• 제목/요약/키워드: diode structure

검색결과 621건 처리시간 0.03초

Genetic and biochemical evidence for redundant pathways leading to mycosporine-like amino acid biosynthesis in the cyanobacterium Sphaerospermopsis torques-reginae ITEP-024

  • Geraldes, Vanessa;de Medeiros, Livia Soman;Lima, Stella T.;Alvarenga, Danillo Oliveira;Gacesa, Ranko;Long, Paul F.;Fiore, Marli Fatima;Pinto, Ernani
    • ALGAE
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    • 제35권2호
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    • pp.177-187
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    • 2020
  • Cyanobacteria have been widely reported to produce a variety of UV-absorbing mycosporine-like amino acids (MAAs). Herein, we reported production of the unusual MAA, mycosporine-glycine-alanine (MGA) in the cyanobacterium Sphaerospermopsis torques-reginae ITEP-024 using a newly developed UHPLC-DAD-MS/HRMS (ultra-high performance liquid chromatography-diode array detection-high resolution tandem mass spectrometry) method. MGA had previously been first identified in a red-algae, but S. torques-reginae strain ITEP-024 is the first cyanobacteria to be reported as an MGA producer. Herein, the chemical structure of MGA is fully elucidated from one-dimensional / two-dimensional nuclear magnetic resonance and HRMS data analyses. MAAs are unusually produced constitutively in S. torques-reginae ITEP-024, and this production was further enhanced following UV-irradiance. It has been proposed that MAA biosynthesis proceeds in cyanobacteria from the pentose phosphate pathway intermediate sedoheptulose 7-phosphate. Annotation of a gene cluster encoded in the genome sequence of S. torques-reginae ITEP-024 supports these gene products could catalyse the biosynthesis of MAAs. However, addition of glyphosate to cultures of S. torques-reginae ITEP-024 abolished constitutive and ultra-violet radiation induced production of MGA, shinorine and porphyra-334. This finding supports involvement of the shikimic acid pathway in the biosynthesis of MAAs by this species.

Inverted CdSe/ZnS Quantum Dots Light-Emitting Diode Using Low-Work Function Organic Material Polythylenimine Ethoylated

  • Kim, HongHee;Son, DongIck;Jin, ChangKyu;Hwang, DoKyung;Yoo, Tae-Hee;Park, CheolMin;Choi, Won Kook
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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    • pp.246.1-246.1
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    • 2014
  • Over the past several years, colloidal core/shell type quantum dots lighting-emitting diodes (QDLEDs) have been extensively studied and developed for the future of optoelectronic applications. In the work, we fabricate an inverted CdSe/ZnS quantum dot (QD) based light-emitting diodes (QDLED). In order to reduce work function of indium tin oxide (ITO) electrode for inverted structure, a very thin (<10 nm) polyethylenimine ethoxylated (PEIE) is used as surface modifier[1] instead of conventional metal oxide electron injection layer. The PEIE layer substantially reduces the work function of ITO electrodes which is estimated to be 3.08 eV by ultraviolet photoemission spectroscopy (UPS). From transmission electron microscopy (TEM) study, CdSe/ZnS QDs are uniformly distributed and formed by a monolayer on PEIE layer. In this inverted QDLEDs, blend of poly (9,9-di-n-octyl-fluorene-alt-benzothiadiazolo) and poly(N,N'-bis(4-butylphenyl)-N,N'-bis(phenyl)benzidine] are used as hole transporting layer (HTL) to improve hole transporting property. At the operating voltage of 8 V, the QDLED device emitted spectrally orange color lights with high luminance up to 2450 cd/m2, and showed current efficacy of 0.6 cd/A, respectively.

