• 제목/요약/키워드: deposition condition

검색결과 992건 처리시간 0.026초

화학증착법에 의한 강에의 알루미나 피복에서 구조-성질-과정에 관한 연구 (The Study of Structre-Peoperty-Process in Alumina Coating of Steel by Chemical Vapour Deposition Process)

  • 최진일
    • 한국표면공학회지
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    • 제22권3호
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    • pp.135-144
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    • 1989
  • Aluminium Oxide was deposited with a C.V.D.-technique on various substrates. The effects of various treating condition such as temperature, time, heat resistance and composition of substrates were investigated in order to understand the relationship of structure, property and process. Grain size depends upon the activity of adsorption siite and coarsened with increasing temperature and time. Deposition rate decreases in order of electrolytic iron, carbon steel STS430 and STS304, since the active site for adsorption of reactant was more decreased for Cr and Ni than Fe. Oxidation resistance of alumina coated specimens improved markedely and that of stainless steel was prominent.

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THE EFFECT OF INTERNAL STRESS ON THE SOFT MAGNETIC PROPERTIES OF PERMALLOY THIN FILMS

  • Kim, Hyun-Tae;Kim, Sang-Joo;Han, Suk-Hee;Kim, Hi-Jung;Kang, Il-Koo
    • 한국자기학회지
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    • 제5권5호
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    • pp.533-537
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    • 1995
  • The stress in Permalloy thin films fabricated by rf magnetron sputtering on the Si (100) substrates has been investigated with various deposition parameters such as the film thickness, argon pressure, and rf power. The internal stress changes from compressive to tensile with higher input power and argon pressure. The cause of stress variations with these deposition parameters is discussed in terms of thermal and/or intrinsic stress changes. Low coercive force is obtained from Permalloy thin films at a condition of low compressive stress.

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플라즈마 표면 처리에 따른 AZO 박막의 특성 변화 (Characterization of AZO Thin Film by Plasma Surface Treatment)

  • 우종창;김관하
    • 한국전기전자재료학회논문지
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    • 제32권2호
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    • pp.147-150
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    • 2019
  • There is a need for the development of transparent conductive materials that are economical and environmentally friendly with exhibit low resistivity and high transmittance in the visible spectrum. In this study, the deposition rate and uniformity of Al-doped ZnO-thin films were improved by changing the Z-motion of the sputtering system. The deposition rate and the uniformity were determined to be 3.44 nm/min and 1.23%, respectively, under the 10 mm Z-motion condition. During $O_2$ plasma treatment, the intrusion-type metal elements in the thin film were reduced, which contributed to an oxygen vacancy reduction in addition to structural stabilization. Moreover, the sheet resistance was more easily saturated.

무전해 Co-Cu-P 도금속도에 미치는 도금 조건과 표면상태의 영향 (Effect of Plating Condition and Surface on Electroless Co-Cu-P Alloy Plating Rate)

  • 오이식
    • 동력기계공학회지
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    • 제4권2호
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    • pp.31-39
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    • 2000
  • Relationships between the plating condition and the plating rate of the deposition film for the electroless plating of Co-Cu-P alloy were discussed in this report. The result obtained from this experiment were summarized as follow ; The optimum bath composition was consisted of 0.8 ppm thiourea as a stabilizing agent. Composition of the deposit was found to be uniform after two hours of electroless plating. Plating rates of nickel-catalytic surface and zincate-catalytic surface were found to be very closely equal, but the plating time of nickel-catalytic surface took longer than that of the zincated-catalytic surface.

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진공공간 내 나노급 오염입자의 실시간 진단시스템 개발 (Development of real-time nanoscale contaminant particle characteristics diagnosis system in vacuum condition)

  • 강상우;김태성
    • 진공이야기
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    • 제2권3호
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    • pp.11-15
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    • 2015
  • Particle characteristics diagnosis system (PCDS) was developed to measure submicron particle characteristics by modulation of particle beam mass spectrometry (PBMS) with scanning electron microscopy (SEM) and energy dispersive x-ray spectroscopy (EDS). It is possible to measure the particle size distribution in real-time, and the shape, composition can be measured in sequence keeping vacuum condition. Apparatus was calibrated by measuring the size classified NaCl particle which generated at atmospheric pressure. After the calibration, particles were sampled from the exhaust line of plasma enhanced chemical vapor deposition (PECVD) process and measured. Result confirms that PCDS is capable for analyzing particles in vacuum condition.

