• 한국생산제조학회지
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• 제23권3호
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• pp.218-222
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• 2014

A 3D printer was used to fabricate a micro-TAS system for biomedical applications. A polymeric medical device fabrication based on a 3D printer can be performed at atmospheric conditions. A CAD- and CAM-based system is a flexible method to design medical components, and a 3D printer is a suitable device to perform this task. In this research, a 100-micron-wide fluidic channel was fabricated with a high-aspect ratio. A cross-sectional SEM image confirmed its possible usage in a micro-reactor using 3D printers. CNC-machined samples were compared to 3D printer-fabricated samples, and the advantages and disadvantages were discussed. Based on the SEM images, the surface roughness of the 3D printed reactor was not affected by wet or dry conditions due to its manufacturing principle. An aspect ratio of 5 to 1 was achievable with 100-${\mu}$ m-wide fluid channels. No melting was found, and the shape of channels was straight enough to be used for micro reactors.

• 한국재료학회지
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• 제25권9호
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• pp.487-491
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• 2015

In photovoltaic power generation where minority carrier generation via light absorption is competing against minority carrier recombination, the substrate thickness and material quality are interdependent, and appropriate combination of the two variables is important in obtaining the maximum output power generation. Medici, a two-dimensional semiconductor device simulation tool, is used to investigate the interdependency in relation to the maximum power output in front-lit Si solar cells. Qualitatively, the results indicate that a high quality substrate must be thick and that a low quality substrate must be thin in order to achieve the maximum power generation in the respective materials. The dividing point is $70{\mu}m/5{\times}10^{-6}sec$. That is, for materials with a minority carrier recombination lifetime longer than $5{\times}10^{-6}sec$, the substrate must be thicker than $70{\mu}m$, while for materials with a lifetime shorter than $5{\times}10^{-6}sec$, the substrate must be thinner than $70{\mu}m$. In substrate fabrication, the thinner the wafer, the lower the cost of material, but the higher the cost of wafer fabrication. Thus, the optimum thickness/lifetime combinations are defined in this study along with the substrate cost considerations as part of the factors to be considered in material selection.

• 대한기계학회:학술대회논문집
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• 대한기계학회 2007년도 춘계학술대회A
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• pp.1617-1620
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• 2007

This paper presents a magnetostrictive transpositioner and its fabrication process. To get a transposition movement without shifting or twisting, it is designed as an array type. To fabricate the suggested design, micromachining and selective DC magnetron sputtering processes are combined. TbDyFe film is sputter-deposited on the back side of the bulk micromachined transpositioner, with the condition as: Ar gas pressure below $1.2{\times}10^{-9}$ torr, DC input power of 180W and heating temperature of up to $250^{\circ}C$ for the wireless control of each array component. After the sputter process, magnetization and magnetostriction of each sample are measured. X-ray diffraction studies are also carried out to determine the film structure and thickness of the sputtered film. For the operation, each component of the actuator has same length and out-of-plane motion. Each component is actuated by externally applied magnetic fields up to 0.5T and motion of the device made upward movement. As a result, deflections of the device due to the movement for the external magnetic fields are observed.

• 한국초전도학회:학술대회논문집
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• 한국초전도학회 1999년도 High Temperature Superconductivity Vol.IX
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• pp.242-246
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• 1999

For the fabrication of fault current limiting device using HTSC thick film, YBa$_2Cu_3O_x$ superconducting thick film was formed by surface diffusion process of the Y$_2BaCUO_5$ and the mixed compound of (3BaCuO$_2$+2CuO) expected to be liquid phase above the peritectic temperature of YBa$_2Cu_3O_x$. For the surface diffusion, the compounds of 3BaCuO$_2$+2CuO mixed with binder material was patterned on Y$_2BaCUO_5$ substrate by the screen printing method. After proper sintering, the characteristics of current limit on thick film fabricated was measured. The thick film was able to limit the current from 2.8213 mA$_{rms}$nu to 4.2034 mA$_{rms}$ with 500${\omega}$ load resistance, and from 4.1831 mA$_{rms}$ to 4.2150 mA$_{rms}$ with 10${\omega}$ load resistance.

• 한국광학회지
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• 제10권5호
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• pp.419-423
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• 1999

측면 연마된 단일모드 광섬유와 다중모드 폴리머 평면도파로 사이의 소산장 결합을 이용한 광필터를 제작하고 그 특성을 측정하였다. 소자의 편광의존성을 줄일 수 있는 방법 제안하였으며 실험으로 검증하였다. 그리고 광필터의 공진파장과 여과 깊이는 평면도파로의 두께와 연마깊이로서 적절히 선택할 수 있음을 실험으로 보였다. 광섬유 연마과정, 폴리머 평면도파로 제작 등을 포함한 소자제작 공정을 소개하였다. 제작된 광필터의 3㏈대역폭은 15nm, 삽입손실은 0.2㏈, 편광에 따른 공진 파장의 차이는 2nm 이하였다. 그리고 주위온도에 의한 공진파장의 이동거리는 -0.35nm/$^{\circ}C$로 측정되었다.

