• 폴리머
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• 제32권1호
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• pp.90-93
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• 2008

암 치료의 보조요법의 하나로 제시될 수 있는 전자파를 이용한 온열치료법의 기초연구를 수행하였다. 폴리에틸렌, 탈이온수, 그리고 염화나트륨 등으로 구성되는 젤리형의 인체 뇌 팬텀을 제작하고 이들 팬텀 재료의 다양한 구성비에 따른 팬텀의 전기적 특성을 유전율상수와 전도도를 측정하여 평가하였다. 그 결과, 염화나트륨의 양이 증가함에 따라 팬텀의 도전율이 증가하는 것을 제외하고는 팬텀 재조에 사용한 재료의 함량이 증가할수록 팬텀의 전기적 특성 값들은 대체로 감소함을 확인하였다. 또한 시간 경과에 따른 무게비로 측정한 팬텀의 장기안정성은 6개월이 경과한 시점까지도 양호하게 유지됨을 알 수 있었다. 이러한 연구 결과는 향후 각종 인체장기에 대응하는 자성유체가 혼입된 젤리팬텀의 전자기적 특성과 온도 상승을 관찰함으로써 암 치료에 있어서의 새로운 방법론을 제시할 수 있을 것으로 기대된다.

• 한국축산식품학회지
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• 제35권5호
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• pp.703-706
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• 2015

The interaction of plasma with liquid generates nitrogen species including nitrite (NO⁻₂). Therefore, the color developing capacity of plasma-treated water (PTW) as a nitrite source for meat curing was investigated in this study. PTW, which is generated by surface dielectric barrier discharge in air, and the increase of plasma treatment time resulted in increase of nitrite concentration in PTW. The PTW used in this study contains 46 ppm nitrite after plasma treatment for 30 min. To evaluate the effect of PTW on the cured meat color, meat batters were prepared under three different conditions (control, non-cured meat batter; PTW, meat batter cured with PTW; Sodium nitrite, meat batter cured with sodium nitrite). The meat batters were vacuum-packaged and cooked in a water-bath at 80℃ for 30 min. The typical color of cured meat developed in cooked meat batter treated with sodium nitrite or PTW. The lightness (L*) and yellowness (b*) values were similar in all conditions, whereas, the redness (a*) values of cooked meat batter with PTW and sodium nitrite (p<0.05) were significantly higher than the control. These data indicate that PTW can be used as a nitrite source in the curing process of meat without addition of other nitrite sources.

• 한국응용과학기술학회지
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• 제24권1호
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• pp.54-60
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• 2007

이 논문에서는 게이트 절연막 위에 vapor deposition polymerization(VDP)방법을 사용하여 성막한 유기 점착층을 진공 열증착하여 유기 박막 트랜지스터(OTFTs)소자를 제작할 수 있음을 증명하였다. 우리가 제작한 Staggered-inverted top-contact 구조를 사용한 유기 박막 트랜지스터는 전기적 output 특성이 포화 영역안에서는 포화곡선을, triode 영역에서는 비선형적인 subthreshold를 확실히 볼 수 있음을 발견했다. $0.2{\mu}m$ 두께를 가진 게이트 절연막위에 유기 점착층을 사용한 OTFTs의 장 효과 정공의 이동도와 문턱전압, 그리고 절멸비는 각각, 약 0.4cm2/Vs, -0.8V, 106 이 측정되었다. 게이트 절연막의 점착층으로써 폴리이미드의 성막을 위해, 스핀코팅 방법 대신 VDP 방법을 도입하였다. 폴리이미드 고분자막은 2,2bis(3,4-dicarboxyphenyl)hexafluoropropane dianhydride(6FDA)와 4,4'-oxydianiline(ODA)을 고진공에서 동시에 열 증착 시킨 후, 그리고 $150^{\circ}C$에서 1시간, 다시 $200^{\circ}C$에서 1시간 열처리하여 고분자화된 막을 형성하였다. 그리고 점착층이 OTFTs의 전기적 특성에 주는 영향을 설명하기 위해 비교 연구하였다.

