• Title/Summary/Keyword: diffusion bonding method

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The Influence of CuO on Bonding Behaviors of Low-Firing-Substrate and Cu Conductor (저온소성 기판과 Cu와의 동시소성에 미치는 CuO의 첨가효과)

  • 박정현;이상진
    • Journal of the Korean Ceramic Society
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    • v.31 no.4
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    • pp.381-388
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    • 1994
  • A new process which co-fires the low-firing-substrate and copper conductor was studied to achieve good bond strength and low sheet resistance of conductor. Cupric oxide is used as the precursor of conductive material in the new method and the firing atmosphere of the new process is changed sequently in air H2N2. The addition of cupric oxide and variations of firing atmosphere permited complete binder-burnout in comparison with the conventional method and contributed to the improvement of resistance and bonding behaviors. The potimum conditions of this experiment to obtain the satisfactory resistance and bond strength are as follows (binder-burnout temperature in air; 55$0^{\circ}C$, reducing temperature in H2; 40$0^{\circ}C$ for 30 min, ratio of copper and cupric oxide; 60:40~30:70 wt%). The bonding mechanism between the substrate and metal was explained by metal diffusion layer in the interface and the bond strength mainly depended on the stress caused by the difference of shrinkage and thermal expansion coefficient between the substrate and metal.

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Variations of Micro-Structures and Mechanical Properties of Ti/STS321L Joint Using Brazing Method (브레이징을 이용한 Ti/STS321L 접합체의 미세조직과 기계적 특성의 변화)

  • 구자명;정우주;한범석;권상철;정승부
    • Journal of Welding and Joining
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    • v.20 no.6
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    • pp.106-106
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    • 2002
  • This study investigated variations of micro-structures and mechanical properties of Ti / STS321L joint with various bonding temperature and time using brazing method. According to increasing bonding temperature and time, it was observed that the thickness of their reaction layer increased due So increasing diffusion rate and time. From the EPMA results, Ti diffused to the STS321L substrate according to increasing bending time to 30min. Hardness of bonded interface increased with increasing bonding temperature and time due to increasing their oxides and intermetallic compounds. XRD data indicated that Ag, Ag-Ti intermetallic compounds, TiAg and Ti₃Ag and titanium oxide, TiO₂were formed in interface. In tensile test, it was found that the tensile strength had a maximum value at the bonding temperature of 900℃ and time of 5min, and tensile strength decreased over bonding time of 5min. The critical thickness of intermetallic compounds was observed to about 30㎛, because of brittleness from their excessive intermetallic compounds and titanium oxide, and weakness from void.

Variations of Micro-Structures and Mechanical Properties of Ti/STS321L Joint Using Brazing Method (브레이징을 이용한 Ti/STS321L 접합체의 미세조직과 기계적 특성의 변화)

  • 구자명;정우주;한범석;권상철;정승부
    • Journal of Welding and Joining
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    • v.20 no.6
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    • pp.830-837
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    • 2002
  • This study investigated variations of micro-structures and mechanical properties of Ti / STS321L joint with various bonding temperature and time using brazing method. According to increasing bonding temperature and time, it was observed that the thickness of their reaction layer increased due So increasing diffusion rate and time. From the EPMA results, Ti diffused to the STS321L substrate according to increasing bending time to 30min. Hardness of bonded interface increased with increasing bonding temperature and time due to increasing their oxides and intermetallic compounds. XRD data indicated that Ag, Ag-Ti intermetallic compounds, TiAg and $Ti_3Ag$ and titanium oxide, $TiO_2$ were formed in interface. In tensile test, it was found that the tensile strength had a maximum value at the bonding temperature of $900^{\circ}C$ and time of 5min, and tensile strength decreased over bonding time of 5min. The critical thickness of intermetallic compounds was observed to about $30\mu\textrm{m}$, because of brittleness from their excessive intermetallic compounds and titanium oxide, and weakness from void.

Vertical Diffusion of Ammonia Into Amorphous Ice Sturcture

  • Kim, Yeong-Sun;Mun, Ui-Seong;Gang, Heon
    • Proceedings of the Korean Vacuum Society Conference
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    • 2012.02a
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    • pp.280-280
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    • 2012
  • We examined ammonia diffusion on the surface of amorphous ice film through the measurement of decreasing residual quantity of $NH_3$ molecules compared to $H_2O$. The populations of $NH_3$ molecules on the surface of amorphous ice were monitored by using the techniques of temperature programmed reactive ion scattering (TPRIS) method. The ratio of intensity between ammonia and water was examined as a function of time at controlled temperature. When ammonia molecules were externally added onto an ice film at a temperature of 80 K, ammonia coverage with regard to ice was 0.12-0.16 ML. The intensity of ammonia molecules on the surface of ice decreased as time increased and the extent of decreased intensity of ammonia increased as controlled temperature increased. Moreover, energy barrier was estimated to be $51kJmol^{-1}$ on amorphous ice film. The results of the experiment indicate that ammonia molecules have a property of vertical diffusion into amorphous ice and the energy barrier of ammonia diffusion into bulk of ice is higher than that of hydrogen bonding.

