• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
• /
• v.24 no.8
• /
• pp.126-132
• /
• 2010

This paper presents dielectric characteristics of $N_2$ gas under impulse voltages in a quasi-uniform electric field gap. The experiments were carried out at the test gap applied by the 1.2/50[${\mu}s$] lightning impulse voltage, 180/2500[${\mu}s$] switching impulse voltage, 500[ns]/1[MHz] very fast transient overvoltage(VFTO). The gap separation of sphere-to-plane electrodes was 14[mm] and the electric field utilization factor was about 71.2[%]. The gas pressure ranges from 0.2 to 0.6[MPa]. As a result, the electrical breakdowns are occurred by streamer discharge. Breakdown voltages are linearly increased with the gas pressure and the highest breakdown voltage is appeared under the VFTOs having fast rising time. Breakdown voltages under the positive impulse voltages were higher than those under the negative ones, and also the time to breakdown in the positive polarity is longer than that in the negative polarity.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2003.05d
• /
• pp.38-42
• /
• 2003

The use of VPI impregnated mica tape as high voltage insulation for large rotating electric machines requires a careful balance of processes and materials to obtain the desired electrical, mechanical and thermal characteristics. The stator insulation systems such as epoxy bonded high voltage mica tape have been produced for many years. One such system employing an epoxy and anhydride impregnating resin developed by Hyundai Heavy Industries, Co. (hereafter, HHI), to satisfy customer requests for an epoxy bonded insulation system. HHI applies the following electrical and thermal evaluations such as dielectric breakdown, voltage endurance, dissipation factor vs. temperature, isothermal weight loss, and so on. A detailed laboratory evaluation can describe specific physical limitations for an insulation system and permit development of long-term operation guidelines that permit full utilization of the proposed system. HHI has found these evaluations very helpful in qualifying insulation system for the repair of both large motors and generators.

• Proceedings of the KIEE Conference
• /
• 1997.07d
• /
• pp.1232-1235
• /
• 1997

서로 다른 두께를 가진 다층구조 $BaTiO_3$ 박막의 절연신뢰성을 time-zero dielectric breakdown (TZDB) 기법과 time-dependent dielectric breakdown (TDDB) 기법을 사용하여 평가하였으며 통계적 방법을 이용하여 그 결과를 분석하였다. 다층구조 $BaTiO_3$ 박막은 rf-magnetron sputtering 방법으로 ITO가 코팅된 유리기판 위에 형성되었다 TZDB 측정 결과, 박막의 두께가 증가 할수록 최고 빈도수를 보이는 항복전기장의 세기는 낮아지는 것으로 확인되었으며, 두께에 따라 다른 항전기장의 분포를 보였다. TDDB 결과로부터 박막의 두께 증가에 파라 안정적인 시간거동 특성이 확인되었으며 이것은 항전기장의 분포 특성과 관계가 있는 것으로 보인다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 1997.04a
• /
• pp.35-40
• /
• 1997

As demand of electric power are growing and transmission line limited owing to enlargement of the downtown area The eonfidence of underground transmission cable which shows gradual growth are high. It is found whether insulating ability is good or not. In this paper, The exper iment result is shown that the fall of insulating ability and take preventive measure through the analysis of tans, water content, dielectric breakdown voltage, total acid number, volume resistivity , and gas in the oil in an accordance with the characteristic change of oil used very much for insulating oil of cable.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 1998.11a
• /
• pp.1-4
• /
• 1998

In this paper, we have studied a variation of I-V characteristics, and time-dependent dielectric breakdown(TDDB) of thin layer NO and ONO film depending on nitridation and reoxidation time, respectively, and measured a variation of leakage current and charge-to-breakdown(Q$\_$bd/) of optimized NO and ONO film depending on ambient temperature, and then compared with the properties of conventional SiO$_2$. From the results, we find that these NO and ONO thin films are strongly influenced by process time and the optimized ONO film shows superior dielectric characteristics, and Q$\_$bd/ performance over the NO film and SiO$_2$, while maintaining a similar electric field dependence compared with NO layer.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 1997.04a
• /
• pp.334-337
• /
• 1997

This paper describes dielectric characteristics of SF$_{6}$ gas stressed by the non-oscillating and oscillating impulse voltages in inhomogeneous fields disturbed by metallic protrusion. The breakdown voltage-time (V-t) characteristics and breakdown voltage-gas pressure (V-p) characteristics and their characteristics are statistically investigated with positive and negative very fast transient overvoltages. The experiments were carried out using a needle-to-plane gap geometry in the gas pressure ranges from 0.1 to 0.5 MPa. The gap separation gas 22 mm, and the needle-shaped protrusions were made of stainless steel 10 mm in length and 1.0 mm in diameter.r.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2002.07b
• /
• pp.886-889
• /
• 2002

This paper describes the characteristic analyses and a new design of the bushing for the pole transformers. The mechanical breakdown of the upper part of the bushing was frequently occurred. This caused the leakage of mineral oil, resulted in the interruption of electric power. Therefore, the bushings were investigated by the material analytical method and Finite Element Method. The analyses were performed by the Induced Coupled Plasma(ICP), X-ray diffraction(XRD), Scanning Electron Microscopy(SEM), and Dielectric Thermal Analyzer(DETA). Also, the Von-Mises stress of the top part of bushing was determined by using ANSYS program. The Von-Mises stress of the newly designed bushing was reduced about 50%. Therefore, if we apply the newly designed bushing, the number of mechanical breakdown may be decreased.

• Journal of the Korean Ceramic Society
• /
• v.32 no.1
• /
• pp.31-36
• /
• 1995

(100) Si was oxidized in N2O ambient, and the film properties of oxynitride dielectrics were compared with pure SiO2. The growth rate, after pre-oxidation in O2/N2 ambient with raising temperature, is faster than that of O2/N2O treatment during the same condition. Nitrogen piles up at the interface of SiO2 and Si substrate and the content is about 2atom%. Comparing with pure SiO2, oxynitride dielectrics shows less dielectric breakdown failures and flat-band voltage shift, and good diffusion barrier property to dopant(BF2) is also observed.

• Journal of the Korean Institute of Telematics and Electronics A
• /
• v.30A no.1
• /
• pp.44-50
• /
• 1993

In an attempt to improve the electrical characteristics of tantalum pentoxide dielectric film, silicon substrate was reacted with a nitrogen plasma to form a silicon nitride of 50.angs. and then tantalum pentoxide thin films were formed by reactive sputtering in the same chamber. Breakdown field and leakage current density were measured to be 2.9 MV/cm and 9${\times}10^{8}\;A/cm^{2}$ respectively in these films whose thickness was about 180.angs.. With annealing at rectangular waveguides with a slant grid are investigated here. In particular, 900.deg. C in oxygen ambient for 100 minutes, breakdown field and leakage current density were improved to be 4.8 MV/cm and 1.61.6${\times}10^{8}\;A/cm^{2}$ respectively. It turned out that the electrical characteristics could also be improved by oxygen plasma post-treatment and the conduction mechanism at high electric field proved to be Schottky emission in these double-layered films.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2001.11b
• /
• pp.262-265
• /
• 2001

In order to investigate the water tree degradation behavior on XLPE cable, direct voltage of 200 to 800V has been applied to the material at $50^{\circ}C\sim100^{\circ}C$. and the water tree property has been correlated with voltage and temperature in this study. The leakage current was shown to increase as temperature increased and the Ohm's law was generally satisfied in this experiment though some experimental errors were found. The leakage current was shown to decrease and reach to the stable state with time. It was also shown that the time for the stabilization of leakage current was lessened as voltage increased