• Title/Summary/Keyword: diffraction parameter

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High Out-of-Plane Alignment of Liquid Crystalline Methacrylate Copolymer Bearing Photoreactive 4-Styrylpyridine Moiety

  • Kwak, Gi-Seop;Kong, Jong-Yun;Kim, Min-Woo;Hyun, Seok-Hee;Kim, Woo-Sik
    • Macromolecular Research
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    • v.17 no.4
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    • pp.271-275
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    • 2009
  • This paper describes the out-of-plane order of a liquid crystalline(LC) methacrylate copolymer(3) comprised of a methacrylate(1) with a 4-styrylpyridine moiety as the photo-cyclodimerizable group and a benzoate moiety as the mesogenic group in the side chain, and another methacrylate(2) with a 4-(4-methoxyphenyl)benzoate moiety as the mesogenic group. The composition of 1 and 2 units in 3 was estimated to have a molar ratio of 54.2:45.8 by $^{1}H$ NMR spectroscopy. The X-ray diffraction study revealed that the copolymer forms a partial bilayer smectic structure. The copolymer gave rise to a high out-of-plane order parameter of about 0.74 in a wide LC temperature range of $110{\sim}160^{\circ}C$ after linearly polarized, UV light irradiation and subsequent annealing. Moreover, the external reflection IR analysis indicated that excess UV-light irradiation makes the out-of-plane LC structure of the copolymer appear in a higher and wider temperature range.

Crystallization and Preliminary X-Ray Diffraction Analysis of 5,10-Methylenetetrahydrofolate Dehydrogenase/Cyclohydrolase from Thermoplasma acidophilum DSM 1728

  • Kim, Jae-Hee;Sung, Min-Woo;Lee, Eun-Hye;Nam, Ki-Hyun;Hwang, Kwang-Yeon
    • Journal of Microbiology and Biotechnology
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    • v.18 no.2
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    • pp.283-286
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    • 2008
  • The methylenetetrahydrofolate dehydrogenase/cyclohydrolase (MTHFDC) from the thermoacidophilic archaeon Thermoplasma acidophilum is a 30.6kDa molecular-mass enzyme that sequentially catalyzes the conversion of formyltetrahydrofollate to methylenetetrahydrofolate, with a preference for NADP as a cofactor, rather than NAD. In order to elucidate the functional and structural features of MTHFDC from archaeons at a molecular level, it was overexpressed in Escherichia coli and crystallized in the presence of its cofactor, NADP, at 295K using polyethylene glycol (PEG) 4000 as a precipitant. The crystal is a member of the monoclinic space group $P2_1$, with the following unit cell parameters: $a=66.333{\AA},\;b=52.868{\AA},\;c=86.099{\AA},\;and\;{\beta}=97.570^{\circ}$, and diffracts to a resolution of at least $2.40{\AA}$ at the synchrotron. Assuming a dimer in the crystallographic asymmetric unit, the calculated Matthews parameter $(V_M)\;was\;2.44{\AA}^3/Da$ and the solvent content was 49.7%.

Utilization of Saline Solutions in the Modification of Lignocellulose from Champaca Wood

  • Sangian, Hanny F.;Sehe, Muhammad Rifai;Tamuntuan, Gerald H.;Zulnazri, Zulnazri
    • Journal of the Korean Wood Science and Technology
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    • v.46 no.4
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    • pp.368-379
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    • 2018
  • Objective of this work is to study the effects of a saline solution used to pretreat lignocellulosic material derived from champak timber. The native lignocellulosic solids, in powder form, were mixed with saline water solutions of three different concentrations and maintained for 2 weeks without stirring. The treated solids were washed, recovered, and then dried under sunlight. The substrates were characterized using X-ray diffraction (XRD), Fourier-transform infrared (FTIR) spectroscopy, and scanning electron microscopy (SEM). The crystallinity (CrI), lateral order index (LOI), total crystallinity index (TCI), and surface morphologies of all the samples were determined. The treated biomass structures were compared with controls. The data show that the structures of all the treated substrates changed, as indicated by CrI. CrI of the treated substrates decreased significantly compared with that of the original wood, as did LOI and TCI quantities, whereas the HBI parameter increased. The results indicate that the saline water pretreatment modified the wood samples.

