• Title/Summary/Keyword: device simulations

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PZT stack actuator-based hybrid mount system for mitigating micro-vibration of vibration isolation table (제진 테이블의 미진동 저감을 위한 PZT stack 가력기 기반 복합형 마운트 시스템)

  • Moon, Yeong-Jong;Jang, Dong-Doo;Moon, Seok-Jun;Choi, Sang-Min;Jung, Hyung-Jo
    • Proceedings of the Korean Society for Noise and Vibration Engineering Conference
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    • 2009.10a
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    • pp.292-298
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    • 2009
  • This paper investigates the control performance of the proposed hybrid mount system for vibration isolation table. The hybrid mount system consists of an air spring as a passive device and a PZT stack actuator as an active device in series. The feasibility of the PZT stack actuator as an active actuator was examined through the simple experiments. After that, a series of numerical simulations were carried out to evaluate the control performance of the proposed hybrid mount system. The equations of motion of the table with a set of hybrid mount systems consisting of four devices are derived. The air spring is considered as a 1 spring and 1 dashpot elements, and PID control algorithm is adopted to estimate the control force. The results of the numerical simulations presents that the proposed hybrid mount system could be the promising control system for vibration isolation table.

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An Atomistic Modeling for Electromechanical Nanotube Memory Study (원자단위 Electromechanical 모델링을 통한 나노튜브 메모리 연구)

  • Lee, Kang-Whan;Kwon, Oh-Keun
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.19 no.2
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    • pp.116-125
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    • 2006
  • We have presented a nanoelectromechanical (NEM) model based on atomistic simulations. Our models were applied to a NEM device as called a nanotube random access memory (NRAM) operated by an atomistic capacitive model including a tunneling current model. We have performed both static and dynamic analyses of a NRAM device. The turn-on voltage obtained from molecular dynamics simulations was less than the half of the turn-on voltage obtained from the static simulation. Since the suspended carbon nanotube (CNT) oscillated with the amplitude for the oscillation center under an externally applied force, the quantity of the CNT-gold interaction in the static analysis was different from that in the dynamic analysis. When the gate bias was applied, the oscillation centers obtained from the static analysis were different from those obtained from the dynamics analysis. Therefore, for the range of the potential difference that the CNT-gold interaction effects in the static analysis were negligible, the vibrations of the CNT in the dynamics analysis significantly affected the CNT-gold interaction energy and the turn-on voltage. The turn-on voltage and the tunneling resistance obtained from our tunneling current model were in good agreement with previous experimental and theoretical works.

BioMEMS-EARLY DISEASE DETECTION (BioMEMS 기반의 조기 질병 진단 기술에 관한 연구)

  • Singh, Kanika;Kim, Kyung-Chun
    • Proceedings of the KSME Conference
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    • 2007.05b
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    • pp.2781-2784
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    • 2007
  • Early detection of a disease is important to tackle treatment issues in a better manner. Several diagnostic techniques are in use, these days; for such purpose and tremendous research is going on to develop newer and newer methods. However, more work is required to be done to develop cheap and reliable early detection techniques. Micro-fluidic chips are also playing key role to deliver new devices for better health care. The present study focuses on a review of recent developments in the interrogation of different techniques and present state-of-the-art of microfluidic sensor for better, quick, easy, rapid, early, inexpensive and portable POCT (Point of Care testing device) device for a particular study, in this case, bone disease called osteoporosis. Some simulations of the microchip are also made to enable feasibility of the development of a blood-chip-based system. The proposed device will assist in early detection of diseases in an effective and successful manner.

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Numerical study on the structural response of energy-saving device of ice-class vessel due to impact of ice block

  • Matsui, Sadaoki;Uto, Shotaro;Yamada, Yasuhira;Watanabe, Shinpei
    • International Journal of Naval Architecture and Ocean Engineering
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    • v.10 no.3
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    • pp.367-375
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    • 2018
  • The present paper considers the contact between energy-saving device of ice-class vessel and ice block. The main objective of this study is to clarify the tendency of the ice impact force and the structural response as well as interaction effects of them. The contact analysis is performed by using LS-DYNA finite element code. The main collision scenario is based on Finnish-Swedish ice class rules and a stern duct model is used as an energy-saving device. For the contact force, two modelling approaches are adopted. One is dynamic indentation model of ice block based on the pressure-area curve. The other is numerical material modelling by LS-DYNA. The authors investigated the sensitivity of the structural response against the ice contact pressure, the interaction effect between structure and ice block, and the influence of eccentric collision. The results of these simulations are presented and discussed with respect to structural safety.

The Development of Surge Protection Circuit Applying SCR for Improving Reliability (신뢰도 향상을 위해 SCR을 응용한 서지 보호회로 개발)

  • NamKoong, Up;Chu, Kwang-Uk
    • Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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    • v.26 no.8
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    • pp.96-101
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    • 2012
  • A surge protection device of the metal oxide varistor(MOV) has been commonly used for preventing electrical damage in many electronic equipments. The MOV has a property that leakage current is increased and might be permanently damaged when it is exposed continuously to the electrical stresses such as lightening surges. In this paper, we propose a novel surge protection circuit adopting a silicon controlled rectifier(SCR) in the traditional protection circuits using the MOV device simultaneously. When lightning surges are injected to the proposed circuit, the MOV lets the surge pulses bypassing through the ground at first up to the level that SCR begins to operate. Above the threshold level of turning on the SCR, the SCR operates bypasses large surge currents to the ground. Proposed circuit was verified with a leakage current experiment and PSpice circuit simulations under the repeated surge injection environment.

