• Journal of Broadcast Engineering
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• v.25 no.4
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• pp.497-506
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• 2020

A chameleonic surface proposed in this study was a pin-art and 3D display device for generating arbitrary shapes. A smooth and continuous surface was formed using slim telescopic actuators and high-elasticity composite material. Realistic 3D shapes were continuously generated by projecting dynamic mapping images on the surface. A slim telescopic actuator was designed to show long strokes and minimize area for staking. A 3D shape was formed by thrusting and extruding the high-elasticity material using multiple telescopic actuators. This structure was advantageous for generating arbitrary continuous surface, projecting dynamic images and lightening weight. Because of real-time synchronization, a distributed controller based on EtherCAT was applied to operate hundreds of telescopic actuators smoothly. Integrated operating software consecutively generated realistic scenes by coordinating extruded shapes and projecting 3D image from multiple projectors. An opera content was optimized for the chameleon surface and showed to an audience in an actual concert.

• Journal of Conservation Science
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• v.33 no.3
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• pp.155-165
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• 2017

As interest in the public display of art and outdoor sculptures is increasing, the conservation and treatment of these sculptures is becoming increasingly crucial. Long-term exposure to the natural elements and atmospheric pollution can cause corrosion and deterioration in outdoor sculptures. In the case of Kim Chan Shik's "Feeling", which was exhibited in the outdoor sculpture park at the National Museum of Modern and Contemporary Art (MMCA), the patina of the sculpture was damaged during a long outdoor exhibition. Therefore, the treatment process was as follows: recording of condition, sanding, repatination, and wax coating. Consequently, the sculpture was restored similar to the original. Chemical analysis revealed that the sculpture was crafted from bronze and was cast from a quaternary alloy of Cu-Pb-Sn-Zn. The welding is lower in Zn, Sn, and Pb content than the metal used in the sculpture itself. Bright strains contain about 13.0 wt% Sn and 10.5 wt% Pb. The strains are higher in Sn and Pb content than the rest of the metal in the sculpture (7.0 wt% Sn and 4.4 wt% Pb). As a result of component analysis and microstructure observation, the material is estimated to have been made by casting without artificial treatment.

• Journal of the Korean Electrochemical Society
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• v.2 no.1
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• pp.5-12
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• 1999

By the PVA-precursor method, polycrystalline powder of $Li_xNi_{1-y}Co_yO_2$, cathode material for lithium battery, was synthesized. Using the powder as the cathode material, lithium ion batteries were fabricated, whose electrochemical properties were measured. The effect of changing synthetic conditions, such as PvA/metal mole ratio, concentration of PVA, degree of polymerization of PVA, pyrolysis condition, and metal stoichiometry, on the battery performance was investigated. Considering the initial performance of the cell, the optimum stoichiometry of the $Li_xNi_{1-y}Co_yO_2$, synthesized by the PVA-precursor method was observed to be x: 1.0 and y=0.26. A minor phase of $Li_2CO_3$, which was generated by the residual carbon in the powder precursor, deteriorated the performance of the cell. In order to eliminate the minor phase, the precursor had to be pyrolyzed under the flow of dry air. Annealing the powder at $500^{\circ}C$ under the flow of dry air also eliminated the minor phase, and the performance of the cell was largely improved by the treatment.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.29 no.8
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• pp.461-465
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• 2016

n-type silicon shows the better tolerance towards metal impurities with a higher minority carrier lifetime compared to p-type silicon substrate. Due to better lifetime stability as compared to p-type during illumination made the photovoltaic community to switch toward n-type wafers for high efficiency silicon solar cells. We fabricated the front electrode of the n-type solar cell with AgAl paste. The electrodes characteristics of the AgAl paste depend on the contact junction depth that is closely related to the firing temperature. Metal contact depth with p+ emitter, with optimized depth is important as it influence the resistance. In this study, we optimize the firing condition for the effective formation of the metal depth by varying the firing condition. The firing was carried out at temperatures below $670^{\circ}C$ with low contact depth and high contact resistance. It was noted that the contact resistance was reduced with the increase of firing temperature. The contact resistance of $5.99m{\Omega}cm^2$ was shown for the optimum firing temperature of $865^{\circ}C$. Over $900^{\circ}C$, contact junction is bonded to the Si through the emitter, resulting the contact resistance to shunt. we obtained photovoltaic parameter such as fill factor of 76.68%, short-circuit current of $40.2mA/cm^2$, open-circuit voltage of 620 mV and convert efficiency of 19.11%.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.66-66
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• 2008

