• Transactions of the Society of Information Storage Systems
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• v.10 no.2
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• pp.32-38
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• 2014

Heat emission from the laser diode used in the optical disc drive and the defects from the increased temperature at the system have attracted attentions from the field of the information storage device. Thermoelectric refrigerator is one of the fine solutions to solve these thermal problems. The refrigeration performance of thermoelectric device is dependent on the thermoelectric material's figure-of-merit. Meanwhile, high electrical contact resistivity between metal electrode and p- and n-type thermoelectric materials in the device would lead increased total electrical resistance resulting in the degeneracy in performance. This paper represents the manufacturing process of the PbTe-based material which has one of the highest figure-of-merit at medium-high-temperature, ~ 600K to 900 K, and the nickel contact layer for reduced electrical contact resistance at once, and the results showing the decent contact structure and figure-of-merit even after the long-term operation environment.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.6
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• pp.592-597
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• 2004

Porous silicon(PS) has received much attention as a sensitive material of chemical sensors because of its large internal surface area. In this work, we fabricated gas-sensing devices based on the porous silicon layer which could be applicable to the measurement of blood alcohol content(BAC), and estimated their electrical properties. The structure of the sensor is similar to an MIS (metal-insulator-semiconductor) diode and consists of thin Au/oxidized PS/PS/p-Si/Al, where the p-Si substrate is etched anisotropically to reduce the thickness. We measured C-V curves from two types of the samples with the PS layer treated by the different anodization current density of 60 or 100 mA/cm$^2$, in order to compare the sensitivity. As a result, the magnitude and variation of capacitances from the devices with the PS formed under the current density of 100 mA/cm$^2$ were found to be more detectable due to the larger internal surface.

• Proceedings of the KIEE Conference
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• 2006.07c
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• pp.1735-1736
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• 2006

As developing the information society, Lighting Emitted diode(LED) which is light source for illumination of next generation is attracted public attention. LED have many problem as narrow light view angle, high price, drift phenomenon of color coordinate, high heating problem for lower power, lower weight and small size. So, many researches have continued in a illumination as LED module type. in this problem, heating problem is very important and difficult and that is caused in decreasing phenomenon of brightness and drift phenomenon of color coordinate. so the problem of heating is urgent question for illumination of LED. In this paper, structural design of PCB changed as two type for solving the heating problem. also the properties of heating is analysed and optical properties is measured with heating image camera and spectrometer according to change in this design.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.8
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• pp.664-668
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• 2011

In this study, we have fabricated the red OLED (organic light emitting diode). The basic device structure is ITO/hole transporting layer, TPD(500 $\AA$)/red emitting layer, Alq3 doped with DCM2:rubrene(20 $\AA$)/electron transporting layer, Alq3(M) (500 $\AA$-M $\AA$)/LiF(15 $\AA$)/Al(1,000 $\AA$). The thickness of electron transporting layer(500 $\AA$-M $\AA$) changed 0, 20, 40, 60 $\AA$. Turn on voltage of the red OLED was 5 V, 6 V, 6.5 V and 7.5 V, respectively with electron transfer layer changed ratio. Luminance of red OLED was 4,504, 1,840, 1,490 and 1,130 cd/$m^2$, respectively. Optimized electron transfer layer position changed ratio of the red OLED was 0 $\AA$.

• Proceedings of the KIEE Conference
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• 2007.11a
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• pp.132-133
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• 2007

$In_xGa_{1-x}N/In_yGa_{1-y}N$ 다중 양자우물 녹색 발광 다이오드에 2차원 광자 결정을 이용하여 음극선 발광의 향상을 관찰 하였다. 정사각형 배열의 2차원 광자 결정의 주기와 격자 상수는 200/500 nm 이고 전자빔 리소그래피로 광자결정 패턴을 제작한 후, 플라즈마 건식 식각법으로 패턴을 구현하였다. 식각 시간의 차이를 둔 구현된 패턴의 홀 깊이는, 각각 ${\sim}69nm,\;{\sim}99nm,\;{\sim}173nm$ 이었다. 전계 방사 주사 현미경 측정 결과, 형성된 홀은 끝이 잘린 역전된 원뿔 모양으로 식각 되었다. 식각 된 홀의 깊이에 따라 광자 결정이 있는 부분이 없는 부분보다 최대 ${\sim}30$배 많은 광자가 검출 됨을 확인하였다.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.63 no.10
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• pp.1402-1411
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• 2014

