• Proceedings of the KIEE Conference
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• 2009.07a
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• pp.258_259
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• 2009

This paper describes the development of robust processor for analyzing network state in Korean Energy Management System. The important function of topology processing is to convert the switching/device model into a bus/branch model by the status of switching devices. The state estimator also provides a consistent unified solution, not only for measurement of the observable system, but also for the unobservable system. The primary function of the online power flow is to provide a highly reliable and flexible power flow solution that can be used to solve a wide variety of power systems problems. The validity of the newly developed functions has been verified through comparative simulations with the existing EMS functions, which are currently in use in the Korean power system.

• Journal of the Korean Society for Precision Engineering
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• v.19 no.8
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• pp.203-211
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• 2002

ABS (Anti-lock Braking System) is a safety device for preventing wheel locking in a sudden braking. It consists of hydraulic modulator, ECU(Electronic Control Unit) and angular velocity sensors. Its control methods are classified into three types; deceleration control, slip ratio control and deceleration/acceleration control. In this paper, ABS mounted vehicle is mathematically modeled and the proposed model is verified by actual cars experiments, and the braking characteristics of the control methods with pulse width modulation are compared and analyzed through computer simulations.

• The Transactions of the Korean Institute of Electrical Engineers D
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• v.50 no.12
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• pp.584-589
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• 2001

This paper presents an implementation method of multi-channel synchronized phasor measurement device, which is based on the ASIC implementation of the sliding-DFT. A time-shared multiplier structure is proposed to minimize the number of gates required for the implementation. The design is verified by the timing simulation of its operation. The effect of coefficient approximation in the recursive implementation of the sliding-DFT is analytically derived and verified with the computer simulations.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1997.04a
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• pp.168-171
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• 1997

TFT2DS was developed to provide the usefulness as an analytic and design tool. The static characteristics of a-Si:H TFTs demonstrated a good agreement between simulated and measured data. This paper shows that TFT2DS can optimize the physical parameters of a-Si:H through sensitivity simulations and compute the static characteristics of a-Si:H TFTs. Moreover, through the sensitivity study of the parameters, it is shown that the optimizations of both the physical parameters of a-Si:H and the parameters of a-Si:H deposition, which must be inter-related, might be possibl.

• Proceedings of the KIEE Conference
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• 2001.07b
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• pp.798-800
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• 2001

Precision control technologies are required for photolithography. The linear BLDC motor is used for the stage operations. The stage that is installed in a photolithography device is basically controlled in three directions(x, y, z axes). This paper presents precision control technologies of the linear BLDC motor in one direction by computer simulations. A position control system with linear BLDC motor is now being tested.

• Journal of the Semiconductor & Display Technology
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• v.4 no.1 s.10
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• pp.49-53
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• 2005

The nanoparticle deposition chamber, which is used for quantum dot semiconductor memory applications, is designed by means of numerical simulation. In this research, the numerical simulations for deposition chamber were performed by commercial software, FLUENT. The deposition of nanoparticles is calculated by diffusion force, thermophoresis and electrophoresis of particles. As a results, when the diffusion force was considered, the most of particles deposited in the wall of deposition chamber. But as considering thermophoresis and electrophoresis of particles, the particles were deposited wafer surface, perfectly.

• Journal of the Optical Society of Korea
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• v.20 no.2
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• pp.321-324
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• 2016

Transformation optics methodology provides a new pathway for designing novel devices. It is based on changing a material’s permittivity and permeability. A design for changing the appearance of an object by transformation optics methodology is proposed here. Through a certain transformation, the relations of the metric spaces and the calculation of the material parameters are derived, and the aim of changing the apparent size of an object can be realized. Full wave simulations are performed to validate the proposed device’s performance. It is possible to think that the methodology will improve the flexibility of designing interesting applications in microwave and optical regimes.

• 한국정보디스플레이학회:학술대회논문집
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• 2003.07a
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• pp.543-546
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• 2003

We studied the dielectric layer effect on the electro-optical (EO) properties of liquid crystal (LC) devices together with numerical simulations. Recently, it has been reported that the surface dielectric layer affects significantly the EO performances of LC microlens arrays and wide-viewing LC displays. it is found that the operation voltage of the LC device decreases with increasing the dielectric constant or with decreasing the thickness of the dielectric polymer layer. The experimental data agree well with theoretical results predicted in a simple dielectric model within the continuum formalism.

• Transactions on Electrical and Electronic Materials
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• v.5 no.4
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• pp.129-132
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• 2004

The electrothermal characteristics of a high voltage LIGBT(Lateral Insulated Gate Bipolar Transistor) using thin silicon on insulator (SOI) and silicon on sapphire (SOS) such as thermal conductivity and sink is analyzed by MEDICI. The device simulations demonstrate that the thermal conductivity of the buried oxide is an important parameter for modeling of the thermal behavior of SOI devices. In this paper we simulated the thermal conductivity and temperature distribution of a SOI LIGBT with an insulator layer of SiO$_2$ and $Al_2$O$_3$ at before and after latch-up and verified that the SOI LIGBT with the $Al_2$O$_3$ insulator had good thermal conductivity and reliability.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.23 no.3
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• pp.183-189
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• 2010

In this paper, the trench gate emitter switched thyristor(EST) withl trench gate electrode is proposed for improving snap-back effect which leads to a lot of problems in device applications. The parasitic thyristor which is inherent in the conventional EST is completely eliminated in this structure, allowing higher maximum controllable current densities for ESTs. The dual trench gate allows homogenous current distribution in the EST and preserves the unique feature of the gate controlled current saturation of the thyristor current. The characteristics of the 1700 V forward blocking EST obtained from two-dimensional numerical simulations (MEDICI) is described and compared with that of a conventional EST. we carried out layout, design and process of EST devices.