• 한국정보전자통신기술학회논문지
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• 제2권4호
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• pp.59-64
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• 2009

본 논문에서는 새로운 형태의 도넛형 결함 접지면 구조를 이용한 공진기의 동작특성과 등가회로을 나타내고, 이것의 접지면에 칩 캐패시터를 추가하여 공진주파수를 가변할 수 있도록 설계하였다. 일반적으로 결함접지면 구조는 병렬 공진 특성을 갖는다. 여기에 집중소자 캐패시터를 추가하면 공진주파수가 낮아지게 된다. 캐패시터 대신에 바랙터다이오드를 이용하면 전압으로써 공진 주파수를 제어할 수 있다. 본 공진기는 전압제어발진기와 가변주파수 대역통과 여파기등에 응용될 수 있다.

• 반도체디스플레이기술학회지
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• 제3권3호
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• pp.31-35
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• 2004

A blue light emitting diode with 8 periods InGaN/GaN multi-quantum well structure grown by metal-organic chemical vapor deposition was fabricated with the inclusion of the metal-interconnection process in order to integrate the chips for light lamp. The quantum well structure provides the blue light photoluminescence peaked at 479.2 nm at room temperature. As decreasing the temperature to 20 K, the main peak was shifted to 469.7 nm and a minor peak at 441.9 nm appeared indicating the quantum dot formation in quantum wells. The current-voltage measurement for the fabricated LED chips shows that the metal-interconnection provides good current path with ohmic resistance of 41 $\Omega$.

• JSTS:Journal of Semiconductor Technology and Science
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• 제10권2호
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• pp.152-159
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• 2010

We propose a semi-analytical current conduction model for depletion-mode n-type nanowire field-effect transistors (NWFETs) with top-gate structure. The NWFET model is based on an equivalent circuit consisting of two back-to-back Schottky diodes for the metal-semiconductor (MS) contacts and the intrinsic top-gate NWFET. The intrinsic top-gate NWFET model is derived from the current conduction mechanisms due to bulk charges through the center neutral region as well as of accumulation charges through the surface accumulation region, based on the electrostatic method, and thus it includes all current conduction mechanisms of the NWFET operating at various top-gate bias conditions. Our previously developed Schottky diode model is used for the MS contacts. The newly developed model is integrated into ADS, in which the intrinsic part of the NWFET is developed by utilizing the Symbolically Defined Device (SDD) for an equation-based nonlinear model. The results simulated from the newly developed NWFET model reproduce considerably well the reported experimental results.

• 전력전자학회:학술대회논문집
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• 전력전자학회 2007년도 하계학술대회 논문집
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• pp.289-292
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• 2007

The flyback converter is one of the most attractive isolated converters in small power applications because of its simple structure. However, it suffers from high device stress, large transformer size, and high voltage stress across switch and diode. To solve these problems a new cost-effective PWM single-switch isolated converter is proposed. The proposed converter has no output filter inductor, reduced voltage stress on the secondary devices, and reduced transformer size. Moreover, the switch turnoff loss is reduced and no dissipative snubber across the secondary diode is required. Therefore, it features a simple structure, low cost, and high efficiency. The operational principle and characteristics of proposed converter are presented compared with flyback converter and verified experimentally.

• Current Optics and Photonics
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• 제7권5호
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• pp.496-503
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• 2023

We present a detailed analysis of the light extraction efficiency (LEE) of a core-shell nanorod light emitting diode (LED) using finite-difference time-domain (FDTD) simulations. We found that the LEE has a deep dependence on source positions and polarization directions based on the calculated LEE results for every x and z position inside the core-shell nanorod structure. The LEEs are different for the upper part (pyramid) and the lower part (sidewall) of the core-shell nanorod owing to total internal reflection (TIR) and the generated optical modes in the structure. As a result, the LEE of sidewall is much larger than that of pyramid. The averaged LEE of the core-shell nanorod LED is also investigated with variable p-GaN thickness, n-GaN thickness, and height for the design guidelines for the optimized LEE of core-shell nanorod LEDs.