Most of the properties of ITO films depend on their substrate nature, deposition techniques and ITO film composition. For the display panel application, it is normally deposited on the glass substrate which has high strain point (>575 degree) and must be deposited at a temperature higher than $250^{\circ}C$ and then annealed at a temperature higher than $300^{\circ}C$ in order to high optical transmittance in the visible region, low reactivity and chemical duration. But the high strain point glass (HSPG) used as FPDs is blocking popularization of large sizes FPDs because it is more expensive than a soda lime glass (SLG). If the SLG could be used as substrate for FPDs, then diffusion of Na ion from the substrate occurs into the ITO films during annealing or heat treatment on manufacturing process and it affects the properties. Therefore proper care should be followed to minimize Na ion diffusion. In this study, we investigate the electrical, optical and structural properties of ITO films deposited on the SLG and the Asahi glass(PD200) substrate by rf magnetron sputtering using a ceramic target ($In_2O_3:SnO_2$, 90:10wt.%). These films were annealed in $N_2$ and air atmosphere at $400^{\circ}C$ for 20min, 1hr, and 2hrs. ITO films deposited on the SLG show a high electrical resistivity and structural defect as compared with those deposited on the PD200 due to the Na ion from the SLG on diffuse to the ITO film by annealing. However these properties can be improved by introducing a barrier layer of $SiO_2$ or $Al_2O_3$ between ITO film and the SLG substrate. The characteristics of films were examined by the 4-point probe, FE-SEM, UV-VIS spectrometer, and X-ray diffraction. SIMS analysis confirmed that barrier layer inhibited Na ion diffusion from the SLG.

• Journal of the Microelectronics and Packaging Society
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• v.9 no.1
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• pp.9-13
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• 2002

Recently, Organic electroluminescent devices (OELDs) have been demonstrated the medium sized full color display with effective multi-layer thin films. In this study, the multi-layer OELDs were prepared on the patterened ITO (indium tin oxide)/glass substrates by the vacuum thermal evaporation method. The low molecule compounds such as $Alq_3$(trim-(8-hydroxyquinoline)aluminum) and CTM (carrier transfer material) as the electron transport and injection layers as well as TPD (triphenyl-diamine) and CuPc (copper phthalocyanine) as the hole transport and injection layers were used. The luminance was rapidly increased above the threshold voltage of 10 V. The luminance and emission spectrum for the OELDs samples with $A1/CTM/Alq_3$/TPD/1TO structures were found to be 430 cd/$m^2$and 512 nm at 17 V showing green color emission. In contrast, the samples with $Li-A1/Alq_3$/TPD/CuPC/1TO multi-structures showed 508 nm in emission spectrum and 650 cd/$m^2$at 17 V in the luminance. The increment of luminance may be ascribed to the improved efficiency of recombination in the region of the emission layers by the deposition of CuPc as hole injection layer and the low work function of the Li-Al electrode compared to the Al electrode.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.25 no.10
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• pp.805-810
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• 2012

Transparent conducting oxides (TCOs) have wide range of application areas in transparent electrode for display devices, Transparent coating for solar energy heat mirrors, and electromagnetic wave shield. $SnO_2$ is intrinsically an n-type semiconductor due to oxygen deficiencies and has a high energy-band gap more than 3.5 eV. It is known as a transparent conducting oxide because of its low resistivity of $10^{-3}{\Omega}{\cdot}cm$ and high transmittance over 90% in visible region. In this study, co-doping effects of Al and Y on the properties of $SnO_2$ were investigated. The addition of Y in $SnO_2$ was tried to create oxygen vacancies that increase the diffusivity of oxygen ions for the densification of $SnO_2$. The addition of Al was expected to increase the electron concentration. Once, we observed solubility limit of $SnO_2$ single-doped with Al and Y. $\{(x/2)Al_2O_3+(x/2)Y_2O_3\}-SnO_2$ was used for the source of Al and Y to prevent the evaporation of $Al_2O_3$ and for the charge compensation. And we observed the valence changes of aluminium oxide because generally reported of valence changes of aluminium oxide in Tin - Aluminium binary system. The electrical properties, solubility limit, densification and microstructure of $SnO_2$ co-doped with Al and Y will be discussed.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.05a
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• pp.139-141
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• 2005

