• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1997.04a
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• pp.289-292
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• 1997

BaTiO$_3$thin film capacitor were prepared on Pt(100)/SiO$_2$/Si(100)wafer by RF sputtering technique. Dielectric and electrical characteristics of the thin film capacitor are investigated. The Dielectric constant and loss were about 683 and 5[%], respectively. We found that the leakage current of thin film capacitor is depend on RF power during deposition. Because of increase of activation energy, leakage current inclosed at high RF power and sheet resistivity of the films was decreased. Swithching voltage of thin film capacitor was 4.4[V]

• The Journal of The Korea Institute of Intelligent Transport Systems
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• v.7 no.5
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• pp.97-105
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• 2008

The micro capacitors are passive elements necessary to electronic circuits and wireless portable PAN(personal area network) and Mobile Communications device modules in the baseband circuits in combination with another passive and active devices. As capacitance is proportionally increased with dielectric constant and electrode areas, in addition, inversely decreased the thickness of the dielectric material, thus thin film capacitors are generally seen as a preferable means to achieve high performance and thin film capacitors are used in a variety of functional circuit devices. In this paper, propose dielectric material as AIN(Aluminium nitride) to make micro thin film capacitor, and this capacitor has the MIM(metal-insulator-metal) structure. AIN thin films are widespread applied because they had more excellent properties such as chemical stability, high thermal conductivity, electrical isolation and so on. In addition, AIN films show low frequency response for baseband signal ranges, I-V and C-V electrical characterization of a thin film micro capacitor. The above experimental test and estimated results demonstrate that the thin film capacitor has sufficient and efficient functional performance to be the baseband range frequency of general electronics circuit and passive device applications.

• Electrical & Electronic Materials
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• v.9 no.4
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• pp.336-343
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• 1996

We have studied the preparation and the properties of $Ba_{1-x}$Sr$_{x}$TiO$_{3}$(BST) thin films by using the sol-gel method. Through the comparison of the effects of various solvents and additives in making solutions, we establish the production method of the stable solution which generates the high quality of BST film. We also set up the heat-treatment conditions for depositing the BST thin film through the TGA and XRD analyses. Through the comparison of the surface conditions of BST films deposited on Pt/Ta/SiO$_{2}$/Si and Pt/Ti/SiO$_{2}$/Si substrates, we find that Ta is more efficient diffusion barrier of Si than Ti so that Ta layer prevents the formation of hillocks. We fabricate the planar type capacitor and measure the dielectric properties of the BST thin film deposited on the Pt/Ta/SiO$_{2}$/Si substrate. Dielectric constant and dielectric loss tangent at 1V, 10kHz, and leakage current density at 3V of the BST thin film are 339, 0.052 and 13.3.mu.A/cm$^{2}$, respectively.ely.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.319-319
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• 2013

Even though the fabrication methods of metal oxide based thin film capacitor have been well established such as RF sputtering, Sol-gel, metal organic chemical vapor deposition (MOCVD), ion beam assisted deposition (IBAD) and pulsed laser deposition (PLD), an applicable capacitor of printed circuit board (PCB) has not realized yet by these methods. Barium Strontium Titanate (BST) and other high-k ceramic oxides are important materials used in integrated passive devices, multi-chip modules (MCM), high-density interconnect, and chip-scale packaging. Thin film multi-layer technology is strongly demanded for having high capacitance (120 nF/$mm^2$). In this study, we suggest novel multi-layer thin film capacitor design and fabrication technology utilized by plasma assisted deposition and photolithography processes. Ba0.6Sr0.4TiO3 (BST) was used for the dielectric material since it has high dielectric constant and low dielectric loss. 5-layered BST and Pt thin films with multi-layer sandwich structures were formed on Pt/Ti/$SiO_2$/Si substrate by RF-magnetron sputtering and DC-sputtering. Pt electrodes and BST layers were patterned to reveal internal electrodes by photolithography. SiO2 passivation layer was deposited by plasma-enhanced chemical vapor deposition (PE-CVD). The passivation layer plays an important role to prevent short connection between the electrodes. It was patterned to create holes for the connection between internal electrodes and external electrodes by reactive-ion etching (RIE). External contact pads were formed by Pt electrodes. The microstructure and dielectric characteristics of the capacitors were investigated by scanning electron microscopy (SEM) and impedance analyzer, respectively. In conclusion, the 0402 sized thin film multi-layer capacitors have been demonstrated, which have capacitance of 10 nF. They are expected to be used for decoupling purpose and have been fabricated with high yield.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.197-197
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• 2008

