• 센서학회지
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• 제31권6호
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• pp.361-365
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• 2022

Advanced packaging demands are driven by the need for dense integration systems. Consequently, stacked packaging technology has been proposed instead of reducing the ultra-fine patterns to secure economic feasibility. This study proposed an effective packaging process technology for semiconductor devices using a 9-inch dicing die attach film (DDAF), wherein the die attach and dicing films were combined. The process involved three steps: tape lamination, dicing, and bonding. Following the grinding of a silicon wafer, the tape lamination process was conducted, and the DDAF was arranged. Subsequently, a silicon wafer attached to the DDAF was separated into dies employing a blade dicing process with a two-step cut. Thereafter, one separated die was bonded with the other die as a substrate at 130 ℃ for 2 s under a pressure of 2 kgf and the chip was hardened at 120 ℃ for 30 min under a pressure of 10 kPa to remove air bubbles within the DAF. Finally, a curing process was conducted at 175 ℃ for 2 h at atmospheric pressure. Upon completing the manufacturing processes, external inspections, cross-sectional analyses, and thermal stability evaluations were conducted to confirm the optimality of the proposed technology for application of the DDAF. In particular, the shear strength test was evaluated to obtain an average of 9,905 Pa from 17 samples. Consequently, a 3D integration packaging process using DDAF is expected to be utilized as an advanced packaging technology with high reliability.

• 한국산학기술학회:학술대회논문집
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• 한국산학기술학회 2001년도 춘계학술대회 발표논문집
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• pp.261-264
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• 2001

반도체 생산현장에서의 생산성 향상과 집약적 기술의 보유는 장비 도입과 잉여 기술자 또는 숙련기술자를 교육하는 과정을 요구한다. 본 연구에서는 (주)옵토텍과 산학협동의 일환으로 장비의 교육과 관련하여 교육 소요시간을 줄이고, 주요 구동 Procedure를 매개로 하는 구동 인력의 기술력 향상과 구동 안전성을 도모하기 위하여 PCB Automatic Die Bonder(AD809-06, ASM)의 지능형 구동 학습전문화 시스템을 구축하려는 것이다.

• 한국정밀공학회지
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• 제17권2호
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• pp.89-96
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• 2000

This paper describes the characteristic of die finishing to obtain smooth surface using electro-chemical grinding after cutting process. Electro-chemical grinding is possible under lower load and tool wear comparing with those in the mechanical grinding. Conventionally, if the metal bonding material of the grinding wheel is directly t contacted with workpiece, the current is circulated without electrolytic phenomena. Sometimes, electrical discharge is occurred between tool and workpiece. To cope with this problem, the metal-resin bonded pellet was used in this study. This pellet is composed of optimal volume of metal and resin powders and its characteristics are changable with the each volume of powders. Finally, high efficient die finishing is realized using metal resin bonded pellet in electro-chemical grinding.

• 소성∙가공
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• 제6권4호
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• pp.346-356
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• 1997

The fiber orientation distribution and interface bonding in hot extrusion process have an effect on the maechanical properties of metal matrix composites(MMC's). Aluminium alloy matrix composites reinforced with alumina short fibers are fabricated by compocasting method. MMC's billets are extruded at high temperature through conical and curved shaped dies with various extrusion ratios and temperature. This present study was directed to describe the systematic correlation between extrusion die shape and subsequent results such as fiber breakage, fiber orientation and tensile strength to hot extruded MMC's billet. Extrusion load, tensile strength and hardness for variation of extrusion ratios and temperature are investigated to examine mechanical properties of extruded MMC's SEM fractographs of tensile specimens are observed to analyze the fracture mechanism.

