• IE interfaces
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• v.12 no.3
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• pp.382-389
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• 1999

Recently the strategic importance of Advanced Manufacturing Technology(AMT) has been increased. This paper focuses on the modelling of diffusion process of AMT from the benefit-cost analytic perspective. The mechanism of AMT diffusion includes the decision-making process of individual firms. By using the model, we can forecast the AMT diffusion level.

• Journal of applied mathematics & informatics
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• v.29 no.3_4
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• pp.1043-1048
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• 2011

W. Choi([1]) identified and characterized the limiting diffusion of this diploid model by defining discrete generator for the rescaled Markov chain. We denote by F the homozygosity and by S the average selection intensity. In this note, we define the Fleming-Viot process with generator of limiting diffusion and provide exact result for the relations of F and S.

• JSTS:Journal of Semiconductor Technology and Science
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• v.6 no.1
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• pp.16-21
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• 2006

A simple doping method to fabricate a very thin channel body of the p-type FinFETs with a 20 nm gate length by solid-phase-diffusion (SPD) process was developed. Using the poly-boron-films (PBF) as a novel diffusion source of boron and the rapid thermal annealing (RTA), the p-type sourcedrain extensions of the FinFET devices with a threedimensional structure were doped. The junction properties of boron doped regions were investigated by using the $p^+-n$ junction diodes which showed excellent electrical characteristics. Single channel and multi-channel p-type FinFET devices with a gate length of 20-100 nm was fabricated by boron diffusion process using PBF and revealed superior device scalability.

• Journal of the Korean Operations Research and Management Science Society
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• v.29 no.1
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• pp.87-99
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• 2004

In this paper, we have developed a technology-service relationship model which describes the diffusion process of a group of services and relevant technologies, and have applied the developed model to the prediction of the number of subscribers to the next generation mobile service. The technology-service relationship model developed in this paper incorporates the developing process of relevant technologies, a supply-side factor, into the diffusion process of specific services, while many diffusion models and multi-generation diffusion models in previous researches are mainly reflect the demand-side factors. So, the proposed model could effectively applied to the telecommunication services where the developing of the relevant technologies are very essential to the service Penetration. In our application, the Proposed model provides a competitive substitution between the next generation mobile service and the traditional mobile service.

• 한국연소학회:학술대회논문집
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• 2000.12a
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• pp.175-182
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• 2000

Flame temperatures were measured and compared using a rapid insertion technique and a two-color pyrometry with Abel inversion process in co-flow ethylene diffusion flames. The measured line-of-sight temperature showed very limited usefulness in understanding the detailed soot formation/oxidation process in a co-flow diffusion flame. The flame temperatures could be measured with reasonable accuracy for the soot laden regions in ethylene diffusion flames using two-color pyrometry with an Abel inversion technique. Two-color-pyrometry with Abel inversion was demonstrated as a useful temperature measurement technique for co-flow diffusion flames, expecially under pressure conditions, where a thermocouple is not applicable. The soot volume fraction could be also obtained using tow-color pyrometry with Abel inversion, which provides important information for understanding the soot formation/oxidation mechanism in diffusion flames.

• Journal of applied mathematics & informatics
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• v.4 no.2
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• pp.379-386
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• 1997

This paper considers the price at time zero of a contingent claim when the process is a diffusion/point process model . And we apply this price to European option.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.07a
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• pp.115-117
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• 2005

In this paper, we formed the shallow junction by preamorphization and low energy ion implantation. And a simulator is designed for predicting the annealing process results. Especially, if considered the applicable to single step annealing process(RTA, FA) and dual step annealing process(RTA+FA, FA+RTA). In this simulation, the ion implantation model and the boron diffusion model are used. The Monte Carlo model is used for the ion implantation. Boron diffusion model is based on pair diffusion at nonequilibrium condition. And we considered that the BI-pairs lead the diffusion and the boron activation and clustering reaction. Using the boundary condition and initial condition, the diffusion equation is solved successfully. The simulator is made ofC language and reappear the experimental data successfully.

• Journal of the Korean Society of Manufacturing Process Engineers
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• v.18 no.7
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• pp.71-76
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• 2019

The diffusion of the drug component of the inflammatory patch into the living tissue was analyzed by laser induced plasma spectroscopy (LIBS). Calcium element, which is a diffusion catalyst of the drug in the inflammatory analgesic patch, is transferred into the body through the diffusion process of the substance. The test pieces used in the experiment are pig skin tissues which are similar to human skin. As a result, the diffusion coefficient D of the calcium element was found to be average $8.24{\times}10^{-2}({\mu}m^2/s)$. Experimental results showed that the most influential factors on the diffusion of materials were temperature variables.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.41 no.6
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• pp.25-31
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• 2004

In this paper, we introduce kinetic Monte Carlo (kMC) methods for simulating diffusion process in nano-scale device fabrication. At first, we review kMC theory and backgrounds and give a simple point defect diffusion process modeling in thermal annealing after ion (electron) implantation into Si crystalline substrate to help understand kinetic Monte Carlo methods. kMC is a kind of Monte Carlo but can simulate time evolution of diffusion process through Poisson probabilistic process. In kMC diffusion process, instead of. solving differential reaction-diffusion equations via conventional finite difference or element methods, it is based on a series of chemical reaction (between atoms and/or defects) or diffusion events according to event rates of all possible events. Every event has its own event rate and time evolution of semiconductor diffusion process is directly simulated. Those event rates can be derived either directly from molecular dynamics (MD) or first-principles (ab-initio) calculations, or from experimental data.

• Journal of Technology Innovation
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• v.13 no.1
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• pp.113-139
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• 2005

The purpose of this study is to analyse the diffusion process of personal computer (PC) in Korea during the 1990's. To achieve the goal, five research steps have been done such as the literature survey of diffusion theory, set-up of theoretic equilibrium model of supply and demand, derivation of an equilibrium path using Hamiltonian, and empirical analysis. The empirical analysis has been performed based on that equilibrium path. The results can be summarized as follows : First, technological attribute of diffusing product influences the diffusion speed of Product. It has been proven that the size of the network has a significant effect on the diffusion of PC in empirical study Second, supply factors have an important role in the diffusion process. According to the empirical analysis, decreasing cost of production as a result of technological advance promotes the speed of diffusion. This point seems to be manifest theoretically, but existing empirical models have not included supply factors explicitly, Third, it has been found out that expectation of decreasing cost would influence the speed of diffusion negatively as expected ex ante. Theoretically this result is supported by arbitrage condition of purchasing timing.