• JSTS:Journal of Semiconductor Technology and Science
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• v.17 no.3
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• pp.347-353
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• 2017

We present a STT-MRAM read-circuit which mitigates the performance degradation caused by offsets from device mismatches. In the circuit, a single current source supplies read-current to both the data and the reference cells sequentially eliminating potential mismatches. Furthermore, an offset-free pre-amplification using a capacitor storing the mismatch information is employed to lessen the effect of the comparator offset. The proposed circuit was implemented using a 130-nm CMOS technology and Monte Carlo simulations of the circuit demonstrate its effectiveness in suppressing the effect of device mismatch.

• Proceedings of the Optical Society of Korea Conference
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• 2003.02a
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• pp.224-225
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• 2003

Since group velocity (GV) mismatch significantly limits the efficiency of nonlinear interactions such as second harmonic generation (SHG), several techniques have been developed to compensate GV mismatch. The simplest way to avoid the GV mismatch problem is to reduce the device length. However, it results in a poor trade-off between the SHG spectral bandwidth and the conversion efficiency. (omitted)

• Journal of the Semiconductor & Display Technology
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• v.1 no.1
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• pp.1-7
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• 2002

Modem technology depends on the reliability of extremely high precision equipments. In the production of semiconductor wafer, optical and electron microscopes, ion-beam, laser device must maintain their alignments within a sub-micrometer. This equipment requires a vibration free environment to provide its proper function. Therefore, this high technology equipments require very strict environmental vibration criteria because it is used as basic data for the design of building structure and structural dynamics of equipment. In this paper, the new approach is proposed to investigate the mismatch problem of time and frequency domain for vibration criteria of sensitive equipment. The proposed approach is based on a vibration measurement data and a relative transfer function which can be obtained by experiment or analysis.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.45 no.5
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• pp.26-32
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• 2008

The performance of an analog winner-take-all(WTA) circuit is affected by the corner error and the offset error. Despite the fact that the corner error can be reduced with large transconductance of the transistor, the offset error caused by device mismatch has not been completely studied. This paper presents the complete offset error analysis, and proposes low offset design guidelines and an offset cancellation scheme. The experimental results show good agreement with the theoretical analysis and the drastic improvement of the offset error.

• Journal of information and communication convergence engineering
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• v.11 no.4
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• pp.288-292
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• 2013

In this paper, a carbon implant is investigated in detail from the perspectives of performance advantages and side effects for the thick n-type metal-oxide-semiconductor field-effect transistor (n-MOSFET). Threshold voltage ($V_{th}$) adjustment using a carbon implant significantly improves the $V_{th}$ mismatch performance in a thick (3.3-V) n-MOS transistor. It has been reported that a bad mismatch occurs particularly in the case of 0.11-${\mu}m$ $V_{th}$ node technology. This paper investigates a carbon implant process as a promising candidate for the optimal $V_{th}$ roll-off curve. The carbon implant makes the $V_{th}$ roll-off curve perfectly flat, which is explained in detail. Further, the mechanism of hot carrier injection lifetime degradation by the carbon implant is investigated, and new process integration involving the addition of a nitrogen implant in the lightly doped drain process is offered as its solution. This paper presents the critical side effects, such as Isub increases and device performance shifts caused by the carbon implant and suggests an efficient method to avoid these issues.

• Korean Journal of Materials Research
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• v.9 no.6
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• pp.599-603
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• 1999

We have investigated the growth characteristics of thick GaN on Sim substrate with AlN and low temperature GaN buffer layer. The vertical hydride vapor phase epitaxy system with $GaCl_3$ precursor was used for growth of GaN. AlN and GaN buffer layer were deposited on Si substrate to reduce the lattice mismatch and the thermal expansion coefficient mismatch between si and GaN. Optimization of deposition condition for AlN and low temperature GaN buffer layers were carried out. We studied the effects of growth temperature, V/III ratio on the properties of thick GaN. Surface morphology, growth rate and crystallinity of thick GaN were measured using Atomic Force Microscopy (AFM), $\alpha-step$-, Scanning Electron Microscopy (SEM) and X-Ray Diffractometer(XRD).

• Journal of Mechanical Science and Technology
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• v.16 no.12
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• pp.1664-1672
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• 2002

Gantry mechanisms have been widely used for precision manufacturing and material handling in electronics, nuclear, and automotive industries. Dual-drive servo mechanism is a way to increase control bandwidth, in which two primary axes aligned in parallel are synchronously driven by identical servo motors. With this mechanism, a flexible coupling (compliance mechanism) is often introduced in order to avoid the damage by the servo mismatch between the primary drives located at each side of gantry. This paper describes the design guidelines of the dual-drive servo mechanism with focus on its dynamic characteristics and control ramifications. That is, the effect on the system bandwidth which is critical on the system performance, the errors and torques exerted on guide ways in case of servo mismatch, the vibration characteristics concerned with dynamic error and settling time, and the driving force required at each axis for control are thoroughly investigated.

• Journal of the Korean Vacuum Society
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• v.4 no.S2
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• pp.30-33
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• 1995

By using X-ray double crystal diffraction technique the multilayer structure composed of glass membrane, platinum film and $\alpha Al_2O_3$ substrate has been studied. It is found the stress is produced in the film by thermal mismatch within multilayer materials. The measuring results of thin film platinum resistors show that the stress were induce resistance change of device and different stress status will produce add resistance in different direction. Selecting proper glass material can make opposite stress in Pt film and opposite add resistance due to thermal mismatch. The reliability of Pt resistor has been improved with method of this stress compensation.

• 제어로봇시스템학회:학술대회논문집
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• 2002.10a
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• pp.85.5-85
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• 2002

The Master-Slave manipulator is generally used as a remote handling device in the hot cell, in which the high level radio-active materials such as spent fuels are handled. This study describes a workspace mapping algorithm for a kinematically dissimilar master-slave system The algorithm provides the operator to guide the slave's end effector into unreachable regions which can appear due to the mismatch of workspace between the master and slave manipulator. A spaceball was used for the universal master device, and it can detect the slight fingertip force applied on the ball and also resolve the applied force. The spaceball device was also used to move 3D images instantaneously and simultaneou...

• Transactions on Electrical and Electronic Materials
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• v.3 no.4
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• pp.32-35
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• 2002

In this work, we test electrode material of TFD (Thin Film Diode) device subject to flexible substrate. Al, that is ductile metal, was proper for flexible electrode to fabricate flexible display. The fabricated devices had symmetric electrode structure on both sides of insulation layer. The electrode was made of ductile Al so as to reduce the mismatch of properties between the electrode and substrate. The TFD device was successfully fabricated applying our own etch-free process. Electrical properties were improved by post-annealing.