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싱글칩 마이크로컨트롤러를 이용한 고효율 공진형 플라이백 전력변환기 (High Efficiency Resonant Flyback Converter using a Single-Chip Microcontroller)

  • 정강률
    • 전기전자학회논문지
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    • 제24권3호
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    • pp.803-813
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    • 2020
  • 본 논문에서는 싱글칩 마이크로컨트롤러를 이용한 고효율 공진형 플라이백 전력변환기를 제안한다. 제안한 전력변환기의 1차측은 하프브리지의 전력구조에 비대칭펄스폭변조(APWM : Asymmetrical Pulse-Width Modulation)을 적용하여 공진형 스위칭을 수행한다. 그리고 2차측은 다이오드 플라이백정류기 전력구조를 이용하고 영전류스위칭(ZCS : Zero Current Switching)으로 동작한다. 그리하여 제안한 컨버터는 고효율을 달성한다. 제안한 컨버터는 제어와 구동을 위하여 싱글칩 마이크로컨트롤러와 부트스랩 회로를 각각 이용하므로 전체적 구조가 매우 간단하다. 본 논문에서는 먼저, 제안한 전력변환기의 전력회로의 동작을 동작모드 별로 설명하고 정상상태 해석을 보인다. 그리고 제안한 전력변환기를 동작시키는 소프트웨어 제어 알고리즘과 구동회로에 관하여 설명하며, 그 후 각 설명에 근거하여 제작된 프로토타입의 실험결과를 통하여 제안한 전력변환기의 동작 특성을 보인다.

평면형 구조의 분리형 링 공진기를 이용한 전압제어 발진기 구현 (Implementation of Voltage Controlled Oscillator Using Planar Structure Split Ring Resonator (SRR))

  • 김기래
    • 한국정보통신학회논문지
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    • 제17권7호
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    • pp.1538-1543
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    • 2013
  • 평면형 마이크로스트립 공진기를 이용한 고주파 발진기의 단점인 위상잡음 특성을 개선하기 위해 본 논문에서는 분리형 링 공진기를 제안하였다. 제안된 공진기를 이용하여 위상잡음 특성 개선 효과를 나타내기 위해 발진기를 설계하여, 5.8GHz 기본 주파수에서 7.22dBm의 출력과 -83.5 dBc@100kHz의 위상잡음 특성을 나타내었다. 이것은 ${\lambda}/4$ 마이크로스트립 공진기를 이용한 발진기와 비교하여 위상잡음 특성이 9.7dB 정도 개선되었다. 다음은 제안된 공진기에 버랙터다이오드를 추가하여 전압제어발진기를 구현하였다. 발진기의 특성은 최소 5.833 GHz에서 최대 5.845 GHz 까지 125 MHz 정도의 튜닝범위를 가지고, -118~-115.5 dBc/Hz@100 KHz의 위상잡음 특성을 갖는다. 본 논문의 발진기는 평면형 구조로 쉬운 작업공정과 소형화 특성 때문에 MIC 또는 MMIC 분야의 설계에 응용될 수 있을 것이다.

Rubrene/GDl 4234 Dual 도펀트를 이용한 적색 유기발광다이오드 (Red Organic LED with Dual Dopants of Rubrene and GDI 4234)

  • 장지근;강의정;김희원;신세진;공명선;임성규;오명환
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2005년도 추계학술대회 논문집 Vol.18
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    • pp.309-310
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    • 2005
  • In the fabrication of high performance red organic light emitting diode, 2-TNA TA [4,4',4" -tris (2-naphthylphenyl- phenylamino)-triphenylamine] as hole injection material and N PH [N,N'-bis (1-naphthyl) -N,N' -diphenyl-1, 1'-biphenyl-4,4'- diamine] as hole transport material were deposited on the ITO (indium tin oxide)/glass substrate by vacuum evaporation, And then, red color emission layer was deposited using Alq3 as a host material and Rubrene (5,6,11,12- tetraphenylnaphthacene) and GDI 4234 as dopants. Finally, small molecular weight OLED with the structure of ITO/2-TNATA/ NPB/Alq3+Rubrene+GDI4234/Alq3/LiF/Al was obtained by in-situ deposition of Alq3, LiF and Al as electron transport material, electron injection material and cathode. respectively. Green OLED fabricated in our experiments showed the color coordinate of CIE(0.65,0.35) and the maximum luminescence efficiency of 2.1 lm/W at 7 V with the peak emission wavelength of 632 nm.