이번 실험에서는 변방전형 교류 PDP에서의 3차원적인 전자온도와 이온밀도의 측정을 마이크로 랑뮈르 탐침법을 통해 실험적으로 연구하였다. 스테핑 모터에 연결된 마이크로 랑뮈르 탐침은 20um씩 움직이며 탐침에 인가하는 플러스와 마이너스의 직류전압을 통해 I-V곡선을 구할 수 있고 이를 통해서 전자온도와 플라스마 밀도를 구할 수 있다. Ne+Xe(4%) 200Torr의 혼합가스에서 전극의 테두리를 따라(X축) 전자온도 및 플라스마 밀도를 측정한 결과 중앙지점에서와 전극의 경계지역에서 이온밀도는 $7.69{\sim}11.1{\times}10^{11}cm^{-3}$ 까지 측정되었다. 또한 전자온도는 플라스마 밀도와 균형적인 관계에 있다는 것은 주목할 만하다. 전자온도는 전극 사이의 중심에서 가장 적게 1.3 ~ 3.15eV까지 측정되었다. Y축으로 측정했을 경우 이온 밀도와 전자온도는 전극 갭 중앙에서부터 약 80um 떨어진 지점에서 서로 교차하며 증가 및 감소였으며 이온밀도는 $8.3{\sim}11.1{\times}10^{11}cm^{-3}$로 측정되었고 전자온도는 이와 균형적인 관계를 가지고 1.2~1.6eV로 측정되었다. 또한 이러한 특성은 AC PDP 에서 나타나는 줄무늬 현상과 관련이 있는 것으로 보인다. Z축으로 측정했을 경우 약 125um높이에서 가장 높게 측정되었으며 $1.1{\times}10^{12}cm^{-3}$정도로 측정되었다.

• Analytical Science and Technology
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• v.35 no.5
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• pp.205-211
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• 2022

Deuterium (D) is an isotope with one more neutron number than hydrogen (H). Heavy elements rarely change their chemical properties with little effect even if the number of neutrons increases, but low-mass elements change their vibration energy, diffusion rate, and reaction rate because the effect cannot be ignored, which is called an isotope effect. Recently, in the semiconductor and display industries, there is a trend to replace hydrogen gas (H₂) with deuterium gas (D₂) in order to improve process stability and product quality by using the isotope effect. In addition, as the demand for D₂ in industries increases, domestic gas producers are making efforts to produce and supply D₂ on their own. In the case of high purity D₂, most of them are produced by electrolysis of heavy water (D₂O), and among D₂, hydrogen deuteride (HD) molecules are present as isotope impurities. Therefore, in order to maximize the isotope effect of hydrogen in the electronic industry, HD, which is an isotope impurity of D₂ used in the process, should be small amount. To this end, purity analysis of D₂ for industrial processing is essential. In this study, HD quantitative analysis of D₂ for high purity D₂ purity analysis was established and hydrogen isotope RM (Reference material) was developed. Since hydrogen isotopes are difficult to analyze with general gas analysis instrument, they were analyzed using a high-precision mass spectrometer (Gas/MS, Finnigan MAT271). High purity HD gas was injected into Gas/MS, sensitivity was determined by a signal according to pressure, and HD concentrations in two bottles of D₂ were quantified using the corresponding sensitivity. The amount fraction of HD in each D₂ was (4518 ± 275) μmol/mol, (2282 ± 144) μmol/mol. D₂, which quantifies HD amount using the developed quantitative analysis method, will be manufactured with hydrogen isotope RM and distributed for quality management and maintenance of electronic industries and gas producers in the future.

• Journal of Korean Society of Forest Science
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• v.98 no.4
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• pp.370-378
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• 2009

This study tries to provide the basic direction to form the arboretum with the distinct features by providing the basic data to help the differentiated strategy for each arboretum. For this purpose, the users' pattern, importance of the indicator by the function, and the stimulation and specialization importance were examined for Daegu Arboretum, Gyeongbuk Arboretum and Gyeongnam Arboretum in Gyeongsang Province. The result says, looking into the functions of arboretum, the collection function showed the highest importance in the preservation of the endangered crisis species; the display function showed the highest in the use as the nature experiencing spaces through the plant exhibition; the research function showed the highest in the study on Plant Systematics; the education function showed the highest in the protection of the native plants; and the recreational function showed the highest in the healthy recreational space. In the plan for the promotion of the arboretum showed the highest in the public education program operation such as the narration from arboretum and education for plant. Therefore, it is considered to need the system setup such as the education program, material development and specialist training in terms of the arboretum. For the specialization plan for arboretum in this study, it seem desirable to concentrate on the research and education related to the natural resources renewal, for Daegu Arboretum; to concentrate on the resort site for the protection and display of the species and the disabled visitors by utilizing the geographical traits in the mountains, for Gyeongbuk Arboretum; to create the specialization plan mainly for the tree species suitable for the warm weather and for the children.