• 마이크로전자및패키징학회지
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• 제29권4호
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• pp.41-47
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• 2022

Ag sintering technologies have received great attention as it was applied to the inverter of Tesla's electric vehicle Model III. Ag sinter bonding technology has advantages in heat dissipation design as well as high-temperature stability due to the intrinsic properties of the material, so it is useful for practical use of SiC and GaN devices. This study was carried out to understand the sinter joining temperature effect on the robust Ag sintered joints in air without pressure within 10 min. Electroplated Ag finished Cu dies (3 mm × 3 mm × 2 mm) and substrates (10 mm × 10 mm × 2 mm) were introduced, respectively, and nano Ag paste was applied as a bonding material. The sinter joining process was performed without pressure in air with the bonding temperature as a variable of 175 ℃, 200 ℃, 225 ℃, and 250 ℃. As results, the bonding temperature of 175 ℃ caused 13.21 MPa of die shear strength, and when the bonding temperature was raised to 200 ℃, the bonding strength increased by 157% to 33.99 MPa. When the bonding temperature was increased to 225 ℃, the bonding strength of 46.54 MPa increased by about 37% compared to that of 200 ℃, and even at a bonding temperature of 250 ℃, the bonding strength exceeded 50 MPa. The bonding strength of Ag sinter joints was directly influenced by changes in the necking thickness and interfacial connection ratio. In addition, developments in the morphologies of the joint interface and porous structure have a significant effect on displacement. This study is systematically discussed on the relationship between processing temperatures and bonding strength of Ag sinter joints.

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2018년도 춘계학술대회 논문집
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• pp.102-102
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• 2018

Electronic industry had required the finer size and the higher performance of the device. Therefore, 3-D die stacking technology such as TSV (through silicon via) and micro-bump had been used. Moreover, by the development of the 3-D die stacking technology, 3-D structure such as chip to chip (c2c) and chip to wafer (c2w) had become practicable. These technologies led to the appearance of HBM (high bandwidth memory). HBM was type of the memory, which is composed of several stacked layers of the memory chips. Each memory chips were connected by TSV and micro-bump. Thus, HBM had lower RC delay and higher performance of data processing than the conventional memory. Moreover, due to the development of the IT industry such as, AI (artificial intelligence), IOT (internet of things), and VR (virtual reality), the lower pitch size and the higher density were required to micro-electronics. Particularly, to obtain the fine pitch, some of the method such as copper pillar, nickel diffusion barrier, and tin-silver or tin-silver-copper based bump had been utillized. TCB (thermal compression bonding) and reflow process (thermal aging) were conventional method to bond between tin-silver or tin-silver-copper caps in the temperature range of 200 to 300 degrees. However, because of tin overflow which caused by higher operating temperature than melting point of Tin ($232^{\circ}C$), there would be the danger of bump bridge failure in fine-pitch bonding. Furthermore, regulating the phase of IMC (intermetallic compound) which was located between nickel diffusion barrier and bump, had a lot of problems. For example, an excess of kirkendall void which provides site of brittle fracture occurs at IMC layer after reflow process. The essential solution to reduce the difficulty of bump bonding process is copper to copper direct bonding below $300^{\circ}C$. In this study, in order to improve the problem of bump bonding process, copper to copper direct bonding was performed below $300^{\circ}C$. The driving force of bonding was the self-annealing properties of electrodeposited Cu with high defect density. The self-annealing property originated in high defect density and non-equilibrium grain boundaries at the triple junction. The electrodeposited Cu at high current density and low bath temperature was fabricated by electroplating on copper deposited silicon wafer. The copper-copper bonding experiments was conducted using thermal pressing machine. The condition of investigation such as thermal parameter and pressure parameter were varied to acquire proper bonded specimens. The bonded interface was characterized by SEM (scanning electron microscope) and OM (optical microscope). The density of grain boundary and defects were examined by TEM (transmission electron microscopy).

• 한국주조공학회지
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• 제41권6호
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• pp.535-542
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• 2021

