• Maxillofacial Plastic and Reconstructive Surgery
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• v.30 no.6
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• pp.540-545
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• 2008

Since mid 20th century, dental treatments with laser have been introduced and improved a lot. Because early $CO_2$, Nd:YAG, diode, argon, and holmium lasers are used for dealing soft tissue, so it applied just limited field. But, in 1997 the lasers of erbium family that able to dealing soft and hard tissue also were introduced, laser application fields are enlarged. In today, the application fields reach on implantation treatment, so clinicians can use the laser to make holes for implantation, and flap elevation, even though treating peri-implantitis. So our class want to discover the optimal setting of Er:YAG laser when treating peri-implantitis. We observed the surface that initially treated by RBM and TPS passion and laser with varied options of exposure time and power with SEM image. For this we conclude the optimal setting range that does not alter the implant surface structure and report it.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.46 no.6
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• pp.52-57
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• 2009

This paper presents a low-noise low-dropout linear regulator that is suitable for on-chip integration with RF transceiver ICs. In the bandgap reference, a stacked diode structure is adopted for saving silicon area as well as maintaining low output noise characteristic. Theoretical analysis for supporting the approach is also described. The linear regulator is fabricated in $0.18{\mu}m$ CMOS process. It operates with an input voltage range of 2.2 V - 5 V and provide the output voltage of 1.8 V and the output current up to 90 mA. The measured line and load regulation is 0.04%/V and 0.46%, respectively. The output noise voltage is measured to be 479 nV/$^\surd{Hz}$ and 186 nV/$^\surd{Hz}$ from 100 Hz and 1 kHz offset, respectively.

• Journal of Information Display
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• v.4 no.2
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• pp.13-18
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• 2003

We synthesized bis (2-methyl-8-quinolinolato)(triphenylsiloxy) aluminum (III) (SAlq), a blue-emitting material having a high luminous efficiency, through a homogeneous-phase reaction. The photoluminescence (PL) and electroluminescence (EL) spectra of SAlq show two peaks at 454 nm and 477 nm. Efficient white light-emitting devices are fabricated by doping SAlq with a red fluorescent dye of 4-dicyanomethylene-2-methyl-6-{2-(2,3,6,7-tetrahydro-1H,5H-benzo[i,j]quinolizin-8yl) vinyl}-4H-pyran (DCM2). The incomplete energy transfer from blue-emitting SAlq to red-emitting DCM2 results in light-emission of both blue and orange colors. Devices with the structure of ITO/TPD (50 nm)/SAlq:DCM2 (30 nm, 0.5 %)/$Alq_3$ (20 nm)/LiF (0.5 nmj/Al show EL peaks at 456 nm and 482 nm originating from SAlq and at 570 nm from DCM2, resulting in the Commission Internationale d'Eclairage (CIE) chromaticity coordinates of (0.32, 0.37). The device exhibits an external quantum efficiency of about 2.3 % and a luminous efficiency of about 2.41m/W at 100 $cd/m^2$. A maximum luminance of about 23,800 $cd/m^2$ is obtained at the bias voltage of 15 V.

• KIEE International Transactions on Electrophysics and Applications
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• v.11C no.3
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• pp.70-74
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• 2001

Admittance or impedance spectroscopy is one of the powerful tools to study dielectric relaxation and loss processes in organic and inorganic materials. In this study, the frequency dependent properties of an indium tin oxide/tris(8-hydroxyquinoline) aluminum($Alq_3$)/aluminum structure have been studied. The conductance of the $Alq_3$ film increases with the DC applied voltage up to 4V and decreases above 4V in the low frequency region. This indicates that the resistance of the device decreases with the applied bias due to the carrier injection enhancement, thereafter the injected carriers form the space charge and the additional injection of carriers is prevented. The Cole-Cole plot of the admittance takes a one-semicircle shape, which means that the device can be modeled as a parallel resistor-capacitor network. The resistance and capacitance were estimated as 8.62k${\Omega}$ and 2.7nF, respectively, at 3V in the low frequency region. The dielectric constant ( ${\epsilon}'$ ) of the $Alq_3$ film is independent of the frequency in the low frequency region below 100kHz, while the frequency dependency was observed at above 100kHz. The dielectric loss factor ( ${\epsilon}"$ ) of the $Alq_3$ film shows the dielectric dispersion below 100kHz and dielectric absorption in higher frequency domain. The dispersion is thought to be related to the hopping process of the carriers. The ${\epsilon}"$ is proportional to the reciprocal of the frequency. The dielectric relaxation time was extracted to about 0.318${\mu}s$ from the dielectric absorption spectrum.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.15 no.1
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• pp.44-50
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• 2004

In this paper, a DBM(Doubly Balanced Mixer) of 2 GHz is implemented on FR4 substrate. The structure of doubly balanced mixer requires, in general, two batons and a quad diode. For balun, a novel planar balun using microstrip to CPS is suggested and designed. The suggested balun shows the phase imbalance of 180$^{\circ}$${\pm}$ 1.5$^{\circ}$and the amplitude imbalance of ${\pm}$ 0.2 ㏈ for 1.5 to 2.5 GHz. Using the balun, DBM is succesfully implemented, and the measured conversion loss of up/down converter show about 6 ㏈ over the bandwidth. The balun may be applicable for MMIC DBM with the process supporting backside via thourgh more study.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.16 no.5
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• pp.1023-1028
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• 2012