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FE-SEM Image Analysis of Junction Interface of Cu Direct Bonding for Semiconductor 3D Chip Stacking

  • Byun, Jaeduk;Hyun, June Won
    • Journal of the Korean institute of surface engineering
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    • v.54 no.5
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    • pp.207-212
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    • 2021
  • The mechanical and electrical characteristics can be improved in 3D stacked IC technology which can accomplish the ultra-high integration by stacking more semiconductor chips within the limited package area through the Cu direct bonding method minimizing the performance degradation to the bonding surface to the inorganic compound or the oxide film etc. The surface was treated in a ultrasonic washer using a diamond abrasive to remove other component substances from the prepared cast plate substrate surface. FE-SEM was used to analyze the bonding characteristics of the bonded copper substrates, and the cross section of the bonded Cu conjugates at the sintering junction temperature of 100 ℃, 150 ℃, 200 ℃, 350 ℃ and the pressure of 2303 N/cm2 and 3087 N/cm2. At 2303 N/cm2, the good bonding of copper substrate was confirmed at 350 ℃, and at the increased pressure of 3087 N/cm2, the bonding condition of Cu was confirmed at low temperature junction temperature of 200 ℃. However, the recrystallization of Cu particles was observed due to increased pressure of 3087 N/cm2 and diffusion of Cu atoms at high temperature of 350 ℃, which can lead to degradation in semiconductor manufacturing.

Friction Welding of Dissimilar Hot Die Punch Materials and Its Creep Prediction and Quality Evaluation by AE(I) - FRW and AE+ (열간 금형펀치 제작을 위한 이종재 마찰용접과 고온크리프 실시간 예측 및 AE에 의한 품질평가(Ⅰ) -마찰용접과 AE)

  • Park, Il-Dong;Oh, Sae-Kyoo;Kim, Ji-Su
    • Journal of Ocean Engineering and Technology
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    • v.13 no.3 s.33
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    • pp.77-82
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    • 1999
  • The compleete joining method for dissimilar hot die punch materials and its real-time evaluation method are not available at present. Brazing method has been used for joining them, but it is known that the welded joint by the brazing has the lower bonding efficiency and reliability than the diffusion welding. The friction wleding with a diffusion mechanism in bonding was applied in this study. So, this work was carried out to determine the optimal friction welding conditions and to analyze mechanical properties of friction welded joints of hot die punch materials (STD61 for the blade part of hot die punch) to alloy steel (SCM440 for the shank park of hot die punch) such as plunger. In addition, acoustic emission test was carried out during friction welding to evaluate the weld quality.

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Thermal Compression of Copper-to-Copper Direct Bonding by Copper films Electrodeposited at Low Temperature and High Current Density (저온 및 고전류밀도 조건에서 전기도금된 구리 박막 간의 열-압착 직접 접합)

  • Lee, Chae-Rin;Lee, Jin-Hyeon;Park, Gi-Mun;Yu, Bong-Yeong
    • Proceedings of the Korean Institute of Surface Engineering Conference
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    • 2018.06a
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    • pp.102-102
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    • 2018
  • Electronic industry had required the finer size and the higher performance of the device. Therefore, 3-D die stacking technology such as TSV (through silicon via) and micro-bump had been used. Moreover, by the development of the 3-D die stacking technology, 3-D structure such as chip to chip (c2c) and chip to wafer (c2w) had become practicable. These technologies led to the appearance of HBM (high bandwidth memory). HBM was type of the memory, which is composed of several stacked layers of the memory chips. Each memory chips were connected by TSV and micro-bump. Thus, HBM had lower RC delay and higher performance of data processing than the conventional memory. Moreover, due to the development of the IT industry such as, AI (artificial intelligence), IOT (internet of things), and VR (virtual reality), the lower pitch size and the higher density were required to micro-electronics. Particularly, to obtain the fine pitch, some of the method such as copper pillar, nickel diffusion barrier, and tin-silver or tin-silver-copper based bump had been utillized. TCB (thermal compression bonding) and reflow process (thermal aging) were conventional method to bond between tin-silver or tin-silver-copper caps in the temperature range of 200 to 300 degrees. However, because of tin overflow which caused by higher operating temperature than melting point of Tin ($232^{\circ}C$), there would be the danger of bump bridge failure in fine-pitch bonding. Furthermore, regulating the phase of IMC (intermetallic compound) which was located between nickel diffusion barrier and bump, had a lot of problems. For example, an excess of kirkendall void which provides site of brittle fracture occurs at IMC layer after reflow process. The essential solution to reduce the difficulty of bump bonding process is copper to copper direct bonding below $300^{\circ}C$. In this study, in order to improve the problem of bump bonding process, copper to copper direct bonding was performed below $300^{\circ}C$. The driving force of bonding was the self-annealing properties of electrodeposited Cu with high defect density. The self-annealing property originated in high defect density and non-equilibrium grain boundaries at the triple junction. The electrodeposited Cu at high current density and low bath temperature was fabricated by electroplating on copper deposited silicon wafer. The copper-copper bonding experiments was conducted using thermal pressing machine. The condition of investigation such as thermal parameter and pressure parameter were varied to acquire proper bonded specimens. The bonded interface was characterized by SEM (scanning electron microscope) and OM (optical microscope). The density of grain boundary and defects were examined by TEM (transmission electron microscopy).