There are fast growing demands for new dielectric materials for passive capacitors of RF-ICs and other wireless applications. One of the bulk microwave dielectric materials which have superior properties is $ZrTiO_4$ due to its large dielectric constant and high quality factor. Therefore, $ZrTiO_4$ is worth studying as a form of thin film to be applied for passive capacitors of integrated circuits. In this study, we fabricated metal-insulator-metal type capacitors with $ZrTiO_4$ dielectric thin film, and evaluated their capacitor properties.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07a
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• pp.412-415
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• 2003

[ $Si_3N_4$ ] thin film is the good material to fabricate the capacitors at MMIC processes. Normally, $Si_3N_4$ thin films is used to dielectric in the MIM capacitor and film thickness is $2000\;{\AA}$. Insulator(or dielectric) was deposited by PECVD at our MIM structure with air bridge which connect between top metal and contact pad. We optimized PECVD process to fabricate the good capacitors which can be applied at the true MMIC. The thickness of our $Si_3N_4$ thin films was $1000\;{\AA}$ shallower than $2000\;{\AA}$, and their breakdown voltages were above 70V.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.660-663
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• 2001

The devices of BST thin films to composite (Ba$\_$0.7/ Sr$\_$0.3/)TiO$_3$using sol-gel method were fabricated by changing of the depositing layer number on Pt/Ti/SiO$_2$/Si substrate. The thin film capacitor to be ferroelectric devices was investigated by structural and electrical properties. The thickness of BST thin films at each coating numbers 3, 4 and 5 times was 2500[${\AA}$], 3500[${\AA}$], 3800[${\AA}$]. The dielectric factor of thin film when the coating numbers were 3, 4 and 5 times was 190, 400 and 460 on frequency 1[MHz]. The dielectric loss of BST thin film was linearly increased by increasing of the specimen area.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.14 no.12
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• pp.1001-1007
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• 2001

In this study, high dielectric materials, (Pb,La)Ti $O_3$ thin films were fabricated by PLD (Pulsed Laser Deposition) method and investigated in terms of structural and electrical characteristics in order to develope the dielectric materials for the use of new capacitor layers of Giga bit-level DRAM. The deposition conditions were examined in order to fabricate uniform thin films through systematic changes of oxygen pressures and substrate temperature. The uniform thickness and smooth morphology of (P $b_{0.72}$L $a_{0.28}$)Ti $O_3$ thin films were obtained at the conditions of substrate-target distance 5.5[cm], laser energy density 2.1[J/$\textrm{cm}^2$], oxygen pressure 200[mTorr] and substrate temperature 500[$^{\circ}C$]. After the (P $b_{0.72}$L $a_{0.28}$)Ti $O_3$ thin films were fabricated under the above conditions, they were post-annealed by RTA process in order to increase the dielectric constant. The film thickness of 1200 [$\AA$] had dielectric constant 821. Assuming that operating voltage is 2V, leakage current density of (P $b_{0.72}$L $a_{0.28}$)Ti $O_3$ thin films would result into 10$^{-7}$ [A/$\textrm{cm}^2$] and satisfied the specification of 256M DRAM planar capacitor, 4$\times$10$^{-7}$ [A/$\textrm{cm}^2$]m}^2$]

• Journal of Advanced Navigation Technology
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• v.16 no.6
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• pp.1038-1043
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• 2012

In this work, a high tunable capacitor using a multi-layer dielectric of BZN/BST/BZN is designed and characterized for reconfigurable RF applications. By utilizing a high tunable BST ferroelectric and a low-loss BZN paraelectric thin film, a multi-layer dielectric of BZN/BST/BZN obtained a tunability of 47 % and $tan{\delta}$ of 0.005. The fabricated tunable capacitor on a quartz wafer using this multi-layer dielectric achieved a Q-factor of 10 and tunability of 60 % at 800 MHz and 15 V. Its size is $327{\times}642{\mu}m2$.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2008.10a
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• pp.640-643
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• 2008

In this work, a novel tunable MIM capacitor with the meshed electrode is proposed first in order to improve the tunability characteristics using fringe fields. The capacitors were fabricated on a low-resistivity Si substrate employing lead zinc niobate (PZN) thin film dielectric. The fabricated capacitor with the meshed electrode, whose line width and spacing was $2.5{\mu}m$, achieved the effective capacitance tunability of 31 % that is higher value of 18.5 % than that of the conventional capacitor with the rectangular-type electrode.