Module Multilevel-Clamped Composited Multilevel Converter (M-MC2) with Dual T-Type Modules and One Diode Module

  • Luo, Haoze;Dong, Yufei;Li, Wuhua;He, Xiangning
    • Journal of Power Electronics
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    • v.14 no.6
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    • pp.1189-1196
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    • 2014
  • A modular multilevel-clamped composited multilevel converter ($M-MC^2$) is proposed. $M-MC^2$ enables topology reconfiguration, power device reuse, and composited clamping. An advanced five-level converter ($5L-M-MC^2$) is derived from the concept of $M-MC^2$. $5L-M-MC^2$ integrates dual three-level T-type modules and one three-level neutral point clamped module. This converter can also integrate dual three-level T-type modules and one passive diode module by utilizing the device reuse scheme. The operation principle and SPWM modulation are discussed to highlight converter performance. The proposed $M-MC^2$ is comprehensively compared with state-of-the-art five-level converters. Finally, simulations and experimental results are presented to validate the effectiveness of the main contributions of this study.

Analytical Modeling of the IGBT Device for Transient Analysis Simulation (과도 해석 시뮬레이션을 위한 IGBT소자의 논리적인 모델링)

  • Seo, Yong-Soo;Jang, Seong-Chil;Kim, Yong-Chun;Cho, Moon-Taek;Seo, Soo-Ho
    • Proceedings of the KIEE Conference
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    • 1993.11a
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    • pp.148-150
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    • 1993
  • The IGBT(Insulated Gate Bipolar Transistor) is a power semiconductor device that has gained acceptance among power electronic circuit design engineers for motor drive and Power converter applications. The device-circuit interaction of power insulated gate bipolar transistor for a series-inductor load, both with and without a snubber are, simulated. An analytical model for the transient operation of the IGBT is used in conjunction with the load circuit state equations for the simulations.

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A New Asymmetric SOI Device Structure for High Current Drivability and Suppression of Degradation in Source-Drain Breakdown Voltage (전류구동 능력 향상과 항복전압 감소를 줄이기 위한 새로운 비대칭 SOI 소자)

  • 이원석;송영두;정승주;고봉균;곽계달
    • Proceedings of the IEEK Conference
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    • 1999.06a
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    • pp.918-921
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    • 1999
  • The breakdown voltage in fully depleted SOI N-MOSFET’s have been studied over a wide range of film thicknesses, channel doping, and channel lengths. An asynmmetric Source/Drain SOI technology is proposed, which having the advantages of Normal LDD SOI(Silicon-On-Insulator) for breakdown voltage and gives a high drivability of LDD SOI without sacrificings hot carrier immunity The two-dimensional simulations have been used to investigate the breakdown behavior in these device. It is found that the breakdown voltage(BVds) is almost same with high current drivability as that in Normal LDD SOI device structure.

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A Study on Multi-level Converter Based on Distribution Active Hybrid Solid State Transformer (멀티레벨 컨버터 기반 배전용 능동형 하이브리드 반도체 변압기에 대한 연구)

  • Yun, Chun-gi;Cho, Younghoon
    • Proceedings of the KIPE Conference
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    • 2018.07a
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    • pp.84-86
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    • 2018
  • Active hybrid solid state transformer(AHSST) is newly emerging as a device to maintan the power quality of power distribution. AHSST has a simple structure in which a power electronics device is connected in series to a conventional distribution transformer. The connected power electronics device maintains the constant voltage regardless of the primary grid voltage fluctuation through the secondary voltage control to improve the power quality. It also has a simple structure compare to conventional solid state transformer system and can achieve the same performance with fractionally-rated converter. This paper proposes an multi-level converter based on AHSST system that has a simpler control method and wider voltage control range than the conventional AHSST. The proposed system is verified by simulations.

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Trench Shorted Anode LIGBT on 501 Substrates (트랜치 구조를 갖는 단락 애노드 SOI LIGBT)

  • Choe, Seung-Pil;Ha, Min-U;Han, Min-Gu;Choe, Yeon-Ik
    • The Transactions of the Korean Institute of Electrical Engineers C
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    • v.51 no.5
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    • pp.196-198
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    • 2002
  • A trench shorted anode LIGBT (TSA-LIGBT) which decreases the device area and the forward voltage drop has been proposed and verified by 2D device simulations. The trench located in the shorted anode would form the shorted anode. The simulation results show that TSA-LIGBT decrease the device area by about 20% and the forward voltage drop by over 75% compared with the conventional ones. Also the troublesome negative differential resistance (NDR) regime has been eliminated successfully in the TSA-LIGBT.