• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2004년도 추계학술대회 논문집
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• pp.369-372
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• 2004

Photo-induced surface alignment is charming as a non-contact photo-patternable alignment technology which can be used in the next generation of displays, such as large area, multi-domain. For decades, many polymer film have been investigated and developed to be used in the photo alignment. Among these photoreactive materials, recently developed polyimide, Chloromethylated Polyimide(CMPI) now became the focus of interests in this area because of its high photosensitivity and superior thermal stability. In this report, we present micro patterning method to form the nanoscale structure by Mask-Less laser patterning using this CMPI film and NSOM probe.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 추계학술대회 논문집
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• pp.287-287
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• 2007

The ferroelectric and electric properties of UV-irradiated bismuth lanthanum titanate (BLT) films prepared using photosensitive starting precursors were characterized. The effects of lanthanum doping on ferroelectric and electric properties were investigated by polarization-electric field hysteresis loops and leakage current-voltage measurements. X-ray diffractometer and ellipsometry were served to provide the information about the crystalline structure and thickness of the films after annealing. The images of the surface microstructure and direct-patterned BLT films were observed by using scanning electron microscopy. The effects of lanthanum doping on the electric properties of direct-pattern able BLT films and their direct-patterning were studied.

• 대한금속재료학회지
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• 제48권2호
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• pp.163-168
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• 2010

We here describe the laser-direct patterning of nanostructured metal thin films. This method involves light-matter interaction in which a pulsed laser beam impinging on the film generates a thermoelastic force that plays a role to detach the film from the substrate or underlying layers. A moderate cohesion of the nanostructured film enables localized desorption of the material upon irradiation by a spatiallymodulated laser beam, giving good fidelity with the transfered pattern. This photoresist-free process provides a simple high-resolution scheme for patterning metal thin films.

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2009년도 춘계학술대회 논문집
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• pp.115-116
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• 2009

• 접착 및 계면
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• 제24권4호
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• pp.120-123
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• 2023

우수한 기계적, 전기적 특성을 지닌 그래핀은 기존 재료보다 우수한 물성을 가지고 있기 때문에 전세계의 많은 연구자들에게 각광을 받고 있다. 이러한 그래핀을 전자소자에 응용하기 위해서는 전사 과정 및 패터닝 공정이 반드시 필요하나, 이 과정에서 무수한 결함이 발생되어 그래핀의 특성을 크게 저하시킨다는 문제점이 있다. 그래핀의 우수한 특성 및 상용화를 위해 전사 과정 및 패터닝 공정을 한 번에 진행할 수 있는 공정 개발이 다양한 시도를 통해 행해지고 있다. 본 연구에서는 고분자 나노와이어를 마스크로 사용하여 정밀한 패턴과 동시에 그래핀이 직성장할 수 있는 새로운 성장법을 개발하였다. 개발된 새로운 성장법을 통해 미래의 나노소재 기반 우수한 전자소자를 구현할 수 있을 것이라 기대된다.

• 한국레이저가공학회지
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• 제3권2호
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• pp.35-43
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• 2000

Laser direct patterning of the coated photoresit (PMER-NSG31B) layer was studied to make halftone dots on gravure printing roll. The selective laser hardening of photoresist by Ar-ion laser(wavelength : 333.6nm∼363.8nm) was controlled by the A/O modulator. The coating thickness in the range of 5㎛∼11㎛ could be obtained by using the up-down directional moving device along the vertically located roll. The width, thickness and hardness of the hardened lines formed under laser power of 200∼260㎽ and irradiation time of 4.4∼6.6$\mu$ sec/point were investigated after developing. The hardened width increased according to the increase of coating thickness. Though the hardened thickness was changed due to the effect of the developing solution, the hardened layer showed good resistance to the scratching of 2H pencil. Also, the hardened minimum line widths of 10㎛ could be obtained. The change of line width was also found after etching, and the minimum line widths of 6㎛ could be obtained. The hardened lines showed the good resistance to the etching solution. Finally, the experimental data could be applied to make gravure halftone dots using the developed imaging process, successfully.

