• 대한금속재료학회지
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• 제47권5호
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• pp.311-315
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• 2009

2-dimensional (2D) dopant profiling in semiconductor device was carried out by electron holography and scanning capacitance microscopy methods with the same multi-layered p-n junction sample. The dopant profiles obtained from two methods are in good agreement with each other. It demonstrates that reliability of dopant profile measurement can be increased through precise comparison of 2D profiles obtained from various techniques.

• Applied Microscopy
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• 제42권3호
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• pp.158-163
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• 2012

Detailed comparison of low-voltage scanning electron microscopy and electron holography techniques for two-dimensional (2D) dopant profiling was carried out with using the same multilayered p-n junction specimen. The dopant profiles obtained from two methods are in good agreement with each other. It demonstrates that reliability of dopant profile measurement can be increased through precise comparison of 2D profiles obtained from various microscopic techniques.

• EDISON SW 활용 경진대회 논문집
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• 제5회(2016년)
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• pp.347-349
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• 2016

본 논문에서는 dopant density에 의존적인 pn junction의 breakdown 특성을 향상시키기 위하여, doping density와 doping profile에 대하여 분석했다. Doping density와 doping profile은 역방향 junction breakdown voltage를 결정하는 중요한 요소인 공핍영역의 두께와 공핍영역 내에 인가되는 electric field를 결정한다. Uniform doping profile과 Gaussian doping profile을 비교했고, 고전압 환경에서 사용할 수 있는 소자를 제작하는데 더욱 적절한 doping profile과 doping 농도에 대해 기술했다.

• 반도체디스플레이기술학회지
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• 제6권4호
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• pp.5-9
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• 2007

Phase transition and dopant redistribution during silicidation of $CoSi_2$ thin films were characterized depending on their preparation methods. Our results indicated that cleanness of the substrate surface played an important role in the formation of the final phase. This effect was found to be reduced by addition of W resulting in the formation of $CoSi_2$. However, even in this case, the formation of the final phase was achieved at the cost of extra thermal energy, which induced rough interface between the substrate and the silicide film. As for the dopant redistribution, the deposition sequence of Co and Si on SiGe was observed to induce significant differences in the dopant profiles. It was found that co-deposition of Co and Si resulted in the least redistribution of dopants thus maintaining the original dopant profile.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.226-226
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• 2016

PHOLED devices which have the structure of ITO/HAT-CN(5nm)/NPB(50nm)/EML(30nm)/TPBi(10nm)/Alq3(20nm)/LiF(0.8nm)/Al(100nm) are fabricated to investigate the green emission profile in EML by using a gasket doping method. CBP and Ir(ppy)3 (2% wt) are co-deposited homogeneously as a background material of EML for green PHOLED, then a 5nm thickness of additionally doped layer by Ir(btp)2 (8% wt) is formed as a profiler of the green emission. The total thickness of the EML is maintained at 30nm while the distance of the profiler from the HTL/EML interface side (x) is changed in 5nm steps from 0nm to 25nm. As shown in Fig. 1, the green (513nm) peak from Ir(ppy)3 is not observed when Ir(btp)2 is also doped homogeneously because Ir(ppy)3 works as an gasket dopant of the Ir(btp)2 :CBP system. Therefore, in this experment, Ir(btp)2 can be used as a profiler of the green emission in CBP:Ir(ppy)3 system. The emission spectra from the PHOLED devices with different x are shown in Fig. 2. In this gasket doping system, stronger red peak means more energy transfer from green to red dopant or higher exciton density by green dopant. To find the green emission profile, the external quantum efficiency (EQE) at 3mA/cm2 for red peaks are calculated. More green light emission at near EML/HBL interface than that of HTL/EML is observed (insert of Fig. 2). This means that the higher exciton density at near EML/HBL interface in homogeneously doped CBP with Ir(ppy)3. As shown in Fig. 3, excitons can be quenched easily to HTL(NPB) because the T1 level of HTL(2.5eV) is relatively lower than that of EML(2.6eV). On the other hand, the T1 level of HBL(2.7eV) is higher than that of EML.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.374-374
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• 2012

