• Title/Summary/Keyword: device fabrication

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Microelectromechnical system 소자 제작을 위한 유기금속분해법에 의한 압전성 PZT(53/47)박막의 증착 (Deposition of Piezoelectric PZT(53/47) Film by Metalorganic Decomposition for Micro electro mechanical Device)

  • 윤영수;정형진;신영화
    • 한국전기전자재료학회논문지
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    • 제11권6호
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    • pp.458-464
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    • 1998
  • This paper gives characterization of substrate and PZT(53/47) thin film deposited by metalorganic decomposition, which is concerned in deposition process and device fabrication process, to fabricate micro electro mechanical system (MEMS) device with piezoelectric material. The PZT thin films deposited by MOD at 700^{\circ}C$ for 30 minutes had a polycrystallinity, that is, no substrate dependence, while different interface were developed depending on the bottom electrodes. Such a structural variation could influence on not only the properties of the PZT film but also etching process for fabricating MEMS devices. Therefore the electrode structure is a very important factor in the deposition of the PZT film during etching process by HF acid for MEMS device with piezoelectric material. Piezoelectric coefficients of the PZT films on the different substrates were 40 and 80 pm/V at an applied voltage of 4V. Based in these results, it was possible for deposition of the PZT film by MOD to apply MEMS device fabrication process based on piezoelectricity after selection of proper bottom electrode.

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수성 고분자 - 탄소나노튜브 복합 분산 용액을 이용한 전계 방출 소자의 제작

  • 정혁;김도진
    • 한국재료학회:학술대회논문집
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    • 한국재료학회 2011년도 춘계학술발표대회
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    • pp.66.2-66.2
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    • 2011
  • A polymer-based multi-walled carbon nanotube (MWCNT) field emission device was fabricated from a composite dispersion of MWCNTs and waterborne polymethyl methacrylate (PMMA). The waterborne PMMA synthesized through the emulsion polymerization method was added to minimize the reagglomeration of dispersed MWCNTs with surfactants in water, and increase the adhesion between the and the substrate. The field emission properties of the fabricated device were optimized by adjusting the density of the emitter and the adhesion between the MWCNTs and the substrate. These were done by controlling the polymer concentration added to the MWCNT dispersion, as well as the amount of spray coating on the substrate. The results confirm the successful fabrication of a polymer-based MWCNT field emission device with a low field of 1.07 $V/{\mu}m$ and a good electric field enhancement factor of 2445. The device was fabricated by adding 0.8 mg/mL of polymer solution to the MWCNT dispersion and applying 20 cycles of spray coating. Application of this same MWCNT/polymer composite solution to a flexible polymer substrate also resulted in the successful fabrication of an electric field emission device with uniform emission and long time stability.

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Laser Scanning Path Generation for the Fabrication of Large Size Shape

  • Choi, Kyung-Hyun;Choi, Jae-Won;Doh, Yang-Hoe;Kim, Dong-Soo
    • 제어로봇시스템학회:학술대회논문집
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    • 제어로봇시스템학회 2005년도 ICCAS
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    • pp.2175-2178
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    • 2005
  • Selective Laser Sintering(SLS) method is one of Rapid Prototyping(RP) technologies. It has been used to fabricate desirable part to sinter powder and stack the fabricated layer. Since the sintering process occurs using infrared laser having high thermal energy, shrinkage and curling of the fabricated part occurs according to thermal distribution. Therefore, the fast scanning path generation is necessary to eliminate the factors of quality deterioration. In case of fabricating larger size parts, the unique scanning device and scanning path generation should be considered. In this paper, the development of SLS machines being capable of large size fabrication(800${\times}$1000${\times}$800 mm, W${\times}$D${\times}$H) will be addressed. The dual laser system and the unique scanning device have been designed and built, which employ CO2 lasers and dynamic 3-axis scanners. The developed system allows scanning a larger planar surface with the desired laser spot size. Also, to generate the fast scanning paths, adaptive path generation is needed with respect to the shape of each layer, and not simply x, y scanning, but the scanning of arbitrary direction should be enabled. To evaluate the suggested method, the complex part will be used for the experiment fabrication.

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도파폭 공정오차에 따른 광도파 특성변화와 소자성능 저하 (AWG device characteristic dependence on the fabrication error limit)

  • 박순룡;오범환
    • 한국광학회지
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    • 제10권4호
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    • pp.342-347
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    • 1999
  • 광소자의 소형화와 집적화 노력에 따라 광도파로의 도파폭과 곡률 반경이 작아지면서, 그 경계조건을 만족하는 도파모드와 전파상수의 변화가 심하게 되었다. 특히, 도파폭의 좁아지면서 제작 공정상의 폭조절 오차한계 내의 작은 변화에도 전파상수가 크게 변화하게 되어, 배열도파로(Arrayed Waveguide Grating, AWG)소자에서는 각 도파로 진행광의 위상이 설계와 심하게 달라지고 소자의 성능에 영향이 커지게 되었다. 광소자의 소형화에 따라 심각해지는 이러한 근사설계 오차에 의한 영향을 정량적으로 분석하고 대처하기 위해, 여기서는 유효굴절률법(Effective Index Method)과 해석적 함수해(Analytic Solution Method)를 이요하여 여러 도파로 구조를 해석하여 전파특성 변수를 얻어내었다. 또한, 이를 적용하여 자체 제작한 고기능 전산시늉기를 통해 각종 InP-, Silica-AWG 소자의 성능을 모사하였다. 모사 결과는 실제 제작된 전형적인 소자와 비교하여 매우 유사한 경향을 나타내었으며, Ridge-type Inp-AWG 소자의 경우, 도파폭의 허용공차가 0.02$\mu\textrm{m}$ 이내로 개선될 때, AWG 소자의 신호대잡음비(SNR)가 약 -25dB 이상 가능하게 되며 Rib-type Silica-AWG 소자의 경우는 도파폭 허용공차가 0.1$\mu\textrm{m}$ 정도이기만 해도 약 -30dB 이상 가능한 것으로 모사되었다.

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Demonstration of Alternative Fabrication Techniques for Robust MEMS Device

  • Chang, Sung-Pil;Park, Je-Young;Cha, Doo-Yeol;Lee, Heung-Shik
    • Transactions on Electrical and Electronic Materials
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    • 제7권4호
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    • pp.184-188
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    • 2006
  • This work describes efforts in the fabrication and testing of robust microelectromechanical systems (MEMS). Robustness is typically achieved by investigating non-silicon substrates and materials for MEMS fabrication. Some of the traditional MEMS fabrication techniques are applicable to robust MEMS, while other techniques are drawn from other technology areas, such as electronic packaging. The fabrication technologies appropriate for robust MEMS are illustrated through laminated polymer membrane based pressure sensor arrays. Each array uses a stainless steel substrate, a laminated polymer film as a suspended movable plate, and a fixed, surface micromachined back electrode of electroplated nickel. Over an applied pressure range from 0 to 34 kPa, the net capacitance change was approximately 0.14 pF. An important attribute of this design is that only the steel substrate and the pressure sensor inlet is exposed to the flow; i.e., the sensor is self-packaged.