• 한국마이크로전자및패키징학회:학술대회논문집
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• 한국마이크로전자및패키징학회 2001년도 Proceedings of 6th International Joint Symposium on Microeletronics and Packaging
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• pp.35-43
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• 2001

Flip chip assembly on organic substrates using ACAs have received much attentions due to many advantages such as easier processing, good electrical performance, lower cost, and low temperature processing compatible with organic substrates. ACAs are generally composed of epoxy polymer resin and small amount of conductive fillers (less than 10 wt.%). As a result, ACAs have almost the same CTE values as an epoxy material itself which are higher than conventional underfill materials which contains lots of fillers. Therefore, it is necessary to lower the CTE value of ACAs to obtain more reliable flip chip assembly on organic substrates using ACAs. To modify the ACA composite materials with some amount of conductive fillers, non-conductive fillers were incorporated into ACAs. In this paper, we investigated the effect of fillers on the thermo-mechanical properties of modified ACA composite materials and the reliability of flip chip assembly on organic substrates using modified ACA composite materials. Contact resistance changes were measured during reliability tests such as thermal cycling, high humidity and temperature, and high temperature at dry condition. It was observed that reliability results were significantly affected by CTEs of ACA materials especially at the thermal cycling test. Results showed that flip chip assembly using modified ACA composites with lower CTEs and higher modulus by loading non-conducting fillers exhibited better contact resistance behavior than conventional ACAs without non-conducting fillers. Microwave model and high-frequency measurement of the ACF flip-chip interconnection was investigated using a microwave network analysis. ACF flip chip interconnection has only below 0.1nH, and very stable up to 13 GHz. Over the 13 GHz, there was significant loss because of epoxy capacitance of ACF. However, the addition of $SiO_2filler$ to the ACF lowered the dielectric constant of the ACF materials resulting in an increase of resonance frequency up to 15 GHz. Our results indicate that the electrical performance of ACF combined with electroless Wi/Au bump interconnection is comparable to that of solder joint.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
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• pp.76-76
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• 2008

The resonance properties due to the surface plasmon(SP) excitation of metal nanoparticles make the nanocomposite films promising for various applications such as optical switching devices. In spite of the well-known ultra-sensitive operation of optical switches based on a guided wave, the application of nanocomposite film(NC) has inherent limitation originating from the excessive optical loss related with the surface plasmon resonance(SPR). In this study, we addressed this problem and present the experimental and theoretical analysis on the pump-probe optical switching in prism-coupled Au(1 vol.%):$SiO_2$ nanocomposite waveguide film. The guided mode was successfully generated using a near infrared probe beam of 1550 nm and modulated with an external pump beam of 532 nm close to the SPR wavelength. We extend our approach to ultra-fast operation using a pulsed laser with 5 ns pulse width. To improve the switching speed through the reduction in thermal loading effect accompanied by the resonant absorption of pump beam light, we adopted a metallic film as a coupling layer instead of low-index dielectric layer between the high-index SF10 prism and NC slab waveguide. We observed great enhancement in switching speed for the case of using metallic coupling layer, and founded a distinct difference in origin of optical nonlinearities induced during switching operation using cw and ns laser.

• 한국전기전자재료학회논문지
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• 제29권12호
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• pp.764-768
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• 2016

To investigate excess $Na^+$ effect, $Bi_{0.5}(Na_{0.78+x}K_{0.22})_{0.5}TiO_3$ ($0{\leq}x{\leq}0.05$) (BNKT) ceramics were prepared by using a conventional solid-state reaction method. The structure and ferroelectric properties of BNKT ceramics were characterized by XRD (X-ray diffraction) and polarization dependence by external electric field. Also, the temperature dependence of dielectric constant and loss were studied. From these results, it was found that appropriate excess $Na^+$ into BNKT ceramics compensate the volatility and induce dense ceramics. The enhanced piezoelectric coefficient (158 pC/N) and depolarization temperature ($202^{\circ}C$) were obtained for the x=0.01 composition.

• Korean Chemical Engineering Research
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• 제45권4호
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• pp.356-363
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• 2007

전계발광(EL) 소자 제조용 액상 페이스트 용액의 안정성은 사용한 안정화제의 종류 및 첨가량에 크게 영향을 받았으며, 본 실험에서 사용한 안정화제 중에서 Disperbyk-180이 형광체 액상 페이스트에 대하여 넓은 첨가량 범위에서 90일 이상의 안정성을 보였다. 안정화제 Disperbyk-180을 형광체 및 유전체 페이스트 용액에 첨가하여 인쇄 실험을 수행한 결과, 층분리 현상은 일어나지 않았으며, 균일도는 기존 사용 페이스트 보다 우수한 것으로 나타났고 인쇄 시 기포 발생과 점도 변화가 매우 작았다. 특히 형광체 페이스트의 경우 균일성과 휘도가 기존의 페이스트에 비하여 상당히 향상되었으며, ITO 기판과의 접착성도 우수하였다. 안정화제 Disperbyk-180이 첨가된 페이스트를 사용하여 제조한 EL 소자는 100 V, 400 Hz에서 $57.6cd/m^2$의 휘도를 나타내었으며, 주파수 변화에 따라서 급격한 휘도 변화는 나타내지 않았다. 또한 EL 소자의 수명을 측정한 결과 반감기는 1,250시간으로 외국에서 수입되어 시판되고 있는 페이스트를 사용한 경우와 유사한 수명을 나타내었다.

