• The Transactions of the Korean Institute of Electrical Engineers P
• /
• v.67 no.4
• /
• pp.214-220
• /
• 2018

Light sources induced by gas discharge using rare gases have been widely used in the thin film deposition, the surface modification and the polymer etching. A dielectric barrier discharge (DBD) has been developed in order to consistently emit light and control the wavelength of the emission light. However, much research on the characteristics of the movement of discharge particles is required to improve the efficiency of the light lamp and the life-time of the light apparatus in detail. In this paper, we developed a He DBD discharge simulation tool and investigated the characteristics of discharge particles which were electrons, two positive ions ($He^+$, $He_2^+$) and 5 excited particles ($He^*(1S)$, $He^*(3S)$, $He^*$, $He^{**}$, $He^{***}$). The discharge currents showed the transition from pulse mode to continuous mode with the increase of power. With the accumulated charges on the barrier walls, the discharge current was rapidly increased and caused oscillation of the discharge voltage. As the gas pressure increased, $He_2^+$ and $He^*(3S)$ became the dominant activated particles. The input power was mostly consumed by electrons and $He_2^+$ ion. And the change curve showed that power consumption by electrons increased more with gas pressure than with source voltage or frequency.

• The KSFM Journal of Fluid Machinery
• /
• v.15 no.3
• /
• pp.46-50
• /
• 2012

Plasma actuator makes parallel flow on the wall surface by the interaction between plasma and neutral air particles. Dielectric barrier discharge (DBD) plasma actuator is widely studied as one type of plasma actuators, which consists of one electrode exposed to the environmental gas and the other encapsulated by a dielectric material. This paper is experimentally focused on the performance of DBD plasma actuator mounted on a flat plate, which depends on kinds of the electrode materials, their thicknesses and the supplied voltage including its frequency. We measured the velocity magnitudes of the induced flow by a stagnation probe as a performance parameter of the plasma actuators. The velocity profiles of the flow induced by the plasma actuators are similar in all measurement cases. The magnitude of the induced velocity is strongly influenced by the thickness of the electrodes and the frequency of the input voltage. The performance of DBD plasma actuators is related to the electric properties of the electrode materials such as the ionization energy and the electrical resistivity.

• Journal of Environmental Science International
• /
• v.20 no.5
• /
• pp.623-630
• /
• 2011

This study investigated the degradation of N, N-Dimethyl-4-nitrosoaniline (RNO, indicator of the generation of OH radical) by using dielectric barrier discharge (DBD) plasma. The DBD plasma reactor of this study consisted of a quartz dielectric tube, titanium discharge (inner) and ground (outer) electrode. The effect of shape (rod, spring and pipe) of ground electrode, diameter (9~30 mm) of ground electrode of spring shape and inside diameter (4~13 mm) of quartz tube, electrode diameter (1~4 mm), electrode materials (SUS, Ti, iron, Cu and W), height difference of discharge and ground electrode (1~15.5 cm) and gas flow rate (1~7 L/min) were evaluated. The experimental results showed that shape of ground electrode and materials of ground and discharge electrode were not influenced the RNO degradation. The thinner the diameter of discharge and ground electrode, the higher RNO degradation rate observed. The effect of height gap of discharge between ground electrode on RNO degradation was not high within the experimented value. Among the experimented parameters, inside diameter of quartz tube and gas flow rate were most important parameters which are influenced the decomposition of RNO. Optimum inside diameter of quartz tube and gas flow rate were 7 mm and 4 L/min, respectively.

• Journal of Environmental Science International
• /
• v.23 no.6
• /
• pp.1165-1173
• /
• 2014

For the field application of dielectric barrier discharge plasma reactor in nutrient solution culture, a filtration-DBD (dielectric barrier discharge) plasma reactor was investigated for the Ralstonia solanacearum which causes bacterial wilt in aquiculture. The filtration-DBD plasma reactor system of this study was consisted of filter, plasma reactor, reservoir. The DBD plasma reactor consisted of a quartz dielectric tube, discharge electrode (inner) and ground electrode (outer). The experimental results showed that the inactivation of R. solanacearum with filter media type in filter reactor ranked in the following order: anthracite > fiber ball > sand > ceramic ball > quartz ceramic. In filtration + plasma process, disinfection effect with the voltage was found to small. In disinfection time of 120 minutes, residual R. solanacearum concentration was 1.17 log (15 CFU/mL). When the continuous disinfection time was 120 minute, disinfection effect was thought to keep the four days. In sporadic operation mode of 30 minutes disinfection - 24 hours break, residual R. solanacearum concentration after five days was 0.3 log (2 CFU/mL). It is considered that most of R. solanacearum has been inactivated substantially.