Ge Crystal Growth on Si Substrate for GaAs/Ge/Si Structure by Plasma-Asisted Epitaxy (GaAs/Ge/Si 구조를 위하여 PAE법을 이용한 Si 기판위에 Ge결정성장)

  • 박상준;박명기;최시영
    • Journal of the Korean Institute of Telematics and Electronics
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    • v.26 no.11
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    • pp.1672-1678
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    • 1989
  • Major problems preventing the device-quality GaAs/Si heterostructure are the lattice mismatch of about 4% and difference in thermal expansion coefficient by a factor of 2.64 between Si and GaAs. Ge is a good candidate for the buffer layer because its lattice parameter and thermal expansion coefficient are almost the same as those of GaAs. As a first step toward developing heterostructure such as GaAs/Ge/Si entirely by a home-built PAE (plasma-assisted epitaxy), Ge films have been deposited on p-type Si (100)substrate by the plasma assisted evaporation of solid Ge source. The characteristics of these Ge/Si heterostructure were determined by X-ray diffraction, SEM and Auge electron spectroscope. PAE system has been successfully applied to quality-good Ge layer on Si substrate at relatively low temperature. Furthermore, this system can remove the native oxide(SiO2) on Si substrate with in-situ cleaning procedure. Ge layer grown on Si substrate by PAE at substrate temperature of 450\ulcorner in hydrogen partial pressure of 10mTorr was expected with a good buffer layer for GaAs/Ge/Si heterostructure.

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Signal Attenuation in Satellite-Land Mobile Communication (통신 위성과 지상 차량간의 통신에 있어서 신호감쇠)

  • Hong, Ui-Seok;Oh, Ell-Duck
    • Journal of the Korean Institute of Telematics and Electronics
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    • v.26 no.7
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    • pp.21-29
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    • 1989
  • Using Fresnel diffraction theory a formula is drived for signal intensity variation caused by finite strip obstacles. Signal intensity according to parameter variation of the obstacle is theoretically calculated by a computer and compared with experimental results. For the experiment, an acryl board 3 mm thick was used on which a special material was painted to prevent some reflections and transmissions of the incident wave. 10-element Yagi antennas were used for transmitting and receiving antenna and the frequency was 820 MHz. Finally a tree model was made as a combination of many different finite strip obstacles. Signal attenuation calculated from numerical analysis agree reasonably with experimental data.

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Structure and Magnetic Characterization of Core-Shell Fe@ZrO2 Nanoparticles Synthesized by Sol-Gel Process

  • Chaubey, Girija S.;Kim, Jin-Kwon
    • Bulletin of the Korean Chemical Society
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    • v.28 no.12
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    • pp.2279-2282
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    • 2007
  • Highly crystalline, uniform Fe nanoparticles were successfully synthesized and encapsulated in zirconia shell using sol-gel process. Two different approaches have been employed for the coating of Fe nanoparticle with zirconia. The thickness of zirconia shell can be readily controlled by altering molar ratio of Fe nanoparticle core to zirconia precursor in the first case where as reaction time was found to be most effective parameter to controlled the shell thickness in the second method. The structure and magnetic properties of the ZrO2-coated Fe nanoparticles were studied. TEM and HRTEM images show a typical core/shell structure in which spherical α-iron crystal sized of ~25 nm is surrounded by amorphous ZrO2 coating layer. TGA study showed an evidence of weight loss of less than 2% over the temperature range of 50-500 °C. The nanoparticles are basically in ferromagnetic state and their magnetic properties depend strongly on annealing temperature. The thermal treatment carried out in as-prepared sample resulted in reduction of coercivity and an increase in saturation magnetization. X-ray diffraction experiments on the samples after annealing at 400-600 °C indicate that the size of the Fe@ZrO2 particles is increased slightly with increasing annealing temperature, indicating the ZrO2 coating layer is effective to interrupt growing of iron particle according to heat treatment.

Structure Analysis of BaTiO3 Film on the MgO(100) Surface by Impact-Collision Ion Scattering Spectroscopy (직충돌 이온산란 분광법을 사용한 MgO(100) 면에 성장된 BaTiO3막의 구조해석)

  • Hwang, Yeon;Lee, Tae-Kun
    • Journal of the Korean Ceramic Society
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    • v.43 no.1 s.284
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    • pp.62-67
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    • 2006
  • Time-of-flight impact-collision ion scattering spectroscopy (TOF-ICISS) using 2 keV $He^+$ ion was applied to study the geometrical structure of the $BaTiO_3$ thin film which was grown on the MgO(100) surface. Hetero-epitaxial $BaTiO_3$ layers were formed on the MgO(100) surface by thermal evaporation of titanium followed first by oxidation at $400^{\circ}C$, subsequently by barium evaporation, and finally by annealing at $800^{\circ}C$. The atomic structure of $BaTiO_3$ layers was investigated by the scattering intensity variation of $He^+$ ions on TOF-ICISS and by the patterns of reflection high energy electron diffraction. The scattered ion intensity was measured along the <001> and <011> azimuth varying the incident angle. Our investigation revealed that perovskite structured $BaTiO_3$ layers were grown with a larger lattice parameter than that of the bulk phase on the MgO(100) surface.

