• 제목/요약/키워드: dielectric effect

검색결과 1,364건 처리시간 0.031초

이동 통신용 $BiNbO_4$ 세라믹스의 CuO 및 CdO 첨가량에 따른 고주파 유전 특성 (Effect of CuO and CdO Additions on the Microwave Dielectric Properties of $BiNbO_4$ Ceramics using Mobile Communication)

  • 윤중락;이헌용;김경용
    • 한국재료학회지
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    • 제8권11호
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    • pp.1043-1047
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    • 1998
  • CuO 및 C얘의 첨가가 $BiNbO_4$ 세라믹스의 고주파 유전특성에 미치는 영향을 조사하였다. CdO 첨가량이 증가함에 따라 소결밀도 및 품질계수는 감소하였고 소결온도가 증가하면 유전상수 및 품질계수는 증가하였다. $BiNbO_4$에 CuO 및 CdO를 각각 0.03wt% 첨가한 시편을 $960^{\circ}C$에서 소결시 유전율 41.2, 품질계수($Q{\times}f_0$) 6,500(at 5.6GHz), 공진주파수 온도계수 $3ppm^{\circ}C$의 우수한 고주파 유전특성을 얻을 수 있었다.

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PMWN-PZT계 압전세라믹의 압전 및 유전 특성 (Characteristics of Piezoelectric and Dielectric of PMWN-PZT Ceramics)

  • 홍종국;이종섭;채홍인;윤만순;정수현;임기조
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2000년도 추계학술대회 논문집
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    • pp.188-191
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    • 2000
  • The properties of piezoelectric and dielectric for 0.05Pb(Mn$\_$0.4/W$\_$0.2/Nb$\_$0.4/)O$_3$ - 0.95PbZr$\_$x/Ti$\_$1-x/O$_3$ compositions have been investigated. In the composition of 0.05Pb(Mn$\_$0.4/W$\_$0.2/Nb$\_$0.4/)O$_3$ - 0.95PbZr$\_$0.51/Ti$\_$0.49/O$_3$, the values of k$\_$p/ and $\varepsilon$$\_$33/$\^$T// $\varepsilon$$\_$0/ are maximized, but Q$\_$m/ was minimized (k$\_$p/=56.5[%], Q$\_$m/=1130, d$\_$33/=258[pC/N], $\varepsilon$$\_$33/$\^$T// $\varepsilon$$\_$0/=1170). The grain size was suppressed and the uniformity of grain was improved at the 1100[˚C]. Also, we can see the dielectric constants variations between the before poling and after poling. This effect results from the effect(increase element of dielectric constants) between dipole switching and electrostriction inducing stress and dipole direction to the poling orientation(decrease element of dielectric constants). At x=0.51, we can find MPB(morphotropic phase boundary).

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거칠기에 따른 반도전-절연 계면층에서 접착특성과 절연성능 (Adhesion and Electrical Performance by Roughness on Semiconductive-Insulation Interface Layer of Silicone Rubber)

  • 이기택;황선묵;홍주일;허창수
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2004년도 하계학술대회 논문집 Vol.5 No.1
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    • pp.78-81
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    • 2004
  • In this paper, the effect of adhesion properties of semiconductive-insulating interface layer of silicone rubber on electrical properties was investigated. Surface structure and adhesion of semiconductive silicon rubber by surface asperity was obtained from SEM and T-peel test. In addition, ac breakdown test was carried out for elucidating the change of electrical property by roughness treatment. From the results, Adhesive strength of semiconductive-insulation interface was increased with surface asperity. Dielectric breakdown strength by surface asperity decreased than initial Specimen, but increased from Sand Paper #1200. According to the adhesional strength data unevenness and void formed on the silicone rubber interface expand the surface area and result in improvement of adhesion. Before treatment Sand Paper #1200, dielectric breakdown strength was decreased by unevenness and void which are causing to have electric field mitigation small. After the treatment, the effect of adhesion increased dielectric breakdown strength. It is found that ac dielectric breakdown strength was increased with improving the adhesion between the semiconductive and insulating interface.