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A Study on Design and Manufacturing Methods of Dual-Polarization Monopulse Feed Structure in Millimeter-wave(W band) (밀리미터파(W대역) 이중편파 모노펄스 급전 구조 설계 및 제작 방안 연구)

  • Jong-Gyun Baek;Hyeong-Ki Lee;Young-Wan Kim;Hee-Duck Chae;Ji-Han Joo;Jaesik Kim
    • The Journal of the Institute of Internet, Broadcasting and Communication
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    • v.23 no.6
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    • pp.47-53
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    • 2023
  • In this paper, We designed a waveguide-type feed structure that converts millimeter wave dual-polarized signals into monopulse signals and presented a manufacturing method. At millimeter-wave such as the W band, the size of the waveguide is very small, making it very difficult to manufacture complex structures. Therefore, because manufacturability is important for the waveguide-type feed structure in the millimeter-wave, electro forming and diffusion bonding were proposed and verified in this study. The designed monopulse feed structure consists of eight 180° hybrids that combine 90° hybrids and self-compensating phase shifters, and four OMTs to separate dual polarization. The designed feed structure was designed to facilitate electro forming and diffusion bonding, and the manufactured feed structure was verified through a network analyzer. It was confirmed that the two proposed production methods produce a monopulse signal well through the measured magnitude and phase of the port.

Image Classification Using Modified Anisotropic Diffusion Restoration (수정 이방성 분산 복원을 이용한 영상 분류)

  • 이상훈
    • Korean Journal of Remote Sensing
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    • v.19 no.6
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    • pp.479-490
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    • 2003
  • This study proposed a modified anisotropic diffusion restoration for image classification. The anisotropic diffusion restoration uses a probabilistic model based on Markov random field, which represents geographical connectedness existing in many remotely sensed images, and restores them through an iterative diffusion processing. In every iteration, the bonding-strength coefficient associated with the spatial connectedness is adaptively estimated as a function of brightness gradient. The gradient function involves a constant called "temperature", which determines the amount of discontinuity and is continuously decreased in the iterations. In this study, the proposed method has been extensively evaluated using simulated images that were generated from various patterns. These patterns represent the types of natural and artificial land-use. The simulated images were restored by the modified anisotropic diffusion technique, and then classified by a multistage hierarchical clustering classification. The classification results were compared to them of the non-restored simulation images. The restoration with an appropriate temperature considerably reduces error in classification, especially for noisy images. This study made experiments on the satellite images remotely sensed on the Korean peninsula. The experimental results show that the proposed approach is also very effective on image classification in remote sensing.

Evaluation of Chloride Resistance with Application Method of Coating Materials Using Electric Acceleration Test (코팅재료의 도포 특성에 따른 전기적 촉진을 통한 염해 저항성 평가)

  • Kim Myung Yu;Yang Eun Ik;Yeon Kyu Seok;Joo Myung Ki
    • Proceedings of the Korea Concrete Institute Conference
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    • 2005.11a
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    • pp.551-554
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    • 2005
  • The durability of concrete is decreased by various deterioration factors such as a crack, spalling, corrosion. Many repair and rehabilitation methods have been introduced to extend service life of RC structure. An application of coating material is one of repair and rehabilitation methods. However, there is a problem due to reduction of bonding strength and damage of coating material in the case of existed coating material. Thus, this paper is aim to investigate the chloride resistance according to application method of coating material which improve the existed problem. According to the results, it is showed that application of coating material reduces diffusion of chloride into concrete. In special, application of MMA polymer showed the best resistance for chloride attack. However, variation of application method and number of times has a minor effect on chloride diffusion.

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