• Title/Summary/Keyword: dielectric loss tangent

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Preparation and properties of BST (Barium Strontium Titanate) thin films for the capacitor dielectrics of ULSI DRAM's (ULSI DRAM의 capacitor 절연막용 BST(Barium Strontium Titanate)박막의 제작과 특성에 관한 연구)

  • 류정선;강성준;윤영섭
    • Electrical & Electronic Materials
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    • v.9 no.4
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    • pp.336-343
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    • 1996
  • We have studied the preparation and the properties of $Ba_{1-x}$Sr$_{x}$TiO$_{3}$(BST) thin films by using the sol-gel method. Through the comparison of the effects of various solvents and additives in making solutions, we establish the production method of the stable solution which generates the high quality of BST film. We also set up the heat-treatment conditions for depositing the BST thin film through the TGA and XRD analyses. Through the comparison of the surface conditions of BST films deposited on Pt/Ta/SiO$_{2}$/Si and Pt/Ti/SiO$_{2}$/Si substrates, we find that Ta is more efficient diffusion barrier of Si than Ti so that Ta layer prevents the formation of hillocks. We fabricate the planar type capacitor and measure the dielectric properties of the BST thin film deposited on the Pt/Ta/SiO$_{2}$/Si substrate. Dielectric constant and dielectric loss tangent at 1V, 10kHz, and leakage current density at 3V of the BST thin film are 339, 0.052 and 13.3.mu.A/cm$^{2}$, respectively.ely.

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Study of Dispersibility and Dielectric Properties in $SrTiO_3$/COP Composites as the kind/content of Dispersants (분산제의 종류와 함량에 따른 $SrTiO_3$/사이클로올레핀폴리머 복합재료의 분산성 및 유전특성에 대한 연구)

  • Kim, Jun-Young;Lee, Jin-Won;Yoo, Myong-Jae;Lee, Woo-Sung
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2008.06a
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    • pp.261-262
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    • 2008
  • 분산제의 종류와 함량이 무기물-유기물 복합재료의 레올로지 특성 및 유전특성에 미치는 영향에 대하여 고찰하였다. 먼저 Multiple light scattering 방법을 통하여 용액의 입자 이동속도와 용액의 맑은층의 두께변화를 살펴보았으며 이를 통해 적정한 분산제의 선정 및 선정된 분산제의 함량비에 따른 무기물 분말의 분산 특성을 고찰하였다. 그리고 테이프 캐스팅을 통하여 테이프를 제작한 후 1GHz에서 유전특성을 측정하였다. 위 결과들을 통하여 분산제의 종류와 함량비에 따라 용액 및 슬러리의 특성이 다르며 적정한 분산제를 사용하여 유전상수 16.5에 유전손실 0.0058의 복합재료를 제작할 수 있었다.

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Low-Temperature Sintering and Dielectric Properties of BaSn(BO3)2 Ceramics (BaSn(BO3)2세라믹스의 저온소결 및 유전특성)

  • Nam, Myung-Hwa;Kim, Hyo-Tae;Hwang, June-Cheol;Nam, Joong-Hee;Yeo, Dong-Hoon;Kim, Jong-Hee;Nahm, Sahn
    • Journal of the Korean Ceramic Society
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    • v.43 no.2 s.285
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    • pp.92-97
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    • 2006
  • Dolomite type $BaSn(BO_3)_2$ ceramics with rhombohedral crystal structure has been synthesized via solid state reaction route. Dielectric properties were measured for the samples sintered at $1050\~1200^{\circ}C$ for 2 h in air. Dielectric constant, loss tangent, and temperature coefficient were increased with sintering temperature due to the evolution of $BaSnO_3$, secondary, phase. Optimum dielectric properties were obtained at the $BaSn(BO_3)_2$ ceramics sintered at $1100^{\circ}C.\;CuO/Bi_2O_3$ was added to $BaSn(BO_3)_2$ ceramics to lower the sintering temperature for LTCC application, then Co and Fe-based coloring agents were added for colorizing the LTCC tape. Typical dielectric properties of $BaSn(BO_3)_2$ ceramics with $5 wt\%\;CuO/Bi_2O_3\;and\;3wt\%$ Co-coloring agent that sintered at $900^{\circ}C$ were $\varepsilon_r=9.89,\;tan{\delta}=0.92\times10^{-3},\;and\;TCC=112ppm/^{\circ}C$. Thus obtained LTCC tape was co-fired with Ag paste for compatibility test and revealed no sign of Ag reaction with the ceramics.

