• Title/Summary/Keyword: device simulations

Search Result 494, Processing Time 0.025 seconds

Rudder Gap Cavitation Suppression Using Gap Flow Blocking Devices

  • Oh, Jung-Keun;Lee, Chang-Min;Lee, Hee-Bum;Rhee, Shin-Hyung;Suh, Jung-Chun;Kim, Hyo-Chul
    • Journal of Ship and Ocean Technology
    • /
    • v.12 no.4
    • /
    • pp.20-31
    • /
    • 2008
  • Development of rudder gap flow blocking device for lift augmentation and cavitation suppression is presented. In order to verify the performance of this device, cavitation visualization and surface pressure measurements were carried out in a cavitation tunnel. Numerical simulations were conducted using a computational fluid dynamics code for more rigorous verification. The new rudder system is equipped with cam devices, which effectively close the gap between the horn/pintle and movable wing parts. The experimental and computational results show that the proposed rudder system is superior to the conventional rudder systems in terms of the lift augmentation and cavitation suppression.

Characteristics of High Power Semiconductor Device Losses in 5MW class PMSG MV Wind Turbines

  • Kwon, Gookmin;Lee, Kihyun;Suh, Yongsug
    • Proceedings of the KIPE Conference
    • /
    • 2014.07a
    • /
    • pp.367-368
    • /
    • 2014
  • This paper investigates characteristics of high power semiconductor device losses in 5MW-class Permanent Magnet Synchronous Generator (PMSG) Medium Voltage (MV) wind turbines. High power semiconductor device of press-pack type IGCT of 6.5kV is considered in this paper. Analysis is performed based on neutral point clamped (NPC) 3-level back-to-back type voltage source converter (VSC) supplied from grid voltage of 4160V. This paper describes total loss distribution at worst case under inverter and rectifier operating mode for the power semiconductor switches. The loss analysis is confirmed through PLECS simulations. In addition, the loss factors due to di/dt snubber and ac input filter are presented. The investigation result shows that IGCT type semiconductor devices generate the total efficiency of 97.74% under the rated condition.

  • PDF

Study on Design and Electric Characteristics of MOS Controlled Thyristor for High Breakdown Voltage (고내압용 MOS 구동 사이리스터 소자의 설계 및 전기적 특성에 관한 연구)

  • Hong, Young-Sung;Chung, Hun-Suk;Jung, Eun-Sik;Kang, Ey-Goo
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
    • /
    • v.24 no.10
    • /
    • pp.794-798
    • /
    • 2011
  • This paper was carried out design of 1,700 V Base Resistance Thyristor for fabrication. We decided conventional BRT (base resistance thyristor) device and Trench Gate type one for design. we carried out device and process simulation with T-CAD tools. and then, we have extracted optimal device and process parameters for fabrication. we have analysis electrical characteristics after simulations. As results, we obtained 2,000 V breakdown voltage and 3.0 V Vce,sat. At the same time, we carried out field ring simulation for obtaining high voltage.

Modifications to Hydraulic Structures for Anti-submerged Vortex in a Multi Pump Intake using CFD simulation Technique (수리구조 개선을 통한 다중 펌프 흡수정에서 발생하는 보텍스 방지 대책 수립에 관한 연구)

  • Park, No-Suk;Kim, Seong-Su;Jeong, Woo-Chang;Kim, Jong-Oh
    • Journal of Korean Society of Water and Wastewater
    • /
    • v.25 no.1
    • /
    • pp.31-39
    • /
    • 2011
  • In order to suggest the methodology for achieving anti-vortex device within multi pump intake well, CFD(Computational Fluid Dynamics) simulation were conducted for two alternative suggestions. Multi-intake sump model with anti-vortex device basins were designed and the characteristics of submerged vortex were investigated in the flow field by numerical simulation. From the results of simulations, to install the horizontal plate and vertical cross plates within basins were effective for preventing air-induction vortex.

A Study of Electromechanical Nanotube Memory Device using Molecular Dynamics

  • Lee Jun-Ha;Lee Hoong-Joo;Kwon Oh-Keun;Kang Jeong-Won
    • Proceedings of the Korean Society Of Semiconductor Equipment Technology
    • /
    • 2005.09a
    • /
    • pp.27-30
    • /
    • 2005
  • A nanoelectromechanical (NEM) switching device based on carbon nanotube (CNT) was investigated using atomistic simulations. The model schematics for a CNT based three-terminal NEM switching device fabrication were presented. for the CNT-based three-terminal NEM switch, the interactions between the CNT-lever and the drain electrode or the substrate were very important. When the electrostatic force applied to the CNT-lever was the critical point, the CNT-lever was rapidly bent because of the attractive foroe between the CNT-lever and the drain. The energy curves for the pull-in and the pull-out processes showed the hysteresis loop that was induced by the adhesion of the CNT on the copper, which was the interatomic interaction between the CNT and the copper.

  • PDF

Comparison of Efficiency of Flash Memory Device Structure in Electro-Thermal Erasing Configuration (플래시메모리소자의 구조에 대한 열적 데이터 삭제 효율성 비교)

  • Kim, You-Jeong;Lee, Seung-Eun;Lee, Khwang-Sun;Park, Jun-Young
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
    • /
    • v.35 no.5
    • /
    • pp.452-458
    • /
    • 2022
  • The electro-thermal erasing (ETE) configuration utilizes Joule heating intentionally generated at word-line (WL). The elevated temperature by heat physically removes stored electrons permanently within a very short time. Though the ETE configuration is a promising next generation NAND flash memory candidate, a consideration of power efficiency and erasing speed with respect to device structure and its scaling has not yet been demonstrated. In this context, based on 3-dimensional (3-D) thermal simulations, this paper discusses the impact of device structure and scaling on ETE efficiency. The results are used to produce guidelines for ETEs that will have lower power consumption and faster speed.