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AISI M2 파우더를 이용한 레이저 메탈 디포지션의 트랙 특성 분석 (The Characteristics Analysis of Track of Laser Metal Deposition Using AISI M2 Powder)

  • 김원혁;송명환;박인덕;강대민
    • 한국자동차공학회논문집
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    • 제24권4호
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    • pp.463-470
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    • 2016
  • In this paper, the characteristics analysis of LMD track, such as including track structure, track wear resistance and track thickness, were analyzed to enhance the deposition efficiency using a diode-pumped disk laser. SKD61 hot work steel plate and Fe based AISI M2 alloy were used as a the substrate and powder for the LMD process, respectively. The laser power, track pitch and powder feed rate among LMD parameters were adopted to estimate the deposition efficiency. As the laser power is increased, heat input and melting pool on the substrate is grown also increases, so resulting in the increased LMD track thickness was increased. Through EPMA mapping analysis of the cross-section in the LMD track, it was observed that all the elements are evenly distributed inside. Therefore, the entire hardness in the LMD track is expected to be almost uniform regardless of location. The characteristics of the LMD specimen were excellent compared to the STD11 specimen in terms of the wear track width and the wear rate as well as the coefficient of friction. Especially the wear rate of LMD specimen has been significantly reduced by 60 % or more. From Based on the experimental results, the prediction formula of LMD thickness was calculated by using laser power, track pitch and powder feed rate.

The Role of (111)MgO Underlayer in Growth of c-axis Oriented Barium Ferrite Films

  • Erickson, D.W.;Hong, Y.K.;Gee, S.H.;Tanaka, T.;Park, M.H.;Nam, I.T.
    • Journal of Magnetics
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    • 제9권4호
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    • pp.116-120
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    • 2004
  • Hexagonal barium-ferrite ($BaFe_{12}O_{19}$, magnetoplumbite structure; BaM) film with perpendicularly c-axis orientation was successfully deposited on (100) silicon substrates with an MgO (111) underlayer by rf diode sputtering and in-situ heating at $920^{\circ}C$. The magnetic and structural properties of 0.27 ${\mu}m$ thick BaM films on MgO (111) underlayers were compared to films of the same thickness deposited onto single-crystal MgO (111) and c-plane ($000{\ell}$) sapphire ($Al_2O_3$) substrates by vibrating sample magnetometry (VSM), x-ray diffractometer (XRD), and atomic force microscopy (AFM). The thickness dependence of MgO (111) underlayers on silicon wafer was found to have a large effect on both magnetic and structural properties of the BaM film. The thickness of 15 nm MgO (111) underlayers produced BaM films with almost identical magnetic and structural properties as the single-crystal substrates; this can be explained by the lower surface roughness for thinner underlayer thicknesses. The magnetization saturation ($M_s$) and the ratio $H_{cII}/H_{c{\bot}}$ for the BaM film with a 15 nm MgO (111) underlayer is 217 emu/cc and 0.24, respectively. This is similar to the results for the BaM films deposited on the single-crystal MgO (111) and sapphire substrates of 197 emu/cc and 0.10, 200 emu/cc and 0.12, respectively. Therefore, the proposed MgO (111) underlayer can be used in many applications to promote c-axis orientation without the cost of expensive substrates.

