Journal of the Microelectronics and Packaging Society (마이크로전자및패키징학회지)
- Volume 15 Issue 2
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- Pages.23-28
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- 2008
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- 1226-9360(pISSN)
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- 2287-7525(eISSN)
Fabrication and Characterization of Polymer Light Emitting Diodes by Using PFO/PFO:MEH-PPV Double Emitting Layer
PFO/PFO:MEH-PPV 이중 발광층을 이용한 고분자 유기발광다이오드의 제작과 특성 연구
- Chang, Young-Chul (School of Mechatronics Engineering, Korea University of Technology and Education) ;
- Shin, Sang-Baie (Department of Electronics Engineering, Dankook University)
- Published : 2008.06.30
Abstract
To improve the external quantum efficiency by means of the optimization of the polymer light emitting diodes(PLEDs) structure, the PLED with ITO/PEDOT:PSS/(PFO)/PFO:MEH-PPV/LiF/Al structure were fabricated and investigated the electrical and optical properties for the prepared devices. ITO(indium tin oxide) and PEDOT:PSS [poly (3,4-ethylenedioxythiophene): poly(styrene sulfolnate)] were used as transparent anode film and hole transport materials, respectively. PFO[poly(9,9-dioctylfluorene)] and MEHPPV[poly(2-methoxy-5(2-ethylhe xoxy)-1,4-phenylenevinyle)] were used as the light emitting host and dopant materials. The doping concentration of MEH-PPV was 9wt% with thickness of about
최적 소자구조에 의한 고분자 발광다이오드의 외부 양자효율 향상을 위해 스핀코팅 방법으로 ITO/EDOT:PSS/(PFO)/PFO:MEH-PPV/LiF/Al 구조의 발광소자를 제작하고 전기, 광학적 특성을 조사하였다. ITO(indium tin oxide) 투명전극을 양극으로 사용하고 정공수송층으로 PEDOT:PSS[poly(3,4-ethylenedioxythiophene):poly(styrene sulfolnate)]를 사용하였으며, 발광물질로는 PFO[poly(9,9-dioctyl-fluorene)]와 MEH-PPV [poly(2-methoxy-5(2-ethylhexoxy)-1,4-phenylenevinyle)]를 각각 호스트와 도펀트로 사용하였다. PFO:MEH-PPV 발광층의 두께를 약
Keywords