Journal of the Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회논문지)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Growth of Carbon Nanotubes Depending on Etching Condition of Ni-catalytic Layer

Ni 박막 촉매 Etching 조건에 따른 탄소나노튜브 성장

  • 정성희 (충북대학교 재료공학과) ;
  • 장건익 (충북대학교 재료공학과) ;
  • 류호진 (한국화학연구원 화학소재연구부)
  • Published : 2001.09.01
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Abstract

Carbon nanotubes(CNTs) was successfully grown on Ni coated silicon wafer substrate by PECVD technique(Plasma Enhanced Chemical Vapor Deposition). As a catalyst, Ni thin film of thickness ranging from 15∼30nm was prepared by electron beam evaporator system. In order to find the find the optimum growth condition, initially two different types of gas mixtures such as C$_2$H$_2$-NH$_3$ and C$_2$H$_2$-NH$_3$-Ar were systematically investigated by adjusting the gas mixing ratio in temperature of 600$^{\circ}C$ under 0.4 torr. The diameter of the grown CNTs was 40∼200nm. The diameter of the CNTs increases with increasing the Ni particles size. TEM images clearly demonstrated synthesized nanotubes to be multiwalled.

Keywords

References

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