• 제목/요약/키워드: dewaxer

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Removal of Organic Wax and Particles on Final Polished Wafer by Ozonated DI Water

  • Yi, Jae-Hwan;Lee, Seung-Ho;Kim, Tae-Gon;Lee, Gun-Ho;Choi, Eun-Suck;Park, Jin-Goo
    • 한국재료학회지
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    • 제18권6호
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    • pp.307-312
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    • 2008
  • In this study, a new cleaning process with a low cost of ownership (CoO) was developed with ozonated DI water ($DIO_3$). An ozone concentration of 40 ppm at room temperature was used to remove organic wax film and particles. Wax residues thicker than $200\;{\AA}$ remained after only a commercial dewaxer treatment. A $DIO_3$ treatment in place of a dewaxer showed a low removal rate on a thick wax layer of $8000\;{\AA}$ due to the diffusion-limited reaction of ozone. A dewaxer was combined with a $DIO_3$ rinse to reduce the wax removal time and remove wax residue completely. Replacing DI rinse with the $DIO_3$ rinse resulted in a surface with a contact angle of less than $5^{\circ}$, which indicates no further cleaning steps would be required. The particle removal efficiency (PRE) was further improved by combining a SC-1 cleaning step with the $DIO_3$ rinsing process. A reduction in the process time was obtained by introducing $DIO_3$ cleaning with a dewaxing process.