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Effect of Sintering Temperature on Structural and Dielectric Properties of (Ba0.54Sr0.36Ca0.10)TiO3 Thick Films

  • Noh, Hyun-Ji;Lee, Sung-Gap;Nam, Sung-Pill;Lee, Young-Hie
    • Transactions on Electrical and Electronic Materials
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    • 제10권2호
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    • pp.49-52
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    • 2009
  • Barium strontium calcium titanate powders were prepared with the sol-gel method. Ferroelectric $(Ba_{0.54}Sr_{0.36}Ca_{0.1})TiO_3$(BSCT) thick films were fabricated by the screen-printing method on alumina substrate. Then we investigated the structural and dielectric properties of the BSCT thick films at different sintering temperatures. The thermal analysis showed that the BSCT polycrystalline perovskite phase formed at around $660^{\circ}C$. The X-ray diffraction analysis showed a cubic perovskite structure with no second phase present in all of the BSCT thick films. The average grain size and the thickness of the specimens sintered at $1450^{\circ}C$ were about $1.6{\mu}m$ and $45{\mu}m$, respectively. The relative dielectric constant increased and the dielectric loss decreased as the sintering temperature was increased; for BSCT thick films sintered at $1450^{\circ}C$ the values of the dielectric constant and the dielectric loss were 5641 and 0.4%, respectively, at 1 kHz.

Dielectric Study of Allyl Chloride with 2-Pentanone and 2-Hexanone in Microwave Frequency Range

  • Sudake, Yuvraj;Kamble, Siddharth;Maharolkar, Aruna;Patil, Sunil;Khirade, Prakash;Mehrotra, Suresh
    • Bulletin of the Korean Chemical Society
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    • 제33권10호
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    • pp.3423-3426
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    • 2012
  • Dielectric measurement on binary mixtures of Allyl chloride (ALC) with 2-Pentanone (2-PE) and 2-Hexanone (2-HE) has been carried out over the entire concentration range using Time Domain Reflectometry (TDR) technique at various temperatures in microwave frequency range of 10 MHz to 10 GHz. The static dielectric constant, excess static dielectric constant (${\varepsilon}^E_S$), effective Kirkwood correlation factor ($g^{eff}$) of binary mixtures over entire concentration range were determined to study the effect of increasing alkyl group of ketones on hetero molecular interaction. It was found that magnitude of excess static dielectric constant of mixtures increases with increase of alky group of ketones. The study reveals that the dipole moment of Allyl chloride in mixture have antiparallelism tendency where as 2-pentanone and 2-hexanone have parallelism tendency. Excess static dielectric constant is also fitted to Redlich-Kister equation to get information about rates of multimers formation.

Triple-Mode Characteristics of Cylindrical Cavity Loading a Cylindrical Dielectric Resonator

  • Lee, Seung-Mo;Kim, Cha-Man;Park, Jong-Chul;Kim, In-Ryeol;Oh, Soon-Soo
    • 한국정보전자통신기술학회논문지
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    • 제9권6호
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    • pp.630-636
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    • 2016
  • In this paper, a novel triple-mode cavity structure, designed for compactness and operating at 850 MHz, is analyzed. A cylindrical dielectric resonator is loaded into a metallic cylindrical cavity. Previous study has been focused on the analysis of the cylindrical dielectric resonator, but in this paper, the effect of the cylindrical metallic cavity has been analyzed. Enclosing the dielectric resonator inside the metallic cavity increases the resonant frequency of the dielectric resonator; however, this increases the quality factor and introduces the possibility of installing coupling screws. The principle of generation of triple-mode was investigated by parametric analysis. The generated triple-mode is TE011 mode and two orthogonally generated HEM121 modes. By adjusting the radius of the dielectric resonator, the height of the dielectric resonator, or the radius of the cylindrical metallic cavity, three modes could be coincided. However, the height of the metallic cavity keeps three modes separated. The mode characteristics of the proposed cavity are analyzed using a full-wave electromagnetic (EM) simulation. The proposed triple-mode cavity could be developed to triple-mode filter using a coupling screw, and the commercial application for the miniaturized filter below 1 GHz could be expected.

