• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11b
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• pp.262-265
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• 2001

In order to investigate the water tree degradation behavior on XLPE cable, direct voltage of 200 to 800V has been applied to the material at $50^{\circ}C\sim100^{\circ}C$. and the water tree property has been correlated with voltage and temperature in this study. The leakage current was shown to increase as temperature increased and the Ohm's law was generally satisfied in this experiment though some experimental errors were found. The leakage current was shown to decrease and reach to the stable state with time. It was also shown that the time for the stabilization of leakage current was lessened as voltage increased

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1996.05a
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• pp.256-259
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• 1996

In this paper, We studied polyethylene thin film to evaluate the effects of crystal structure on breakdown properties and the dielectric strength on the condition of impurity free. Bielectric strength of the finn obtained with self healing method that is able to test repeatedly on the same sample is about 3.58 MV/cm at 0.73 $\mu\textrm{m}$. The film shows outstanding crystal domain an\ulcorner crystal structure. The size of spherulites obtained reach 150-200 $\mu\textrm{m}$ in diameter.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2017.05a
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• pp.96.1-96.1
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• 2017

This presentation introduces anodizing science of typical valve metals of Al, Mg and Ti, based on the ionic transport through the andic oxide films in various electrolyte compositions. Depending on the electrolyte composition, metal ions and anions can migrate through the andic oxide film without its dielectric breakdown when point defects are present within the anodic oxide films under high applied electric field. On the other hand, if anodic oxide films are broken by local joule heating due to ionic migration, metal ions and anions can migrate through the broken sites and meet together to form new anodic films, known as plasma electrolytic oxidation (PEO) treatment. In this presentation, basics of conventional anodizing and PEO methods are introduced in detail, based on the ionic migration and movement mechanism through anodic oxide films by point defects and by local dielectric breakdown of anodic oxide films.

• Proceedings of the KIEE Conference
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• 1987.11a
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• pp.267-271
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• 1987

The test cell for preventing the edge effect reducing the intrinsic breakdown strength of polypropylene film and measuring the intrinsic breakdown strength of the film was developed. The new approach was to develope an electrode system with an edge region which is carefully graded over an extended distance. The new test arrangement employed a central circular electrode at high voltage and a set of nine concentric surrounding rings each controlled in potential by external grading resistors to be at decreasing potentials from that at the center in 10% increments. Two different size structures using the same basic principle were tried and were both found to be successful. The test electrodes were manufactured using standard printed circuit technology and were chosen to be copper on high dielectric constant GIO board.

• Proceedings of the Korean Society of Computer Information Conference
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• 2012.01a
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• pp.233-236
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• 2012

본 연구에서는 변성기용으로 사용되는 에폭시 복합체에 대해 절연 파괴 실험을 하고 그 데이터를 와이블 분포 확률을 이용해서 시뮬레이션을 하였다. 에스테르기의 기여에 의한 가교밀도 때문에 저온에서 경화제가 증가할수록 파괴강도가 증가하고 충진제를 첨가한 시료들의 파괴강도는 비충진 시료들의 경우 보다 더 낮았는데 이는 충진제 첨가가 계면을 형성하고 전하가 축적되어 분자의 이동도가 증가되고, 전계가 집중되어 전자 가속화 및 전자 사태의 성장이 초기에 도달되기 때문으로 사료된다. 또한 와이블 분포의 분석으로부터 허용 절연파괴 확률이 0.1[%]로 주어질 때, 인가 전계값은 21.5[kV/mm] 이하가 되어야 함을 확인하였다.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.30A no.11
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• pp.105-112
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• 1993

Oxide and reoxidized-nitrided-oxide were formed by furnace oxidation and rapid thermal processing (RTP). MOS capacitor and n-MOSFET's with those films as gate insulators were fabricated. The electrical characteristics of insulators were evaluated by current-voltage, high-frequency capacitance-voltage (C-V), and time-dependent dielectrical breakdown (TDDB) measurements. The hot carrier effects of MOSFET's were also investigated. Time-dependent dielectrical breakdown (TDDB) characteristics show that the life time of reoxidized-nitrided-oxide films is about 3 times longer than that of oxides. Hot carrier effects reveal that the life time of MOSFET's with reoxidized-nitrided-oxides is about 3 times longer than that of MOSFET's with oxides. Therefore, it is found that the reliability of dielectric films estimated by the hot carrier effects of MOSFET's is consistent with that of dielectric films from TDDB method.

• Journal of information and communication convergence engineering
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• v.8 no.4
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• pp.453-456
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• 2010

Tantalum oxide ($Ta_2O_5$) films are of considerable interest for a range of application, including optical waveguide devices, high temperature resistors, and oxygen sensors. In this paper, we establish an anode oxidation process of tantalum thin film. The voltage drop in the electrolyte is affected not in voltage change but in current change. If the voltage drop in the electrolyte is same with cathode oxidation voltage, the current changes logarithmically in proportion to the voltage drop in interface of tantalum oxide and electrolyte. As a result of the measurement on the electrical property of tantalum oxide thin film, when the thickness of the insulator film is $1500{\AA}$, the breakdown voltage is 350volts and dielectric constant is 29.

• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.1402-1404
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• 2009

The silicon nitride films for gate dielectric were deposited by catalytic chemical vapor deposition at low temperature (${\leq}200^{\circ}C$). The mixture of $SiH_4$, $NH_3$ and $H_2$ was used as source gases. The current-voltage (I-V) and the capacitance-voltage (C-V) characteristics of the films were measured. The breakdown voltage and the flat band voltage shift of samples were improved by increase of the $NH_3$ contents and $H_2$ dilution ratio. The defect states were analyzed by photoluminescence (PL) spectra. As the defect states decreased, the breakdown voltage and the flat band voltage shift increased.

• 전기의세계
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• v.20 no.3
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• pp.27-31
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• 1971

The main focus of this paper is on the study of the radiation effect upon the electrical property of a A-Kind insulator which is one of the organic insulators. The varnished cloth is so typical of the A-Kind insulators as to be selected for a sample. AC and Impluse voltage is applied to the variable Gamma ray irradiated dose samples with the constant time duration and the dielectric breakdown voltage are measured from the sample. The experimental data of the dielectric breakdown voltage are considerably decreased. The above conclusion is useful for the selection and application of the orgainc insulators under the irradiation effects.

• Electrical & Electronic Materials
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• v.9 no.7
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• pp.702-707
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• 1996

In this paper, in order to improve the withstand voltage properties of epoxy resin, IPN(interpenetrating polymer network) method was introduced and the influence was investigated. The single network structure specimen(E series), simultaneous interpenetrating polymer network specimen(EM series) and pseudo interpenetrating polymer network(EMP series) specimen were manufactured. In order to understand the internal structure properties, scanning electron microscopy method was utilized, and glass transition temperature was measured. Also, AC voltage dielectric breakdown strength, tensile strength and impact strength were measured to investigate the influence upon electrical and mechanical properties. As a result, it was confirmed that simultaneous interpenetrating polymer network specimen was the most execellent.