• Proceedings of the KIEE Conference
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• 2001.11a
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• pp.103-105
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• 2001

ZnO thin films on glass substrate were deposited by RF sputter with various $Ar/O_2$ gas ratio. Crystallinities, surface morphologies, and electrical properties of the films were investigated by XRD(x-ray diffractometer), and SEM (scanning electron microscopy) analyses. The facing targets sputtering system can deposit thin film at plasma free condition and change the deposition condition in wide range. We suggested that a very suitable $Ar/O_2$ gas of ratio should be 50/50 for preparation of high quality ZnO films with good C-axis orientation.

• 한국신재생에너지학회:학술대회논문집
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• 2008.05a
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• pp.419-421
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• 2008

Sputter deposition on a Pt counter electrode was studied using RF plasma as the improvement of conversion efficiency for dye-sensitized solar cells (DSC). The effects of the sputtering thickness and incident angle on a Pt counter electrode for DSC was scrutinized. We conducted the experiment to get the optimal sputtering time for the performance of the DSC. Under the sputtering time condition of 120 seconds, we varied the incident angles of substrate from $0^{\circ}$ to $60^{\circ}$. Under standard test condition (AM 1.5, 100mW/$cm^2$), we obtained the maximum efficiency of 4.61% at the incident angle of $40^{\circ}$ with an active cell area of $1cm^2$.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.50 no.10
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• pp.532-535
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• 2001

The sputtering condition of Cr thin film was established in order to get Cr gate electrode having a vertical wall structure for Mo-tip FEA. In case of Mo-tip FEA which had a vertically-etched Cr gate electrode, the field enhancement factor, was relatively increased and so the field emission performance in terms of turn-on voltage, emission current and trans-conductance could be improved when compared with the devices having a tapered gate wall.

• 한국전산유체공학회:학술대회논문집
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• 2008.03a
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• pp.221-226
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• 2008

Numerical simulation is performed for microdroplet deposition on a pre-patterned micro-structure. The level-set method for tracking the liquid-gas interface is extended to treat the immersed (or irregular-shaped) solid surface. The no-slip condition at the fluid-solid interface as well as the matching conditions at the liquid-gas interface is accurately imposed by incorporating the ghost fluid approach based on a sharp-interface representation. The method is further extended to treat the contact angle condition at an immersed solid surface. The present computation of a patterning process using microdroplet ejection demonstrates that the multiphase characteristics between the liquid-gas-solid phases can be used to improve the patterning accuracy.

• 한국전산유체공학회:학술대회논문집
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• 2008.10a
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• pp.221-226
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• 2008

Numerical simulation is performed for microdroplet deposition on a pre-patterned micro-structure. The level-set method for tracking the liquid-gas interface is extended to treat the immersed (or irregular-shaped) solid surface. The no-slip condition at the fluid-solid interface as well as the matching conditions at the liquid-gas interface is accurately imposed by incorporating the ghost fluid approach based on a sharp-interface representation. The method is further extended to treat the contact angle condition at an immersed solid surface. The present computation of a patterning process using microdroplet ejection demonstrates that the multiphase characteristics between the liquid-gas-solid phases can be used to improve the patterning accuracy.

• Journal of Industrial Technology
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• v.5
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• pp.73-79
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• 1985

Thermodynamic calculation for the CVD of SiC from methyltrichlorosilane(MTS) was done in some range of deposition condition to identify optimum condition. The results show that the most considerable chemical species are chloride and chlorosilane for silicon source and methane and acetylene for carbon source. In order to yield single phase ${\beta}$-SiC it is believed that optimum temperature range is between 1500 and $1700^{\circ}k$. With increasing temperature, stable phase is changed from Si+SiC phase to C+SiC phase. It is believed because equilibrium concentration of silicon source decrease and equilibrium concentration of carbon source increases with increasing temperature.

• Journal of the Korean Society of Manufacturing Process Engineers
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• v.3 no.4
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• pp.81-87
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• 2004

The titanium has many superior characteristics such as specific strength, heat resistance, corrosion resistance, organism compatibility, non-magnetic and etc. and their quantity are abundant. This study performed turning operation of Ti-6Al-4V alloy using the TiAlN coated tool which was treated with PVD. Experimental works were also executed to measure cutting force, chip figuration and surface roughness for different cutting conditions. As a result of study, tool wear was serious at the condition over 100m/min of cutting speed. The excellent cutting condition of cutting depth was at 1.0mm.

• 한국정보디스플레이학회:학술대회논문집
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• 2007.08a
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• pp.8-11
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• 2007

The new technologies in mobile display developed in SEC are briefly reviewed. For a differentiation, SEC's LTPS line is based on SLS (Sequential Lateral Solidification) technology. In this paper, the characteristics of SEC's SLS in recent and future mobile displays were discussed. The microstructure produced by SLS crystallization is dependent on SLS process conditions such as mask design, laser energy density, and pulse duration time. The microstructure and TFT (Thin Film Transistor) performance are closely related. For an optimization of TFT performance, SLS process condition should be adjusted. Other fabrication processes except crystallization such as blocking layer, gate insulator deposition and cleaning also affect TFT performance. Optimized process condition and tailoring mask design can make it possible to produce high quality AMOLED devices. The TFT non-uniformity caused by laser energy density fluctuation could be successfully diminished by mixing technology.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.14 no.9
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• pp.751-756
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• 2001

Carbon nanotubes(CNTs) was successfully grown on Ni coated silicon wafer substrate by PECVD technique(Plasma Enhanced Chemical Vapor Deposition). As a catalyst, Ni thin film of thickness ranging from 15∼30nm was prepared by electron beam evaporator system. In order to find the find the optimum growth condition, initially two different types of gas mixtures such as C$_2$H$_2$-NH$_3$ and C$_2$H$_2$-NH$_3$-Ar were systematically investigated by adjusting the gas mixing ratio in temperature of 600$^{\circ}C$ under 0.4 torr. The diameter of the grown CNTs was 40∼200nm. The diameter of the CNTs increases with increasing the Ni particles size. TEM images clearly demonstrated synthesized nanotubes to be multiwalled.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.05a
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• pp.692-695
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• 1999

This paper presents annealing characteristics of CrN thin-film strain gauges, which were deposited on glass by DC reactive magnetron sputtering in an argon-nitrogen atmosphere)Ar-(5-~25%)$N_2$. The physical and electrical characteristics of these films investigated with the thickness range 3500$\AA$ of CrN thin films, annealing temperature (100~30$0^{\circ}C$) and annealing time (24-72hr) . The optimized condition of CrN thin-film strain gauges were thickness range of 3500$\AA$ and annealing condition(30$0^{\circ}C$ , 48hr) in Ar-10%$N_2$ deposition atmosphere. Under optimum conditions, the CrN thin-films for strain gauge is obtained a high resistivity, $\rho$=1147.65$\Omega$cm a low temperature coefficient of 11.17. And change in resistance after annealing for the CrN thin film were quitely linear and stable.