• 제목/요약/키워드: display material

검색결과 1,669건 처리시간 0.03초

Fabrication of Novel Thin Film Diode with Multi-step Anodic Oxidation and Post Heat-treatment

  • Hong, Sung-Jei;Lee, Chan-Jae;Moon, Dae-Gyu;Kim, Won-Keun;Han, Jeong-In
    • Transactions on Electrical and Electronic Materials
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    • 제3권4호
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    • pp.27-31
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    • 2002
  • Thin film diode with reliable interfacial structure was fabricated by using multi-step anodic oxidation. The thickness of the oxide layer was preciously controlled with anodic voltage. Also, interfacial structure between oxide layer and top electrode was improved by applying post heat-treatment. The thin film diode showed symmetric and stable I-V characteristics after the post heat-treatment.

Growth of Vertically Aligned CNTs with Ultra Thin Ni Catalysts

  • Ryu, Je-Hwang;Yu, Yi-Yin;Lee, Chang-Seok;Jang, Jin;Park, Kyu-Chang;Kim, Ki-Seo
    • Transactions on Electrical and Electronic Materials
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    • 제9권2호
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    • pp.62-66
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    • 2008
  • We report on the growth mechanism of vertically aligned carbon nanotubes (VACNTs) using ultra thin Ni catalysts and direct current plasma enhanced chemical vapor deposition (PECVD) system. The CNTs were grown with -600 V bias to substrate electrode and catalyst thickness variation of 0.07 nm to 3 nm. The CNT density was reduced with catalyst thickness reduction and increased growth time. Cone like CNTs were grown with ultra thin Ni thickness, and it results from an etch of carbon network by reactive etchant species and continuous carbon precipitation on CNT walls. Vertically aligned sparse CNTs can be grown with ultra thin Ni catalyst.

High efficiency multiple quantum well device structure in red phosphorescent OLEDs

  • Park, Tae-Jin;Jeon, Woo-Sik;Jang, Jin;Pode, Ramchandra;Kwon, Jang-Hyuk
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2009년도 9th International Meeting on Information Display
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    • pp.196-199
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    • 2009
  • We report the multiple quantum well (MQW) structure for highly efficient red phosphorescent OLEDs. Various triplet quantum well devices from a single well to five quantum wells are realized using a wide band-gap hole and electron transporting layers, narrow band-gap host and dopant material, and charge control layers (CCL). The maximum external quantum efficiency of 14.8 % with a two quantum well device structure is obtained, which is the highest value among the red phosphorescent OLEDs using same dopant.

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Fabrication of Flexible Photoluminescent Display for Improving Reliability

  • Choi, Kyung-Cheol;Kim, Seung-Hun;Jang, Cheol;Kim, Kuk-Joo;Ahn, Sung-Il
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2009년도 9th International Meeting on Information Display
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    • pp.337-338
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    • 2009
  • A flexible photoluminescent display device was proposed and fabrication technology with a low process temperature was investigated in order to improve its reliability. The proposed flexible photoluminescent display showed good characteristics in reliability and flexibility. The lifetime of the proposed flexible photoluminescent displays with organics components is estimated to be approximately more than 10,000 hours.

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Enhancement of the Optical Performance by Optimization of Optical Sheets in Direct-illumination LCD Backlight

  • Park, Gyeung-Ju;Kim, Young-Gyu;Yi, Jong-Hoon;Kwon, Jin-Hyuk;Park, Jae-Hyun;Kim, Sung-Hoon;Kim, Byoung-Ku;Shin, Jong-Keun;Soh, Hoi-Sup
    • Journal of the Optical Society of Korea
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    • 제13권1호
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    • pp.152-157
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    • 2009
  • The structure of the prism sheet and the reflective polarizer sheet in the direct - illumination liquid crystal display (LCD) backlight is optimized and fabricated. The apex angle of the prism sheet was changed from 90 degree to 96.5 and 101.5 degree and the angular spread of the diffuser films attached on the reflective polarizer sheet was changed from 7 to 1.5 degrees. The measured view angle, the normal luminance, and the contrast ratio from the optimized backlight unit showed improved optical performances.

