• Investigative Magnetic Resonance Imaging
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• v.24 no.3
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• pp.95-122
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• 2020

In this article, we evaluated the performance of radiofrequency (RF) coils in terms of the signal-to-noise ratio (S/N) and homogeneity of magnetic resonance images when used for ultrahigh-frequency (UHF) 7T magnetic resonance imaging (MRI). High-quality MRI can be obtained when these two basic requirements are met. However, because of the dielectric effect, 7T magnetic resonance imaging still produces essentially a non-uniform magnetic flux (|B₁|) density distribution. In general, heterogeneous and homogeneous RF coils may be designed using electromagnetic (EM) modeling. Heterogeneous coils, which are surface coils, are used in consideration of scalability in the |B₁| region with a high S/N as multichannel loop coils rather than selecting a single loop. Loop coils are considered state of the art for their simplicity yet effective |B₁|-field distribution and intensity. In addition, combining multiple loop coils allows phase arrays (PA). PA coils have gained great interest for use in receiving signals because of parallel imaging (PI) techniques, such as sensitivity encoding (SENSE) and generalized autocalibrating partial parallel acquisition (GRAPPA), which drastically reduce the acquisition time. With the introduction of a parallel transmit coil (pTx) system, a form of transceiver loop arrays has also been proposed. In this article, we discussed the applications and proposed designs of loop coils. RF homogeneous coils for volume imaging include Alderman-Grant resonators, birdcage coils, saddle coils, traveling wave coils, transmission line arrays, composite right-/left-handed arrays, and fusion coils. In this article, we also discussed the basic operation, design, and applications of these coils.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.185.2-185.2
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• 2014

We have studied the atomic and electronic structure of graphene nanoribbons (GNRs) on a hexagonal boron nitride (h-BN) sheet with intercalated atoms using first-principles calculations. The h-BN sheet is an insulator with the band gap about 6 eV and then it may a good candidate as a supporting dielectric substrate for graphene-based nanodevices. Especially, the h-BN sheet has the similar bond structure as graphene with a slightly longer lattice constant. For the computation, we use the Vienna ab initio simulation package (VASP). The generalized gradient approximation (GGA) in the form of the PBE-type parameterization is employed. The ions are described via the projector augmented wave potentials, and the cutoff energy for the plane-wave basis is set to 400 eV. To include weak van der Waals (vdW) interactions, we adopt the Grimme's DFT-D2 vdW correction based on a semi-empirical GGA-type theory. Our calculations reveal that the localized states appear at the zigzag edge of the GNR on the h-BN sheet due to the flat band of the zigzag edge at the Fermi level and the localized states rapidly decay into the bulk. The open-edged graphene with a large corrugation allows some space between graphene and h-BN sheet. Therefore, atoms or molecules can be intercalated between them. We have considered various types of atoms for intercalation. The atoms are initially placed at the edge of the GNR or inserted in between GNR and h-BN sheet to find the effect of intercalated atoms on the atomic and electronic structure of graphene. We find that the impurity atoms at the edge of GNR are more stable than in between GNR and h-BN sheet for all cases considered. The nickel atom has the lowest energy difference of ~0.2 eV, which means that it is relatively easy to intercalate the Ni atom in this structure. Finally, the magnetic properties of intercalated atoms between GNR and h-BN sheet are investigated.

• Korean Journal of Materials Research
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• v.30 no.10
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• pp.502-508
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• 2020

This paper focuses on the electrical properties and stability against DC accelerated aging stress of ZnO-V₂O₅-MnO₂-Nb₂O₅-Bi₂O₃-Co₃O₄-Dy₂O₃ (ZVMNBCD) varistor ceramics sintered at 850 - 925 ℃. With the increase of sintering temperature, the average grain size increases from 4.4 to 11.8 mm, and the density of the sintered pellets decreases from 5.53 to 5.40 g/㎤ due to the volatility of V₂O₅, which has a low melting point. The breakdown field abruptly decreases from 8016 to 1,715 V/cm with the increase of the sintering temperature. The maximum non-ohmic coefficient (59) is obtained when the sample is sintered at 875 ℃. The samples sintered at below 900 ℃ exhibit a relatively low leakage current, less than 60 mA/㎠. The apparent dielectric constant increases due to the increase of the average grain size with the increase of the sintering temperature. The change tendency of dissipation factor at 1 kHz according to the sintering temperature coincides with the tendency of the leakage current. In terms of stability, the samples sintered at 900 ℃ exhibit both high non-ohmic coefficient (45) and excellent stability, 0.8% in 𝚫E_B/E_B and -0.7 % in 𝚫α/α after application of DC accelerated aging stress (0.85 E_B/85 ℃/24 h).

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2012.10a
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• pp.307-311
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• 2012

In this paper, a novel particle swarm optimization method based on IE3D is used to design a mobile communication Microstrip Patch Antenna. The aim of the thesis is to Design and fabricate an inset fed rectangular Microstrip Antenna and study the effect of antenna dimensions Length (L), Width (W) and substrate parameters relative Dielectric constant (${\varepsilon}r$), substrate thickness on Radiation parameters of Band width. When the antenna was designed, a dual-band, dual-polarized antenna was used to secure the bandwidth and improve performance, and a coaxial probe feeding method so that the phased array of antenna is easy.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2012.10a
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• pp.316-319
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• 2012

In this paper, a novel particle swarm optimization method based on IE3D is used to design a mobile communication Microstrip Patch Antenna. The aim of the thesis is to Design and fabricate an inset fed rectangular Microstrip Antenna and study the effect of antenna dimensions Length (L), Width (W) and substrate parameters relative Dielectric constant (${\varepsilon}r$), substrate thickness on Radiation parameters of Band width. When the antenna was designed, a dual-band, dual-polarized antenna was used to secure the bandwidth and improve performance, and a coaxial probe feeding method so that the phased array of antenna is easy.