Dielectric and Electrical Characteristics of Lead-Free Complex Electronic Material: Ba0.8Ca0.2(Ti0.8Zr0.1Ce0.1)O3

  • Sahu, Manisha;Hajra, Sugato;Choudhary, Ram Naresh Prasad
    • Korean Journal of Materials Research
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    • v.29 no.8
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    • pp.469-476
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    • 2019
  • A lead-free bulk ceramic having a chemical formula $Ba_{0.8}Ca_{0.2}(Ti_{0.8}Zr_{0.1}Ce_{0.1})O_3$ (further termed as BCTZCO) is synthesized using mixed oxide route. The structural, dielectric, impedance, and conductivity properties, as well as the modulus of the synthesized sample are discussed in the present work. Analysis of X-ray diffraction data obtained at room temperature reveals the existence of some impurity phases. The natural surface morphology shows close packing of grains with few voids. Attempts have been made to study the (a) effect of microstructures containing grains, grain boundaries, and electrodes on impedance and capacitive characteristics, (b) relationship between properties and crystal structure, and (c) nature of the relaxation mechanism of the prepared samples. The relationship between the structure and physical properties is established. The frequency and temperature dependence of the dielectric properties reveal that this complex system has a high dielectric constant and low tangent loss. An analysis of impedance and related parameters illuminates the contributions of grains. The activation energy is determined for only the high temperature region in the temperature dependent AC conductivity graph. Deviation from the Debye behavior is seen in the Nyquist plot at different temperatures. The relaxation mechanism and the electrical transport properties in the sample are investigated with the help of various spectroscopic (i.e., dielectric, modulus, and impedance) techniques. This lead free sample will serve as a base for device engineering.

Dielectric Properties of Semi-IPN Poly(phenylene oxide) Blend/$BaTiO_3$ Composites with Type of Cross-linker (가교체 종류에 따른 Semi-IPN Poly(phenylene oxide) 블렌드와 $BaTiO_3$ 복합재료의 유전특성)

  • Jang, Yong-Kyun;Lee, Ho-Il;Seong, Won-Mo;Park, Sang-Hoon;Yoon, Ho-Gyu
    • Polymer(Korea)
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    • v.33 no.3
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    • pp.224-229
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    • 2009
  • The dielectric properties of semi-IPN poly(phenylene oxide)(PPO) blend/$BaTiO_3$(BT) composites are investigated. The composites are fabricated via melt-mixing of crosslinker and peroxide in precursor PPO composite obtained by precipitating the suspension consisted of PPO, BT and toluene into methylethyl ketone, poor solvent of PPO. The permittivity of the precursor PPO composites shows higher value than that of integral-blended PPO composites by extruder and coincides with the theoretical value calculated by logarithmic rule of mixture. The blend of PPO and cross-linked triallyl isocyanurate is most effective for lowering the permittivity and loss tangent owing to the suppression of the orientation polarization of matrix. In contrast, 4,4'-(1,3-phenylene diisopropylidene) bisaniline, which has amine unit in its structure, increases the permittivity as well as loss tangent of the composite, but it has the ability to densify the matrix resin and the interfacial adhesion between the matrix and filler to improves flexural strength and modulus.

Study for Fabrication of Dielectric Thick Films with Low Dielectric Constant and Low Loss Tangent Grown by Aerosol Deposition Method at Room Temperature (에어로졸 데포지션법에 의한 저유전율, 저손실 유전체 후막의 상온 증착 공정에 대한 연구)

  • Park, J.C.;Yoon, Y.J.;Kim, H.T.;Koo, E.H.;Nam, S.M.;Kim, J.H.;Shim, K.B.
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2008.11a
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    • pp.210-210
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    • 2008
  • 에어로졸 증착법은 상온에서 다양한 기판 상에 고밀도의 세라믹 후막을 코팅할 수 있는 최신 기술로써 다양한 방면으로의 응용이 개대되고 있다. 본 실험에서는 ADM을 이용하여 고주파수 영역에서 사용가능한 기판소재 제조에 관한 연구를 진행하였다. ADM을 통해 형성된 $Al_2O_3$ 막의 유전율은 9-10으로 bulk 시료와 비슷한 특성을 보였으나 후막의 손실률의 경우는 bulk 시료에 비해 상당히 컸으며 주파수 증가에 따라 그 값이 크게 감소하는 경향을 보였다. 본 실험에서는 ADM으로 형성된 $Al_2O_3$의 높은 손실률의 원인에 대해 고찰하고 ADM 을 통해 기판소재로 사용가능한 저손실의 $Al_2O_3$막의 제조를 위한 방법을 제시하고자 하였다.