• Journal of information and communication convergence engineering
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• 제14권1호
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• pp.35-39
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• 2016

In this paper, we develop a 94-GHz single balanced mixer with low conversion loss using planar Schottky diodes on a GaAs substrate. The GaAs Schottky diode has a nanoscale anode with a T-shaped disk that can yield high cutoff frequency characteristics. The fabricated Schottky diode with an anode diameter of 500 nm has a series resistance of 21 Ω, an ideality factor of 1.32, a junction capacitance of 8.03 fF, and a cutoff frequency of 944 GHz. Based on this technology, a 94-GHz single balanced mixer was constructed. The fabricated mixer shows an average conversion loss of -7.58 dB at an RF frequency of 92.5 GHz to 95 GHz and an IF frequency of 500 MHz with an LO power of 7 dBm. The RF-to-LO isolation characteristics were greater than -32 dB. These values are considered to be attributed to superior Schottky diode characteristics.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 하계학술대회 논문집
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• pp.195-196
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• 2009

This paper describes the fabrication and characteristics of polycrystalline 3C-SiC thin film diodes for extreme environment applications, in which the this thin film was deposited onto oxidized Si wafers by APCVD using HMDS In this work, the optimized growth temperature and HMDS flow rate were $1,100^{\circ}C$ and 8sccm, respectively. A Schottky diode with a Au, Al/poly 3C-SiC/$SiO_2$/Si(n-type) structure was fabricated and its threshold voltage ($V_d$), breakdown voltage, thickness of depletion layer, and doping concentration ($N_D$) values were measured as 0.84V, over 140V, 61nm, and $2.7{\times}10^{19}cm^2$, respectively. To produce good ohmic contact, Al/3C-SiC were annealed at 300, 400, and $500^{\circ}C$ for 30min under a vacuum of $5.0{\times}10^{-6}$Torr. The obtained p-n junction diode fabricated by poly 3C-SiC had similar characteristics to a single 3C-SiC p-n junction diode.

• 한국전자파학회논문지
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• 제13권5호
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• pp.451-458
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• 2002

6-18 GHz 주파수대역에서 사용되는 흡수형의 SP3T 및 SP8T 스위치 모듈을 설계 및 제작하였다. 스위치 모듈에 사용된 MMIC 칩의 에피구조는 저 손실과 고 전력용으로 설계되었다. 최대입력전력은 SP3T 스위치 모듈이 2 W이고 SP8T 스위치 모듈이 1 W이다. 200 nsec의 고속 스위칭을 위한 구동회로를 모듈에 내장하였다. 모듈의 최대삽입손실은 SP3T 및 SP8T에 대해 각각 2.8 dB, 4.2 dB로 측정되었다. 입ㆍ출력포트간 분리도는 모두 55 dB 이상을 얻을 수 있었다. 두 스위치 모듈은 전자전 시스템에 적용하기 위한 관련 환경시험을 모두 통과하였다.

• 한국진공학회지
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• 제15권5호
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• pp.493-498
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• 2006

MOCVD로 성장된 InGaAs 양자점을 이용하여 $1.5{\mu}m$의 발광파장을 갖는 고휘도 발광소자 (Superluminescent diode, SLD)를 제작하였다. 상온에서 SLD의 광출력은 CW 3 mW 였고, 3-dB 파장대역폭은 55 nm 이었다.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제54권4호
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• pp.178-184
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• 2005

In this paper, using diplexer structure and varactor diode controlled by reverse bias voltage for diplexer switch gives possibilities to improve isolation and current characteristics. 1 have newly designed switch with high isolation by application varactor diode corresponding to capacitor of diplexer. The low-pass filter for proposed tunable diplexer passes the microwave signal in the bandwidth for wireless cellular network systems and high-pass filter passes it in the bandwidth for wireless personal communication services (PCS) network systems. As the capacitance of the low-pass filter increases, the cut-off frequency can be moved to low frequency, so that the switch is on state in cellular bandwidth and off state in the PCS bandwidth, in contrast to, as the capacitance for attenuation characteristic of high-pass filter increases, it can be moved to high frequency, so that the switch is off state and on state in the cellular bandwidth. it is possible to improve isolation and current consumption characteristics by application diplexer design methods and varactor diode. 1 expect that the tunable diplexer circuit and design methods should be able to find applications on MMIC and low temperature copired ceramic (LTCC).