본 연구에서는 주철-알루미늄 이종재료의 계면결합강도를 향상시키기 위하여 탈흑연 열처리를 통해 주철 표면에서 일정 깊이까지의 흑연을 제거하였다. 열처리 시간이 증가함에 따라 흑연이 제거되는 깊이는 증가하였으며, 열처리 시간과 깊이 사이에 선형 관계가 나타났다. 일정 깊이의 흑연이 제거된 주철에 알루미늄을 다이캐스팅 공법으로 주조접합하여 주철에서 흑연이 제거된 공간을 알루미늄으로 채운 후, 계면 반응 및 알루미늄 침투 깊이를 조사하고 계면접합강도를 평가하였다. 다이캐스팅 공법을 통한 알루미늄은 탈흑연 열처리된 주철 표면에서 일정한 깊이까지 채워지는 것으로 확인되었으며, 주철-알루미늄 계면에 금속간화합물이 생성되지는 않은 것으로 확인되었다. 계면접합강도는 열처리 시간과는 큰 관계없이 90MPa 수준의 접합강도를 나타내었으며 이는 탈흑연 열처리를 하지 않은 소재의 접합강도 12MPa에 비해 매우 높은 강도이며, 주철의 탈흑연 영역에서 고압 다이캐스팅 공정에 의해 침투된 알루미늄 용탕이 응고되면서 언더컷 구조의 기계적 결합에 의한 것으로 생각된다.

• Restorative Dentistry and Endodontics
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• 제20권1호
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• pp.152-163
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• 1995

This experiment was performed to observe the adhesion pattern and microleakage in the gingival margin according to variation in the resin cement thickness which results from thickness of Die spacer. which is considered to effect the adaptability of the composite resin inlays. Clearfil CR inlays were fabricated on stone models with CR Sep applicated once and Nice fit twice, 4 times, and 6 times each. After 2nd curing within the CRC-100 oven, CR inlays were cemented with CR inlay cement. Dye(2% methylene blue) penetration and adhesion pattern were evaluated after sectioning of gingival margin into :3 pieces. The results were as follows ; 1. The thickness of resin cement showed unevenchanging pattern with that of die spacer, namely, it was increased until 4 times' application of Nice-Fit but was decreased with 6 times' application of that. 2. The degree of dye penetration wasn't affected by cement thickness within a limited value. 3. Most of dye penetration was shown through the interface between cement and enamel rather than the interface between cement and CR inlay. This shows that the affinity of resin cement for CR inlay was superior to the adhesive strength with tooth structure. 4. No gap was found at the interface between enamel and cement but some showed separation between dentin and cement. It is concidered that the contraction force of cement was less than the bond strength with the enamel. 5. Lots of voids were found in the CR inlay and resin cement. There was a pooling tendency of bonding agent and cement in the axiogingival line angle portion. 6. In some specimens, cracks were shown in enamel margin. From this it could be considered that cavity preparation and surface treatment weakened the tooth structure.

• 한국광학회지
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• 제24권6호
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• pp.342-346
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• 2013

고출력 LED 패키지의 방열 특성 향상을 위하여, 다이 접합부에 실리콘 접착제와 금속 패턴의 병렬 접합 구조를 적용하여 열 유동 해석을 수행하였다. 그 결과, LED 칩에서 발생한 열은 주로 금속 패턴 구조물을 통해 기판으로 효과적으로 전달되고 있으나, 패턴 구조물의 크기에 따라 효율의 차이가 있음을 확인하였고, 그 효과를 정량화하기 위해 정규화 길이를 도입하여 칩과 금속 패턴 구조물의 면적에 따른 열 저항을 비교하였다. 정규화 길이가 길어지면 금속 패턴 구조물에 의한 열 우회 경로가 칩에 고르게 분포하여 열 저항이 감소하였으며, 그 값은 단순 병렬 열 저항 이론 값보다 다소 큰 수치로 수렴하지만, 충분한 열 저항 개선 효과를 얻을 수 있었다.

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2005년도 춘계학술대회 논문집
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• pp.499-502
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• 2005

A process map has been developed, which can identify the process conditions for weak mechanical bonding at the contact surface during the direct extrusion of a Cu-Ti bimetal bar. Bonding mechanism between Cu and Ti was assumed as a cold pressure welding. Then, the plastic deformation at the contact zone causes mechanical bonding and a new bonding criterion for pressure welding was developed as a function of the principal stretch ratio and normal pressure at the contact surface by analyzing micro local extrusion at the contact zone. Finite element analyses for extrusion of Cu-Ti bimetal bars were performed for various process conditions. The deformation history at the contact surface was traced and the proposed new bonding criterion was applied to predict whether the mechanical bonding at the Cu-Ti contact surface happens. Finally, a process map for the extrusion of Cu-Ti bimetal bar is suggested.