• 한국초전도학회:학술대회논문집
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• v.16
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• pp.81-81
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• 2006

• Journal of the Korean Vacuum Society
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• v.6 no.S1
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• pp.166-171
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• 1997

IBED is a very promosing thin film deposition method because of its many advantages, such as excellent adhesion property of films to substrates, room temperature processing, ease of control over the composition and thickness of films, and so on, over the conventional techniques, It has been widely applied in the field of surface modification of materials in the last decade. In our laboratory, many kinds of thin films, such as wear-resistant hard coatings, corrosion and oxidation protective coatings, biomaterial films, buffer layer for high temperature superconductor films, and oxygen sensitive film, have been synthesized by IBED, and several industrial applications of the IBED films have been conducted.

• Proceedings of the Materials Research Society of Korea Conference
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• 2003.11a
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• pp.57-57
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• 2003

High dielectric constant materials (high K) have attracted a great deal of interest because of the dramatic scaling down of DRAM capacitor reaching its physical limit in terms of reduction of thickness. Among high-K materials that can replace silicon dioxide, tantalum pentoxide (Ta2O5) thin film, with their high dielectric constant (∼25) and good step coverage, is the candidate of choice.

• Proceedings of the Optical Society of Korea Conference
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• 2008.02a
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• pp.283-284
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• 2008

In this paper, we report a broadband circular polarization reflectors and color separators realized as cascades of helical films with different pitch thickness. These helical films were prepared by glancing angle deposition technique.

• Journal of the Korean institute of surface engineering
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• v.48 no.2
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• pp.38-42
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• 2015

Atomic layer deposition (ALD) is essential for the fabrication of nanoscale electronic devices because it has excellent conformality, atomic scale thickness control, and large area uniformity. Metal thin films are one of the important material components for electronic devices as a conductor. As the size of electronic devices shrinks, the thickness of metal thin films is decreased down to few nanometers, and the metal films become non-continuous due to inherent island growth of metal below a critical thickness. So, fabrication of continuous metal thin films by ALD is fundamentally and practically important. Since ALD films are grown through self-saturated reactions between precursors on surface, initial growth characteristics significantly depend on the surface properties and the selection of precursors. In this work, we investigated ALD Pt on $TiO_2$ substrate by using trimethyl-methyl-cyclopentadienyl-Platinum ($MeCpPtMe_3$) precursor and $O_3$ reactant. By using $O_3$ instead of $O_2$, initial nucleation rate of ALD Pt was increased on $TiO_2$ surface, resulting in formation of continuous thin Pt films. Morphologies of ALD Pt on $TiO_2$ were characterized by using Scanning Electron Microscope (SEM) and Energy-Dispersive X-ray Spectroscopy (EDS). Crystallinity of ALD Pt on $TiO_2$ correlated with its growth characteristics was analyzed by X-Ray Diffraction (XRD).

• Korean Journal of Materials Research
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• v.22 no.3
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• pp.130-135
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• 2012

We present a method of graphene synthesis with high thickness uniformity using the thermal chemical vapor deposition (TCVD) technique; we demonstrate its application to a grid supporting membrane using transmission electron microscope (TEM) observation, particularly for nanomaterials that have smaller dimensions than the pitch of commercial grid mesh. Graphene was synthesized on electron-beam-evaporated Ni catalytic thin films. Methane and hydrogen gases were used as carbon feedstock and dilution gas, respectively. The effects of synthesis temperature and flow rate of feedstock on graphene structures have been investigated. The most effective condition for large area growth synthesis and high thickness uniformity was found to be $1000^{\circ}C$ and 5 sccm of methane. Among the various applications of the synthesized graphenes, their use as a supporting membrane of a TEM grid has been demonstrated; such a grid is useful for high resolution TEM imaging of nanoscale materials because it preserves the same focal plane over the whole grid mesh. After the graphene synthesis, we were able successfully to transfer the graphenes from the Ni substrates to the TEM grid without a polymeric mediator, so that we were able to preserve the clean surface of the as-synthesized graphene. Then, a drop of carbon nanotube (CNT) suspension was deposited onto the graphene-covered TEM grid. Finally, we performed high resolution TEM observation and obtained clear image of the carbon nanotubes, which were deposited on the graphene supporting membrane.