Experimental and Simulation Study of Barrier Properties in Schottky Barrier Thin-Film Transistors with Cr- and Ni- Source/Drain Contacts (Cr- 및 Ni- 소스/드레인 쇼트키 박막 트랜지스터의 장벽 특성에 대한 실험 및 모델링 연구)

  • Jung, Ji-Chul;Moon, Kyoung-Sook;Koo, Sang-Mo
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
    • /
    • v.23 no.10
    • /
    • pp.763-766
    • /
    • 2010
  • By improving the conducting process of metal source/drain (S/D) in direct contact with the channel, schottky barrier metal-oxide-semiconductor field effect transistors (SB MOSFETs) reveal low extrinsic parasitic resistances, offer easy processing and allow for well-defined device geometries down to the smallest dimensions. In this work, we investigated the arrhenius plots of the SB MOSFETs with different S/D schottky barrier (SB) heights between simulated and experimental current-voltage characteristics. We fabricated SB MOSFETs using difference S/D metals such as Cr (${\Phi}_{Cr}$ ~4.5 eV) and Ni (${\Phi}_{Ni}$~5.2 eV), respectively. Schottky barrier height (${\Phi}_B$) of the fabricated devices were measured to be 0.25~0.31 eV (Cr-S/D device) and 0.16~0.18 eV (Ni-S/D device), respectively in the temperature range of 300 K and 475 K. The experimental results have been compared with 2-dimensional simulations, which allowed bandgap diagram analysis.

Development of Sensor Device and Probability-based Algorithm for Braille-block Tracking (확률론에 기반한 점자블록 추종 알고리즘 및 센서장치의 개발)

  • Roh, Chi-Won;Lee, Sung-Ha;Kang, Sung-Chul;Hong, Suk-Kyo
    • Journal of Institute of Control, Robotics and Systems
    • /
    • v.13 no.3
    • /
    • pp.249-255
    • /
    • 2007
  • Under the situation of a fire, it is difficult for a rescue robot to use sensors such as vision sensor, ultrasonic sensor or laser distance sensor because of diffusion, refraction or block of light and sound by dense smoke. But, braille blocks that are installed for the visaully impaired at public places such as subway stations can be used as a map for autonomous mobile robot's localization and navigation. In this paper, we developed a laser sensor stan device which can detect braille blcoks in spite of dense smoke and integrated the device to the robot developed to carry out rescue mission in various hazardous disaster areas at KIST. We implemented MCL algorithm for robot's attitude estimation according to the scanned data and transformed a braille block map to a topological map and designed a nonlinear path tracking controller for autonomous navigation. From various simulations and experiments, we could verify that the developed laser sensor device and the proposed localization method are effective to autonomous tracking of braille blocks and the autonomous navigation robot system can be used for rescue under fire.

Calibration of Parallel Manipulators using a New Measurement Device (새로운 측정장비를 이용한 병렬구조 로봇의 보정에 관한)

  • Rauf, Abdul;Kim, Sung-Gaun;Ryu, Je-Ha
    • Proceedings of the KSME Conference
    • /
    • 2003.11a
    • /
    • pp.1494-1499
    • /
    • 2003
  • Kinematic calibration is a process whereby the actual values of geometric parameters are estimated so as to minimize the error in absolute positioning. Measuring all components of Cartesian posture, particularly the orientation, can be difficult. With partial pose measurements, all parameters may not be identifiable. This paper proposes a new device that can be used to identify all kinematic parameters with partial pose measurements. Study is performed for a six degree-of-freedom fully parallel Hexa Slide manipulator. The device, however, is general and can be used for other parallel manipulators. The proposed device consists of a link with U joints on both sides and is equipped with a rotary sensor and a biaxial inclinometer. When attached between the base and the mobile platform, the device restricts the end-effector's motion to five degree-of-freedom and can measure position of the end-effector and one of its rotations. Numerical analyses of the identification Jacobian reveal that all parameters are identifiable. Computer simulations show that the identification is robust for the errors in the initial guess and the measurement noise.

  • PDF

Transmission Protocol for Cellular-Aided Device-to-Device Communication (기지국 협력 Device-to-Device 통신 전송 프로토콜 연구)

  • Jeon, Sang-Woon;Choi, Sang Won;Kim, Juyeop;Shin, Won-Yong
    • The Journal of Korean Institute of Communications and Information Sciences
    • /
    • v.41 no.11
    • /
    • pp.1619-1629
    • /
    • 2016
  • We study an efficient transmission protocol for the cellular-aided device-to-device communication model. In particular, two source-destination pairs communicate with the help of unlink and downlink cellular links. For the proposed scheme, two transmitters send their messages and the base station and two receivers receive at the first phase. Then, at the second phase, the base station sends the XOR of the messages to two receivers and they try to decode their own messages from the received signals after the first and second phases. We analyze the outage-based throughput achievable by the proposed scheme and demonstrate by simulations that the proposed scheme provides an improved outage performance compared to the conventional device-to-device communication schemes.