정어리 마쇄육의 저수분에서의 유전적 특성 2. 전분함량과 온도에 따른 유전특성 (Dielectric Properties of Sardine-Starch Paste at Low Moisture Content 2. Effect of Starch Contents and Temperatures)

  • 이병호;김장양;이강호
    • 한국수산과학회지
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    • 제16권3호
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    • pp.247-254
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    • 1983
  • In previous paper (Lee and Kim, 1983) the effect of moisture level and frequency on dielectric properties of sardine starch paste was mentioned. The effect of temperature and starch content of the paste upon dielectric permittivity and activation energy was discussed in this report. Addition of starch affected on dielectric property. Increases of starch in the mixtures resulted in higher complex permittivity and lower critical moisture content (hc) as shown in the mixtures with $20\%$ and $50\%$ starch which were ${\varepsilon}^{\ast}=2.97+j0.36,\;hc=8.0\%;\;{\varepsilon}^{\ast}=3.54+j0.44,\;hc=7.8\%$, respectively while being ${\varepsilon}^{\ast}=2.73+j0.29,\;hc=8.4\%$ for the plain ground sardine meat. When temperature was raised the complex permittivity tended to increase at above the critical moisture content in all cases. The activation energies for plain ground meat and $30\%$ starch added mixture at below the critical moisture of $8.4\%$ were 15.44 kcal/mol and 13.86 kcal/mol while those at the moisture of $12.2\%$ were 10.27 kcal/mol and 9.31 kcal/mol, respectively.

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The Thickness Dependence of Edge Effect in Thin Insulating Films

  • Song Jeong-Myen;Moon Byung-Moo;Sung Yung-Kwon
    • Transactions on Electrical and Electronic Materials
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    • 제4권4호
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    • pp.13-17
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    • 2003
  • This paper deals with the edge effect in thin insulating films, focusing on their dependence on film thickness. The finding is that the electric field is lowered at the edge as the film thickness is reduced, which, in turn, is closely related to dielectric breakdown voltage. In order to analyze this phenomenon, a simple capacitor model is introduced with which dependence of dielectric breakdown voltage around the electrode edge on the film thickness is explained. Due to analytical difficulty to get the expression of electrical field strength at the edge, an equivalent circuit approach is used to find the voltage expression first and then the electric field expression using it. The relation gets to an agreement with the experimental findings shown in the paper. This outcome may be extended to solve similar problems in multi-layer insulating films.

Air stable n-type organic field effect transistors using a perfluoropolymer insulator

  • Jang, Jun-Hyuk;Kim, Ji-Whan;Park, Noh-Hwal;Kim, Jang-Joo
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2008년도 International Meeting on Information Display
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    • pp.276-279
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    • 2008
  • Air stable n-type organic field effect transistors (OFETs) based on CB60B are realized using a perfluoropolymer as the gate dielectric layer. The devices showed the field-effect mobility of $0.05\;cm^2P/V\;s$ in ambient air. Replacing the gate dielectric material by $SiO_2$ resulted in no transistor action in ambient air. Perfluorinated gate dielectric layer reduces interface traps significantly for the n-type semiconductor even in ambient air.

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Pb($Zr_{0.52}Ti_{0.48}$)$O_3$ 세라믹스의 유전이력 특성에 미치는 $MnO_2$의 영향 (Effect of $MnO_2$ on the Dielectric Hysteresis Loop Characteristics of Pb($Zr_{0.52}Ti_{0.48}$)$O_3$ Ceramics)

  • 김종선;최병현;이종민;윤기현
    • 한국세라믹학회지
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    • 제28권4호
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    • pp.297-304
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    • 1991
  • Dielectric hysteresis characteristics of Pb(Zr0.52Ti0.48)O3 ceramics have been investigated as a function of the amount of MnO2 addition ranged from 0.0 wt% in Pb(Zr0.52Ti0.48)O3 ceramics enhanced the dielectric strength, aging effect and remanent polarization, while reduced the coercive field. These results could be explained by the effect of Mn-Vo association due to the substitution of Mn for the (Zr, Ti) site in PZT.

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