$. The sheet resistance of the bilayer decreased and saturated with increasing annealing temperature, and the saturated value was close to that of pure GeSbTe film. The surface of the bilayer roughened at $400^{\circ}C$, which corresponds to the surface roughening of doped GeSbTe film. Mixed phases of face-centered cubic and hexagonal close-packed crystalline structures were identified in the bilayers annealed at elevated temperature. These results indicate that the phase-change behavior of the bilayer depends on the concurrent phase-transitions of the two GeSbTe-based films. The dopants in the doped GeSbTe film were diffused out at annealing temperatures of $300^{\circ}C$ or higher, which implies that the thermal stability of the bilayer should be considered for its application in phase-change electronic devices.