• Korean Journal of Materials Research
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• v.15 no.3
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• pp.149-154
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• 2005

Teflon like fluorocarbon thin films have been deposited on silicon and oxide molds as an antistiction layer for the hot embossing process by an inductively coupled plasma (ICP) chemical vapor deposition (CVD) method. The process was performed at $C_4F_8$ gas flow rate of 2 sccm and 30 W of plasma power as a function of substrate temperature. The thickness of film was measured by a spectroscopic ellipsometry. These films were left in a vacuum oven of 100, 200 and $300^{\circ}C$ for a week. The change of film thickness, contact angle and adhesion and friction force was measured before and after the thermal test. No degradation of film was observed when films were treated at $100^{\circ}C$. The heat treatment of films at 200 and $300^{\circ}C$ caused the reduction of contact angles and film thickness in both silicon and oxide samples. Higher adhesion and friction forces of films were also measured on films treated at higher temperatures than $100^{\circ}C$. No differences on film properties were found when films were deposited on either silicon or oxide. A 100 nm silicon template with 1 to $500\;{\mu}m$ patterns was used for the hot embossing process on $4.5\;{\mu}m$ thick PMMA spun coated silicon wafers. The antistiction layer of 10 nm was deposited on the silicon mold. No stiction or damages were found on PMMA surfaces even after 30 times of hot embossing at $200^{\circ}C$ and 10 kN.

• JSTS:Journal of Semiconductor Technology and Science
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• v.3 no.3
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• pp.132-138
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• 2003

We investigated the polarization retention characteristics of ferroelectric capacitors with $Pb(Zr,Ti)O_3$ (PZT) thin films which were fabricated by different deposition methods. In thermally-accelerated retention tests, PZT films which were prepared by a chemical solution deposition (CSD) method showed rapid decay of retained polarization charges as the thickness of the films decreased down to 100 nm, while the films which were grown by metal organic chemical vapor deposition (MOCVD) retained relatively large non-volatile charges at the corresponding thickness. We concluded that in the CSD-grown films, the thicker interfacial passive layer compared with the MOCVD-grown films had an unfavorable effect on retention behavior. We observed the existence of such interfacial layers by extrapolation of the total capacitance with thickness of the films and the capacitance of these layers was larger in MOCVD-grown films than in CSD-grown films. Due to incomplete compensation of surface polarization charges by the free charges in the metal electrodes, the interfacial field activated the space charges inside the interfacial layers and deposited them at the boundary between the ferroelectric layer and the interfacial layer. Such space charges built up an internal field inside the films, which interfered with domain wall motion, so that retention property at last became degraded. We observed less imprint which was a result of less internal field in MOCVD-grown films while large imprint was observed in CSD-grown films.

• Journal of the Korean Vacuum Society
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• v.9 no.4
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• pp.341-345
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• 2000

We investigated the microstructures and the electrical properties of $ZrO_2$thin films deposited by reactive DC magnetron sputtering on (100) Si with different deposition conditions and annealing treatments. The refractive index of the $ZrO_2$ thin films increased with annealing temperatures and deposition powers, and approached to the ideal value of 2.0~2.2. The $ZrO_2$thin films deposited at the room temperature are amorphous, and the films are polycrystalline at the deposition temperature of $300^{\circ}C$. Both the thickness of the interfacial oxide layer and the root-mean-square (RMS) value of surface roughness increased upon annealing in the oxygen ambient. The Cmax value and leakage current value decreased with the increase of thickness of the interfacial oxide thickness.

• Journal of the Korean Vacuum Society
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• v.11 no.3
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• pp.166-170
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• 2002

Artificial $BaTiO_3$(BTO)/$SrTiO_3$(STO) oxide superlattice have been deposited on MgO (100) single crystal substrate by pulsed laser deposition(PLD) method. The stacking periodicity of BTO/STO superlattice structure was varied from $BTO_{1\;unit\; cell}/STO_{1\;unit\; cell}$ to $BTO_{125\;unit\; cell}/STO_{125 \;unit \;cell}$ thickness with the total thickness of 100 nm. The result of X-ray diffraction showed the characteristics of superlattice in the BTO/STO multilayer structure. we have also confirmed that there was no interdiffusion at the interface between BTO and STO layers by high resolution transmission electron microscopy(HRTEM). The dielectric constant of superlattice increased with decreasing stacking periodicity of the BTO/STO superlattice within the critical thickness. The dielectric constant of the BTO/STO superlattice reached a maximum i.e., 1230 at a stacking perioicity of $BTO_{2\;unit\; cell}/STO_{2\;unit\; cell}$ .