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Internal Hook-shaped Patch Antenna for Multiband Wireless USB Dongle Applications (다중대역 무선 USB 동글용 내장 Hook형 안테나)

  • Jeong, Seong-Jae;Hwang, Keum-Cheol;Shin, Jae-Ho
    • Journal of the Institute of Electronics Engineers of Korea TC
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    • v.47 no.11
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    • pp.91-96
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    • 2010
  • In this paper, an internal USB dongle antenna with a circular hook-shaped patch is proposed. The proposed antenna comprises of a circular hook-shaped patch and a monopole stub. The proposed antenna with the dimension of $10mm{\times}50mm{\times}0.8mm$ was fabricated on commercial FR-4 substrate with a dielectric constant of 4.6 and tangent loss of 0.025. The designed antenna exhibits three different resonant bandwidths, 2.4 GHz-2.5 GHz, 3.4 GHz-3.6 GHz, and 5.15 GHz-5.825 GHz. The measured radiation patterns are omni-directional at measured frequencies. Therefore, the proposed antenna is suitable for wireless USB dongle antenna that can support multiband wireless services such as WLAN, WiMAX and Bluetooth.

A study on the fabrication and characteristics of plasma Polymerized hexamethyldisiloxane thin films (플라즈마중합 헥사메틸디실록산 박막의 제조 및 특성에 관한 연구)

  • Lee, S.H.;Lee, B.S.;Park, S.H.;Lee, N.H.;Kim, J.S.;Woo, H.W.;Lee, D.C.
    • Proceedings of the KIEE Conference
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    • 1997.07d
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    • pp.1540-1542
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    • 1997
  • Plasma polymerized thin films were fabricated by interelectrode capacitively coupled type apparatus. FT-IR analyses indicated that the thin film spectra are composed not only of the corresponding monomer bands but also of several new bands. Relative dielectric constant and dielectric loss tangent of thin films fabricated in the discharge power of 90[W] showed $3.212{\sim}3.805$ and $0.0026{\sim}0.0451$ in alternating frequency of $10^3{\sim}10^6$[Hz]. Contact angle measurement indicated that cross-link of the films is increased with the discharge power.

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Screen Printed ZnBO Doped (Ba,Sr)TiO3 Thick Film Planner Capacitors (스크린 프린팅 기법으로 제작된 ZnBO 첨가 (Ba,Sr)TiO3 Planner Capacitor 특성 분석)

  • Moon, Sang-Ho;Koh, Jung-Hyuk
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.22 no.9
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    • pp.724-727
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    • 2009
  • We have fabricated (Ba,Sr)TiO3$TiO_3$ thick films doped with various amount of ZnBO dopants (1, 3, and 5 wt%) by screen printing method on the alumina substrates, which were sintered at the temperature below $1200^{\circ}C$. With increasing the amount of ZnBO dopants, the relative dielectric permittivity of ZnBO doped (Ba,Sr)$TiO_3$ was decreased, while loss tangent was increased. 1 wt% ZnBO doped (Ba,Sr)$TiO_3$ thick film has relative dielectric permittivity of 759 at 1 MHz, while 3 and 5 wt% of ZnBO doped (Ba,Sr)$TiO_3$ thick films have 624 and 554, respectively. By introducing ZnBO dopants to the (Ba,Sr)$TiO_3$ thick films, leakage current densities were decreased. The decreased leakage current with increasing ZnBO dopants can be explained by increased density and grain size of thick film on alumina substrate. We believe this decreased leakage current density probably come from the increased grain size and increased density.

Design and Manufacture of LTE3G / WLAN/ LTE4G Tri-band Antenna System for Mobile Communication Applications

  • Bayarmaa., O;Hong, Yong Pyo;Kim, Kab Ki
    • International journal of advanced smart convergence
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    • v.4 no.2
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    • pp.29-33
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    • 2015
  • In this paper, we propose the method to improve the performance of the antenna system that contains three bands, such as Lte3G, WLAN and Lte4G. This antenna has an advantage that can cover the three different frequency bands 2.1GHz, 2.4GHz and 2.6GHz through one antenna design. The design and simulations are done using CST Microwave Studio 2014 program. The antenna is designed by using the FR-4 (lossy) substrate with the dielectric constant of er=4.3 and dielectric loss tangent 0.025. The substrate dimensions are the following; Thickness[h] is 1.6mm, Length is 90mm, and Width is 40mm. The ground is designed by using the PEC material with h=0.035mm. The patch is designed by using the copper with h=0.035mm. In the near future, we will fabricate the antenna, which we have designed, and then apply this antenna to the mobile communication system. And we will test this mobile communication system for the diverse environments.