Relationships of Body Composition and Fat Partition with Body Condition Score in Serra da Estrela Ewes

  • Caldeira, R.M.;Portugal, A.V.
    • Asian-Australasian Journal of Animal Sciences
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    • 제20권7호
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    • pp.1108-1114
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    • 2007
  • Twenty eight non-lactating and non-pregnant adult Serra da Estrela ewes, ranging in body condition score (BCS) from 1 to 4 were used to study the relationships between BCS, live weight (LW), body composition and fat partition. Ewes were slaughtered and their kidney knob and channel fat (KKCF), sternal fat (STF) and omental plus mesenteric fat (OMF) were separated and weighed. Left sides of carcasses as well as the respective lumbar joints were then dissected into muscle, bone and subcutaneous (SCF) and intermuscular fat (IMF). The relationship between LW and BCS was studied using data from 1,396 observations on 63 ewes from the same flock and it was found to be linear. Regression analysis was also used to describe the relationships among BCS and/or LW and weights (kg) and percentages in empty body weight (EBW) of dissected tissues. The prediction of weights and percentages in EBW of total fat (TF) and of all fat depots afforded by BCS was better than that provided by LW. Only the weight of muscle and the percentage of bone in the EBW were more efficiently predicted by LW than by BCS. IMF represented the largest fat depot with a BCS of 1 and 2, whereas SCF was the most important site of fat deposition with a BCS of 3 and 4. Allometric coefficients for each fat depot in TF suggest that the fat deposition order in ewes from this breed is: IMF, OMF, SCF and KKCF. Results demonstrate that BCS is a better predictor than LW of body reserves in this breed and that LJ is a suitable anatomical region to evaluate BCS.

A Novel Atomic Layer Deposited Al2O3 Film with Diluted NH4OH for High-Efficient c-Si Solar Cell

  • Oh, Sung-Kwen;Shin, Hong-Sik;Jeong, Kwang-Seok;Li, Meng;Lee, Horyeong;Han, Kyumin;Lee, Yongwoo;Lee, Ga-Won;Lee, Hi-Deok
    • JSTS:Journal of Semiconductor Technology and Science
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    • 제14권1호
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    • pp.40-47
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    • 2014
  • In this paper, $Al_2O_3$ film deposited by thermal atomic layer deposition (ALD) with diluted $NH_4OH$ instead of $H_2O$ was suggested for passivation layer and anti-reflection (AR) coating of the p-type crystalline Si (c-Si) solar cell application. It was confirmed that the deposition rate and refractive index of $Al_2O_3$ film was proportional to the $NH_4OH$ concentration. $Al_2O_3$ film deposited with 5 % $NH_4OH$ has the greatest negative fixed oxide charge density ($Q_f$), which can be explained by aluminum vacancies ($V_{Al}$) or oxygen interstitials ($O_i$) under O-rich condition. $Al_2O_3$ film deposited with $NH_4OH$ 5 % condition also shows lower interface trap density ($D_{it}$) distribution than those of other conditions. At $NH_4OH$ 5 % condition, moreover, $Al_2O_3$ film shows the highest excess carrier lifetime (${\tau}_{PCD}$) and the lowest surface recombination velocity ($S_{eff}$), which are linked with its passivation properties. The proposed $Al_2O_3$ film deposited with diluted $NH_4OH$ is very promising for passivation layer and AR coating of the p-type c-Si solar cell.

Investigating the Au-Cu thick layers Electrodeposition Rate with Pulsed Current by Optimization of the Operation Condition

  • Babaei, Hamid;Khosravi, Morteza;Sovizi, Mohamad Reza;Khorramie, Saeid Abedini
    • Journal of Electrochemical Science and Technology
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    • 제11권2호
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    • pp.172-179
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    • 2020
  • The impact of effective parameters on the electrodeposition rate optimization of Au-Cu alloy at high thicknesses on the silver substrate was investigated in the present study. After ensuring the formation of gold alloy deposits with the desired and standard percentage of gold with the cartage of 18K and other standard karats that should be observed in the manufacturing of the gold and jewelry artifacts, comparing the rate of gold-copper deposition by direct and pulsed current was done. The rate of deposition with pulse current was significantly higher than direct current. In this process, the duty cycle parameter was effectively optimized by the "one factor at a time" method to achieve maximum deposition rate. Particular parameters in this work were direct and pulse current densities, bath temperature, concentration of gold and cyanide ions in electrolyte, pH, agitation and wetting agent additive. Scanning electron microscopy (SEM) and surface chemical analysis system (EDS) were used to study the effect of deposition on the cross-sections of the formed layers. The results revealed that the Au-Cu alloy layer formed with concentrations of 6gr·L-1 Au, 55gr·L-1 Cu, 24 gr·L-1 KCN and 1 ml·L-1 Lauryl dimethyl amine oxide (LDAO) in the 0.6 mA·cm-2 average current density and 30% duty cycle, had 0.841 ㎛·min-1 Which was the highest deposition rate. The use of electrodeposition of pure and alloy gold thick layers as a production method can reduce the use of gold metal in the production of hallow gold artifacts, create sophisticated and unique models, and diversify production by maintaining standard karats, hardness, thickness and mechanical strength. This will not only make the process economical, it will also provide significant added value to the gold artifacts. By pulsating of currents and increasing the duty cycle means reducing the pulse off-time, and if the pulse off-time becomes too short, the electric double layer would not have sufficient growth time, and its thickness decreases. These results show the effect of pulsed current on increasing the electrodeposition rate of Au-Cu alloy confirming the previous studies on the effect of pulsed current on increasing the deposition rate of Au-Cu alloy.