• 한국재료학회지
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• 제30권11호
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• pp.615-620
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• 2020

Oxide semiconductor, represented by a-IGZO, has been commercialized in the market as active layer of TFTs of display backplanes due to its various advantages over a-Si. a-IGZO can be deposited at room temperature by RF magnetron sputtering process; however, additional thermal annealing above 300℃ is required to obtain good semiconducting properties and stability. These temperature are too high for common flexible substrates like PET, PEN, and PI. In this work, effects of microwave annealing time on IGZO thin film and associated thin-film transistors are demonstrated. As the microwave annealing time increases, the electrical properties of a-IGZO TFT improve to a degree similar to that during thermal annealing. Optimal microwave annealed IGZO TFT exhibits mobility, SS, V_th, and V_H of 6.45 ㎠/Vs, 0.17 V/dec, 1.53 V, and 0.47 V, respectively. PBS and NBS stability tests confirm that microwave annealing can effectively improve the interface between the dielectric and the active layer.

• 한국전자파학회논문지
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• 제23권7호
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• pp.774-783
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• 2012

본 논문에서는 주기적인 요철 모양의 구조를 이용하여 인접해 있는 선로 간의 누화(crosstalk) 감소 효과를 갖는 전송 선로를 제안한다. 요철 모양의 전송 선로는 인접한 선로 간의 유도성 커플링과 용량성 커플링의 크기를 동일하게 조절이 가능하다. 따라서 유도성과 용량성의 커플링이 서로 상쇄되기 때문에 누화 감소 효과를 갖는다. 요철 모양의 전송 선로는 비유전율이 3.38이며, 두께가 0.508 mm인 RO4003 기판 위에 설계하였다. 전산모의 실험 결과, 일반적인 전송 선로와 주기 간격이 A=1 mm인 요철 모양 전송 선로의 far-end 누화는 30 GHz까지 각각 최대 -3.6 dB와 -22 dB 값을 가진다. 측정 결과, 일반적인 전송 선로와 A=1 mm인 요철 모양 전송 선로의 far-end 누화는 30 GHz까지 각각 최대 -6.3 dB와 -20.5 dB 값을 가진다.

• 한국세라믹학회지
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• 제43권11호
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• pp.688-692
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• 2006

Ferroelectric lanthanides-substituted $Bi_4Ti_3O_{12}$ $(Bi_{4-x}Ln_xTi_3O_{12}, BLnT)$ thin films approximately 200 nm in thickness were deposited by metal organic chemical vapor deposition onto Pt(111)/Ti/SiO$_2$/Si(100) substrates. Many researchers reported that the lanthanides substitution for Bi in the pseudo-perovskite layer caused the distortion of TiO$_6$ octahedron in the a-b plane accompanied with a shift of the octahedron along the a-axis. In this study, the effect of lanthanides (Ln=Pr, Eu, Gd, Dy)-substitution and crystallization temperature on their ferroelectric properties of bismuth titanate $(Bi_4Ti_3O_{12}, BIT)$ thin films were investigated. As BLnT thin films were substituted to lanthanide elements (Pr, Eu, Gd, Dy) with a smaller ionic radius, the remnant polarization (2P$_r$) values had a tendency to increase and made an exception of the Eu-substituted case because $Bi_{4-x}Eu_xTi_3O_{12}$ (BET) thin films had the smaller grain sizes than the others. In this study, we confirmed that better ferroelectric properties can be expected for films composed of larger grains in bismuth layered peroskite materials. The crystallinity of the thin films was improved and the average grain size increased as the crystallization temperature,increased from 600 to 720$^{\circ}C$. Moreover, the BLnT thin film capacitor is characterized by well-saturated polarization-electric field (P-E) curves with an increase in annealing temperature. The BLnT thin films exhibited no significant degradation of switching charge for at least up to $1.0\times10^{11}$ switching cycles at a frequency of 1 MHz. From these results, we can suggest that the BLnT thin films are the suitable dielectric materials for ferroelectric random access memory applications.