• 대한전기학회:학술대회논문집
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• 대한전기학회 2000년도 하계학술대회 논문집 C
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• pp.1763-1765
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• 2000

This paper presents deposition and characterizations of microcrystalline silicon ($\mu$ c-Si:H) films prepared by hot wire chemical vapor deposition at substrate temperature at 300$^{\circ}C$. The flow rates of $SiH_4$ gas are critical parameter for the formation of Si films with microcrystalline phase. We could obtain $\mu$ c-Si:H with columnar grain structure and volume fraction of 75% without H2 dilution. The electronic properties, hydrogen bonding configurations, and $H_2$ concentration inside the films are also strongly affected by $SiH_4$ flow rate, which is provided in this paper.

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2005년도 추계학술대회 논문집
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• pp.593-597
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• 2005

FIB equipment can perform sputtering and chemical vapor deposition simultaneously. It is very advantageously used to fabricate a micro structure part having 3D shape because the minimum beam size of ${\phi}$ 10nm and smaller is available. Currently FIB is not being applied in the fabrication of this micro part because of some problems to redeposition and charging effect of the substrate causing reduction of accuracy with regards to shape and productivity. Furthermore, the prediction of the material removal rate information should be required but it has been insufficient for micro part fabrication. The paper have the targets that are FIB-CVD characteristic analysis and minimum line pattern resolution achievement fur 3D micro fabrication. We make conclusions with the analysis of the results of the experiment according to beam current, pattern size and scanning parameters. CVD of 8 pico ampere shows superior CVD yield but CVD of 1318 pico ampere shows the pattern sputtered. And dwell time is dominant parameter relating to CVD yield.

• 한국산업융합학회 논문집
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• 제25권6_2호
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• pp.1037-1045
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• 2022

In this study, nanoscale Al₂O3 ceramic particles were used due its exceptionally high hardness characteristics, chemical stability, and wear resistance properties. These nanoparticles will be used to investigate the optimal process conditions for the electro co-deposition of the Ni-Al₂O₃ composite coatings. A Watts bath electrolytic solution of a controlled composition along with a fixed agitation speed was used for this study. Whereas the current density, the pH value, temperature and concentration of the nano Al₂O₃ particles of the electrolyte were designated as the manipulative variables. The experimental design method was based on the orthogonal array to find the optimum processing parameters for the electro co-deposition of Ni-Al₂O₃ composite coatings. The result of confirmation experimental based on the optimal processing condition through the analysis of variance ; EDX analysis found that the ratio of alumina increased to 8.65 wt.% and subsequently the overall hardness increased to 983 Hv. Specially, alumina were evenly distributed on Nickel matrix and particles were embedded more firmly and finely in Nickel matrix.

• 한국대기환경학회지
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• 제16권5호
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• pp.539-544
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• 2000

A simple analytic model is proposed here to analyze the concentration deficit field caused by a large area of vegetated area. With non-dimensional deposition velocity chosen as small parameter, the regular perturbation method is exploited to derive the mass balance equation and the dynamic equations for the concentration deficit field, Analytic solutions to those equations are obtained in a closed form for several cases of interest, assuming that the concentration field is stationary and the plume can be nicely approximated as Gaussian for a point source. The results suggest that quite a negligible fraction (less than 1%) of the gaseous air pollutants emitted into the air is removed by the vegetated area of which width is 4 km in wind-wise direction, the typical dimension of the Restricted Development Zones around the metropolitan regions in South Korea.

• 한국세라믹학회지
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• 제53권2호
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• pp.167-170
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• 2016

Various piezoelectric nanostructures have been extensively studied for competitive energy harvesting applications. Here, GaN nanowires grown by a nonconventional magnetic field-assisted chemical vapor deposition process were investigated to characterize the piezoelectric energy harvesting characteristics. As a controlling parameter, only the growth time was changed from 15 min to 90 min to obtain different crystallinity and morphology of the nanowires. Energy harvesting characteristics were found to depend largely on the growth time. A longer growth time tended to lead to an increased output current, which is reasonable when considering the enhanced charge potentials and crystallinity. A maximum output current of ~14.1 nA was obtained for the 90 min-processed nanowires.

• 한국마린엔지니어링학회:학술대회논문집
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• 한국마린엔지니어링학회 2002년도 춘계학술대회논문집
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• pp.95-100
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• 2002

This study was experimentally performed to investigate flow characteristics of spray droplets in the wind tunnel. Behavior of the spray droplets in the pipe was observed and the deposition rate of droplets on the surface of pipe as liquid film was measured. The experiments were carried out for a variety of parameter, such as velocity of feed air, spray angle of nozzle, and diameter of droplet. From the visual observation of the spray droplets in the pipe and the measurement of deposition rate on the pipe, the general understanding of droplets behavior for desuperheater was provided.

• 전자공학회논문지A
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• 제29A권4호
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• pp.33-37
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• 1992

AlGaAs/GaAs quantum well delta-doped channel FET's have been successfully fabricated using by low-pressure metalorganic chemical vapor deposition(LP-MOCVD). The FET's with a gate dimension of 1.8$\mu$m $\times$ 100$\mu$m have a maximum transconductance of 190 mS/mm and a maximum current density of 425 mA/nm. The devices show extremely broad transconductances with a large voltage swing of 2.4V. The S-parameter measurements have indicated that the current gain and power gain cutoff frequencies of the device were 7 and 15 GHz, respectively. These values are among the best performance reported for GaAs based heterojunction FET's with a similar device geometry.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 추계학술대회 논문집 Vol.14 No.1
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• pp.509-512
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• 2001

Aluminum nitride(AlN) thin films were deposited on silicon substrates using RF magnetron sputtering at various deposition conditions and investigated the characteristics. It was used XRD, AES, SEM, and HP-4145B semiconductor parameter analyzer to analysis deposited AlN thin films. The deposition conditions for the good c-axis orientation were 100 W of RF power, $200^{\circ}C$ of substrate temperature and 15 mTorr of working pressure. The leakage current density was less then $1.3{\times}10^{-7}A/cm^{2}$. And it was also investigated the etching properties of deposited AlN thin films for application.

• ETRI Journal
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• 제31권6호
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• pp.703-708
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• 2009

Silicon antimony films are studied as resistors for uncooled microbolometers. We present the fabrication of silicon films and their alloy films using sputtering and plasma-enhanced chemical vapor deposition. The sputtered silicon antimony films show a low 1/f noise level compared to plasma-enhanced chemical vapor deposition (PECVD)-deposited amorphous silicon due to their very fine nanostructure. Material parameter K is controlled using the sputtering conditions to obtain a low 1/f noise. The calculation for specific detectivity assuming similar properties of silicon antimony and PECVD amorphous silicon shows that silicon antimony film demonstrates an outstanding value compared with PECVD Si film.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 추계학술대회 논문집
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• pp.509-512
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• 2001

Aluminum nitride(AIN) thin films were deposited on silicon substrates using RF magnetron sputtering at various deposition conditions and investigated the characteristics. It was used XRD, AES, SEM, and HP-4145B semiconductor parameter analyzer to analysis deposited AIN thin films. The deposition conditions for the good c-axis orientation were 100 W of RF power, 200$^{\circ}C$ of substrate temperature and 15 mTorr of working Pressure. The leakage current density was less then 1.3${\times}$10$\^$-7/ A/$\textrm{cm}^2$. And it was also investigated the etching properties of deposited AIN thin films for application.