• The Transactions of the Korean Institute of Electrical Engineers C
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• v.49 no.2
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• pp.78-81
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• 2000

The closed-form analytic solutions for the breakdown voltage of 6H-SiC RTD(silicon carbide reachthrough diode) having metal$-n^--n^+$ Schottky structure or $p^+-n^--n^+$, are successfully derived by solving impact ionization integral using an effective ionization coefficient. For the lightly doped n- epitaxial layer, the breakdown voltage of SiC RTD are nearly constant with the increased doping concentration while the breakdown voltages decrease for the heavily doped epitaxial layer.

• Journal of the Optical Society of Korea
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• v.15 no.2
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• pp.124-127
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• 2011

Quantum dots were designed within a GRIN-SCH(Graded index - Separate confinement Heterostructure) heterostructure to create a high power InAlAs/AlGaAs laser diode. 808 nm light emission was with a quantum dot composition of In0.665Al0.335As and wetting layer composition of Al0.2Ga0.8As by LASTIP simulation software. Typical characteristics of GRIN structures such as high confinement ratios and Gaussian beam profiles were shown to still apply when quantum dots are used as the active media. With a dot density of 1.0x1011 dots/cm2, two quantum dot layers were found to be good enough for low threshold, high-power laser applications.

• Journal of the Korean Institute of Telematics and Electronics
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• v.21 no.5
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• pp.11-16
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• 1984

In this paper, the construction of the Liquid Phase Epitaxy system for fabricating III-V compound semiconductor devices and the method of growing AIGaAs/GaAs Double-Hetero-structure are discussed. The possibility of this Double-Heterostructure for the Light Emitting Diode is confirmed also.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.11 no.10
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• pp.897-902
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• 1998

We prepared Organic LED with a two layer structure by vacuum evaporation. The diode consisted of hole transfer layer (thickness of 30, 50, 70 nm) and electron transfer layer (thickness of 70, 50, 30 nm) material, which was N, N'-diphenyl- N, N'-bis-(3-methyl phenyl)-1,1'-diphenyl-4,4'-diamine)(TPD) and tris(8-hydroxy quinoline) aluminum(Alq3), respectively. We investigated EL properties of the LED with various thickness and cathode electrode. The best results were obtained when thickness of the electron layer is equal to that of emission layer and when AlLi alloy was used as a cathode. The EL intensity, luminance and efficiency of organic LED with equal of layer thick were improved seven, three and two times, respectively. Alq3 was ionized by carrier injection from cathode and could produce exitons. After electron-hole pairs were formed by combination of the electrons and holes at the emission layer, Alq3 layer emitted light.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11a
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• pp.312-315
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• 2001

Recently organic electroluminescent devices have been intensively investigated for using in full-color flat-panel display. Since the quantum efficiency of electrophosphorescent device decrease rapidly as the luminance increase, it is desirable to operate the electrophosphorescent display with active matrix rather than passive matrix. Here we report the study of driving electrophosphorescent diode with all organic thin film transistor(OTFT). The structure of electrophosphorescent diode is ITO/TPD/BCP:Ir(ppy)$_3$/BCP/Alq$_3$/Li:Al/Al. In OTFT, Polymer is used as an insulator and pentacene as an active layer. Detailed performance of the integrated device will be discussed.

• Journal of Power Electronics
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• v.16 no.1
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• pp.93-101
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• 2016

A new four-primary-switch diode clamped soft switching three-level DC-DC converter (TLDC) with full zero-voltage switching (ZVS) load range and TL secondary voltage waveform is proposed. The operation principle and characteristics of the presented converter are discussed, and experimental results are consistent with theoretical predictions. The improvements of the proposed converter include a simple and compact primary structure, TL secondary rectified voltage waveform, wide load range ZVS for all primary switches, and full output-regulated range with soft switching operation. The proposed converter also has some disadvantages. The VA rating of the transformer is slightly larger than that of conventional TLDCs in variable input and constant output mode. The conduction loss of the primary coil is slightly higher because an air gap is inserted into the magnetic cores of the transformer. Finally, the secondary circuit is slightly complex.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.11a
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• pp.520-524
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• 1999

Light-emitting diode(LEDs), diode arrays, and phosphor display panels are finding increased use in a variety of commercial applications. Present and anticipated application of these devices include solid state indicator and display systems. In this work, Phosphor based on ZnS:Cu are used. Relation by luminance with the thickness of insulating layer and phosphor layer are discussed. Increased thickness of insulating layer are stable on voltage to 300V. By considering thickness and voltage, optimal structure and thickness are investigated. In order to maximize even surface emission, various sieving processes are introduced. 150cd/m$^2$ luminance by various wave intensity are investigated in stable voltage and frequency.

• The Transactions of the Korean Institute of Power Electronics
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• v.26 no.1
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• pp.9-15
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• 2021

In multi-string light-emitting diode (LED) driver system, current balancing is crucial because the brightness of LED is directly related to its forward current. This paper presents a novel LED current balancing topology using current-fed Z-source converter. With the proposed structure, currents flowing through two LED strings are automatically balanced owing to the charge-balance condition on capacitors. Operation of the proposed converter is simple and the proposed converter uses only one active switch and one diode. Moreover, low-side gate driving can be used to operate the active switch. To verify the operation of the proposed LED current balancing converter, a prototype is built and tested with different numbers of LEDs.

• Korean Journal of Materials Research
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• v.3 no.5
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• pp.443-450
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• 1993

Self-alignment gatc Schottky contact structure on Si- implanted GaAs was formed by plasma enhanced chemical vapor dcposirion. Tungsten nitride thin films (ahclut 1600$\AA$) \vcre dopositcd on GaAs at $350^{\circ}C$ in order to fahricarc GaAs 1Cs and ttwn rapidly annealed at $750^{\circ}C$ to $900^{\circ}C$. Thermal charac tcristics of PECVD)-$W_{67}N_{43}$/GaAs structure were investigated by X-ray diffraction, photolumintesccnce. and optical deep level transient specrroscopy. Results revealed that $W_{67}N_{33}$ gate was more thermally sta ble with GaAs substrate than W gate and Si atoms implanted In $W_{67}N_{33}$/GaAs structure became morr active than those In W/GaAs after annealing. I-V characteristics of $W_{67}N_{33}$/GaAs diod c exhibired a nearly ideal diode behavior. The termal stability of $W_{67}N_{33}$/GaAs diode was better than that of W/GaAs diode with the post annealing at temperatures from 800 to $900^{\circ}C$ for 20s without As overpressure.

• Transactions on Electrical and Electronic Materials
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• v.10 no.2
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• pp.40-43
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• 2009

The authors fabricated a nanopatterned surface on a GaN thin film deposited on a sapphire substrate and used that as an epitaxial wafer on which to grow an InGaN/GaN multi-quantum well structure with metal-organic chemical vapor deposition. The deposited GaN epitaxial surface has a two-dimensional photonic crystal structure with a hexagonal lattice of 230 nm. The grown structure on the nano-surface shows a Raman shift of the transverse optical phonon mode to $569.5\;cm^{-1}$, which implies a compressive stress of 0.5 GPa. However, the regrown thin film without the nano-surface shows a free standing mode of $567.6\;cm^{-1}$, implying no stress. The nanohole surface better preserves the strain energy for pseudo-morphic crystal growth than does a flat plane.