• Proceedings of the KIEE Conference
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• 1996.07c
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• pp.1585-1587
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• 1996

The dielectric properties of DGEBA/MDA/GN system under inhomoneous electric field were investigated. As GN contents increased, impact strength increased, but dielectric breakdown strength decreased. At $150^{\circ}C$, the dielectric breakdown strength decreased and uniformly maintained with the increment of distance between two electrodes. The life-time of epoxy resin increased with the decrement of applied voltage, but dielectric breakdown didn't occur below specific applied voltage.

• The Transactions of the Korean Institute of Electrical Engineers
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• v.37 no.12
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• pp.872-878
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• 1988

During the past few years, a great deal of attention has been directed to the application of superconductivity to the electrical systems such as superconducting power transmission lines, superconducting magnet energy storage and so on. Yet in order to develop the practical model of these electrical equiqments utilizing suprconductivety and other phenomena at cryogenic temperautre, it is necessary to know the dielectric behaviour of insulating materials at cryogenic temperature in view of reliability, safety and economy of these machines. Investigation of dielectric properties of cryogenic liquids is very important due to the dual role of those as the dielectric and cooling medium. In this study, we investigated results measured over several kinds of dielectric characteristics of liquid nitrogen taking into consideration for application of high Tc superconductor. Dependence of breakdown voltage of gap width, polarity and pressure is reported in this paper and time delay characteristics of breakdown is also the subject of this discussion.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.20 no.2
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• pp.118-123
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• 2007

The purpose of this work was to investigate the design and fabrication process effects on electrical properties in high capacitance multilayer ceramic capacitor (MLCC) with nickel electrode. Dielectric breakdown voltage and insulation resistance value were decreased with increasing stack layer number, but dielectric constant and capacitance were increased. With increasing green sheet thickness, dielectric breakdown voltage, C-V and I-V properties were also increased. The major reasons of the effects were thought to be the defects generated extrinsically during fabrication process and interfacial reactions formed between nickel electrode and dielectric layer. These investigations clearly showed the influence of both green sheet thick ness and stack layer number on the electrical properties in fabricating the MLCC.

• Journal of the Microelectronics and Packaging Society
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• v.21 no.4
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• pp.111-115
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• 2014

Effect of dynamic electric fields on dielectric breakdown behavior in Cu damascene interconnects was investigated. Among the DC, unipolar, and bipolar pulse conditions, the longest dielectric lifetime is observed under the bipolar condition because backward Cu ion drift occurs when the direction of electric field is changed by 180 degrees and Cu contamination is prohibited as a results. Under the unipolar pulse condition, the dielectric lifetime increases as pulse frequency increases and it exceed the lifetime under DC condition. It suggests that the intrinsic breakdown of dielectrics significantly affect the dielectric breakdown in addition to Cu contamination. As the unipolar pulse width decreases, dielectric bond breakdown is more difficult to occur.

• Proceedings of the KIEE Conference
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• 1995.11a
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• pp.430-432
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• 1995

In this paper, the electron beam with 1[Mrad], 2[Mrad], 4[Mrad], 8[Mrad] and 24[Mrad] is irradiated for specimen experiments on physical properties which is investigated by FTIR, and dielectric breakdown among the electrical characteristics of specimen are carried out. For the dielectric breakdown experiment, external 60 [Hz] AC voltage is applied to specimen with the rising voltage of 3[kV/cm] until dielectric breakdown occured. We made a breakdown experiment under the temperature condition of 50[$^{\circ}C$], 100[$^{\circ}C$], 150[$^{\circ}C$] in the silicone oils of dynamic viscosity of 100[cSt].

• Electrical & Electronic Materials
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• v.9 no.4
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• pp.364-371
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• 1996

In this study, in order to investigate the applicability of IPN structure to epoxy resin which has been widely used as electrical and electronic insulating materials, DC dielectric breakdown properties and morphology were compared and analyzed according to variation of network structure, using the single network structure specimen formed of epoxy resin alone, interpenetrating polymer network specimen formed of epoxy resin/methacrylic acid resin, and interpenetrating polymer network specimen formed of epoxy resin/methacrylic acid resin/polyurethane resin. As results of the measunnent of DC dielectric breakdown strength at 50[.deg. C] and 130[>$^{\circ}C$], IPN specimen formed of epoxn, resin 100[phr] and methacrylic acid resin 35[phr] was the most excellent, and which corresponded to the SEM phenomena. The effect of IPN was more remarkable at high temperature region than at low temperature region. It is supposed that the defect of epoxy resin, dielectric breakdown strength is lowered remarkably at high temperature region, be complemented according to introducing IPN method.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2001.10a
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• pp.724-728
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• 2001

In this study, the dielectric breakdown of epoxy composites used for transformers was experimented and then its data were simulated by Weibull distribution probability. The dielectric breakdown characteristics origin in epoxy composites were examined and various effects of dielectric breakdown on epoxy composites were also discussed. As a result, first of all, speaking of dielectric breakdown properties, the more hardener increased the stronger breakdown strength at low temperature because of cross-linked density by the virtue of ester radical. And the breakdown strength of specimens with filler was lower than it of non-filler specimens because it is believed that the adding filler forms interface and charge is accumulated in it, therefore the molecular motility is raised, the electric field is concentrated, and the acceleration of electron and the growth of electron avalanche are early accomplished. In the case of filled specimens with treating silane, the breakdown strength become much higher since this suggests that silane coupling agent improves interfacial combination and relaxs electric field concentration. Finally, from the analysis of weibull distribution, it was confirmed that as the allowed breakdown probability was given by 0.1%, the applied field value needed to be under 21.5㎹/cm.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.86-86
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• 2010

Recently, CV, CNCV, CNCV-W cable are used to transmit and distribute electric power. And a lot of researchers put more effort to realize high performance. The dielectric breakdown strength characteristic is a standard to design insulators. Examination of that is a main factor to determine long term insulation performance, which is used to diagnose Insulation deterioration. In this paper, we prepared XLPE, XLPE/nano-filler, LDPE/nano-filler for comparing each of the dielectric breakdown strength characteristics.

• Proceedings of the KIEE Conference
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• 1993.11a
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• pp.216-218
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• 1993

XLPE cable accessories are mainly consisted by the combination of various insulating materials such as XLPE cable insulation, rubber, epoxy, etc. It is important to investigate the dielectric and breakdown characteristics of the interfaces between various insulating materials. In this paper, by testing and measuring the breakdown strength, dissipation factor, volume and surface resistance and conduction current of specimens, we report the dielectric and breakdown characteristics of interfaces between various insulating materials.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1992.11a
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• pp.11-13
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• 1992

The dielectric reliability of the Thin $SiO_2$ films of wet oxidation on n-type Si substrates has been studied by using self-healing method of breakdown and according to injection time high frequence C-V tests. These experiments have been performed to investigate the dielectric breakdown mechanism of a thin film in which positive charge generation during high-field Fowler-Nordheim tunneling are considered. In addition, The weak spots and robust areas are distinguished so that the localized dielectric breakdown could be described.