Improved antimicrobial effect of ginseng extract by heat transformation

  • Xue, Peng;Yao, Yang;Yang, Xiu-shi;Feng, Jia;Ren, Gui-xing
    • Journal of Ginseng Research
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    • 제41권2호
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    • pp.180-187
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    • 2017
  • Background: The incidence of halitosis has a prevalence of 22-50% throughout the world and is generally caused by anaerobic oral microorganisms, such as Fusobacterium nucleatum, Clostridium perfringens, and Porphyromonas gingivalis. Previous investigations on the structure-activity relationships of ginsenosides have led to contrasting results. Particularly, the antibacterial activity of less polar ginsenosides against halitosis-related bacteria has not been reported. Methods: Crude saponins extracted from the Panax quinquefolius leaf-stem (AGS) were treated at $130^{\circ}C$ for 3 h to obtain heat-transformed saponins (HTS). Five ginsenoside-enriched fractions (HTS-1, HTS-2, HTS-3, HTS-4, and HTS-5) and less polar ginsenosides were separated by HP-20 resin absorption and HPLC, and the antimicrobial activity and mechanism were investigated. Results: HPLC with diode-array detection analysis revealed that heat treatment induced an extensive conversion of polar ginsenosides (-Rg1/Re, -Rc, -Rb2, and -Rd) to less polar compounds (-Rg2, -Rg3, -Rg6, -F4, -Rg5, and -Rk1). The antimicrobial assays showed that HTS, HTS-3, and HTS-4 were effective at inhibiting the growth of F. nucleatum, C. perfringens, and P. gingivalis. Ginsenosides-Rg5 showed the best antimicrobial activity against the three bacteria, with the lowest values of minimum inhibitory concentration and minimum bactericidal concentration. One major reason for this result is that less polar ginsenosides can more easily damage membrane integrity. Conclusion: The results indicated that the less polar ginsenoside-enriched fraction from heat transformation can be used as an antibacterial agent to control halitosis.

모서리가 잘린(Corner-cut) 구조를 가진 정삼각형 마이크로스트립 안테나와 편파 변환 재구성 안테나로의 응용 (A Corner-Truncated Equilateral-Triangular Microstrip Antenna and Its Applications for Reconfigurable Antennas with Polarization Diversity)

  • 성영제
    • 한국전자파학회논문지
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    • 제19권10호
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    • pp.1159-1165
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    • 2008
  • 본 논문에서는 다양한 방사 편파를 얻기 위하여 모서리가 잘린 정삼각형 마이크로스트립 안테나를 제안하였다. 제안한 안테나는 삼각형 패치의 빗변과 평행하게 놓여진 마이크로스트립 라인에 의해 급전된다. 동일한 크기를 갖는 삼각형 모서리의 제거 여부에 따라 정삼각형 마이크로스트립 안테나는 선형 편파, 왼손 원형 편파, 오른손 원형 편파 특성을 나타내었다. 이러한 특성을 바탕으로 정삼각형 마이크로스트립 안테나를 편파 변환이 가능한 재구성 안테나로 응용하였다. 정삼각형 패치와 작은 삼각형 기생 패치 사이에 PIN 다이오드를 적용하였다. 다이오드에 인가되는 바이어스 전압에 따라 안테나는 선형 편파 또는 오른손 원형 편파 특성을 나타내었다. 측정된 방사 패턴 결과를 통해 선형 편파의 경우 낮은 크로스폴을, 원형 편파의 경우 좋은 축비 특성을 나타냄을 알 수 있었다.

InGaN/Sapphire LED에서 기판 제거 유무와 칩 마운트 타입이 광출력 특성에 미치는 영향 (Analysis of the Effect of the Substrate Removal and Chip-Mount Type on Light Output Characteristics in InGaN/Sapphire LEDs)

  • 홍대운;유재근;김종만;윤명중;이성재
    • 한국광학회지
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    • 제19권5호
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    • pp.381-385
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    • 2008
  • InGaN/Sapphire LED에서 기판 제거와 패키지 방식이 광출력 특성에 미치는 영향을 분석하였다. Sapphire 기판의 제거는 반도체 접합에서 발생된 열의 방출에 도움이 되지만, 반대로 광추출효율이 손상되는 문제점이 수반된다. Sapphire 기판이 제거된 칩을 열전도율이 좋은 금속의 마운트 위에 부착하면, 최대 구동전류는 현저히 증가하고 광출력도 상당히 증가됨으로써, 광추출효율이 손상되는 문제점이 어느 정도 보상된다. 하지만, sapphire 기판이 제거된 칩을 상대적으로 열전도율이 낮은 유전체의 마운트 위에 부착하는 경우에는, 거의 모든 입력전류 범위에서 sapphire 기판이 남아 있는 일반형 칩보다 낮은 광출력을 나타낸다. 따라서, 작은 광출력이 요구되는 응용분야에서는 사용된 칩 마운트의 종류에 무관하게, 일반형 칩이 sapphire 기판이 제거된 칩 보다 유리한 것으로 분석된다.