잉크젯 프린팅 원리를 적용한 디스플레이 기술 개발 동향 (Trends in Display Technology Development Applying Inkjet Printing Principles)

  • 권병화;주철웅
    • 전자통신동향분석
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    • 제38권1호
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    • pp.26-35
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    • 2023
  • Inkjet printing is a typical printing technology with many advantages, such as material cost reduction, noncontact pattern formation without a mask, and process simplification. With the recent and rapid development of ink materials, parts and equipment, and process technologies related to inkjet printing, it is becoming a major process in various areas of the display industry. In particular, for the QD-OLED (quantum dot-organic light-emitting diode) display announced by Samsung Display in 2022, quantum dot pixel production by applying inkjet printing is a key technology. We analyze inkjet printing technology for mass production applied to the display industry and discuss the technology development trends in academia and industry toward the realization of next-generation displays.

소스/드레인 전극의 두께변화에 따른 TIPS-pentacene 트랜지스터의 전기적 특성 연구 (Study on die electric characteristics of TIPS-pentacene transistors with variation of electrode thickness)

  • 양진우;형건우;김영관
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2009년도 하계학술대회 논문집
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    • pp.323-324
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    • 2009
  • We investigated the electrical properties of tris-isopropylsilylethynyl (TIPS)-pentacene organic thin-film transistors (OTFTs) employing Ni/Ag source/drain electrodes. The gap height between the gate insulator and S/D electrode was controlled by changing the thickness of Ag under-layer(20, 30, 40 and 50nm). After evaporating the Ni under-layer, TIPS pentacene channel material was dropping the gap between the gate insulator and SID electrodes. The electrical proprieties of OTFT such as filed-effect mobility, on/off ratio, threshold voltage and subthreshold slope were significantly influenced by the gap height.

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Preparation and Characterization of $SnO_2$ Thin Film by Atomic Layer Deposition

  • Kwack, Young-Jin;Choi, Woon-Seop
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2009년도 하계학술대회 논문집
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    • pp.250-250
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    • 2009
  • Thin film of $SnO_2$ was fabricated from plasma enhanced atomic layer deposition technology with bubbler type injector system by using TEMASn (tetrakisethylmethylamino tin) precursor. Mostly crystalline of $SnO_2$ films can be obtained with oxygen plasma and with water at relatively low temperature of $150^{\circ}C$. $SnO_2$ was deposited as an uniform rate of $1.0A^{\circ}$/cycle. In order to obtain uniform film, a seed oxide material was used before TEMASn deposition in ALD process. The process parameters were controlled to obtain dense thin film by atomic deposition methodology. The morphology and characterization of thin film with optimized process condition will be discussed.

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Synthesis, application of thermally stable red dyes for LCD colorfilter ; Influence of dye structures on the aggregation property in the film state

  • Sakong, Chun;Kim, Young-Do;Kim, Jae-Pil
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2008년도 International Meeting on Information Display
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    • pp.847-850
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    • 2008
  • Three thermally stable red dyes of azo, quinacridone and perylene derivatives were synthesized and dye-based color filters were manufactured for liquid crystal display. Aggregation behavior of the dyes and their spectral property in film state were investigated by concentration dependent spectroscopy and field emission scanning electron microscopy (FE-SEM). These dyes have remarkable difference on their aggregation behavior in film state. Such difference of aggregation behavior affects the spectral property of the film, and it can cause decreasing the transmittance of dye-based color filters.

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High efficiency and long lifetime green OLED with a new electron transport material and a three-component RGB white OLED for full-color display applications.

  • Tokairin, Hiroshi;Kuma, Hitoshi;Yamamoto, Hiroshi;Funahashi, Masakazu;Fukuoka, Kenichi;Hosokawa, Chishio
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2005년도 International Meeting on Information Displayvol.II
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    • pp.1138-1142
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    • 2005
  • We achieved a highly efficient green OLED with an efficiency of 30cd/A by using a new electron transport material and optimizing the device structure. The luminous efficiency was 16.8lm/W at $3000cd/m^2$ and the lifetime was over 60,000hr at an initial luminance of $1000cd/m^2$. Furthermore, we obtained a threecomponent RGB white OLED by using the highly efficient green material. This RGB white OLED shows more excellent color reproducibility for full color displays with color filters, compared to a twocomponent white OLED.

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