A MMIC (Monolithic Microwave Integrated Circuit) mixer chip using the Schottky diode of an GaAs p-HEMT process has been developed for the I/Q demodulator of non-contact near field microwave probing system. A single balanced mixer type is adopted to achieve simple structure of the I/Q demodulator. A quadrature hybrid coupler and a quarter wavelength transmission line for 180 degree hybrid are realized with lumped elements of MIM capacitor and spiral inductor to reduce the mixer chip size. According to the on-wafer measurement, this MMIC mixer covers RF and LO frequencies of 1650MHz to 2050MHz with flat conversion loss. The MMIC mixer with miniature size of $2.5mm{\times}1.7mm$ demonstrates conversion loss below 12dB for both variations of RF and LO frequencies, LO-to-IF isolation above 43dB and RF-to-IF isolation above 23dB, respectively.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.26 no.7
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• pp.539-544
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• 2013

To study the encapsulation method for heat dissipation of high brightness organic light emitting diode (OLED), red emitting OLED of ITO (150 nm) / 2-TNATA (50 nm) / NPB (30 nm) / $Alq_3$ : 1 vol.% Rubrene (30 nm) / $Alq_3$ (30 nm) / LiF (0.7 nm) / Al (200 nm) structure was fabricated, which on $Alq_3$ (150 nm) / LiF (150 nm) as buffer layer and Al as protective layer was deposited to protect the damage of OLED, and subsequently it was encapsulated using attaching film and metal sheet. The current density, luminance and power efficiency was improved according to thickness of Al protective layer. The emission spectrum and the Commission International de L'Eclairage (CIE) coordinate did not have any effects on encapsulation process using attaching film and metal sheet The lifetime of encapsulated OLED using attaching film and metal sheet was 307 hours in 1,200 nm Al thickness, which was increased according to thickness of Al protective layer, and was improved 7% compared with 287 hours, lifetime of encapsulated OLED using attaching film and flat glass. As a result, it showed the improved current density, luminance, power efficiency and the long lifetime, because the encapsulation method using attaching film and metal sheet could radiate the heat on OLED effectively.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.10
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• pp.817-821
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• 2011

We have proposed an optical thin film and micro lens to improve the luminance of organic light emitting device. The first method, optical thin film was calculated refractive index of dielectric layer material that was modulated refractive index of organic material, ITO (indium tin oxide)and glass. The second method, microlens was applied with lenses on the organic device. Optical thin films were designed with Macleod Simulator and Micro Lenses were calculated by FDTD (finite-difference time-domain) solution. The structure of thin film was designed in organic material/ITO/dielectric layer/glass. The lenses size, height and distance were 5 ${\mu}m$, 1 ${\mu}m$, 1 ${\mu}m$, respectively. The material of micro lenses used silicon dioxide. Result, The highest luminance of OLED which applied with microlens was 11,185 $cd/m^2$, when approval voltage was 14.5 V, applied thin film was 5,857 $cd/m^2$. The device efficiency applying microlens increased 3 times than the device which does not apply microlens.

• Journal of Korean Tunnelling and Underground Space Association
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• v.23 no.5
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• pp.315-323
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• 2021

Tunnel is the most energy-consuming structure in road due to the characteristic of using artificial lighting during day and night. Therefore, tunnel lights are being replaced by LED lamp that have advantages with respect to low power consumption. The best use of social overhead capital can be expected by considering the life cycle cost, because to tunnel structures are accompanied by a series of medium-to-long-term and continuous processes of replacing auxiliary facilities. In this study, the saving effect by LCC analysis was quantitatively analyzed by replacing tunnel light sources from high-pressure sodium lamps to LED lamps. The effect of reducing the replacement cycle by increasing the life of the lamps and the resulting maintenance cost is very significant, on replacing tunnel lighting light sources with LED lamp.

• Journal of the Korean Society of Marine Environment & Safety
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• v.25 no.4
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• pp.498-503
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• 2019

Electric propulsion ships are gaining widespread interest in the marine industry owing to extreme air pollution concerns. Consequently, several studies are actively being conducted for improving the power quality. Various methods have been developed that incorporate passive filters, notch filters, and active filters for reducing the harmonic content in the input current of a conventional diode front end rectifier. Among such filters, the active front end (AFE) rectifier is considered as an excellent technology. In this paper, current control for an AFE rectifier employing space vector PWM (Pulse Width Modulation) is proposed. Conventional current control methods for the AFE rectifier, hysteresis, SPWM (Sinusoidal Pulse Width Modulation), and SVPWM (Space Vector Pulse Width Modulation) were simulated by employing the PSIM software tool for analysis and comparisons. The results corroborate that SVPWM has the simplest structure and provides the best performance.