• Proceedings of the KIEE Conference
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• 1994.07b
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• pp.1536-1539
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• 1994

The influence due to metallic particle contaminated on spacer surface is remarkable in the decreasing of dielectric strength in $SF_6$ GIS. In relation with this problem, We studied, AC flash-over voltage characteristics and breakdown mechanism are investigated under metallic particle initiated condition in $SF_6$ gas by varying the particle position, particle shape with a plane-plane electrode. The main results arc as follows 1. The small amount of the metallic particle in the gap do not make flash-over voltage to be influence, but the significant decrease of th flash-overed voltage is result in case of the big and long size of the metallic paraticle. 2. Influence of the flash-over voltage are lowest in the mid and are highest in the electrode of metallic particle position. 3. In case of the initiated metallie particle, The more the pressure are high, the more the recluced ratio of flash-over voltage are high. 4. The metallic particle shape which results in the reduced flash-over voltage forced the critical pressure to move in to the region of low pressure. 5. The existance of the metallic particle on the upper electrode side and high pressure make the decreasing ratio of flash-over voltage bigger than that of the ground side electrode.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.10 no.6
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• pp.1088-1094
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• 2006

In this paper, we establish a mode oxidation process for formation of $Ta_2O_5$ insulator film. The voltage drop in the electrolyte is affected not in voltage change but in current change. If the voltage drop in the electrolyte is same with cathode oxidation voltage, the current changes logarithmically in proportion to the voltage drop in interface of Ta2O5/electrolyte. As a result of the measurement on the electrical property of $Ta_2O_5$ insulator film, when the thickness of the insulator film is $1500\AA$, the breakdown voltage is 350volts Ind dielectric constant is 29.

• Electrical & Electronic Materials
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• v.10 no.2
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• pp.134-140
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• 1997

PbTiO$_{3}$-PbZrO$_{3}$-Pb(Ni$_{1}$3/Nb $_{2}$3/O$_{3}$)(PZT-PNN) thin films were prepared from corresponding metal organics partially stabilized with diethanolamine by the sol-gel spin coating method. Each mol rates of PT:PZ:PNN solutions were #1(50:40:10), #2(50:30:20), #3(45:35:20) and #4(40:40:20), respectively. The spin-coated PZT-PNN films were sintered at the temperature from 500.deg. C to 600.deg. C for crystallization. The P-E hysteresis curve was drawn by Sawyer-Tower circuit with PZT-PNN film. The coercive field and the remanent polarization of #4(40:40:20 mol%) PZT-PNN film were 28.8 kV/cm and 18.3 .mu.C/cm$^{2}$, respectively. Their dielectric constants were shown between 128 and 1120, and became maximum value in MPB(40:40:20 mol%). The leakage currents of PZT-PNN films were about 9.4x 10$^{-8}$ A/cm$^{2}$, and the breakdown voltages were about 0.14 and 1.1 MV/cm. The Curie point of #3(45:35:20 mol%, sintered at 600.deg. C) film was 330.deg. C.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.6
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• pp.470-475
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• 2009

We deposited $Al_2O_3$ thin films on GaN by remote plasma atomic layer deposition (RPALD) technique, trimethylaluminum(TMA) and oxygen were used as precursors, at fixed process condition, the number of cycle were changed. Growth rate per cycle was $1.2\;{\AA}$/cycle. and Growth rate was in proportion to a number of cycle, the GaN MIS capacitors that $Al_2O_3$ thin film were deposited above 12 nm, have excellent electrical properties, a low electrical leakage current density(${\sim}10^{-10}\;A/cm^2$ at 1.5 MV), but below 12 nm, we can see the degradation of the leakage current density. After post deposition annealing, Dielectric constant was estimated by 1 MHz high-frequency C-V method, it was varied with the anealing temperature from 6.9 at no post anealed to 7.6 at $800^{\circ}C$, and we can see a improvement of the leakage current density and breakdown voltage by post deposition anealing below $700^{\circ}C$, but, after anealed at $800^{\circ}C$, we can see the degradation of the leakage current density and breakdown voltage.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.37 no.3
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• pp.286-291
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• 2024

Research on aged insulation of cables by stress is constantly being considered for reliable and stable power transmission of offshore wind farms. This study aimed to evaluate the insulation characteristic of aged XLPE (cross-linked polyethylene) insulation for application of offshore wind farms. In this study, The XLPE insulation of cable was set as various mechanical strains. The XLPE insulation is exposed to the mechanical stress below yield strain of 5%, 10%, and 20%. Aged samples were tested by using the method of AC BDV (alternative current breakdown voltage), tensile strength, elongation, and SEM (scanning electron microscope) to obtain insulation characteristics. The experimental results show that the dielectric breakdown of the sample with a strain 20% was 50% lower than the unaged sample; thereby, demonstrating that the mechanical strain that occurred in the submarine cables can weaken the insulation characteristics. Therefore, mechanical strain should be monitored when laying and operating submarine cables for offshore wind farms.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.25 no.12
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• pp.961-968
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• 2012

In this study, we have investigated the effects of Mn and Co co-doping on defects, J-E curves and grain boundary characteristics of ZnO-$Bi_2O_3$ (ZB) varistor. Admittance spectra and dielectric functions show two bulk defects of $Zn_i^{{\cdot}{\cdot}}$ (0.17~0.18 eV) and $V_o^{\cdot}$ (0.30~0.33 eV). From J-E characteristics the nonlinear coefficient (${\alpha}$) and resistivity (${\rho}_{gb}$) of pre-breakdown region decreased as 30 to 24 and 5.1 to 0.08 $G{\Omega}cm$ with sintering temperature, respectively. The double Schottky barrier of grain boundaries in ZB(MCo) ($ZnO-Bi_2O_3-Mn_3O_4-Co_3O_4$) could be electrochemically single type. However, its thermal stability was slightly disturbed by ambient oxygen because the apparent activation energy of grain boundaries was changed from 0.64 eV at lower temperature to 1.06 eV at higher temperature. It was revealed that a co-doping of Mn and Co in ZB reduced the heterogeneity of the barrier in grain boundaries and stabilized the barrier against an ambient temperature (${\alpha}$-factor= 0.136).