• 전자공학회논문지A
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• 제29A권4호
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• pp.38-48
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• 1992

OEIC(Optoelectronic Integrated Circuit)'s can be integrated horizontally or vertically. Horizontal integration approach is, however, more immune to parasitic and more universally applicable. In this paper, a structural modeling, fabrication and characterization of PIN photodiodes which can be used in the horizontal integration are performed. For device modeling, we build a transmission line model from 2-D device simulation, from which lumped model parameters are extracted. The speed limits of the PIN photodiodes can also be calculated under various structural conditions from the model. Thus optimum design of horizontally integrated PIN photodiodes for high speed operation are possible. Such InGaAs/InP PIN photodiodes for long-wavelength communications are fabricated using pit etch, epi growth, planarization, diffusion and metallization processes. Planarization process using both RIE and wet etching and diffusion process using evaporated Zn$_{3}P_{2}$ film are developed. Characterization of the fabricated devices is performed through C-V and I-V measurements. At a reserve bias of 10V, the dark current is less than 5nA and capacitance is about 0.4pF. The calculated bandwidth using the measured series resistance and capacitance is about 4.23GHz.

• 전자공학회논문지A
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• 제31A권9호
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• pp.104-113
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• 1994

We have fabricated n-p-n HBTs using 3-inchAlgaAs/GaAs hetero structure epi-wafers grown by MBE. DC and AC characteristics of HBT devices were measured and analyzed. For HBT epi-structure, Al composition of emitter was graded in the region between emitter cap and emitter. And base layer was designed with concentration of 1${\times}10^{19}/cm^{3}$ and thickness of 50nm, and Be was used as the p-type dopant. Principal processes for device fabrication consist of photolithography using i-line stepper, wet mesa etching, and lift-off of each ohmic metal. The PECVD SiN film was used as the inslator for the metal interconnection. HBT device with emitter size of 3${\times}10{\mu}m^{2}$ resulted in cut-off frequency of 35GHz, maximum oscillation frequency of 21GHz, and current gain of 60. The distribution of the ideality factor of collector and base current was very uniform, and the average values of off-set voltage and current was very uniform, and the average values of off-set voltage and current gain were 0.32V and 32 within a 3-inch wafer.

• Korean Chemical Engineering Research
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• 제59권1호
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• pp.100-105
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• 2021

본 연구는 적은 비용으로 분석 장치 없이 질병 진단 및 경과를 모니터링할 수 있는 종이-기반 분석 장치(paper-based analytical device, PAD)를 제작하기 위해 polydimethylsiloxane (PDMS) 블레이드 코팅 방법을 제안하였다. PAD 디자인은 레이저 커팅 기술로 쉽게 몰드에 적용할 수 있으며, 제작된 몰드로 블레이드 코팅을 수행하여 완전한 소수성 장벽 형성에 필요한 조건을 확립하였다. 코팅 조건인 잉크의 두께와 종이와의 접촉시간에 따라 PDMS 소수성 장벽의 구조와 친수성 채널의 크기 변화를 분석하여 안정적으로 소수성 장벽을 형성할 수 있는 조건을 최적화하였다. 최적화된 방법을 바탕으로 PAD를 제작하여 특별한 분석기기 없이 단백질, 당, 메탈이온을 검출하여 바이오센서에 응용가능함을 증명하였다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 춘계학술대회 논문집
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• pp.74-75
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• 2009

White light emitting device based on a red fluorescence material (5,6,11,12)-Tetraphenylnaphthacene(Rubrene) has been fabricated. The white OLED consists of it and a blue phosphorescent material FIrPic (iridum-bis(4,6,-difluorophenylpyridinato-N,C2)-picolinate) The threshold voltage is 5.3V, and the brightness reaches $1000\;cd/m^2$ at 11V, $14.5\;mA/cm^2$. The color of the light corresponds to a CIE coordinate of (0.30, 0.38). The highest efficiency of the device can reach 9.5 cd/A or 5.5 1m/W at 6V, $0.1mA/cm^2$.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2003년도 춘계학술발표강연 및 논문개요집
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• pp.43-43
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• 2003

Carbon nanotubes(CNTs) have many application points, which are field emission devices, composites, hydrogen storage, nanodevices, supercapacitor and secondary battery. The most promising application point is emitter tip mays of field emission devices. Furthermore, it may be also useful as a vacuum device for high frequency and high power. But, there are some obstacles to fabricate carbon nanotube field emission device. One is that CNTs grown by CVD method has weak adhesion with substrate and the other is non-uniform length of them. These problems are very crucial in aging property and reliability of device in the field emission.