• 한국해양학회지
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• v.3 no.1
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• pp.1-7
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• 1968

Two major processes that affect the vertical distribution of apparent pH in the Subarctic region of the Northeastern Pacific Ocean are (1) apparent oxygen utilization by marine organisms and (2) carbonate dissolution. Simplified mathematical approximations show that, in the pH ravge of 7.2 to 8.3, the utilization of 0.1 mM of oxygen (2.24 ml/liter) lowers the pH by 0.20 units and 0.1 mM of carbonate dissolution increases the pH by 0.25 units. Since Oxygen utilization exceeds 0.3 mM while the carbonate dissolution, with respect to the surface, is about 0.05mM, the effect of oxygen utilization is much greater than the dissolution effect of carbonate on the pH of seawater.

• Resources Recycling
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• v.10 no.1
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• pp.42-48
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• 2001

The dissolution behavior of gold and silver from gold-silver alloys in aerated cyanide solutions has been investigated by an electrochemical means as well as a direct measurement of gold and silver ions reported in the bulk solution as a function of time using rotating disc electrodes. The variables studied included oxygen partial pressure, rotating speed of the disc, concentration of cyanide, temperature and composition of the allyos. The dissolution potential and the rate of dissolution were obtained in view of the anodic and cathodic current-potential relationships. The results were discussed in terms of the mixed potential theory. The results showed that the dissolution rate of gold and silver from the alloys was controlled partially by chemical reaction. but largely by transport of either oxygen or cyanide, depending on their relative concentration under the experimental conditions employed in this study.

• Journal of the Korean Electrochemical Society
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• v.6 no.3
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• pp.178-182
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• 2003

The oxygen reduction and NiO dissolution behaviors in Li-Na-K three component carbonate melts have been investigated with various compositions through electrochemical and chemical ways. The oxygen reduction currents and NiO solubilities were measured at $650^{\circ}C$ and atmospheric condition in Li-Na-K =47.4-32.6-20, 60-20-20, 50-40-10, $40-40-20 mol\%$ carbonate melts. The oxygen reduction currents showed dependence on the composition, indicating oxygen solubility is a function of carbonate composition. At the composition of $ Li-Na-K=50-40-10 mol%$, a broader peak was observed, suggesting different oxygen reduction mechanism probably prevails in this composition. In contrast, insignificant differences of NiO solubility were obtained among the compositions.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.35D no.10
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• pp.29-38
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• 1998

In this paper, we have induced a model for the growth and dissolution of oxygen precipitates which is generated during arbitrary thermal treatments or VLSI processes in CZ-grown silicon. Based on diffusion-limited growth law and detailed balance equilibrium theory, growth and dissolution rates are induced and inserted into a set of chemical rate equations and a Fokker-Planck equation. Then this is solved by numerical analysis. And because phenomenon at the silicon surface must be considered differently in various annealing conditions, in particular in $O_2$ ambient we have considered the growth model of SiO$_2$ at the surface of silicon wafer and the enhancement of oxygen solubility. By this method, oxygen depth profile and density distribution of oxygen precipitates are calculated more accurately than the other simulation results.

• Journal of the Korean Ceramic Society
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• v.37 no.3
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• pp.271-279
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• 2000

5 m/o Yb-doped SrCeO3 proton conductor was prepared by a solid state reaction method and its total electriccal conductivity measured as a function of both oxygen partial pressure and water vapor partial pressure in the temperature range of 500~100$0^{\circ}C$. From the total conductivity have been deconvoluted the partial conductivities of oxide ions, protons, and holes, respectively, on the basis of the defect model proposed. The equilibrium constant of hydrogen-dissolution reaction, proton concentration, and mobilities of oxygen vacancies and protons have subsequently been evaluated. It is verified that SrCe1-xYbxO3 is a mixed conductor of holes, protons and oxide ions and the proton conduction prevails as temperature decreases and water vapor pressure increases. The heat of water dissolution takes a representative value of $\Delta$HoH=-(140$\pm$20) kJ/mol-H2O, but tends to be less negative with increasing temperature. Migration enthalpies of proton and oxygen vacancy are extracted as 0.83$\pm$0.10 eV and 0.81$\pm$0.01 eV, respectively.