• The Transactions of The Korean Institute of Electrical Engineers
• /
• v.56 no.12
• /
• pp.2166-2172
• /
• 2007

In this study a low-signal equivalent circuit based on the Double Schottky Barrier model is proposed for ZnO-based varistor. Since pin-lead inductance and stray capacitance are considered in pin-lead type ZnO varistor these inductance and capacitance could be removed from the experimental dielectric data of the varistor. According to the equivalent circuit simulation results the higher the varistor-voltage of varistor sample the capacitance of dielectric layer is larger, and the capacitances of semiconducting layer and depletion layer are smaller, while the parallel resistances of semiconducting layer and depletion layer are more larger values. Spectra of the dielectric loss factor $tan{\delta}$ show 2 peaks in low frequency and high frequency regions respectively. The low-frequency peak is due to the relaxation by deep donors and the high-frequency peak is due to the relaxation by shallow donors. Above results are well consistent with the theoretical mechanism of ZnO varistor.

• Transactions on Electrical and Electronic Materials
• /
• v.14 no.6
• /
• pp.329-333
• /
• 2013

SiOC films were prepared by capacitively coupled plasma chemical vapor deposition, and the correlation between the binding energy by X-ray photoelectron spectroscopy and Arrhenius equation for ionization energy was studied. The ionization energy decreased with increase of the potential barrier, and then the dielectric constant also decreased. The binding energy decreased with increase of the potential barrier. The dielectric constant and electrical characteristic of SiOC film was obtained by Arrhenius equation. The dielectric constant of SiOC film was decreased by lowering the polarization, which was made from the recombination between opposite polar sites, and the dissociation energy during the deposition. The SiOC film with the lowest dielectric constant had a flat surface, which depended on how carbocations recombined with other broken bonds of precursor molecules, and it became a fine cross-linked structure with low ionization energy, which contributed to decreasing the binding energy by Si 2p, C 1s electron orbital spectra and O 1s electron orbital spectra. The dielectric constant after annealing decreased, owing to the extraction of the $H_2O$ group, and lowering of the polarity.

• Korean Chemical Engineering Research
• /
• v.45 no.2
• /
• pp.183-189
• /
• 2007

We have investigated the oxidation of gas phase elemental mercury using dielectric barrier discharge (DBD). In the DBD process, active species such as $O_3$, OH, O and $HO_2$ are generated by collisions between electrons and gas molecules. Search active species convert elemental mercury into mercury oxide which is deposited into the wall of DBD reactor because of its low vapor pressure. The oxidation efficiency of elemental mercury has been decreased from 60 to 30% by increasing the initial concentration of the elemental mercury from 72 to $655{\mu}g/Nm^3$. The gas retention time at the DBD reactor has showed the little effect on the oxidation efficiency. The more oxygen concentration has induced the more oxidation of elemental mercury, whereas there has been no appreciable oxidation within pure $N_2$ discharge. It has indicated that oxygen atom and ozone, generated in air condition determine the oxidation of elemental mercury.

• Korean Chemical Engineering Research
• /
• v.45 no.5
• /
• pp.455-459
• /
• 2007

Plasma catalytic methane conversion was carried out in the presence of sol-gel derived $Pt/TiO_2$ catalysts within a dielectric-barrier discharge (DBD) reactor. Plasma-assisted reduction (PAR) was applied to reduce the prepared $Pt/TiO_2$ catalysts in DBD reactor, and prepared catalysts were successively reduced by PAR within 20 min irrespective of the Pt loading and the calcination temperature. The highest methane conversion was 40% when 3 wt% $Pt/TiO_2$ and 5 wt% $Pt/TiO_2$ catalysts were used after calcination at $600^{\circ}C$. The selectivities of light alkanes ($C_2H_6$, $C_3H_8$, $C_4H_{10}$) were highly increased when $Pt/TiO_2$ catalysts were used in DBD reactor.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
• /
• v.28 no.8
• /
• pp.646-652
• /
• 2017

The effect of plasma on mono-static radar cross section under atmospheric pressure is demonstrated when the dielectric barrier discharge actuator has plasma layer. The volume of plasma layer is increased by using planar array of electrodes. Because the incident wave has electric field which is perpendicular to the electrode array, the undesired effect on radar cross section caused by structure of plasma actuator is minimized. In experiments, mono-static radar cross section is measured at the frequencies from 2 GHz to 25 GHz. The generated plasma reduces the radar cross section at frequencies above 18 GHz, and the amount of reduction reaches to 8 dB in maximum. The reduction can be controlled by changing the peak-to-peak voltage from high voltage generator. The result shows the possibility of plasma as a flexible radar cross section controller.

• Korean Journal of Materials Research
• /
• v.9 no.12
• /
• pp.1216-1221
• /
• 1999

GaN films were deposited on sapphire [$Al_2O_3(0001)$] substrates at relatively low temperature by MOCVD using N-atom source based on a Dielectric Barrier Discharged method. Ammonia gas($NH_3$is commonly used as an N-source to grow GaN films in conventional MOCVD process, and heating to high temperature is required to provide sufficient dissociation of $NH_3$. We used a dielectric barrier discharge method instead of $NH_3$ to grow GaN film relatively low temperature. DBD is a type of discharge, which have at least one dielectric material as a barrier between electrode. DBD is a type of controlled microarc that can be operated at relatively high gas pressure. Crystallinity and surface morphology depend on growth temperature and buffer layer growth. With the DBD-MOCVD method, wurtzite GaN which is dominated by the (0001) reflection was successfully grown on sapphire substrate even at $700^{\circ}C$.