• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1999년도 춘계학술대회 논문집
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• pp.544-547
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• 1999

To develop the better insulants. the zeolite particle, which is aluminosilicate mineral, was filled In the DGEBA/MDA/SN epoxy resin system. Dynamic DSC curves of cured specimens with various contents of zeolite were observed and the glass transition temperature(T$_{g}$) was obtained. According to this result, we could carry out the experiment concerned with the dielectric breakdown strength around T$_{g}$ and find the limit temperature for the application of the DDEBA/MDA/SN system filled with natural zeolite. T$_{g}$ increased with the content of zeolite. As the temperature increased, the dielectric breakdown strength decreased rapidly, in the region of T$_{g}$. At the high temperature, the deterioration by electrical stress was activated. The diameter of puncture at the high temperature was larger 7han that at the room temperature.erature.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 춘계학술대회 논문집 초전도 자성체 연구회
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• pp.61-64
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• 2003

The degradation of the dielectric properties of insulating papers that were used under loaded conditions at cryogenic temperature was paid attention. Electrical and tensile stress properties of dielectric paper at cryogenic temperature have been investigated to optimum insulating design of high-Tc superconducting(HTS) cable. Tensile strength of PPLP in liquid nitrogen was high more than that of air, but tensile strain could know that decrease sharply. According as tensile strength increases, the breakdown stress of PPLP in liquid nitrogen was decreased.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 추계학술대회 논문집
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• pp.52-56
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• 2001

Experiments of 2 type on insulating compounds accomplished to change PVC using in URD(Underground) power cable jacketing. one was DB(Dielectric Breakdown) test on the pure base resins and the others were WVT(Water Vapor Transmission) test on the compounds which contained C/B(Carbon Black), anti-oxidant to base resin. a kind of specimens made by pressing to resin of pellet or lump form was HDPE(High Density Polyethylene), MDPE(Medium Density Polyehylene), LDPE(Low Density Polyethylene), LLDPE(Linear Low Density Polyethylene), PVC(Polyvinyl Chloride). As a results of AC DB and WVT test, we saw that strength of Insulation was HDPE> LLDPE = MDP E> LDPE and WVT ratio was HDPE

• KIEE International Transactions on Electrophysics and Applications
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• 제3C권3호
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• pp.86-90
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• 2003

This paper describes the electrical characteristics of Nomex paper employed as an insulating material for distribution transformers. The relative permittivities (dielectric constants) and tan$\delta$ (dielectric dissipation factors) were measured as dielectric characteristics and the partial discharge inception voltages (PDIVs) and breakdown voltages were also measured as electrical strength characteristics of Nomex paper. As a result, the permittivity and tan $\delta$ of Nomex paper demonstrated both temperature and frequency dependency. Of particular note, the permittivity of 0.18 mm Nomex paper was 2.4 according to the ASTM condition, The PDIVs and breakdown voltages were almost linearly increased with the thickness of Nomex paper. Furthermore, its electrical strength was superior to conventional Kraft paper.

• 한국표면공학회지
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• 제53권5호
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• pp.249-256
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• 2020

As the size of manufacturing equipment for LCD and OLED displays increases, replacement of existing heavy stainless steel components with light metals, such as aluminum alloys, is being more important in semiconducting and display manufacturing industries. To use aluminum alloys for components in semiconducting and display industries, it is important to develop a new anodization method for improved performance of anodic oxide films than conventional anodization method based on sulfuric acid. In this work, optimum applied current density and the best sealing methods for anodic oxide films in 3% oxalic acid were explored. Experimental results showed 2.5 A/dm2 is the best applied current density for improved hardness and dielectric breakdown voltage. Sealing of the anodic oxide films further improved their hardness, dielectric breakdown voltage and resistance to HCl, by which application of anodic oxide films become applicable for components in semiconducting and display industries.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1996년도 추계학술대회 논문집 학회본부
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• pp.209-211
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• 1996

The dielectric breakdown characteristics of DGEBA/MDA/SN system filled with $Al_2O_3$ under AC high electric field were investigated. As the filler content increased, the dielectric breakdown strength increased, but decreased at higher filler content than 5 phr. The probability of defects such as air bubbles, peel between filler and epoxy resin insulator, etc. increase proportionally to filler contents. Fillers blockade the treeing growth and relax the electric field at the tip of electrical tree and the treeing propagation rate decreases so that the strength showed higher strength at lower filler content than 5 phr.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2010년도 하계학술대회 논문집
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• pp.104-104
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• 2010

With the advent of nano-particle fillers in insulating materials, the insulating materials of superior quality have come to fore. In the recent past, nanocomposite LDPE/XLPE (Low Density Polyethylene/Cross Linked Polyethylene) power cable dielectrics have been synthesized. A preliminary evaluation of these new class of materials seem to show that, addition of small amounts of sub-micron inorganic fillers improved the dielectric properties of the composite, in particular, the volume resistivity, and the DC breakdown strength. The thermal behaviour, for example, the stability of composites against decomposition and ensuing electrical failure, do not seem to have been addressed. In a conventional XLPE insulated cable, the average thermal breakdown strength and maximum temperature at the onset of breakdown were seen to be markedly lower than the corresponding intrinsic breakdown strength and decomposition temperature. In this page, analysis of DC Breakdown of nano-composite insulating material for HVDC Cable is introduced.