단일 첨가제를 이용한 고종횡비 TSV의 코발트 전해증착에 관한 연구 (A Study on the Cobalt Electrodeposition of High Aspect Ratio Through-Silicon-Via (TSV) with Single Additive)

  • 김유정;이진현;박기문;유봉영
    • 한국표면공학회:학술대회논문집
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    • 한국표면공학회 2018년도 춘계학술대회 논문집
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    • pp.140-140
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    • 2018
  • The 3D interconnect technologies have been appeared, as the density of Integrated Circuit (IC) devices increases. Through Silicon Via (TSV) process is an important technology in the 3D interconnect technologies. And the process is used to form a vertically electrical connection through silicon dies. This TSV process has some advantages that short length of interconnection, high interconnection density, low electrical resistance, and low power consumption. Because of these advantages, TSVs could improve the device performance higher. The fabrication process of TSV has several steps such as TSV etching, insulator deposition, seed layer deposition, metallization, planarization, and assembly. Among them, TSV metallization (i.e. TSV filling) was core process in the fabrication process of TSV because TSV metallization determines the performance and reliability of the TSV interconnect. TSVs were commonly filled with metals by using the simple electrochemical deposition method. However, since the aspect ratio of TSVs was become a higher, it was easy to occur voids and copper filling of TSVs became more difficult. Using some additives like an accelerator, suppressor and leveler for the void-free filling of TSVs, deposition rate of bottom could be fast whereas deposition of side walls could be inhibited. The suppressor was adsorbed surface of via easily because of its higher molecular weight than the accelerator. However, for high aspect ratio TSV fillers, the growth of the top of via can be accelerated because the suppressor is replaced by an accelerator. The substitution of the accelerator and the suppressor caused the side wall growth and defect generation. The suppressor was used as Single additive electrodeposition of TSV to overcome the constraints. At the electrochemical deposition of high aspect ratio of TSVs, the suppressor as single additive could effectively suppress the growth of the top surface and the void-free bottom-up filling became possible. Generally, copper was used to fill TSVs since its low resistivity could reduce the RC delay of the interconnection. However, because of the large Coefficients of Thermal Expansion (CTE) mismatch between silicon and copper, stress was induced to the silicon around the TSVs at the annealing process. The Keep Out Zone (KOZ), the stressed area in the silicon, could affect carrier mobility and could cause degradation of the device performance. Cobalt can be used as an alternative material because the CTE of cobalt was lower than that of copper. Therefore, using cobalt could reduce KOZ and improve device performance. In this study, high-aspect ratio TSVs were filled with cobalt using the electrochemical deposition. And the filling performance was enhanced by using the suppressor as single additive. Electrochemical analysis explains the effect of suppressor in the cobalt filling bath and the effect of filling behavior at condition such as current type was investigated.

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동원광산의 금-은 광화작용 (Gold and Silver Mineralization in the Dongweon Mine)

  • 박희인;박영록
    • 자원환경지질
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    • 제23권2호
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    • pp.183-199
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    • 1990
  • Ore deposits of Dongwon mine are composed of numerous gold and silver veins emplaced in sedimentary rocks of Cambrian Choseon Supergroup and granitoids of Cretaceous age. Ore veins of the mine can be divided into gold and silver veins on the base of vein structure, mineral assemblage and vein trends. Mutual relationships between gold and silver veins are uncertain. Gold veins are simple veins which are composed of base-metal sulfides, and electrum with quartz and ankerite. On the other hand, silver veins are complex veins which reveal three distinct stages of mineral deposition based on vein structure; stage I, deposition of small amounts of oxides and pyrite with quartz; stage II, deposition of base-metal sulfides, small amounts of Ag-bearing minerals, calcite and quartz; stage III, deposition of base metal sulfides, electrum, Ag-sulfosalts, native silver, carbonates and quartz. Homogenization temperature and salinity of fluid inclusion from quartz of gold vein are as follows; $229^{\circ}$ to $283^{\circ}C$, 4.7 to 6.4 wt.% equivalent NaCI. The ore mineralogy suggests that temperature(T) and sulfur fugacity($fs_2$) of the formation of the gold vein and stage III of silver vein are estimated as T ; $294^{\circ}$ to $318^{\circ}C$, $fs_2\;10^{-9.4}$ to $10^{-10.1}$ atm. and T; $240^{\circ}$ to $279^{\circ}C$, $fs_2;10^{-11.1}$ to $10^{-17.3}$ atm. respectively. Pressure condition during gold vein formation estimated from data of ore mineralogy and fluid inclusion range 500 to 750 bar.

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