• Title/Summary/Keyword: device simulations

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Fabrication of Superjunction Trench Gate Power MOSFETs Using BSG-Doped Deep Trench of p-Pillar

  • Kim, Sang Gi;Park, Hoon Soo;Na, Kyoung Il;Yoo, Seong Wook;Won, Jongil;Koo, Jin Gun;Chai, Sang Hoon;Park, Hyung-Moo;Yang, Yil Suk;Lee, Jin Ho
    • ETRI Journal
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    • v.35 no.4
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    • pp.632-637
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    • 2013
  • In this paper, we propose a superjunction trench gate MOSFET (SJ TGMOSFET) fabricated through a simple p-pillar forming process using deep trench and boron silicate glass doping process technology to reduce the process complexity. Throughout the various boron doping experiments, as well as the process simulations, we optimize the process conditions related with the p-pillar depth, lateral boron doping concentration, and diffusion temperature. Compared with a conventional TGMOSFET, the potential of the SJ TGMOSFET is more uniformly distributed and widely spread in the bulk region of the n-drift layer due to the trenched p-pillar. The measured breakdown voltage of the SJ TGMOSFET is at least 28% more than that of a conventional device.

Impact of Gate Structure On Hot-carrier-induced Performance Degradation in SOI low noise Amplifier (SOI LAN에서 게이트구조가 핫캐리어에 의한 성능저하에 미치는 영향)

  • Ohm, Woo-Yong;Lee, Byong-Jin
    • 전자공학회논문지 IE
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    • v.47 no.1
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    • pp.1-5
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    • 2010
  • This paper presents new results of the impact of gate structure on hot-carrier-induced performance degradation in SOI low noise amplifier. Circuit simulations were carried out using the measured S-parameters of H--gate and T-gate SOI MOSFETs and Agilent's Advanced Design System (ADS) to compare the performance of H-gate LNA and T-gate LNA before and after stress. We will discuss the figure of merit for the characterization of low noise amplifier in terms of impedance matching (S11), noise figure, and gain as well as the relation between device degradation and performance degradation of LNA.

Content-based Image Retrieval using Spatial-Color and Gabor Texture on A Mobile Device (모바일 디바이스상에서 공간-칼라와 가버 질감을 이용한 내용-기반 영상 검색)

  • Lee, Yong-Hwan;Lee, June-Hwan;Cho, Han-Jin;Kwon, Oh-Kin;Kim, Youngseop
    • Journal of the Semiconductor & Display Technology
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    • v.13 no.4
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    • pp.91-96
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    • 2014
  • Mobile image retrieval is one of the most exciting and fastest growing research fields in the area of multimedia technology. As the amount of digital contents continues to grow users are experiencing increasing difficulty in finding specific images in their image libraries. This paper proposes a new efficient and effective mobile image retrieval method that applies a weighted combination of color and texture utilizing spatial-color and second order statistics. The system for mobile image searches runs in real-time on an iPhone and can easily be used to find a specific image. To evaluate the performance of the new method, we assessed the iPhone simulations performance in terms of average precision and recall using several image databases and compare the results with those obtained using existing methods. Experimental trials revealed that the proposed descriptor exhibited a significant improvement of over 13% in retrieval effectiveness, compared to the best of the other descriptors.

A Study of a Nonlinear Viscoelastic Model for Elastomeric Bushing in Radial Mode

  • Lee, Seong-Beom;Park, Jong-Keun;Min, Je-Hong
    • International Journal of Precision Engineering and Manufacturing
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    • v.5 no.2
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    • pp.16-21
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    • 2004
  • An elastomeric bushing is a device used in automotive suspension systems to reduce the load transmitted from the wheel to the frame of the vehicle. The relation between the load applied to the shaft or sleeve and the relative displacement of elastomeric bushing is nonlinear and exhibits features of viscoelasticity. A load-displacement relation for elastomeric bushing is important fur dynamic numerical simulations. A boundary value problem fur the bushing response leads to the load-displacement relation, which requires complex calculations. Therefore, by modifying the constitutive equation for a nonlinear viscoelastic incompressible material developed by Lianis, the data for the elastomeric bushing material was obtained and this data was used to derive the new load-displacement relation for radial response of the bushing. After the load relaxation function for the bushing was obtained from the step displacement control test, Pipkin-Rogers model was developed. Solutions were allowed for comparison between the results of the modified Lianis model and those of the proposed model. It was shown that the proposed Pipkin-Rogers model was in very good agreement with the modified Lianis model.

A Study on Pulse Power Suppuy for Microwave Oven Using HVC Embedded High Frequency Transformer (HVC 내장형 고주파변압기를 이용한 Microwave Oven용 펄스전원장치에 관한 연구)

  • Park K.H.;Cho J.S.;Jung B.H.;Mok H.S.;Park H.B.
    • Proceedings of the KIPE Conference
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    • 2001.07a
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    • pp.584-588
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    • 2001
  • A conventional power supply to drive a microwave oven has ferro-resonant transformer and high voltage Capacitor(HVC). Though it is simple, transformer is bulky, heavy and has low-efficiency. To improve this defect a high frequency inverter type power supply has been investigated and developed in recent years. But, because of additional control circuit and switching device, inverter-type power supply is more expensive than conventional one. In this study, A new pulse power supply for Microwave Oven using novel HVC embedded high frequency transformer is proposed for down-sizing, cost reduction, and efficiency emprovement of Inverter type power supply. Also, equivalent circuit model is derived by impedance measurements. And the operation of proposed pulse power supply is verified by simulations and experimental results.