반도체 소자의 크기가 100 nm 이하로 감소되면 통상적인 이온 주입 조건인 이온 에너지, 조사량 및 이온 주입 각도뿐만 아니라 Dose Rate 및 모재 온도가 Dopant Profile을 조절하는 데에 있어서 매우 중요한 인자로 작용한다. 본 연구에서는 Ribbon-beam 및 Spot-beam을 사용하여 활성화 열처리 후 Dopant Profile을 분석하였다. 이온 주입은 모든 시편에서 $BF_2$를 가속 에너지 10 keV 및 조사량 $2{\times}10^{15}/cm^2$로 고정하였다. 이온 주입 후 도펀트 활성화는 100% 질소 분위기 하에서 $850^{\circ}C$-30s 조건으로 RTA 열처리를 수행하였다. Boron 및 Fluorine의 Profile은 SIMS 분석을 통하여 구하였다. Spot-beam은 Ribbon-Beam에 비하여 Dose Rate 및 Cooling Efficiency가 높기 때문에 이온 주입 후 더욱 많은 양의 Primary-defect를 발생시키고 이에 따라 두꺼운 비정질 충을 형성한다. $BF_2$ 이온 주입 된 시편에서 B 및 F의 농도 Peak-height는 a/c 계면에 위치하는 것을 관찰하였다. 또한 B 및 F의 농도 Peak-height는 Silicon 모재의 온도가 증가할수록 증가하는 것을 관찰하였다. Silicon 모재의 온도가 증가함에 따라 Active-area의 면저항이 변화하지 않는 상태에서 Vt (Threshold Voltage)가 급격히 감소함을 관찰 하였다. 비정칠 층의 두께가 증가할수록 a/c 계면 하단에 잔존하는 Residual-defect의 양이 감소하고 이는 측면확산을 감소시키는 역할을 한다는 것이 관찰되었다.

• JSTS:Journal of Semiconductor Technology and Science
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• 제13권6호
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• pp.662-667
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• 2013

The effect of fluorine ions, which can be reacted with boron in high-doped BPSG, is investigated on the contact sidewall wiggling profile in semiconductor process. In the semiconductor device, there are many contacts on $p^+/n^+$ source and drain region. However these types of wiggling profile is only observed at the $n^+$ contact region. As a result, we find that the type of plug implantation dopant can affect the sidewall wiggling profile of contact. By optimizing the proper fluorine gas flow rate, both the straight sidewall profile and the desired electrical characteristics can be obtained. In this paper, we propose a fundamental approach to improve the contact sidewall wiggling profile phenomena, which mostly appear in high-doped BPSG on next-generation DRAM products.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.224-224
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• 2016

Many researchers have been tried to improve the performance of the phosphorescent organic light-emitting diode(PHOLED) by controlling of the dopant profile in the emission layer. In this work, as shown in Fig. 1 insert, a typical red PHOLED device which has the structure of ITO/NPB(50nm)/CBP(30nm)/TPBi(10nm)/Alq3(20nm)/LiF(0.8nm)/Al(100nm) is fabricated with a 5nm thick doping section in the emission layer. The doping section is formed by co-deposition of CBP and Ir(btp)2acac with a doping concentration of 8%, and it's location(x) is changed from HTL/EML interface to EML/HBL in 5nm steps. The current efficiency versus current density of the devices are shown in Fig. 1. By changing the location of doping section, as shown in Fig. 1 and 2, at x=5nm, the efficiency shows the maximum of 3.1 cd/A at 0.5 mA/cm2 and it is slightly decreased when the section is closed to HTL and slightly increased when the section is closed to HBL. If the doping section is closed to HTL(NPB) the excitons can be quenched easily to NPB's triplet state energy level(2.5eV) which is relatively lower than that of CBP(2.6eV). Because there is a hole accumulation at EML/HBL interface the efficiency can be increased slightly when the section is closed to HBL. Even the thickness of the doping section is only 5nm,. the maximum efficiency of 3.1 cd/A with x=5 is closed to that of the homogeneously doped device, 3.3 cd/A, because the diffusion length of the excitons is relatively long. As a result, we confirm that the current efficiency of the PHOLED can be improved by the doping profile optimization such as partially, not homogeneously, doped EML structure.

• 대한전자공학회논문지SD
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• 제40권11호
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• pp.1-8
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• 2003

본 논문에서는 소스/드레인 및 게이트의 불순물에 따른 실리사이드의 의존성을 면저항과 단면 특성 등의 분석을 통하여 연구하였다. 급속 열처리 후에는 As, P, BF₂, B/sub 11/ 등과 같은 불순물에 대한 먼저항의 차이가 거의 나지 않았다. 하지만 실리사이드 형성 후히 고온 열처리시에 그 특성이 매우 크게 변화하였다. BF₂를 주입한 시편에서의 특성이 가장 좋게 나타난 반면, As를 주입한 실리사이드의 특성이 가장 열화되었다. BF₂를 주입한 시편에서의 실리사이드 특성 향상은 flourine에 의한 니켈의 확산 방지 때문인 것으로 여겨진다. 그러므로 실리사이드의 성능 향상을 위해 Ni의 확산을 방지시키는 것이 매우 필요하다.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2002년도 하계종합학술대회 논문집(2)
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• pp.241-244
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• 2002

The dependence of NiSi properties such as sheet resistance and cross-sectional profile on the dopants was characterized. There was little difference of sheet resistance between various dopants such as As, p, BF2 and B just after R'n formation of NiSi. However, the NiSi properties showed strong dependence on the dopants when thermal treatment was applied after RTf formation. BFa .implanted silicon was the best stable property while As implanted one was the worst. The main reason of the excellence property of BF2 sample is believed to be the retardation of Ni diffusion by the F. Therefore, retardation of Ni diffusion is very desirable fur high performance NiSi technology.