• International Journal of Precision Engineering and Manufacturing
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• 제3권1호
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• pp.26-32
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• 2002

Laser direct patterning of the coated photoresist (PMER-NSG31B) layer was studied to make halftone dots on the gravure printing roll. The selective laser hardening of the photoresist by Ar-ion laser(wavelength: 333.6∼363.8 nm) was controlled by the A/O modulator. The coating thickness in the range of 5∼11㎛ could be obtained by using the up-down directional moving device along the vertically located roll. The width, thickness and hardness of the hardened lines farmed under the laser power of 200∼260mW and irradiation time of 4.4∼6.6 $\mu$ sec/point were investigated after developing. The hardened width increased as the coating thickness increased. Though the hardened thickness was changed due to the effect of the developing solution, the hardened layer showed good resistance to the scratching of 2H pencil. Also, the hardened minimum line width of 10㎛ could be obtained. The change of line width was also found after etching, and the minimum line widths of 6㎛ could be obtained. The hardened lines showed the good resistance to the etching solution. Finally, the experimental data could be applied to make gravure halftone dots using the developed imaging process, successfully.

• 한국정밀공학회지
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• 제27권10호
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• pp.93-99
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• 2010

A nano-stereolithography is the direct patterning process with a nanoscale resolution using twophoton absorption induced by a femtosecond laser. However, in the majority of the works, the fabrication of 3D microstructures have been done only onto transparent glass due to the use of an oil immersion objective lens for achieving a high resolution. In this work, the coaxial illumination and the auto-focusing system are proposed for the direct patterning of nano-precision patterns on an opaque substrate such as a silicon wafer and a metal substrate. Through this work, 3D polymer structures and metallic patterns are fabricated on a silicon wafer using the developed process.

• 반도체디스플레이기술학회지
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• 제18권3호
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• pp.72-76
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• 2019

A Q-switched diode-pumped neodymium-doped yttrium vanadate (YVO₄, λ =1064nm) laser was used for the direct patterning of indium tin oxide (ITO) films on glass substrate. During the laser direct patterning, the laser beam was incident on the two different directions of glass substrate and the laser ablated patterns were compared and analyzed. At a low scanning speed of laser beam, the larger laser etched lines were obtained by laser beam incident in reverse side of glass substrate. On the contrary, at a higher scanning speed, the larger etched pattern sizes were found in case of the beam incidence from front side of glass substrate. Furthermore, it was impossible to find no ablated patterns in some laser beam conditions for the laser beam from reverse side at a much higher scanning speed and repetition rate of laser beam. The laser beam is expected to be transferred and scattered through the glass substrate and the laser beam energy is thought to be also dispersed and much more influenced by the overlapping of each laser beam spot.

• 마이크로전자및패키징학회지
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• 제22권4호
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• pp.83-89
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• 2015

본 논문에서는 졸-침투와 직접-패턴 공정을 이용하여 향상된 압전 후막의 전기적 특성과 우수한 패터닝 특성을 동시에 만족할 수 있는 제작 방법을 제시한다. 저온(< $850^{\circ}C$) 공정 후 후막의 고밀도 및 직접-패턴의 목적을 달성하기 위해서, 감광성 티탄산 지르콘산 연 ($Pb(Zr,Ti)O_3$, PZT) 졸을 스크린인쇄된 PZT 후막 내부로 침투시켰다. 직접-패턴된 PZT막은 포토크롬마스크와 UV 조사에 의해서 일정한 간격으로 인쇄된 후막 위에 성공적으로 형성되었다. 스크린인쇄된 후막은 분말형태의 기공성 구조를 갖고 있어 조사된 UV빛이 산란되기 때문에, 감광성 졸-침투 공정을 할 때 PZT 후막의 특성을 증가시키기 위한 공정의 최적화가 필요하다. 침투된 감광성 PZT 졸의 농도, 조사된 UV 시간 및 용매 현상 시간을 최적화한 결과, 0.35 M의 PZT 농도, 4 분의 UV 조사시간과 15 초의 용매 현상시간으로 졸-침투된 PZT 후막은 $800^{\circ}C$ 소결 온도에서 입자들의 성장에 의해 치밀화 정도가 증가되었다. 또한 PZT후막의 강유전 특성(잔류분극 및 항복 전압)도 향상되었다. 특히 잔류분극값은 스크린인쇄된 후막보다 약 4배정도 증가되었다. 이렇게 제작된 후막은 어레이타입의 압전형 마이크로미터크기의 센서 및 액츄에이터 등에 응용 가능성을 제시할 수 있었다.