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Design of 1,200 V Class High Efficiency Trench Gate Field Stop IGBT with Nano Trench Gate Structure (1 um 미만의 나노트렌치 게이트 구조를 갖는 1,200 V 고효율 트렌치 게이트 필드스톱 IGBT 설계에 관한 연구)

  • Kang, Ey Goo
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.31 no.4
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    • pp.208-211
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    • 2018
  • This paper details the design of a 1,200 V class trench gate field stop IGBT (insulated gate bipolar transistor) with a nano gate structure smaller than 1 um. Decreasing the size is important for lowering the cost and increasing the efficiency of power devices because they are high-voltage switching devices, unlike memory devices. Therefore, in this paper, we used a 2-D device and process simulations to maintain a gate width of less than 1 um, and carried out experiments to determine design and process parameters to optimize the core electrical characteristics, such as breakdown voltage and on-state voltage drop. As a result of these experiments, we obtained a wafer resistivity of $45{\Omega}{\cdot}cm$, a drift layer depth of more than 180 um, an N+ buffer resistivity of 0.08, and an N+ buffer thickness of 0.5 um, which are important for maintaining 1,200 V class IGBTs. Specially, it is more important to optimize the resistivity of the wafer than the depth of the drift layer to maintain a high breakdown voltage for these devices.

Electrical Characteristics of 1,200 V Reverse Conducting-IGBT (1,200 V Reverse Conducting IGBT의 전기적 특성 분석)

  • Kim, Se Young;Ahn, Byoungsub;Kang, Ey Goo
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.33 no.3
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    • pp.177-180
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    • 2020
  • This paper focuses on the 1,200-V level reverse conducting-insulated gate bipolar transistor (RC-IGBT). The structure of the RC-IGBT has an n+ collector at the collector terminal. The breakdown voltage, Vth, Vce-sat, and turn-off time, and the electrical characteristics of a field-stop IGBT (FS-IGBT) and RC-IGBT are compared and analyzed using simulations. Based on the results, the RC-IGBT obtained a turn-off time of 320.6 ㎲ and a breakdown voltage of 1,720 V, while the FS-IGBT obtained a turn-off time of 742.2 ㎲ and a breakdown voltage of 1,440 V. Therefore, RC-IGBTs have faster on/off transitions and a higher breakdown voltage, which can reduce the size of the element.

Development of an Application for Mobile Devices to Analyze Data Set by a Self-Organizing Map : A Case Study on Saga Prefectural Sightseeing Information

  • Wakuya, Hiroshi;Horinouchi, Yu;Itoh, Hideaki
    • International Journal of Contents
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    • v.9 no.3
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    • pp.15-18
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    • 2013
  • In the preceding studies, an analysis of Saga Prefectural sightseeing information by a Self-Organizing Map (SOM) has been tried. And recent development on Information and Communication Technology (ICT) will help us to access any results via the mobile devices easily. This is why the mobile devices, e.g., smartphones and tablet computers, have an operating system installed, and we can improve their functions by downloading any applications on the Web. Then, in order to realize this basic idea, development of an application for the mobile devices is investigated through some computer simulations on the standard desktop PC in this paper. As a result, it is found that i) a developed feature map is useful to identify some candidate topics, ii) a touchscreen is suitable to show the feature map, and iii) arrangement of the feature map can be modified based on our interests. Then, it is concluded that the proposed idea seems to be applicable, even though further consideration is required to brush it up.

A Study on the Characteristics of High Pressure Regulator for Vehicle CNG (자동차 CNG용 고압 레귤레이터의 특성해석에 관한 연구)

  • Kim, Byeong-Woo
    • Journal of the Korea Academia-Industrial cooperation Society
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    • v.12 no.12
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    • pp.5997-6003
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    • 2011
  • To increase the driving distance of a natural gas vehicle, the high pressure of fuel charge is necessary and the development of the device reducing the pressure to suitable pressure for fuel of high pressure. In this study, Pressure characteristics at the pressure regulator, which is very important for gas supply systems for vehicles, are investigated. Numerical simulations are carried out to quantify pressures at regulators for several flow rates and to investigate pressure drop, hysteresis losses at some parts in the pressure regulator. Moreover, this paper presents a new kind of hydraulic simulation which is composed of CNG regulator. Lastly, experiments are carried out to verify the effectiveness of the prosed mathematical simulation with various regulator components as in real working condition.

A Novel Energy Recovery Circuit for AC PDPs with Reduced Sustain Voltage (새로운 유지구동전압 저감형 AC PDP용 에너지 회수회로)

  • Lim, Seung-Bum;Hong, Soon-Chan
    • The Transactions of the Korean Institute of Power Electronics
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    • v.11 no.6
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    • pp.494-501
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    • 2006
  • In this paper, a novel energy recovery circuit for AC PDPs(Plasma Display Panels) with reduced sustain voltage is proposed to improve the performance of conventional circuits such as TERES(TEchnology of REciprocal Sustainer). In the TERES circuit, the sustain voltage is the half of general sustaining driver for AC PDPs, however, there is no energy recovery circuit. In the proposed circuit, the efficiency is heightened by installing in energy recovery circuit and the loss of switching device is reduced by performing the zero voltage switching or zero current switching. Although the energy recovery circuit is added, the number of active switching elements of the proposed circuit is the same as that of the TERES circuit. The operations of the proposed circuit are analyzed for each mode and its validity is verified by the simulations and experimentation.