• Journal of Sensor Science and Technology
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• v.22 no.3
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• pp.175-180
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• 2013

This paper describes the characteristics of cubic silicon carbide (3C-SiC) films grown on a carbonized Si(100) substrate, using hexamethyldisilane (HMDS, $Si_2(CH_3)_6$) as a safe organosilane single precursor in a nonflammable $H_2$/Ar ($H_2$ in Ar) mixture carrier gas by atmospheric pressure chemical vapor deposition (APCVD) at $1280^{\circ}C$. The growth process was performed under various conditions to determine the optimized growth and carbonization condition. Under the optimized condition, grown film has a single crystalline 3C-SiC with well crystallinity, small voids, low residual stress, low carrier concentration, and low RMS. Therefore, the 3C-SiC film on the carbonized Si (100) substrate is suitable to power device and MEMS fields.

• 한국신재생에너지학회:학술대회논문집
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• 2008.05a
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• pp.487-490
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• 2008

Temperature programmed oxidation (TPO) is used to characterize coke species deposited on commercial nickel catalyst, C11-PR during propane pre-reforming. Propane pre-reforming performed under various condition, S/C from 1.5 to 2.5 and temperature from $350^{\circ}C$ to $450^{\circ}C$. There are three kinds of coke species detected by TPO: (i) reactive coke, (ii) coke deposited on metal site and (iii) coke deposited on acid support. Coke deposited on metal and support are minimized although reactive coke is generated at temperature of $400^{\circ}C$ and S/C of 2.0. Reactive coke is expected to remove easily below temperature of $200^{\circ}C$. Therefore, optimized pre-reforming condition for propane is $400^{\circ}C$ and S/C of 2.0.

• The Transactions of the Korean Institute of Electrical Engineers P
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• v.64 no.4
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• pp.277-280
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• 2015

In this paper, we have studied the surface property and transmittance of n- and p-type thin film deposited on ITO substrate. In n-type samples, the average particle size was large and uniform as RF power was increased, and the best results were shown at the condition of the temperature of $300^{\circ}C$ and 200 W of RF power. The transmittance of the sample deposited for 20 minutes was 74.82% and the light wave was increased to 800 nm. In p-type samples, the results were 71.21% and 789 nm at the deposition condition of the RF power of 250 W and the temperature of $250^{\circ}C$.

• The Korean Journal of Ceramics
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• v.3 no.4
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• pp.257-262
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• 1997

Aluminum nitride(AIN) thin films were deposited on SiO$_2$/Si substrates by reactive sputtering for the application of SAW devices. The major deposition parameters such as pressure, nitrogen fraction, rf power, substrate distance were changed to find out the optimal condition for c-axis oriented thin films on an amorphous substrate. The effects of deposition parameters on the crystal structure, residual stress, and growth morphology of thin films were characterized by XRD, SEM, and TEM. The FWHM of (002) rocking curve of the films deposited at the proper condition was lower than 2.2$^{\circ}$(C=0.93$^{\circ}$). Cross-sectional TEM showed that self-aligned structure was developed just after slightly random growth at the initial stage. The frequency characteristics of test device fabricated from AIN thin films confirmed their piezoelectric property and applicability for SAW devices.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.29-29
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• 2008

Platinum Thin films were deposited on $Al_2O_3$ by Rf magnetic Sputtering. The physical and electrical characteristics of these films were analyzed under various deposition conditions(Ar gas pressure, input power, substrate temperature.) and annealing condition. The deposition rate was increased with increasing the input power but not increased linear. In the other factor, The Pt thin films property was associated with resistance. so lower resistance had more and more good Pt thin films condition. For the purpose of this study, we will get the best Pt thin film characteristics.

• Journal of the Korean institute of surface engineering
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• v.30 no.1
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• pp.63-68
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• 1997

The effects of the post-deposition annealing on the structural optical properties of sputtered $TiO_2$ thin films were studied; annealing was carried out in air up to $1000^{\circ}C$ for different duration. The results of the X-ray diffraction and the raman spectroscopy showed the annealing-condition dependent structural transformation of $TiO_2$ films from the as-deposited amorphous phase to the anatase and rutil phases. The spectroscopic elliposometry was used to investigate the deposition-condition dependence of the as-deposted films optical constants and also the evolution of the optical constants correlated with the annealing-induced structural transformation.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1996.11a
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• pp.75-78
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• 1996

The deposition condition Gf TiN films as electrode was studied by sheet resistance, TiN depositon Thickness X-ray diffraction. TiN was made by reactively DC magnetron sputtering with varying $N_2$/Ar mixture gas and substrate temperature. After finding The deposition condition of TiN films, The samples with the structure of Cu/Ta$_2$O$_{5}$, TiN/Ta$_2$O$_{5}$Si, Cu/TiN/Ta$_2$O$_{5}$ Si were prepared and were measured I-V, C-V. As a results, it was found that when TiN was deposited in an $N_2$a results, it was found that when TiN was deposited in an $N_2$atmosphere its Sheet resistance is lower n than n V$_2$Ar mixtureixture

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.11a
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• pp.248-251
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• 2002

In the electrophoresis for fabrication of a superconducting wire and film, the enough deposition and formal sustain of a film condition affect to superconducting state of samples. In this paper, a superconducting film was fabricated with various suspension solution such as acetone, buthanol, and ethanol. As a results, the best deposition condition with d.c 250 V and a.c 25 V of applied voltage, and 90 sec of applied time for BSCCO superconducting film by electrophoresis was investigated.

• 한국방재학회:학술대회논문집
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• 2008.02a
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• pp.815-818
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• 2008

Titanium was oxidized with oxygen plasma and calcinated with rapid thermal annealing for degradation of humic acid dissolved in water. Titania photocatalytic plate was produced by titanium surface oxidized with oxygen plasma by Plasma Enhanced Chemical Vapor Deposition(PECVD). RF-power and deposition condition is controlled under 100 W, 150 W, 300 W and 500 W. Treatment time was controlled by 5 min and 10 min. The film properties were evaluated by the X-ray Photoelectron Spectroscopy (XPS) and X-Ray Diffraction (XRD). From the experimental results, we found the optimal condition of titania film which exhibited good performance. Moreover photocatalytic capacity was about twice better than thermal spray titania film, and also as good as titania powder.

• Journal of the Korean institute of surface engineering
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• v.32 no.3
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• pp.317-330
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• 1999

The texture of electrodeposits changes from the orientation that places the lowest energy crystal facets parallel to the substrate under a condition of low ion concentration adjacent to the deposit, to the orientation that places the higher energy crystal facets parallel to the substrate as the ion concentration adjacent to the deposit increases. The electrodeposits have peculiar surface morphologies and microstructures depending on their textures, which in turn may affect their mechanical properties even when they are obtained in a similar electrolysis condition. The electrodeposits undergo recrystallization, when annealed. The recrystallization texture may be different from the deposition texture. These phenomena have been discussed.