• Journal of the Microelectronics and Packaging Society
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• v.27 no.4
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• pp.47-54
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• 2020

Integration of active and passive waveguides is an essential component of the photonic integrated circuit and its elements. Butt joint is one of the important technologies to accomplish it with significant advantages. However, it suffers from high optical loss at the butt joint junction and need of accurate process control to align both waveguides. In this study, we used beam propagation method to simulate an integrated device composed of a laser diode and spot size converter (SSC). Two SSCs with different mode properties were combined with laser waveguide and optical coupling efficiency was simulated. The SSC with larger near field mode showed lower coupling efficiency, however its far field pattern was narrower and more symmetric. Tapered passive waveguide was utilized for enhancing the coupling efficiency and tolerance of waveguide offset at the butt joint without degrading the far field pattern. With this technique, high optical coupling efficiency of 89.6% with narrow far field divergence angle of 16°×16° was obtained.

• Journal of the Microelectronics and Packaging Society
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• v.29 no.2
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• pp.121-127
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• 2022

Micro-LED is a light-emitting diode smaller than 100 ㎛ in size. It attracts much attention due to its superior performance, such as resolution, brightness, etc., and is considered for various applications like flexible display and VR/AR. Micro-LED display requires a mass transfer process to move micro-LED chips from a LED wafer to a target substrate. In this study, we proposed a vacuum chuck method as a mass transfer technique. The vacuum chuck was fabricated with MEMS technology and PDMS micro-mold process. The spin-coating approach using a dam structure successfully controlled the PDMS mold's thickness. The vacuum test using solder balls instead of micro-LED confirmed the vacuum chuck method as a mass transfer technique.

• Journal of IKEEE
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• v.26 no.2
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• pp.205-210
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• 2022

We demonstrated roll-to-roll microcontact printed (mCP) microlens array (MLA) to enhance the light extraction of organic light emitting diodes (OLEDs). The commercially provided microlens array is used as a template for polydimethylsiloxane (PDMS) roll stamp. The fluorinated film is formed on the PDMS roll stamp from fluorinated ink with low boiling point and printed onto the bottom side of the organic light emitting diode without high pressure and high thermal treatment. With optimized concentration of ink, the pattern which is almost identical to that of the template MLA was successfully printed. Due to the structure and low optical absorbance of microcontact printed MLA, the external quantum efficiency of OLED was improved by about 18%.

• The Journal of the Korea institute of electronic communication sciences
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• v.18 no.4
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• pp.617-624
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• 2023

Recently, miniaturization and low power consumption of electronic products and improved efficiency and power factor improvement have become a matter of great interest. In this paper, an AC-DC converter based on PWM control was designed and made. The AC-DC converter is designed with a structure in which one rectifier circuit and one output voltage control circuit are connected in series. The rectifier circuit is a diode-based single phase full-wave current circuit and the output voltage control circuit is a DC-DC conversion circuit based on PWM control. Arduino was used as the main control device for PWM control, and LCD was configured at the output stage so that the control result could be checked. The error between the output voltage displayed on the oscilloscope and LCD and the target output voltage was confirmed through repeated experiments with the test circuit, and the validity of the proposed design methodology was confirmed by showing an error rate of about 5% based on the oscilloscope measurement value.

• Korean Journal of Materials Research
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• v.34 no.2
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• pp.111-115
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• 2024

Silicon carbide (SiC) has emerged as a promising material for next-generation power semiconductor materials, due to its high thermal conductivity and high critical electric field (~3 MV/cm) with a wide bandgap of 3.3 eV. This permits SiC devices to operate at lower on-resistance and higher breakdown voltage. However, to improve device performance, advanced research is still needed to reduce point defects in the SiC epitaxial layer. This work investigated the electrical characteristics and defect properties using DLTS analysis. Four deep level defects generated by the implantation process and during epitaxial layer growth were detected. Trap parameters such as energy level, capture-cross section, trap density were obtained from an Arrhenius plot. To investigate the impact of defects on the device, a 2D TCAD simulation was conducted using the same device structure, and the extracted defect parameters were added to confirm electrical characteristics. The degradation of device performance such as an increase in on-resistance by adding trap parameters was confirmed.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.19 no.6
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• pp.621-629
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• 2008

This paper presents a low temperature co-fire ceramics(LTCC) Upconverter for a Ka-band OBS satellite transponder in order for size reduction which is one of the most important requirement for satellite components. A S-band low-pass filter(LPF), a K-band band-pass filter(BPF), and an upconverting MMIC mixer are embedded in the multi-layer structure of the upconverter. All spurious can be selectively rejected by employing a modified Elliptic low pass filter with a multi-pole structure for the S-band LPF. Also an improved performance of out-of-band rejection can be obtained. At the K-band BPF design a layer coupled configuration is employed. The upconverting mixer is an MMIC diode mixer with a double-balanced configuration. Conversion loss and isolation of the upconverter are 9 dB and 51 dBc, respectively. The size of the LTCC upconverter is only $8{\times}7{\times}0.6mm^3$ which is one-third for the thin-film based upconverter.

