• Journal of the Korean Institute of Telematics and Electronics D
• /
• v.34D no.4
• /
• pp.27-32
• /
• 1997

In resonant tunneling diodes with the quantum well structure showing the negative differential resistance (NDR), it is essential to increase both the peak-to-valley current ratio (PVCR) and the peak current desnity ( $J_{p}$) for the accurate digital switching operation and the high output of the device. In this work, a resonant interband tunneling diode (RITD) with single quantum well structure, which is composed of I $n_{0.47}$As/I $n_{0.52}$A $l_{0.48}$As heterojunction on the InP substrate, is fabricated ot improve PVCR and JP, and then the dependence of I-V charcteristics on the width of the quantum well was investigated.d.ted.d.

• Proceedings of the KIEE Conference
• /
• 1996.07c
• /
• pp.1456-1458
• /
• 1996

In resonant tunneling diodes with the quantum well structure showing the negative differential resistance (NDR), it is essential to increase both the peak-to-valley current ratio (PVCR) and the peak current density ($J_p$) for the accurate switching operation and the high output of the device. In this work, a resonant interband tunneling diode (RITD) with single quantum well structure, which is composed of $In_{0.53}Ga_{0.47}As/ln_{0.52}Al_{0.48}As$ heterojunction on the InP substrate, is suggested to improve the PVCR and $J_p$ through the narrowed tunnel barriers. As the result, the measured I-V curves showed the PVCR over 60.

• Transactions on Electrical and Electronic Materials
• /
• v.3 no.4
• /
• pp.32-35
• /
• 2002

In this work, we test electrode material of TFD (Thin Film Diode) device subject to flexible substrate. Al, that is ductile metal, was proper for flexible electrode to fabricate flexible display. The fabricated devices had symmetric electrode structure on both sides of insulation layer. The electrode was made of ductile Al so as to reduce the mismatch of properties between the electrode and substrate. The TFD device was successfully fabricated applying our own etch-free process. Electrical properties were improved by post-annealing.

• Journal of the Korean Institute of Telematics and Electronics A
• /
• v.29A no.7
• /
• pp.56-63
• /
• 1992

A measurement technique of the surface generation velocity S$_o$ using the BC(buried channel) MOS structure with shallow and low doped channel layer (BC MOS S$_o$ measurement technique) is presented and verified analytically and experimentally. Using this measurement technique, S$_o$ can be measured more accurately than that measured using the gate-controlled diode SS1oT measurement technique. When S$_o$ is measured for the two techniques from a BC MOS structure test patten with gate length of 171$\mu$m, the results are 0,66cm/sec and 0.28cm/sec for the former and the latter respectively.

• The Transactions of the Korean Institute of Electrical Engineers B
• /
• v.48 no.8
• /
• pp.391-399
• /
• 1999

We have designed the backward wave oscillator, a power-pulsed generator oscillated at 20 GHz has higher frequency than current one. An absolute instability linear analysis was used for the purpose of designing the slow wave structure. A large diameter (D/$\lambda$=4.8) of the slow wave structure was adopted to prevent the breakdown brought about by the increase of power density. We have fabricated a marx generator, pulse forming line and diode. And the development of a compact pulsed power generator with short period and low amplitude is expected.

• Journal of the Korea Institute of Military Science and Technology
• /
• v.17 no.3
• /
• pp.311-317
• /
• 2014

In this paper, the flexible and reconfigurable frequency selective surface for C-band was designed using patch array and grid structure for radome and other curved surface applications. Frequency reconfigurability was obtained by varying the capacitance of varactor diode and flexibility is implemented by using flexible PCB. For the validity of the proposed structure, we fabricated the flexible and reconfigurable frequency selective structure and measured the frequency reconfigurability for different bias voltages and different curvature surfaces from the optimized design parameters. From the measurement results, we know that the proposed structure has the wideband reconfigurable frequency bandwidth of 6.05-7.08GHz. We can apply this proposed structure to the curved surface like as radome of aircraft or warship.

• Journal of the Korean Vacuum Society
• /
• v.16 no.5
• /
• pp.371-376
• /
• 2007

We have investigated the lasing characteristics of the InGaAs quantum dot laser diode (QD-LD) and InGaAs quantum well laser diode (QW-LD) operated at the 980 nm wavelength range. The 980-nm lasers are used as a pumping source for a erbium-doped fiber amplifier (EDFA) and it shows high efficiency in long-haul optical fiber network. We have compared the threshold current density, the characteristic temperature, the optical power and the internal efficiency of QD-LD and QW-LD under a pulsed current condition. The QD-LD shows superior performances to the QW-LD. Further optimization of a LD structure is expected to the superior performances of a QD-LD.

• ETRI Journal
• /
• v.30 no.5
• /
• pp.718-722
• /
• 2008

In this paper, a design for a novel microstrip antenna with circular polarization diversity is proposed and experimentally investigated. This antenna is excited by a microstrip line, which is located at the corner of a circular patch. The polarization state can be switched electrically by setting a diode to on or off. The novel structure we describe here enables the optimization of the input match for both polarizations. From the measured result, good axial ratios are observed at the operating frequencies.

• ETRI Journal
• /
• v.29 no.6
• /
• pp.811-813
• /
• 2007

We report on a ridge waveguide laser diode with laterally tapered waveguides fabricated in a single growing step using a double patterning method. In this structure, nearly constant output power is obtained with the change of the lower tapered waveguide width, and the facet power ratio of 1.4 to 1.5 is observed over the current range. The asymmetric facet power property is also investigated.

• 한국정보디스플레이학회:학술대회논문집
• /
• 2006.08a
• /
• pp.105-110
• /
• 2006

The highly integrated nature of polymer based organic light emitting diode (POLED) microdisplay technology, coupled with low voltage and low power electroluminescent light generation, combine to offer a very promising technology for use in portable and personal electronics products. We briefly describe the technology before discussing how to engineer the color gamut using whiteemitting polymer materials, microcavity device structure and color filter absorbance.