• The Korean Journal of Ceramics
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• v.4 no.2
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• pp.128-135
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• 1998

The paper gives a brief introduction to protonic defects and their chemistry, thermodynamics and transport in oxides. The temperature dependence of the equilibrium concentration of protons is illustrated and compared for different acceptor-doped oxides. The difficulties of saturating as well as emptying the oxides of protons are discussed. In order to illustrate the possibility of lattice relaxation of defects, a conceptual study is made of a case where the enthalpy of dissolution of protons(water) at the cost of oxygen vacancies is assumed dependent on the concentration of vacancies. It is shown how this changes the behavior of hydration curves vs temperature and water vapour pressure. finally, a discussion is given on the water uptake in heavily oxygen deficient oxides; how water uptake may affect order-disorder in the oxygen sublattice and eventually lead to defective, disordered or ordered oxyhydroxides or hydroxides of potential interest as intermediate temperature proton conductions.

• Korean Journal of Materials Research
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• v.13 no.7
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• pp.420-423
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• 2003

Coatings of TiCrN ion-plated on a steel substrate was oxidized at $800^{\circ}C$ in air, and their oxidation mechanism was presented. During oxidation, substrate elements and Ti and Cr in the coating always diffused outwardly to form the oxide scale. Simultaneously, oxygen from the atmosphere diffused inward1y to react with Ti and Cr to form $TiO_2$and $Cr_2$$O_3$, respectively. Also, the counter-diffusion of cations and oxygen resulted in some oxygen dissolution in the unoxidized TiCrN coating, and Fe dissolution in the oxide scale. When the Ti content in the coating was high, the $TiO_2$-forming tendency was strong, while when the Cr content was high, the $Cr_2$$O_3$-forming tendency was strong.

• Journal of the Korean Society of Marine Environment & Safety
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• v.16 no.4
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• pp.339-344
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• 2010

Oxygen depleted water mass can damage aquatic animals not only in direct way but also in indirect way by generating toxic substances including occurrence of hydrogen sulfide and ammonia which are also highly detrimental to animal life in the water mass. An oxygen dissolution device was developed, which makes turnover of the oxygen rich (over 20 mg/L) surface water down to the bottom where hypoxia is evident and tested the device in terms of oxygen recovery in the oxygen depleted bottom water. the device with turnover rates of $3.6\;m^2$/min at the liquid oxygen injection rate of 48~26.3 L/min could recover dissolved oxygen level to 7~25 mg/L at depth 7 m to lead to the dissolution level of over 90% by the supply of liquid oxygen. The running advantage of the device is that it does not require any auxiliary tank and higher energy for operation. Therefore, it can be highly useful device to relieve damages to the farmed animals in the oxygen depleted waters.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.11 no.3
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• pp.89-95
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• 2001

The CZ-silicon crystal was annealed at $1350^{\circ}C$ to dissolve the vacancy type grown-in defects. A this temperature, the equilibrium concentration of the oxygen in the silicon crystal is around $1.7{\times}10^{18}$ which induces the oxygen undersaturation in the silicon crystal. This situation results in the faster dissolution of the grown-in defects in the bulk of the silicon wafer than near the surface. This indicates the possibility that the presence of the higher concentration of silicon interstitial hinders the dissolution of the grown-in defects, which were known to compose of the vacancy clusters with surrounding silicon oxide film. This expectation was confirmed by the observation that the slower dissolution of the grown-in defects near the surface of the silicon wafer in the oxygen atmosphere than in the argon atmosphere. This result is quite opposite to the previous argument hat presence of the excess silicon interstitial leads to faster dissolution of the vacancy type defects.

• 한국전기화학회:학술대회논문집
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• 2003.04a
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• pp.9-9
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• 2003