Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)
- 1996.11a
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- Pages.75-78
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- 1996
The electric properties of TiN made by reactively magnetron sputtering
반응성 마그네트론 스퍼터링으로 제작한 TiN의 전기적 특성
Abstract
The deposition condition Gf TiN films as electrode was studied by sheet resistance, TiN depositon Thickness X-ray diffraction. TiN was made by reactively DC magnetron sputtering with varying
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