• Korean Chemical Engineering Research
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• v.43 no.6
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• pp.683-690
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• 2005

The microwave carbonization of rice chaff was performed, and their kinetics were compared to those of conventional thermal carbonization. Thermal carbonization was carried out at $300-600^{\circ}C$ for 30 minutes. The weight loss and C/H mole ratio remarkably increased as increase of temperature, while there was no carbonization by microwave dielectric heating in spite of increasing incident power and irradiation time. However, microwave carbonization was successfully performed by addition of 6 wt％ of thermal carbonized rice chaff, it's C/H mole ratio is larger than 3.0, as a catalytic initiator to uncarbonized rice chaff, and the kinetics was depended on the incident power and irradiation time, resulting in the coincide with thermal carbonization to the Arrhenius equation. The activation energy of microwave carbonization was quite low as compared to that of thermal carbonization, while the kinetic constant was large. This is due to the internal volumetric heating characteristics of carbonized rice chaff by microwave. The effect of ash, and C/H mole ratio and amount of carbonized rice chaff were investigated on microwave carbonization.

• Journal of Information Display
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• v.10 no.4
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• pp.149-157
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• 2009

Reported herein is the architecture for a nonvolatile n-type memory paper field-effect transistor. The device was built via the hybrid integration of natural cellulose fibers (pine and eucalyptus fibers embedded in resin with ionic additives), which act simultaneously as substrate and gate dielectric, using passive and active semiconductors, respectively, as well as amorphous indium zinc and gallium indium zinc oxides for the gate electrode and channel layer, respectively. This was complemented by the use of continuous patterned metal layers as source/drain electrodes.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.10
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• pp.1049-1055
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• 2004

Chemical Mechanical Polishing (CMP) is referred to as a three body tribological system, because it includes two solids in relative motion and the CMP slurry. On the assumption that the abrasives between the pad and the wafer could be a major reason not only for the friction force but also for material removal during polishing, the friction force generated during CMP process was investigated with the change of abrasive size and concentration of CMP slurry. The threshold point of average coefficient of friction (COF) with increase in abrasives concentration during interlayer dielectric (ILD) CMP was found experimentally and verified mathematically based on contact mechanics. The predictable models, Mode I (wafer is in contact with abrasives and pad) and Mode II (wafer is in contact with abrasives only), were proposed and used to explain the threshold point. The average COF value increased in the low abrasives concentration region which might be explained by Mode I. In contrast the average COF value decreased at high abrasives concentration which might be regarded to as Mode II. The threshold point observed seemed to be due to the transition from Mode I to Mode II. The tendency of threshold point with the variation of abrasive size was studied. The increase of particle radius could cause contact status to reach transition area faster. The correlation between COF and material removal rate was also investigated from the tribological and energetic point of view. Due to the energy loss by vibration of polishing equipment, COF value is not proportional to the material removal rate in this experiment.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07a
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• pp.46-49
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• 2003

Chemical mechanical polishing (CMP) is an essential dielectric planarization in multilayer microelectronic device fabrication. In the CMP process it is necessary to minimize the extent of surface defect formation while maintaining good planarity and optimal material removal rates. The polishing mechanism of W-CMP process has been reported as the repeated process of passive layer formation by oxidizer and abrasion action by slurry abrasives. Thus, it is important to understand the effect of oxidizer on W passivation layer, in order to obtain higher removal rate (RR) and very low non-uniformity (NU%) during W-CMP process. In this paper, we compared the effects of oxidizer or W-CMP process with three different kind of oxidizers with 5% hydrogen peroxide such as $Fe(NO_3)_3$, $H_2O_2$, and $KIO_3$. The difference in removal rate and roughness of W in stable and unstable slurries are believed to caused by modification in the mechanical behavior of $Al_3O_3$ particles in presence of surfactant stabilizing the slurry.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.207-207
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• 2012

Si quantum dot (QD) imbedded in a $SiO_2$ matrix is a promising material for the next generation optoelectronic devices, such as solar cells and light emission diodes (LEDs). However, low conductivity of the Si quantum dot layer is a great hindrance for the performance of the Si QD-based optoelectronic devices. The effective doping of the Si QDs by semiconducting elements is one of the most important factors for the improvement of conductivity. High dielectric constant of the matrix material $SiO_2$ is an additional source of the low conductivity. Active doping of B was observed in nanometer silicon layers confined in $SiO_2$ layers by secondary ion mass spectrometry (SIMS) depth profiling analysis and confirmed by Hall effect measurements. The uniformly distributed boron atoms in the B-doped silicon layers of $[SiO_2(8nm)/B-doped\;Si(10nm)]_5$ films turned out to be segregated into the $Si/SiO_2$ interfaces and the Si bulk, forming a distinct bimodal distribution by annealing at high temperature. B atoms in the Si layers were found to preferentially substitute inactive three-fold Si atoms in the grain boundaries and then substitute the four-fold Si atoms to achieve electrically active doping. As a result, active doping of B is initiated at high doping concentrations above $1.1{\times}10^{20}atoms/cm^3$ and high active doping of $3{\times}10^{20}atoms/cm^3$ could be achieved. The active doping in ultra-thin Si layers were implemented to silicon quantum dots (QDs) to realize a Si QD solar cell. A high energy conversion efficiency of 13.4% was realized from a p-type Si QD solar cell with B concentration of $4{\times}1^{20}atoms/cm^3$. We will present the diffusion behaviors of the various dopants in silicon nanostructures and the performance of the Si quantum dot solar cell with the optimized structures.