• The Transactions of the Korean Institute of Electrical Engineers C
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• v.51 no.9
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• pp.413-416
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• 2002

It was reported that low temperature plasma developed by our group was apparently homogeneous and stable at atmospheric pressure, and was generated if the alumina was used as a dielectric insulating material and Ar gas as a plasma gas. This is a structure in which the dielectric materials are covered and arranged in parallel in the one side of electrode. In this experiment, we discovered that dielectric material was important to generate normal electric discharge. To examine the effect of dielectric material on the electric discharge characteristic, the voltage and current of the plasma was measured and the electrical effect of dielectric material was examined. Also, it was applied to an etching of tin oxide films.

• Journal of the Korean Ceramic Society
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• v.17 no.3
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• pp.129-132
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• 1980

The effect of the additive on the dielectric property of TiO2 containing 0-2.5 wt. % ZnO was investigated as a function of frequency $5$\times$10^4$ to $6.3$\times$10^7$ cps and temperature from 25 to 375$^{\circ}C$. The dielectric constant decreased due to increasing density and grain size effect with increasing ZnO concentration.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1997.11a
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• pp.109-111
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• 1997

In this paper, we have evaluated temperature, electric field, Pressure dependency and dielectric properties of EPDM XLPE and EPDM/XLPE\`s interface. Temperature dependency of EPDM had great influence with dielectric properties, but pressure and applied voltage of EPDM had no effect on dielectric properties. Dielectric properties of XLPE were influenced by not only temperature but also pressure and applied voltage. We knowed that dielectric properties of EPDM/XLPE were trended toward tendency of those of EPDM

• Journal of the Korean Vacuum Society
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• v.18 no.6
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• pp.435-439
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• 2009

The reason of lowering the dielectric constant of SiOC film was studied using parameters obtained from C-V measurement and refractive index. SiOC film was formed by the force of ionic bonding during the recombination of dissociated gases. Generally, the dielectric constant was obtained from the square of the refractive index or C-V measurement using the metal/insulator/Si structure. The dielectric constant consists of the ionic and electronic elements. It was researched about the dielectric constant of SiOC film using the average of the ionic and electronic elements. The dielectric constant decreased after annealing process. As deposited films trended toward the dielectric constant consisted of most ionic elements, on the other hand, annealed films mostly consisted of electronic elements. Because the effect of ionic elements reduced after annealing. Consequently, it was found that the electronic effect of SiOC film increased and the ionic effect of SiOC film decreased by the after-annealing.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1997.04a
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• pp.245-248
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• 1997

The dielectric resonators(DRs) with dielectric properties are widely used in microwave integrated circuit(MICs) and monolithic microwave integrated circuits(MMICS). The variational method as numerical simulation scheme would be applied to calculate the resonant frequencies(fr) and Q-factors of microwave dielectric resonators. The dielectric resonator with a cylindrical “puck” structure of high dielectric material is modeled in this simulation. The parameters, such as the diameter, the height, and the dielectric constant of dielectric resonator, would determine the resonant frequency and the Q-factor. The relationship between these parameters would effect each other to evaluate the approximate resonant frequency. This simulation method by the variational formula is very effective to calculate fr, and Q-factor. in high frequency microwave dielectric resonator The error rate of the simulation results and the measured results would be considered to design the microwave dielectric resonators.

• Macromolecular Research
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• v.17 no.9
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• pp.646-650
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• 2009

We report the fabrication of pentacene organic field-effect transistors (OFETs) using a fluorinated styrene-alt-maleic anhydride copolymer gate dielectric, which was prepared from styrene derivatives with a fluorinated side chain [$-CH_2-O-(CH_2)_2-(CF_2)_5CF_3$] and maleic anhydride through a solution polymerization technique. The fluorinated side chain was used to impart hydrophobicity to the surface of the gate dielectric and maleic anhydride was employed to improve its wetting properties. A field-effect mobility of 0.12 cm$^2$/Vs was obtained from the as-prepared top-contact pentacene FETs. Since various functional groups can be introduced into the copolymer due to the nature of maleic anhydride, its physical properties can be manipulated easily. Using this type of copolymer, the performance of organic FETs can be enhanced through optimization of the interfacial properties between the gate dielectric and organic semiconductor.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.40 no.4
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• pp.54-59
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• 2003

In this paper, a cylindrical dielectric antenna with dielectric clad is designed and analyzed. Design parameters of a cylindrical dielectric resonator antenna are calculated from the wave equation of cylindrical dielectric. The variations of characteristics of the antenna are analyzed as varying the thickness and the relative permittivity of its clad. From the results, when the ratio of the outside radius of the dielectric clad to the radius of the cylindrical dielectric is 1.3 and the relative permittivity of the dielectric clad is one-third of the cylindrical dielectric resonator antenna, the relative bandwidth of the antenna is 49%, which is improved by 2.3 times than the cylindrical dielectric resonator antennas. However, the thickness and the relative permittivity of the dielectric clad have not effect on the radiation pattern, beamwidth and gain of the antenna.

• 한국정보디스플레이학회:학술대회논문집
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• 2005.07b
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• pp.1248-1251
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• 2005

In PDP, a transparent dielectric is formed on a front glass substrate so as to cover bus electrodes (Ag). During the fabrication process, sometimes, a transparent dielectric reacts with bus (Ag) electrode in the range of $560-600^{\circ}C$, and the reaction gives the dielectric its yellow coloration, what is called "yellowing phenomena". In this paper, we investigated the reaction between bus electrode and transparent dielectric covered with different frit content in Ag paste.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07a
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• pp.119-122
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• 2003

This paper describes characteristics for insertion losses of Isolator have an effect on material parameter. One purpose of the paper is to present insertion loss on this resonator for magnetic loss, dielectric loss, magnetic field and saturation magnetization. Another is to study the effect of propeller resonator on response characteristics. In this paper, the analysis and measurement of the response characteristics were carried out for the isolator prototype. The measurement results agreed on the simulation results and acquire insertion loss $0.18\;{\sim}\;0.24dB$, return loss 27dB, isolation 27dB and bandwidth 500MHz on this condition saturation magnetization 550G, dielectric loss 0.0004, magnetic loss 20 and dielectric constant 14.

• Journal of the Korean Ceramic Society
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• v.31 no.8
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• pp.841-848
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• 1994

The sintering behavior of La-modified PbTiO3 ceramics was investigated in order to improve the poor sinterability of PbTiO3. Addition of La improved the sinterability. It was confirmed that this improvement was due to the decrease in tetragonality ratio c/a of crystal lattice. The variations of dielectric constant and pyroelectric coefficient were measured with temperature. It was observed that with the increase of La content, Curie temperature decreased and dielectric constant at room temperature increased. La-modified PbTiO3 ceramics had smaller pyroelectric figure of merits than those of pyroelectric materials in use. The effects of grain size on dielectric and pyroelectric properties were also investigated. The change of grain size had effect on maximum dielectric constant and pyroelectric coefficient, but is had little effect on pyroelectric figure of merit at room temperature. The closer examination near ferro-paraelectric phase transition temperature revealed that the behavior of phase transition approached a more relaxor character with the increase of La content and the decrease of grain size.