An XRD Study on the Structures of Ferrites : Hematite, Ba-ferrite and Zn2Y(Ba2Zn2Fe12O22) (분말 X-선 회절법에 의한 페라이트의 구조 연구 : 헤마타이트, 바륨페라이트, Zn2Y(Ba2Zn2Fe12O22))

  • 신형섭;권순주
    • Journal of the Korean Ceramic Society
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    • v.30 no.6
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    • pp.499-509
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    • 1993
  • Structures of hematite(${\alpha}$-Fe2O3), Ba-ferrite(BaFe12O19) and Zn2Y(Ba2Zn2Fe12O22) were studied by powder X-ray diffraction(XRD) method. Powder XRD patterns of the ferrites were analyzed with the Rietveld method, and the final refined R-factors were RWP<0.01 and RI<0.03. The lattice parameters refined with hexagonal crystal system were a=5.0342${\AA}$, c=13.746${\AA}$ for hematite, a=5.8928${\AA}$, c=23.201${\AA}$ for Ba-ferrite, and a=5.8763${\AA}$, c=43.567${\AA}$ for Zn2Y. In the hematite, the oxygen parameter is 0.3072 and the Fe-O distances in FeO6octahedron are 1.941${\AA}$ and 2.118${\AA}$, close to the single crystal data of Blake et al.. In the Ba-ferrite, the Fe atom in oxygen trigonal bipyramid is displaced 0.155${\AA}$ away from the BaO3 mirror plane into 4e position. In the Zn2Y, 75% of Zn is located at the oxygen terahedral site in S-block.

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Photovoltaic Properties of Solar Cells with Deposition Temperature of Cu(InGa)Se$_2$ Films (Cu(InGa)Se$_2$ 박막의 성장온도에 따른 태양전지의 광전특성 분석)

  • 김석기;이정철;강기환;윤경훈;박이준;송진수;한상옥
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2002.07a
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    • pp.330-333
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    • 2002
  • The substrate temperature is an important parameter in thin film deposition process. In this paper the effects of the substrate temperature on the properties of CuIn0.75Ga0.25Se2(CIGS) thin films are reported. Structure, surface morphology and optical properties of CIGS thin films deposited at various substrate temperatures have been investigated using a number of analysis techniques. X-ray diffraction (XRD) analysis shows that CIGS films exhibit a strong <112> preferred orientation. As expected, at higher substrate temperatures the films displayed a higher degree of crystallinity. The <112> peak was also enhanced and other CIGS peaks appeared simultaneously These results were supported by experimental work using Raman spectroscopy. The Raman spectra of the as-grown CIGS thin films show only the Al mode peak. The intensity of this peak was enhanced at higher deposition temperatures. Scanning electron microscopy (SEM) results revealed very small grains in films fabricated at 48$0^{\circ}C$ substrate temperature. When the substrate temperature was increased the average grain size also increased together with a reduction in the number and size of the voids. The deposition temperature also had a significant influence on the transmission spectra.

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Characterization of Cu(InGa)Se$_2$ Solar Cells with Se Evaporation Conditions (Se원소의 증발조건이 Cu(InGa)Se$_2$ 박막 태양전지 특성에 미치는 영향)

  • 김석기;이정철;강기환;윤경훈;박이준;송진수;한상옥
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2002.07a
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    • pp.383-386
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    • 2002
  • Polycrystalline Cu(In,Ga)Se$_2$(CIGS) thin-films were grown by co-evaporation on a soda lime glass substrate. In this paper the effects of the Se evaporation temperature on the properties of CuIn0.75Ga0.25Se2 (CIGS) thin films. Structure, surface morphology and optical properties of CIGS thin films deposited at various Se evaporation temperatures have been investigated using a number of analysis techniques. X-ray diffraction (XRD) analysis shows that CIGS films exhibit a strong <112> preferred orientation. As expected, at higher Se evaporation temperatures the films displayed a lower degree of crystallinity. The <112> peak was also enhanced and other CIGS peaks appeared simultaneously. These results were supported by experimental work using scanning electron microscopy When the Se evaporation temperature was increased, the average grain size also decreased together with a reduction Cu content. The Se evaporation temperature also had a significant inf1uence on the transmission spectra. Increasing the Se evaporation temperature, the cell efficiency was improved dramatically to 11.75% with Voc = 556 mV, Jsc = 32.17 mA/cm2 and FF = 0.66. The Se evaporation temperature is an important parameter in thin film deposition regardless of the deposition technique being used to deposit thin films

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