The Transactions of the Korean Institute of Electrical Engineers C (대한전기학회논문지:전기물성ㆍ응용부문C)

The Korean Institute of Electrical Engineers (대한전기학회)
권호 표지

Trench Shorted Anode LIGBT on 501 Substrates

트랜치 구조를 갖는 단락 애노드 SOI LIGBT

  • Published : 2002.05.01
Download PDF
⟨ Previous Next ⟩

Abstract

A trench shorted anode LIGBT (TSA-LIGBT) which decreases the device area and the forward voltage drop has been proposed and verified by 2D device simulations. The trench located in the shorted anode would form the shorted anode. The simulation results show that TSA-LIGBT decrease the device area by about 20% and the forward voltage drop by over 75% compared with the conventional ones. Also the troublesome negative differential resistance (NDR) regime has been eliminated successfully in the TSA-LIGBT.

Keywords

References

  1. P. A. Gough, M. R. Simpson, and V. Rumenik, 'Fast switching lateral insulated gate transistor', IEDM Tech. Dig, 1986
  2. M. R. Simpson, 'Analysis of negative differential resistance in the I_V characteristics of shorted-anode LIGBT', IEEE Trans. Electron Devices, vol. 38, no. 7, 1991
  3. Garter M. et al, 'Bistability and hysteresis in the characteristics of segmented-anode lateral IGBTs', IEEE Trans. Electron Devices, vol. 45, no. 7, 1998 https://doi.org/10.1109/16.701491
  4. B. H. Lee, J. H. Chun, M. K. Han and Y. I. Choi, 'A new gradual hole injection dual-gate LIGBT', IEEE Electron Device Letter, vol. 19, no. 12, 1998
  5. J. H. Chun, D. S. Byeon, M. K. Han and Y. I. Choi, 'A Fast-Switching SOI SA-LIGBT without NDR region', Proc. of 12th International Symposium On Power Semiconductor devices and ICs, 2000 https://doi.org/10.1109/ISPSD.2000.856793