• Journal of the Microelectronics and Packaging Society
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• v.15 no.2
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• pp.23-28
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• 2008

To improve the external quantum efficiency by means of the optimization of the polymer light emitting diodes(PLEDs) structure, the PLED with ITO/PEDOT:PSS/(PFO)/PFO:MEH-PPV/LiF/Al structure were fabricated and investigated the electrical and optical properties for the prepared devices. ITO(indium tin oxide) and PEDOT:PSS [poly (3,4-ethylenedioxythiophene): poly(styrene sulfolnate)] were used as transparent anode film and hole transport materials, respectively. PFO[poly(9,9-dioctylfluorene)] and MEHPPV[poly(2-methoxy-5(2-ethylhe xoxy)-1,4-phenylenevinyle)] were used as the light emitting host and dopant materials. The doping concentration of MEH-PPV was 9wt% with thickness of about $400{\AA}$. We investigated the dependence of the PFO thickness ranging from $200{\AA}$ to $300{\AA}$ on the electrical, optical properties of PLEDs. Among prepared PLED devices with different PFO thicknesses, the highest value of the luminance was obtained for the PLED device with $250{\AA}$ in thickness. As a result, the current density and luminance ware found to be about $400mA/cm^2$ and $1500cd/m^2$ at 13V, respectively. In addition, the luminance and current efficiency of PLED device with double emitting layer (PFO/PFO:MEH-PPV) were improved about 3 times compared with the one with single emitting layer (PFO:MEH-PPV).

• Korean Journal of Optics and Photonics
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• v.21 no.2
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• pp.61-68
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• 2010

Optical simulation methods were applied to the edge-lit LED backlight for LCD TV applications in order to optimize the optical structure of the light guide plate(LGP), and thus to improve the uniformity properties by removing the bright spots caused by LED's. The edge-lit LED backlight consisted of three white LED's with a lamp cover, a light guide plate, and a reflection film. When there was no pattern on the entrance side surface of the LGP, the illuminance uniformity was sensitively dependent on the distance d between the LED and the entrance surface. The illuminance uniformity increased with d but its increasing rate slowed down when d was beyond ~ 1.5 mm. When micro-patterns such as a lenticular lens array (LLA) or a serration pattern were formed on the entrance surface, the illuminance uniformity was improved substantially even for the case of very small d. At the same simulation condition, the lightguide with serration pattern showed a better uniformity than that with LLA pattern. Additional improvement could be achieved by changing the refractive index of the micro-patterns. These results suggest that using micro-patterns is a very effective way to reduce the bright spots due to their refracting function for the concentrated incident rays onto the LGP.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.37 no.2
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• pp.208-214
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• 2024

This reports the electrical properties of single-crystal β-gallium oxide (β-Ga₂O₃) vertical Schottky barrier diodes (SBDs) with a different guard ring structure. The vertical Schottky barrier diodes (V-SBDs) were fabricated with two types guard ring structures, one is with metal deposited on the Al₂O₃ passivation layer (film guard ring: FGR) and the other is with vias formed in the Al₂O₃ passivation layer to allow the metal to contact the Ga₂O₃ surface (metal guard ring: MGR). The forward current values of FGR and MGR V-SBD are 955 mA and 666 mA at 9 V, respectively, and the specific on-resistance (R_on,sp) is 5.9 mΩ·cm² and 29 mΩ·cm². The series resistance (R_s) in the nonlinear section extracted using Cheung's formula was 6 Ω, 4.8 Ω for FGR V-SBD, 10.7 Ω, 6.7 Ω for MGR V-SBD, respectively, and the breakdown voltage was 528 V for FGR V-SBD and 358 V for MGR V-SBD. Degradation of electrical characteristics of the MGR V-SBD can be attributed to the increased reverse leakage current caused by the guard ring structure, and it is expected that the electrical performance can be improved by preventing premature leakage current when an appropriate reverse voltage is applied to the guard ring area. On the other hand, FGR V-SBD shows overall better electrical properties than MGR V-SBD because Al₂O₃ was widely deposited on the Ga₂O₃ surface, which prevent leakage current on the Ga₂O₃ surface.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.222-222
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• 2012

Metal oxide gas sensors based on semiconductor type have attracted a great deal of attention due to their low cost, flexible production and simple usability. However, most works have been focused on n-type oxides, while the characteristics of p-type oxide gas sensors have been barely studied. An investigation on p-type oxides is very important in that the use of them makes possible the novel sensors such as p-n diode and tandem devices. Monoclinic cupric oxide (CuO) is p-type semiconductor with narrow band gap (~1.2 eV). This is composed of abundant, nontoxic elements on earth, and thus low-cost, environment-friendly devices can be realized. However, gas sensing properties of neat CuO were rarely explored and the mechanism still remains unclear. In this work, the neat CuO layers with highly ordered mesoporous structures were prepared by a template-free, one-pot solution-based method using novel ink solutions, formulated with copper formate tetrahydrate, hexylamine and ethyl cellulose. The shear viscosity of the formulated solutions was 5.79 Pa s at a shear rate of 1 s-1. The solutions were coated on SiO2/Si substrates by spin-coating (ink) and calcined for 1 h at the temperature of $200{\sim}600^{\circ}C$ in air. The surface and cross-sectional morphologies of the formed CuO layers were observed by a focused ion beam scanning electron microscopy (FIB-SEM) and porosity was determined by image analysis using simple computer-programming. XRD analysis showed phase evolutions of the layers, depending on the calcination temperature, and thermal decompositions of the neat precursor and the formulated ink were investigated by TGA and DSC. As a result, the formation of the porous structures was attributed to the vaporization of ethyl cellulose contained in the solutions. Mesoporous CuO, formed with the ink solution, consisted of grains and pores with nano-meter size. All of them were strongly dependent on calcination temperature. Sensing properties toward H2 and C2H5OH gases were examined as a function of operating temperature. High and fast responses toward H2 and C2H5OH gases were discussed in terms of crystallinity, nonstoichiometry and morphological factors such as porosity, grain size and surface-to-volume ratio. To our knowledge, the responses toward H2 and C2H5OH gases of these CuO gas sensors are comparable to previously reported values.