In this paper, the Maximum Power Point Tracking(MPPT) control of the small scale wind power generation system with a three-phase diode rectifier and the grid-connected inverter is studied. Without the need for the converter circuits to control speed of the generator, it is economical and the structure is simple. Compared with existing systems, it can be to reduce the power semiconductor switches and passive elements, and to implement the MPPT control with only DC-Link voltage control of the grid-connected inverter. In order to allow MPPT control without the characteristic information of the wind turbine, the P&O algorithm is applied, and these are verified by the simulation and experiment.

• Proceedings of the Korean Institute of IIIuminating and Electrical Installation Engineers Conference
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• 2006.05a
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• pp.31-34
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• 2006

The characteristic of carbon nano fiber (CNF) as electron emitters was described. Carbon nano fiber (CNF) of herringbone was prepared by thermal chemical vapor deposition(CVD), mixed with binders and conductive materials, and then were formed by screen-printing process. In order to increase effectively field emissions, the surface treatment of rubbing & peel-off was applied to the printed CNF emitters on cathode electrode. The measurements of field emission properties were carried out by using a diode structure inline vacuum chamber. CNF of herringbone type showed good emission properties that a turn on field was as low as $2.5V/{\mu}m$ and current density was as large as $0.15mA/cm^2$ of $4.5V/{\mu}m$ with electric field. After the vacuum packaged panel of 5-inch in diagonal, the measured white brightness was as high as $7000cd/m^2$ at 1900V of anode and 700V of gate voltage.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.27 no.3
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• pp.55-64
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• 2013

In this paper, a new topology which can add a small reactor in series to a condenser-bank type reactive power compensator to limit current is proposed. And also the proposed topology can add or remove a power condenser safely without any addition of inrush-current suppression resistance. The proposed method tests variable resistance of the drain source of a switching device which is controlled by gate voltage in a two-way switch with a diode rectifier and FET switch. In other words, the proposed method is a inrush-current suppression method with the structure of variable resistance. In particular, the proposed method creates smooth current without any resonance in inrush-current as well as is not limited by the time of switch on and off.

• 한국정보통신설비학회:학술대회논문집
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• 2008.08a
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• pp.441-446
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• 2008

In this papers, a PLDRO(Phase Locked Dielectric Resonator Oscillator) is designed and implemented at the oscillator in which fundamental frequency is 18.3 GHz. The proposed PLDRO so as to improve the PLDRO of the general structure is designed to the goal of the minimize of the size and the performance improvement. Three VCO(Voltage controlled Oscillator) and the power combiner improved the output power. A VCDRO(Voltage Controlled Dielectric Resonator Oscillator) is manufactured using a varactor diode to tune oscillating frequency electrically, and its phase is locked to reference frequency by SPD(Sampling Phase Detector). This product is fabricated on Teflon substrate with dielectric constant 2.2 and device is ATF -13786 of Ka-band using. This PLDRO generates an output power of 5.67 dBm at 18.3 GHz and has the characteristics of a phase noise of -80.10 dBc/Hz at 1 kHz offset frequency from carrier, the second harmonic suppression of -33 dBc. The proposed PLDRO can be used in Ka-band satellite applications

• Journal of the Korea Institute of Information and Communication Engineering
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• v.8 no.2
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• pp.227-231
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• 2004

A MMIC (Monolithic Microwave Integrated Circuit) mixer chip using the schottky diode of InGaAs/CaAs p-HEMT process has been developed for receiver down converter of Ka-band. A different approach of MMIC mixer structure is applied for reducing the chip size by the exchange of ports between IF and LO. This MMIC covers with RF (30.6∼31.0㎓)and IF (20.8∼21.2㎓). According to the on-wafer measurement, the MMIC mixer with miniature size of 3.0mm1.5mm demonstrates conversion loss below 7.8㏈, LO-to-RF isolation above 27㏈, LO-to-IF isolation above 19㏈ and RF-to-IF isolation above 39㏈, respectively.