• Proceedings of the KIEE Conference
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• 2000.11c
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• pp.485-487
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• 2000

Dielectric strength of insulators made of epoxy composites rapidly decreases due to ageing to interfaces between the matrix resin and filler particles. The adhesion variation of interfaces caused by moisture absorption also alters electrical properties that are the basic characteristics of insulators, particularly, in out door use. In this paper, electrical properties of epoxy/$SiO_2$ composites were investigated at boiling absorption condition to observe that influence of moisture. The breakdown time of samples were measured under AC 6[kV] applied voltage, and the variation of lifetime was varified by using Weibull distribution function.

• Proceedings of the KIEE Conference
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• 1997.07e
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• pp.1702-1704
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• 1997

본 논문은 HDPE 필름의 절연성능을 평가하기 위하여 절연파괴강도의 결과를 Weibull분에 적용하였다. 각 절연파괴강도의 Weibull분포로부터 형의 모수를 구하였다. 또한 Weibull분포의 활용은 2개 및 3개의 모수법을 각각 적용시켜 절연파괴강도의 평가를 하였다. HDPE 필름을 열화시켜, 형의 모수변화를 비교하였다. 이와같은 Weibull분포의 활용은 절연성능과 수명의 평가를 통계적으로 평가코져 한다.

• Proceedings of the KIEE Conference
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• 1997.07e
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• pp.1794-1797
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• 1997

The preflashover light emission of the $SiO_2$-dielectric system behavior under high electric field is discussed. Time dependence of the voltage drop, electrical current, and light emission, are analyzed for high-purity $SiO_2$-vacuum systems under impulse voltage stress. We will summarize the experimental results showing the main feature of the time-dependent system response up to breakdown.

• Proceedings of the KIEE Conference
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• 1997.07d
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• pp.1196-1198
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• 1997

In this work, simultaneous measurement such as change distribution and electrical conduction of maleic anhydride grafted XLPE was investigated. Heterocharge was found in XLPE and it decreased with increasing MAR graft ratio in XLPE-g-MAH. Conduction currents also decreased with increasing MAR graft ratio. The relationship between the space change behavior and the electrical conduction characteristics in XLPE-g-MAH is discussed.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.08a
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• pp.379-379
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• 2011

차세대 저항메모리(resistive switching random access memory; ReRAM)의 개발을 위해 다양한 산화 물질들의 저항 변화 특성이 연구되고 있다. 본 연구에서는 저항 변화 물질로 잘 알려진 ZnO 박막을 이용하여 저항 변화 특성을 평가하였다. ZnO 박막은 Pt/Ti/$SiO_2$/Si 기판 위에 스퍼터링 시스템을 이용하여 약 50 nm 두께로 증착되었다. 증착된 박막 위에 전극을 evaporator를 이용하여 패턴닝함으로써 전극-반도체-전극 구조의 소자를 만들고 이의 전기적 특성을 평가하였다. Compliance current를 설정하여 저항 변화 특성을 측정한 결과 가해진 전압의 극성에 관계 없이 저항이 변화하는, dielectric breakdown에 의해 박막내 전도성 필라멘트라 불리는 전도성 길이 생성되었다가 joule-heating에 의해 필라멘트가 파열되는, 전형적인 unipolar 저항 변화특성이 나타났다. 다기능성 소자 개발을 위해 위 소자 구조를 투명한 고분자 기판위에 형성하고 표면에 초발수성 ZnO 나노막대 구조를 합성하였다. 그 결과 투명하면서 유연하고, 수분에도 안정적인 다기능성 저항 변화 소자 특성을 평가할 수 있었다. 본 결과를 바탕으로 필라멘트 이론에 기초한 저항 변화 메커니즘을 설명하는 모델이 제시되었다.

• Transactions of Materials Processing
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• v.11 no.7
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• pp.569-574
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• 2002

Recently, thick PZT films are required for the cases of micro piezoelectric devices with high driving force, high breakdown voltage and high sensitivity, and so on. In this work, thick PZT films were fabricated by Sol-Gel multi-coating method. Microstructures, and electrical properties of films were investigated by XRD, FESEM, impedance analyzer, and P-E hysteresis. PZT films with 2.7$mu extrm{m}$ to 4.4${\mu}{\textrm}{m}$ thickness were fabricated. Dielectric constant, loss, remnant polarization and coercive field of them were 880~1650 at 1kHz, 2~3% at 1kHz, 26~32 $\mu$C/$ extrm{cm}^2$, and 33~60kV/cm, respectively. Also a transverse piezoelectric coefficient $(e_{31,f})$ measurement system was fabricated and tested for thick film samples.

• Proceedings of the KIEE Conference
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• 1994.07b
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• pp.1323-1326
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• 1994

the application of epoxy composite materials for outdoor insulating systems has some significant advantages compared with conventional inorganic materials, that is low weight in combination with high mechanical strength, small dimensions and design versatility. The experimental results for the basis composition and interlace characteristics of the matrix resin/inorganic fillers($SiO_2$) which are the composite materials have been studied. The electrical characteristics(electrical breakdown, dielectric, insulating resistivity, tracking) and mechanical characteristics( tensile strength, elongation, flexible strength) in the epoxy composite materials have been studied. The life of the epoxy composite material was evaluated by accelerated Weather-Ometer test and the degradation process due to outdoor exposure condition is discussed with respect to the mechanical and electrical properties.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.273-274
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• 2008

For the purpose of practical use of epoxy composite materials, it has been widely known that adding filler is an indispensable condition for cost-effectiveness and reinforcement of mechanical strength. However, dielectric strength of insulators made of epoxy composites rapidly decreases due to interfaces between the epoxy resin and filler particles. In this paper, it is investigated that the electrical properties of epoxy resins as the function of nano-$SiO_2$ content. We obtained that breakdown voltage of 0.4[wt%] specimens is higher than the other $SiO_2$ content.

• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.177-180
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• 2009

Here is presented the measurement on SrO- and SrCaO-PDP operated at lower voltage. SrO- and SrCaO-PDP attain high luminous efficacy at low voltage, where the breakdown voltage is 30 % lower than that of the ordinary MgO-PDP. A one-dimensional fluid model is applied for the simulation of PDP discharge. High VUV radiation efficiency is confirmed at high ${\gamma}_i$ and both low and high $V_s$ as in the experiment. Discharge analysis in simulation also shows that the high ${\gamma}_i$ protective layer leads to high plasma density especially near the cathode electrode, being responsible for high efficiency.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.18 no.5
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• pp.450-456
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• 2005

In this paper, the effect of adhesion properties of semiconductive-insulating interface layer of silicone rubber on electrical properties was investigated. The modifications produced on the silicone surface by oxygen plasma were accessed using ATR-FTIR, contact angle and Surface Roughness Tester. Adhesion was obtained from T-peel tests of semiconductive layer haying different treatment durations. In addition, ac breakdown test was carried out for elucidating the change of electrical property with duration of plasma treatment. From the results, the treatment in the oxygen plasma produced a noticeable increase in surface energy, which can be mainly ascribed to the creation of O-H and C=O. It is observed that adhesion performance was determined by surface energy and roughness level of silicone surface. It is found that at dielectric strength was increased with improving the adhesion between the semiconductive and insulating interface.