• Journal of Electrical Engineering and Technology
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• v.10 no.5
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• pp.2070-2076
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• 2015

Nano composite materials were multi-constituent combinations of nano dimensional phases with distinct differences in structure, chemistry and properties. Nano particles were less likely to create large stress concentrations and thereby can avoid the compromise of the material ductility while improve other mechanical properties. Corona discharge was an electrical discharge. The ionization of a fluid surrounding a conductor was electrically energized. This discharge would occur when the strength of the electric field around the conductor was high enough to form a conductive region, but not high enough to cause electrical breakdown or arcing to nearby objects. This paper shows all the studies done on the preparation of nano fillers. Special attention has given to the ACSR transmission line conductor, TiO₂ nano fillers and also to the evaluation of corona resistance on dielectric materials discussed in detail. The measurement of the dielectric properties of the nano fillers and the parameters influencing them were also discussed in the paper. Corona discharge test reveals that in 0%N ACSR sample corona loss was directly proportional to the applied line voltage. No significant change in corona loss between 0%N and 1%N. When TiO₂ nano filler concentration was increased up to 10%N fine decrement in corona loss was found when compared to base ACSR conductor, corona loss was decreased by 40.67% in 10%N ACSR sample. It was also found from the surface conditions test that inorganic TiO₂ nano filler increases the key parameters like tensile strength and erosion depth.

• Journal of the Korean Ceramic Society
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• v.34 no.2
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• pp.181-187
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• 1997

The layered BaTiO3 thin films with a high dielectric constant of polycrystalline BaTiO3 and a good in-sulating property of amorphous BaTiO3 were prepared. And their electrical properties were characterized with stacking methods. The BaTiO3 thin films were prepared by rf-magnetron sputtering technique using a ceramic target on Indium-doped Tin oxide coated glasses. A new stacking method resulted in higher dielec-tric constant, capacitance per unit area, and breakdown strength than those prepared by a conventional stacking method; the new method continuously decrease the substrate temperature after initial deposition of a polycrystalline BaTiO3 layer. The observed high dielectric constant could be explained only by a mul-tilayered amorphous/microcrystalline/polycrystalline structure, which was confirmed indirectly by AES depth profile.

• Transactions on Electrical and Electronic Materials
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• v.8 no.2
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• pp.84-88
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• 2007

[ $Bi_{1.5}Zn_{1.0}Nb_{1.5}O_7$ ] (BZN), $Bi_2Mg_{2/3}Nb_{4/3}O_7$ (BMN), and $Bi_2Cu_{2/3}Nb_{4/3}O_7$ (BCN) pyrochlore thin films were prepared on $Cu/Ti/SiO_2/Si$ substrates by pulsed laser deposition and the micro-structural and electrical properties were characterized for embedded capacitor applications. The BZN, BMN, and BCN films deposited at $25\;^{\circ}C$ and $150\;^{\circ}C$, respectively show smooth surface morphologies and dielectric constants of about $39\;{\sim}\;58$. The high dielectric loss of the films deposited at $150\;^{\circ}C$ compared with films deposited at $25\;^{\circ}C$ was attributed to the defects existing at interface between the films and copper electrode by an oxidation of copper bottom electrode. The leakage current densities and breakdown voltages in 200 nm thick-BMN and BZN films deposited at $150\;^{\circ}C$ are approximately $2.5\;{\times}\;10^{-8}\;A/cm^2$ at 3 V and above 10 V, respectively. Both BZN and BMN films are considered to be suitable materials for embedded capacitor applications.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.05a
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• pp.469-472
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• 1999

CeO$_2$ thin films have used in wide applications such as SOI, buffer layer, antirflection coating, and gate dielectric layer. CeO$_2$takes one of the cubic system of fluorite structure and shows similar lattice constant (a=0.541nm) to silicon (a=0.543nm). We investigated CeO$_2$films as buffer layer material for nonvolatile memory device application of a single transistor. Aiming at the single transistor FRAM device with a gate region configuration of PZT/CeO$_2$ /P-Si , this paper focused on CeO$_2$-Si interface properties. CeO$_2$ films were grown on P-type Si(100) substrates by 13.56MHz RF magnetron sputtering system using a 2 inch Ce metal target. To characterize the CeO$_2$ films, we employed an XRD, AFM, C-V, and I-V for structural, surface morphological, and electrical property investigations, respectively. This paper demonstrates the best lattice mismatch as low as 0.2 % and average surface roughness down to 6.8 $\AA$. MIS structure of CeO$_2$ shows that breakdown electric field of 1.2 MV/cm, dielectric constant around 13.6 at growth temperature of 200 $^{\circ}C$, and interface state densities as low as 1.84$\times$10$^{11}$ cm $^{-1}$ eV$^{-1}$ . We probes the material properties of CeO$_2$ films for a buffer layer of FRAM applications.