• 전기학회논문지
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• 제66권4호
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• pp.659-665
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• 2017

Power semiconductor devices required the low on-resistance and high breakdown voltage. Wide band-gap materials opened a new technology of the power devices which promised a thin drift layer at an identical breakdown voltage. The diamond had the wide band-gap of 5.5 eV which induced the low power loss, high breakdown capability, low intrinsic carrier generation, and high operation temperature. We investigated the p-type pseudo-vertical diamond Schottky barrier diodes using a numerical simulation. The impact ionization rate was material to calculating the breakdown voltage. We revised the impact ionization rate of the diamond for adjusting the parallel-plane breakdown field at 10 MV/cm. Effects of the field plate on the breakdown voltage was also analyzed. A conventional diamond Schottky barrier diode without field plate exhibited the high forward current of 0.52 A/mm and low on-resistance of $1.71{\Omega}-mm$ at the forward voltage of 2 V. The simulated breakdown field of the conventional device was 13.3 MV/cm. The breakdown voltage of the conventional device and proposed devices with the $SiO_2$ passivation layer, anode field plate (AFP), and cathode field plate (CFP) was 680, 810, 810, and 1020 V, respectively. The AFP cannot alleviate the concentration of the electric field at the cathode edge. The CFP increased the breakdown voltage with evidences of the electric field and potential. However, we should consider the dielectric breakdown because the ideal breakdown field of the diamond is higher than that of the $SiO_2$, which is widely used as the passivation layer. The real breakdown voltage of the device with CFP decreased from 1020 to 565 V due to the dielectric breakdown.

• 한국정보통신학회:학술대회논문집
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• 한국해양정보통신학회 2002년도 추계종합학술대회
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• pp.779-783
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• 2002

변성기용 절연 재료로 사용되는 에폭시 수지를 시료로 선정, 5종의 배합비로 제작한 시편에 대해 절연 파괴 실험을 하며, 얻어진 데이터를 와이블 분포식을 이용, 경년 열화(經年劣和) 데이터의 통계 처리 방법을 제안하였다. 경화제 비율이 증가하면 에폭시 경화물의 에스터화로 인해 가교 밀도가 증가함으로써 저온에서의 파괴 강도가 높아졌으며, 유리 전이 온도(Tg) 영역인 11$0^{\circ}C$ 부근에서는 분자 운동이 활발해짐으로써 급격히 파괴 강도가 저하하였다. 또한, 충진제를 첨가한 경우 접합 계면에 전자가 가속되어 전반적인 파괴 강도는 무충진에 비해 낮게 나타났으며, 실란 처리를 한 경우에는 계면 접합 상태가 개선되어 충진제만을 첨가한 시료보다 좋은 절연성을 나타냈다. 와이블 분포의 분석으로부터 기기 절연의 허용 파괴 확률을 0.1% 이하로 낮추기 위해서는 허용인가 전계값이 21.5 MV/cm 이하가 되어야함을 알 수 있었다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 하계학술대회 논문집
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• pp.299-302
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• 2001

In this study, we are studied the electrical conduction and dielectric breakdown properties of insulating varnish. In order to analyze the molecular structure and physical properties of insulating varnishs, FT-lR was used. As the result, it can be confirmed that the peak of alcoholic group appeared in wavenumbers 3452[cm$\^$-1], the peak of =CH appeared in 3080[cm$\^$-1] and the peak of -CH appeared in 2919[cm$\^$-1] respectively. The following results were obtained from electrical properties of insulating varnish. The amplitude of current density was decreased by thickness increasing and the current density was effected by the thermal energy from external due to temperature increasing. In study temperature dependence of dielectric strength, the specimen of 10[$\mu\textrm{m}$] thickness was measurement from room temperature to 180[$^{\circ}C$]. It is confirmed that the temperature regions below 60[$^{\circ}C$] is due to electron avalanche breakdown and the temperature regions over 60[$^{\circ}C$] is due to free volume breakdown which makes electron movements easy.