Journal of the Korean Institute of Telematics and Electronics A (전자공학회논문지A)
- Volume 29A Issue 4
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- Pages.33-37
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- 1992
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- 1016-135X(pISSN)
Characteristics of AlGaAs/GaAs Quantum-Well Delta-Doped Channel FET's by Low Pressure Metalorganic Chemical Vapor Deposition
저압 유기금속기상 성장법에 의한 AlGaAs/GaAs 양자 우물에 델타 도우핑된 채널 FET 특성
Abstract
AlGaAs/GaAs quantum well delta-doped channel FET's have been successfully fabricated using by low-pressure metalorganic chemical vapor deposition(LP-MOCVD). The FET's with a gate dimension of 1.8
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